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http://dx.doi.org/10.3740/MRSK.2003.13.6.398

Deactivation Kinetics in Heavily Boron Doped Silicon Using Ultra Low Energy Ion Implantation  

Yoo, Seung-Han (Department of Materials Science and Engineering, Hongik University)
Ro, Jae-Sang (Department of Materials Science and Engineering, Hongik University)
Publication Information
Korean Journal of Materials Research / v.13, no.6, 2003 , pp. 398-403 More about this Journal
Abstract
Shallow $p^{＋}$ n junction was formed using a ULE(ultra low energy) implanter. Deactivation phenomena were investigated for the shallow source/drain junction based on measurements of post-annealing time and temperature following the rapid thermal annealing(RTA) treatments. We found that deactivation kinetics has two regimes such that the amount of deactivation increases exponentially with annealing temperature up to $850^{\circ}C$ and that it decreases linearly with the annealing temperature beyond that temperature. We believe that the first regime is kinetically limited while the second one is thermodynamically limited. We also observed "transient enhanced deactivation", an anomalous increase in sheet resistance during the early stage of annealing at temperatures higher than X$/^{\circ}C$. Activation energy for transient enhanced deactivation was measured to be 1.75-1.87 eV range, while that for normal deactivation was found to be between 3.49-3.69 eV.
Keywords
deactivation; activation; source/drain; ultra-shallow junction; sheet resistance;
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