• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.29-32
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• 2002

This paper describes a novel structure of NMOSFET with elevated SiGe source/drain region and ultra-shallow source/drain extension(SDE)region. A new ultra-shallow junction formation technology. Which is based on damage-free process for rcplacing of low energy ion implantation, is realized using ultra-high vacuum chemical vapor deposition(UHVCVD) and excimer laser annealing(ELA).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.562-565
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• 2001

In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20nm for arsenic dosage(2${\times}$10$\_$14//$\textrm{cm}^2$), exciter laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm and realized sub-50nm n-MOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.05a
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• pp.349-352
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• 2001

In this paper, novel device structure in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA) for ultra pn junction formation. Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20 nm for arsenic dosage (2$\times$10$^{14}$ $\textrm{cm}^2$), excimer laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.87-92
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• 1998

Ultr shallow p$^{+}$-n junction with Co/Ti bilayer silicidde contact was formed by ion implantation of BF$_{2}$ [energy : (30, 50)keV, dose:($5{\times}10^{14}$, $5{\times}10^{15}$/$\textrm{cm}^2$] onto the n-well Si(100) region and by RTA-silicidation and post annealing of the evaporated Co(120.angs., 170.angs.)/Ti(40~50.angs.) double layer. The sheet resistance of the silicided p$^{+}$ region of the p$^{+}$-n junction formed by BF2 implantation with energy of 30keV and dose of $5{\times}10^{15}$/$\textrm{cm}^2$ and Co/Ti thickness of $120{\AA}$/(40~$50{\AA}$) was about $8{\Omega}$/${\box}$. The junction depth including silicide thickness of about $500{\AA}$ was 0.14${\mu}$. The fabricated p$^{+}$ -n ultra shallow junction depth including silicide thickness of about $500{\AA}$ was 0.14${\mu}$. The fabricated p$^{+}$-n ultra shallow junction with Co/Ti bilayer silicide contact did not show any agglomeration or variation of sheet resistance value after post annealing at $850^{\circ}C$ for 30 minutes. The boron concentration at the epitaxial CoSi$_{2}$/Si interface of the fabricated junction was about 6*10$6{\times}10^{19}$ / $\textrm{cm}^2$./TEX>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.111-111
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• 2007

Further scaling the semiconductor devices down to low dozens of nanometer needs the extremely shallow depth in junction and the intentional counter-doping in the silicon gate. Conventional ion beam ion implantation has some disadvantages and limitations for the future applications. In order to solve them, therefore, plasma source ion implantation technique has been considered as a promising new method for the high throughputs at low energy and the fabrication of the ultra-shallow junctions. In this paper, we study about the effects of DC bias and base pressure as a process parameter. The diluted mixture gas (5% $PH_3/H_2$) was used as a precursor source and chamber is used for vacuum pressure conditions. After ion doping into the Si wafer(100), the samples were annealed via rapid thermal annealing, of which annealed temperature ranges above the $950^{\circ}C$. The junction depth, calculated at dose level of $1{\times}10^{18}/cm^3$, was measured by secondary ion mass spectroscopy(SIMS) and sheet resistance by contact and non-contact mode. Surface morphology of samples was analyzed by scanning electron microscopy. As a result, we could accomplish the process conditions better than in advance.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.398-403
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• 2003

Shallow $p^{＋}$ n junction was formed using a ULE(ultra low energy) implanter. Deactivation phenomena were investigated for the shallow source/drain junction based on measurements of post-annealing time and temperature following the rapid thermal annealing(RTA) treatments. We found that deactivation kinetics has two regimes such that the amount of deactivation increases exponentially with annealing temperature up to $850^{\circ}C$ and that it decreases linearly with the annealing temperature beyond that temperature. We believe that the first regime is kinetically limited while the second one is thermodynamically limited. We also observed "transient enhanced deactivation", an anomalous increase in sheet resistance during the early stage of annealing at temperatures higher than X$/^{\circ}C$. Activation energy for transient enhanced deactivation was measured to be 1.75-1.87 eV range, while that for normal deactivation was found to be between 3.49-3.69 eV.

• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.81-81
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• 1997

• Korean Journal of Materials Research
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• v.8 no.5
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• pp.470-473
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• 1998

$As^+$ was ion-implanted onto $CoSi_{2}$ thin films formed by rapidly thermal-annealed Co/Ti bilayers. Then the specimens were drive-in annealed at 500~100$0^{\circ}C$ to form ultra-shallow $n^+$p junction diodes and to measure their 1- V characteristics. When drive-in annealed at 50$0^{\circ}C$ for 280 sec., 50 nm thick ultra-shallow junctions were formed and di¬odes showed the best 1- V characteristics with low leakage current. In particular. the leakage current was 2 orders lower than that of diodes formed by using Co monolayer. It was attributed to uniform $CoSi_{2}$/Si interfaces.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.326-336
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• 1997

From the concept that the ion implantation-induced defect is one of the major factors in determining source/drain junction characteristics, high quality ultra-shallow $p^+$-n junctions were formed through the control of ion implantation-induced defects in silicon substrate. In conventional process of the junction formation. $p^+$ source/drain junctions have been formed by $^{49}BF_2^+$ ion implantation followed by the deposition of TEOS(Tetra-Ethyl-Ortho-Silicate) and BPSG(Boro-Phospho-Silicate-Glass) films and subsequent furnace annealing for BPSG reflow. Instead of the conventional process, we proposed a series of new processes for shallow junction formation, which includes the additional low temperature RTA prior to furnace annealing, $^{49}BF_2^+/^{11}B^+$ mixed ion implantation, and the screen oxide removal after ion implantation and subsequent deposition of MTO (Medium Temperature CVD oxide) as an interlayer dielectric. These processes were suggested to enhance the removal of ion implantation-induced defects, resulting in forming high quality shallow junctions.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.585-588
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• 1998

We investigated the ultra-low energy B, P, and As ion implantation using ungraded MDRANGE code to form nanometer junction depths. Even at the ultra-low energies that were simulated in paper, it was found that channeling cases must be carefully considered. In the cases of B, channeling occurred above 500 eV, in the cases of P, channeling occurred above 1 keV, and in the cases of As, channeling occurred above 2 keV. Comparing 2D dopant profiles of 1 keV B, 2 keV P, and 5 keV As with tilts, we demonstrated that most channeling cases occurred not lateral directions but depth directions. Through thus results, even below 5 keV energy ion implant considered here, it is estimated that channeling effects are important in the formation of nanometer junction depths.