• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.20 no.4
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• pp.395-400
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• 2011

Scanning Probe Lithography is a method to localized oxidation on single crystal silicon wafer surface. This study demonstrates nanometer scale non contact lithography process on (100) silicon (p-type) wafer surface using AFM(Atomic force microscope) apparatuses and pulse controlling methods. AFM-based experimental apparatuses are connected the DC pulse generator that supplies ultra short pulses between conductive tip and single crystal silicon wafer surface maintaining constant humidity during processes. Then ultra short pulse durations are controlled according to various experimental conditions. Non contact lithography of using ultra short pulse induces electrochemical reaction between micro-scale tip and silicon wafer surface. Various growths of oxides can be created by ultra short pulse non contact lithography modification according to various pulse durations and applied constant humidity environment.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.324-326
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• 2004

We have obtained ultra-short pulses with a wavelength of 616 nm from a Distributed Feedback Dye Laser pumped by excimer laser. Using the second harmonic generation, we obtained ultra-short pulse at 308nm in ultraviolet region and also performed amplification in 3 stages of XeCl amplifiers.

• Journal of Communications and Networks
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• v.5 no.4
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• pp.344-353
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• 2003

Ultra-wideband (UWB) technology is gaining increasing interest for its potential application to short-range indoor wireless communications. Utilizing ultra-short pulses, UWB baseband transmissions enable rich multipath diversity, and can be demodulated with low complexity receivers. Compliance with the FCC spectral mask, and interference avoidance to, and from, co-existing narrow-band services, calls for judicious design of UWB pulse shapers. This paper introduces pulse shaper designs for UWB radios, which optimally utilize the bandwidth and power allowed by the FCC spectral mask. The resulting baseband UWB systems can be either single-band, or, multi-band. More important, the novel pulse shapers can support dynamic avoidance of narrow-band interference, as well as efficient implementation of fast frequency hopping, without invoking analog carriers.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1052-1058
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• 2003

The possibility of micro/nano machining through electro-chemical process is discussed in this research. Electro-chemical dissolution region is localized within 1 ${\mu}m$ by applying ultra short pulses with tens of nanosecond duration. The effects of voltage, pulse duration, and pulse frequency on the localization distance are investigated. Localization distance can be manipulated by controlling the voltage and pulse duration, and various hole shapes are produced including stepped holes and taper free hole. High quality micro-hole with 8 ${\mu}m$ diameter with 20 ${\mu}m$ depth and micro-groove with 9 ${\mu}m$ width with 10 ${\mu}m$ depth are machined on 304 stainless steel.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.335-338
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• 2004

We present the theoritical and numerical analysis of ultra short pulse Cr4+:Forsterite laser for the biomedical. We use a Cr4+:Forsterite that has a diameter of 3mm, a crystal length of 5mm and a chromium concentration of 0.04%. As a result of this experiment, We can know that lasing at pump power of 600mW, and saturated at pump power of 5W around.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.10
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• pp.1427-1435
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• 2002

The main aim of the present article is numerically to investigate the micro-scale heat transfer phenomena in a silicon microstructure irradiated by picosecond-to-femtosecond ultra-short laser pulses. Carrier-lattice non-equilibrium phenomena are simulated with a self-consistent numerical model based on Boltzmann transport theory to obtain the spatial and temporal evolutions of the lattice temperature, the carrier number density and its temperature. Especially, an equilibration time, after which carrier and lattice are in equilibrium, is newly introduced to quantify the time duration of non-equilibrium state. Significant increase in carrier temperature is observed for a few picosecond pulse laser, while the lattice temperature rise is relatively small with decreasing laser pulse width. It is also found that the laser fluence significantly affects the N 3 decaying rate of Auger recombination, the carrier temperature exhibits two peaks as a function of time due to Auger heating as well as direct laser heating of the carriers, and finally both laser fluence and pulse width play an important role in controlling the duration time of non-equilibrium between carrier and lattice.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.10
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• pp.85-92
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• 1997

For a InGaAsP buried - heterostructrue $1.3\mu\textrm{m}$ LD with fabry-perot cavity structure, the procedures of ultra-short optical pulse genration ar eanalyzed by simulating the rate equations. Investigting the effects of injected current pulse parameters such as bias $J_b$, pulse width $T_d$ and pulse amplitude $J_p$ on the generated optical pulses, we derive the optimum conditions to obtain a single optical pulse with strong peak value. We also observe that the repetition rate of current pulses needs to be restricted under a certain threshold to generate a train of single optical pulses, and that the period doubling phenomenon takes place by increasing the repitition rate.

• Laser Solutions
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• v.8 no.2
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• pp.7-12
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• 2005

The material processing of UV nanosecond pulse laser cannot be avoided the material shape change and contamination caused by interaction of base material and laser beam. Nowadays, ultra short pulse laser shorter than nanosecond pulse duration is used to overcome this problem. The advantages of this laser are no heat transfer, no splashing material, no left material to the adjacent material. Because of these characteristics, it is so suitable for micro material processing. The processing of sapphire wafer was done by UV 355nm, green 532nm, IR 1064nm. X-Y motorized stage is installed to investigate the proper laser beam irradiation speed and cycles. Also, laser beam fluence and peak power are calculated.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1199-1202
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• 2003

In this research, microfabrication technique using localized electrochemical deposition is presented. Electric field is localized near the tip end region by applying ultra short pulses. Platinum tip is used as the counter electrode and copper is deposited on the copper substrate in 0.5 M CuSO$_4$ and 0.5 M H$_2$SO$_4$ electrolyte. The deposition characteristics such as size, shape, and structural density according to pulse duration and applied voltage are investigated. Micro-columns less than 10 $\mu\textrm{m}$ in diameter are fabricated using the presented technique. The process can be potentially used for three dimensional metal structure fabrications with micrometer feature size.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.5 s.170
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• pp.37-44
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• 2005

In this paper, wire electrochemical machining (Wire ECM) with ultra short pulses is presented. Platinum wire with $10{\mu}m$ diameter was used as a tool and 304 stainless steel was locally dissolved by electrochemical machining in 0.1M $H_{2}SO_4$ electrolyte. Wire ECM can be easily applied to the fabrication of arbitrarily shaped micro-grooves without tool wear. The change of machining gap according to applied pulse voltage, pulse on-time and pulse period was investigated and the optimal pulse condition for stable machining was obtained. Using this method, various micro-grooves with less than $20{\mu}m$ width were fabricated.