• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.178-178
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• 2010

With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.207-210
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• 2005

In order to investigate the influence of the homo buffer layer on the microstructure of the ZnO thin film, undoped ZnO buffer layer were deposited on sapphire (0001) substrates by ultra high vaccum pulsed laser deposition (UHV-PLD) and molecular beam eiptaxy (MBE). After high temperature annealing at $600^{\circ}C$ for 30min, undoped ZnO buffer layer was deposited with various oxygen pressure (35~350mtorr). On the grown layer of undoped ZnO, Arsenic-doped(l, 3wt%) ZnO layers were deposited by UHV-PLD. The optical property of the ZnO was analyzed by the photoluminescence (PL) measurement. From $\Theta-2\Theta$ XRD analysis, all the films showed strong (0002) diffraction peak, and this indicates that the grains grew uniformly with the c-axis perpendicular to the substrate surface. Field emission scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO were varied with oxygen pressure, arsenic doping level, and the deposition method of undoped ZnO buffer layers. The films became denser and smoother in the cases of introducing MBE-buffer layer and lower oxygen pressure during As-doped ZnO deposition. Higher As-doping concentration enhanced the columnar-character of the films.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.59 no.1
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• pp.35-43
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• 2023

Sensory evaluation of shucking pressure, pressure holding time, seeding method, difference in full shucking rate in the aquaculture area and shucking oyster was performed using an ultra-high pressure oyster shucking machine. The reaching time for each target pressure is 2.2-2.4 MPa/sec in the range of 180 MPa to 240 MPa. had a rate of pressure rise. There was a difference of 0.5-1.7℃ in the range of 24-27℃ in the seawater temperature before and after the pressure treatment inside the pressure vessel, but there was no specific increase or decrease in seawater temperature. When only the shucking pressure is increased without the pressure holding time, the critical shucking pressure at which the oyster shell is opened and the flesh is peeled in the range of 200 to 220 MPa. When the critical shucking pressure is reached, the oyster sample in the closed vessel is expected to be shucked by about 40%. If there is no pressure holding time when judged only by full shucking, an increase in pressure of about 1.5 MPa is required to further shuck 3% of the oyster population. The oyster samples cultivated in the south coast of Korea were subject to full shucking under the conditions of 220 MPa shucking pressure and two minutes (120 seconds) of pressure holding time, and the difference in the pressure of the oysters according to the oyster seeding method and the farming area was minute. Finally, the condition of 220 MPa of shucking pressure and three minutes of pressure holding time was the best at 1.52 when the result of the sensory evaluation performed manually was set to 1.0. Next was 1.4 under the conditions of 220 MPa of shucking pressure and one minute of pressure holding time (60 seconds), and 1.3 under the condition of 220 MPa and two minutes of pressure holding time (120 seconds). Therefore, it is considered that the most desirable shucking conditions, considering the efficiency and sensory evaluation results, are the conditions of 220 MPa shucking pressure and two to three minutes of pressure holding time.

• Journal of Bio-Environment Control
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• v.18 no.2
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• pp.148-152
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• 2009

Numerous studies have presented evidence that global atmospheric carbon dioxide ($CO_{2}$ ) concentration and temperature is increasing every year. Both of the $CO_{2}$ and temperature are important components for photosynthesis activity of plants and thusgrowth and yield. However, little information is available in terms of the reaction of vegetable plants to increased $CO_{2}$ concentration and temperature, and also the reaction to a complex condition of both increased $CO_{2}$ concentration and temperature. The aim of this research was therefore to investigate changes in growth, photosynthetic activity and ultra-cellular structure of leaf tissue of Chinese cabbage. Plants were grown under either of elevated $CO_{2}$ concentration (elevated $CO_{2}$, 2-fold higher than atmospheric $CO_{2}$ ) or elevated temperature (elevated temp, 4$^{\circ}C$ higher than atmospheric temperature), under both of elevated $CO_{2}$ concentration and elevated temperature (elevated temp+$CO_{2}$), and under atmospheric $CO_{2}$ concentration and temperature (control). The treatment of 'elevated temp' negatively affected leaf area, fresh weight, chlorophyll and starch content. However, when the treatment of 'elevated temp' was applied coincidently with the treatment of 'elevated $CO_{2}$', growth and photosynthetic performance of plants were as good as those in the treatment of 'elevated $CO_{2}$', Microscopic study resulted that the highest starch content and density of cells were observed in the leaf tissue grown at the treatment of 'elevated $CO_{2}$', whereas the lowest ones were observed in the leaf tissue grown at the treatment of 'elevated temp'. These results suggest that when Chinese cabbage grows under a high-temperature condition, supplement of $CO_{2}$ would improve the growth and yield. In our knowledge, it is the first time to determine the effect of a complex relationship between the increased $CO_{2}$ concentration and temperature on the growth of Chinese cabbage.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.139-141
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• 2005

