• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1069-1072
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• 2003

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising nanoimprint method for cost-effectively defining nanometer scale structures at room temperature and low pressure. Nanostamp fabrication technology is a key technology for UV-NIL because fabricating a high resolution nanostamp is the first step for defining high resolution nanostructures in a substrate. We used quartz as an UV transparent stamp material for the UVNIL. A $5{\times}5{\times}0.09$ inch stamp was fabricated using the quartz etch process in which Cr film was used as a hard mask for transferring nanostructures into the quartz. In this paper, we describe the quartz etching process and discuss the results including SEM images.

• Journal of Institute of Control, Robotics and Systems
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• v.10 no.7
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• pp.604-610
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• 2004

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. Since the resolution of transferred nanostructures depends strongly upon that of nanostamps, the nanostamp fabrication technology is a key technology to UV-NIL. In this paper, a $5\times5\times0.09$ in. quartz stamp whose critical dimension is 377 nm was fabricated using the etching process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. To effectively apply the fabricated 5-in. stamp to UV-NIL on a 4-in. Si wafer, we have proposed a new UV-NIL process using a multi-dispensing method as a way to supply resist on a wafer. Experiments have shown that the multi-dispensing method can enable UV-NIL using a large-area stamp.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.199-202
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• 2003

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. Since the resolution of nanostructures depends strongly upon that of nanostamps, the nanostamp fabrication technology is a key technology to UV-NIL. In this paper, a 5$\times$5$\times$0.09 in. quartz stamp whose critical dimension is 377 nm was fabricated using the etch process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. To effectively apply tile fabricated 5-in. stamp to UV-NIL on a 4-in. Si wafer, we have proposed a new UV-NIL process using a multi-dispensing method as a way to supply resist on a wafer Experiments have shown that the multi-dispensing method can enable UV-NIL rising a large-area stamp.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.145-146
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• 2006

A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, O2 plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.109-112
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• 2006

A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, $O_2$ plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.167-170
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• 2005

The two-dimensional (2D) and three-dimensional (3D) diamond-like carbon (DLC) stamps for ultraviolet nanoimprint lithography (UV-NIL) were fabricated using two kinds of methods, which were a DLC coating process followed by the focused ion beam (FIB) lithography and the two-photon polymerization (TPP) patterning followed by nano-scale thick DLC coating. We fabricated 70 nm deep lines with a width of 100 nm and 70 nm deep lines with a width of 150 nm on 100 nm thick DLC layers coated on quartz substrates using the FIB lithography. 200 nm wide lines, 3D rings with a diameter of $1.35\;{\mu}m$ and a height of $1.97\;{\mu}m$, and a 3D cone with a bottom diameter of $2.88\;{\mu}m$ and a height of $1.97\;{\mu}m$ were successfully fabricated using the TPP patterning and DLC coating process. The wafers were successfully printed on an UV-NIL using the DLC stamp. We could see the excellent correlation between the dimensions of features of stamp and the corresponding imprinted features.