Browse > Article

Property of molecular beam epitaxy-grown ZnSe/GaAs  

Kim, Eun-Do (R & D Center ALPHA PLUS Co., Ltd.)
Son, Young-Ho (R & D Center ALPHA PLUS Co., Ltd.)
Cho, Seong-Jin (Department of Physics, Kyungsung University)
Hwang, Do-Weon (R & D Center ALPHA PLUS Co., Ltd.)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.17, no.2, 2007 , pp. 52-56 More about this Journal
Abstract
We have installed an ultra high vacuum (UHV) molecular beam epitaxy (MBE) system and investigated into the characteristics of MBE-grown ZnSe/GaAs [001] using scanning electron microscopy (SEM), atomic force microscopy (AFM), we confirmed that layer's surface was dense and uniform of molecular layer. We used x-ray diffractometer (XRD) and confirmed two peaks correspond to GaAs [001] substrate and ZnSe epilayer, respectively. We observed photoluminescence (PL) peak approximately at 437 nm and measured PL mapping of 2 inch ZnSe epilayer.
Keywords
Ultra high vacuum (UHV); Molecular beam epitaxy (MBE); Effusion cell; plasma cell; ZnSe;
Citations & Related Records
연도 인용수 순위
  • Reference
1 T. Yamaguchi, K. Ando, K. Koizumi, H. Inozue, H. Ishikura, T. Abe and H. Kasada, 'Self-compensation of the phosphorous acceptor in ZnSe', J. Appl. Phys. 37 (1998) 1453   DOI
2 K.J. Hong and S.N. Baek, 'Properties of photoluminecience for ZnSe/GaAs epilayer grown by hot wall epitaxy', J. K. Cryst. Growth and Cryst. Tech. 13 (2003) 105
3 S. Fujiwara, H. Morishita, T. Kotani, K. Matsumoto and T. Shirakawa, 'Growth of large ZnSe single crystal by CVT method', J. Cryst. Growth 186 (1998) 60   DOI   ScienceOn
4 M.J. Kim, H.S. Lee, J.Y. Lee, T.W Kim, K.H. Yoo and M.D. Kim, 'Effect of thermal annealing on the surface, optical, and structural properties of p-type ZnSe thin films grown on GaAs (100) substrates', J. Mat. Sci. 39 (2004) 323   DOI   ScienceOn
5 S.M. Chung, J.W. Lee and C.Y Park, 'Introductory Vacuum Science & Technology' (Cheong Moon Gak, Seoul, 2001) pp. 412-420
6 S.H. Bae, S.R. In, K.H. Chung, Y.B. Lee and Y.H. Shin, 'Vacuum science' (Hankyung, Seoul, 2000) p. 681-695
7 J.S. Song, J.H. Chang, S.K. Hong, M.W. Cho, H. Makino, T. Hanada and T. Yao, 'Improvement in crystallinity of ZnSe by inserting a low-temperature buffer layer between the ZnSe epilayer and the GaAs substrate', J.Cryst. Growth 242 (2002) 95   DOI