It is possble to study charge transfer property which is caused by height variation because we can see the organic materials barrier height and STM tip by organic materials energy band gap. Here, we investigated the negative differential resistance(NDR) and charge transfer property of self-assembled 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto pre-treatment($H_{2}SO_{4}:H_{2}O_{2}$=3:1) Si. The Au substrate was exposed to a 1 mM/l solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a $0.1{\mu}M/1$ solution of 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_{2}Cl_{2}$, and finally blown dry with $N_2$. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -1.50 V to -1.20 V with 298 K temperature. The vacuum condition is $6{\times}10^{-8}$ Torr. As a result, we found that NDR and charge transfer property by a little change of height when the voltage is applied between STM tip and electrode.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.16-19
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• 2006

The characteristic of negative differential resistance(NDR) is decreased current when the applied voltage is increased. The NDR is potentially very useful in molecular electronics device schemes. Here, we investigated the NDR characteristic of self-assembled 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto $pre-treatment(H_2SO_4:H_2O_2=3:1)$ Si. The Au substrate was exposed to a 1 mM/1 solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a 0.1 ${\mu}M/l$ solution of 4.4'-di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2,$ and finally blown dry with N_2. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -2 V to +2 V with 298 K temperature. The vacuum condition was $6{\time}10^{-8}$ Torr. As a result, we found the NDR voltage of the 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate were $-1.61{\pm}0.26$ V(negative region) and $1.84{\pm}0.33$ V(positive region). respectively.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1844-1846
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• 2005

The characteristic of negative differential resistance(NDR) is decreased current when the applied voltage is increased. The NDR is potentially very useful in molecular electronics device schemes. Here, we investigated the NDR property of self-assembled 4,4- Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto pre-treatment$(H_2SO_4:H_2O_2=3:1)$ Si. The Au substrate was exposed to a 1mM/l solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a $0.1{\mu}M/l$ solution of 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2$, and finally blown dry with $N_2$. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -2V to +2V with 299K temperature. The vacuum condition is $6{\times}10^{-8}$ Torr. As a result, we found the NDR voltage of the nitro-benzene is $-1.61{\pm}0.26$ V(negative region) and $1.84{\pm}0.33$ (positive region), respectively.

• 한국유가공학회:학술대회논문집
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• 2002.11a
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• pp.23-40
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• 2002

This study was conducted to investigate the quality changes of the UHT(ultra-high temperature), LTLT(law temperature long time) and HTST(high temperature short time) treated milk samples by storage conditions for 6 months from August 2000 to February 2001. The UHT treated milk samples collected from 3 plants(A, B and C) were stored at l0$^{\circ}$C and room temperature(dark and light exposure) for 6 months, and the LTLT and HTST treated milk samples(D and E) were also stored for 30 days. The UHT pasteurized milk of A, B and C plant was treated at 130$^{\circ}$C for 2-3s, 133$^{\circ}$C for 2-3s and 135$^{\circ}$C for 4s, respectively. The UHT sterilized milk of A and B plant was treated at 140$^{\circ}$C for 2-3s and 145$^{\circ}$C for 3-4s, respectively. The LTLT milk of D plant was treated at 63$^{\circ}$C for 30 mins, and the HTST milk of E plant was treated at 72$^{\circ}$C for 15s. All of the raw milk samples collected from storage tank in 5 milk plants were showed less than 4.0 X 10$^5$cfu/ml in standard plate count, and normal level in acidity, specific gravity, and component of milk. Preservatives, antibiotics, sulfonamides and available chloride were not detected in both raw and heat treated milk samples obtained from 5 plants. One(10%) of 10 UHT pasteurized milk samples obtained from B plant and 2 (20%) of 10 from C were not detected in bacterial count after storage at 37$^{\circ}$C for 14 days, but all of the 10 milk samples from A were detected. No coliforms were detected in all samples tested. No bacteria were also detected in carton, polyethylene and tetra packs collected from the milk plants. A total of 300 UHT pasteurized milk samples collected from 3 plants were stored at room(3$^{\circ}$C ${\sim}$ 30$^{\circ}$C) for 3 and 6 months, 11.3%(34/300) were kept normal in sensory test, and 10.7%(32/300)were negative in bacterial count. The UHT pasteurized milk from A deteriorated faster than the UHT pasteurized milk from B and C. The bacterial counts in the UHT pasteurized milk samples stored at 10$^{\circ}$C were kept less than standard limit(2 ${\times}$ 10$^4$ cfu/ml) of bacteria for 5 days, and bacterial counts in some milk samples were a slightly increased more than the standard limit as time elapsed for 6 months. When the milk samples were stored at room(3$^{\circ}$C ${\sim}$ 30$^{\circ}$C), the bacterial counts in most of the milk samples from A plant were more than the standard limit after 3 days of storage, but in the 20%${\sim}$30%(4${\sim}$6/20) of the milk samples from B and C were less than the standard limit after 6 months of storage. The bacterial counts in the LTLT and HTST pasteurized milk samples were about 4.0 ${\times}$ 10$^3$ and 1.5 ${\times}$ 101CFU/ml at the production day, respectively. The bacterial counts in the samples were rapidly increased to more than 10$^7$ CFU/ml at room temperature(12$^{\circ}$C ${\sim}$ 30$^{\circ}$C) for 3 days, but were kept less than 2 ${\times}$ 10$^3$ CFU/ml at refrigerator(l0$^{\circ}$C) for 7 days of storage. The sensory quality and acidity of pasteurized milk were gradually changed in proportion to bacterial counts during storage at room temperature and 10$^{\circ}$C for 30 days or 6 months. The standard limit of bacteria in whole market milk was more sensitive than those of sensory and chemical test as standards to determine the unaccepted milk. No significant correlation was found in keeping quality of the milk samples between dark and light exposure at room for 30 days or 6 months. The compositions of fat, solids not fat, protein and lactose in milk samples were not significantly changed according to the storage conditions and time for 30 days or 6 months. The UHT sterilized milk samples(A plant ; 20 samples, B plant ; 110 samples) collected from 2 plants were not changed sensory, chemical and microbiological quality by storage conditions for 6 months, but only one sample from B was detected the bacteria after 60 days of storage. The shelflife of UHT pasteurized milk in this study was a little longer than that reported by previous surveys. Although the shelflife of UHT pasteurized milk made a significant difference among three milk plants, the results indicated that some UHT pasteurized milk in polyethylene coated carton pack could be stored at room temperature for 6 months. The LTLT and HTST pasteurized milk should be sanitarily handled, kept and transported under refrigerated condition(below 7$^{\circ}$C) in order to supply wholesome milk to consumers.

