• Journal of the Korean Vacuum Society
• /
• v.15 no.5
• /
• pp.458-464
• /
• 2006

The construction and the performance test of an ultra high vacuum (UHV) molecular beam epitaxy (MBE) system has been completed successfully. We have done domestic development and tried performance test for ultra high vacuum molecular beam epitaxy system. This system has reached pressure $2X10-^{10}$ Torr and the substrate has reached temperature $1,100^{\circ}C$. We have investigated into the characteristic of ZnSe/GaAs(001) by using scanning electron microscope (SEM), atomic force microscope (AFM), x-ray diffraction (XRD) and photolumi-nescence (PL).

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.17 no.2
• /
• pp.52-56
• /
• 2007

We have installed an ultra high vacuum (UHV) molecular beam epitaxy (MBE) system and investigated into the characteristics of MBE-grown ZnSe/GaAs [001] using scanning electron microscopy (SEM), atomic force microscopy (AFM), we confirmed that layer's surface was dense and uniform of molecular layer. We used x-ray diffractometer (XRD) and confirmed two peaks correspond to GaAs [001] substrate and ZnSe epilayer, respectively. We observed photoluminescence (PL) peak approximately at 437 nm and measured PL mapping of 2 inch ZnSe epilayer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.108-111
• /
• 2003

Currently, molecular devices are reported utilizing active self-assembled monolayers containing the nitro group as the active component, which has active redox centers[1]. We confirm the electrical properties of 4,4-di(ethynylphenyl)-2'-nitro-1-benzenethiolate. To deposit the SAM layer onto gold electrode, we transfer the prefabricated Au(111) substrates into a 1mM self-assembly molecules in THF solution. Au(111) substrates were prepared by ion beam sputtering method of gold onto the silicon wafer. As a result, we measured current-voltage curve using ultra high vacuum scanning tunneling microscopy (UHV STM), I-V curve also clearly shows several current peaks between the negative bias region (-0.3958V) and the positive bias region (0.4658V), respectively.

• Journal of the Korean Vacuum Society
• /
• v.2 no.2
• /
• pp.255-260
• /
• 1993

UHV-LCVD system was constructed for high quality silicon nitride thin film fabrication. This system consisted of a reaction chamber, an introduction chamber with sample load lock entry, a carbinet for gas manipulation controlling gas flow, a $CO_2$ laser and a Fourier transform mass spectrometer. Although the UHV-LCVD system construction was more sophisticated than low pressure CVD, highly pure thin films were fabricated by controlling gas mixing ratio and flow rate in ultra high vacuum surroundings.

• Applied Science and Convergence Technology
• /
• v.23 no.6
• /
• pp.340-344
• /
• 2014

Ion pumps continue to be a staple in ultra-high vacuum (UHV) applications. Since their adoption as a primary UHV pump in the 1960's, it has been known that a variety of particles can emanate from within the ion pump and cause undesirable effects on current measurements and optics components. Historically the solution has been baffling and shielding which results in longer conductance paths to the ion pump. Those solutions can work, but require a larger pump and more vacuum plumbing to compensate for conductance losses. The first step was to fully understand the nature of the particles and their charges. Once those were characterized options for emissions reduction were evaluated. It was determined that an efficient design of shielding near the source of the particle generation site was the most cost effective solution. With a slight modification to the chamber of a small ion pump, internal shielding was developed that reduced the emissions by a factor of up to 1000 times.

• Journal of the Korean Vacuum Society
• /
• v.3 no.4
• /
• pp.401-404
• /
• 1994

초고 진공영역에서 배기특성 개선을 위하여 재질 및 구조가 다른 세가지 형태의 60(l/s) 형이온 펌프를 제작하여 그 배기특성을 측정하였다. 그 결과 음극판에 Ta 선을 전기용접한 펌프와 양극 cell의 구조에 변화를 준 펌프의 배기속도가 상용으로 이용되고 있는 펌프에 비해 약 50% 이상 개선되었다.

• Journal of the Korean Vacuum Society
• /
• v.3 no.4
• /
• pp.377-381
• /
• 1994

초고진공(UHV) Scanning Tummeling Microscopy(STM)을 제작하였다. 8인치 프란지에 부착한 STM은 초고진공에서 시료의 통전가열이 가능하며 다른 표면 측정방법의 적용과시료처리가 용이하다. 외부로부터 초고진공을 깨지 않고 시료와 tip의 도입이 가능하며 tip을 가열할 수 있다. 완성된 장치로 Si(111)-7$\times$7 구조의 STM상을 얻었다.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
• /
• 2004.04a
• /
• pp.530-537
• /
• 2004

Development of a versatile nanomanipulation tool is an overarching theme in nanotechnology. Such a tool will likely revolutionize the field given that it will enable fabrication and operation of a wealth of interesting nanodevices. This study seeks funding to create a novel nanomanipulation system with the ultimate goal of using this system for nanomanufacturing at the molecular level. The proposed design differs from existing approaches. It is based on a nanoscale ion trap integrated to a scanning prove microscope (SPM) tip. In this design, molecules to be assembled will be ionized and collected in the nanoscale ion trap all in an ultra high vacuum (UHV) environment. Once filled with the molecular ions, the nanoscale ion trap-SPM tip will be moved on a substrate surface using scanning probe microscopy techniques. The molecular ions will be placed at their precise locations on the surface. By virtue of the SPM, the devices that are being nanomanufactured will be imaged in real time as the molecular assembly process is carried out. In the later stages, automation of arrays of these nanomanipulators will be developed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.255-256
• /
• 2006

The electrical properties of viologen ($VC_8SH$) were studied in terms of the tunneling current characteristics using self-assembling techniques and ultra high vacuum scanning tunneling microscopy (UHV-STM). We fabricated the Au substrate were deposited by thermal evaporation system($420^{\circ}C$). Self-assembled monolayers (SAMs) were prepared on Au(111), which had been thermally deposited onto freshly cleaved, heated mica. The Au substrate was exposed to a 1 mM/L solution of Octanethiol in ethanol for 24 h to form a monolayer. After through rinsing the sample, it was exposed to a 0.1 mM/L solution of $VC_8SH$ in ethanol for 30 min. We measurement of the morphology on the single viologen molecule. The current-voltage (I-V) properties were measured at arbitary configured points on the surface of the sample by using a STS.

• Vacuum Magazine
• /
• v.1 no.3
• /
• pp.14-20
• /
• 2014

Lithography is widely recognized as one of the key steps in the manufacture of ICs and other devices and/or structures. However, as the dimensions of features made using lithography become smaller, lithography is becoming a more critical factor for enabling miniature IC or other devices and/or structures to be manufactured. As explained above, to make it happen, many other important technologies will have to be addressed. The vacuum technology is one of them and the engineers and experts are paying attention on vacuum technology including vacuum pumps. Especially high Vacuum(HV) and Ultra high vacuum(UHV) are not easy and not simple one. So the manpower who can understand vacuum technology with long experience in vacuum industry is important with basic study.