• Journal of Korean Tunnelling and Underground Space Association
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• v.24 no.6
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• pp.451-464
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• 2022

The high-level nuclear waste repository is a deep geological disposal system exposed to complex environmental conditions such as high temperature, radiation, and ground-water due to handling spent nuclear fuel. Continuous exposure can lead to cracking and deterioration of the structure over time. On the other hand, the high-level nuclear waste repository requires an ultra-long life expectancy. Thus long-term structural health monitoring is essential. Various sensors such as an accelerometer, earth pressure gauge, and displacement meter can be used to monitor the health of a structure, and a piezoelectric sensor is generally used. Therefore, it is necessary to develop a highly durable sensor based on the durability assessment of the piezoelectric sensor. This study designed an accelerated life test for durability assessment and life prediction of the piezoelectric sensor. Based on the literature review, the number of accelerated stress levels for a single stress factor, and the number of samples for each level were selected. The failure mode and mechanism of the piezoelectric sensor that can occur in the environmental conditions of the high-level waste repository were analyzed. In addition, two methods were proposed to investigate the maximum harsh condition for the temperature stress factor. The reliable operating limit of the piezoelectric sensor was derived, and a reasonable accelerated stress level was set for the accelerated life test. The suggested methods contain economical and practical ideas and can be widely used in designing accelerated life tests of piezoelectric sensors.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.39 no.9
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• pp.727-734
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• 2015

Recently, because of the increased oil prices globally, there have been studies investigating the improvement of fuel-conversion efficiency in internal combustion engines. The improvements realized in thermal efficiency using lean combustion are essential because they enable us to realize higher thermal efficiency in gasoline engines because lean combustion leads to an increase in the heat-capacity ratio and a reduction of the combustion temperature. Gasoline direct injection (GDI) engines enable lean combustion by injecting fuel directly into the cylinder and controlling the combustion parameters precisely. However, the extension of the flammability limit and the stabilization of lean combustion are required for the commercialization of GDI engines. The reduction characteristics of three-way catalysts (TWC) for lean combustion engines are somewhat limited owing to the high excess air ratio and low exhaust gas temperature. Therefore, in the present study, we assess the reaction of exhaust gases and their production in terms of the development of efficient TWCs for lean-burn GDI engines at 2000 rpm / BMEP 2 bar operating conditions, which are frequently used when evaluating the fuel consumption in passenger vehicles. At the lean-combustion operating point, $NO_2$ was produced during combustion and the ratio of $NO_2$ increased, while that of $N_2O$ decreased as the excess air ratio increased.