• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.2
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• pp.34-39
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• 2007

UWB(Ultra Wide Band) system for high speed and high accurate location has been studying actively. This paper presents the design and implementation of RF transceiver for DS-CDMA(Direct Sequence-Code Division Multiple Access) UWB device. Major components of RF transceiver such as Low Noise Amplifier(LNA) and Band Pass Filter(BPF) are designed and then fabricated to meet wideband characteristics. The RF transceiver was implemented by the use of the fabricated components and commercial devices after carrying out performance simulation. Through the performance evaluation of the UWB RF transceiver with W-CDMA signal, the approach of design, implementation and evaluation of RF transceiver which is available to DS-CDMA UWB system is verified.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.1
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• pp.117-122
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• 2006

A CMOS LNA based on a single-stage cascode configuration is designed for MB-OFDM ultra-wide band(UWB) systems. Wideband($3.1GHz\~4.9GHz$) input matching is performed using a simple bandpass filter to minimize the chip size and the noise figure degradation. The simulation results using $0.18{\mu}m$ CMOS process parameters show a power gain of 9.7dB, a 3dB band width of $2.1GHz\~7.1GHz$, a minimum NF of 2dB, an IIP3 of -2dBm. better than -11.8dB of input matching while occupying only $0.74mm^2$ of chip area. It consumes 25.8mW from a 1.8V supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.7
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• pp.657-663
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• 2009

A fully integrated single ended IR-UWB receiver is implemented using 0.18 ${\mu}m$ CMOS technology. The UWB receiver adopts the non-coherent architecture, which simplifies the RF architecture and reduces power consumption. The receiver consists of single-ended 2-stage LNAs, S2D, envelope detector, VGA, and comparator. The measured results show that sensitivity is -80.8 dBm at 1 Mbps and BER of $10^{-3}$. The receiver uses no external balun and the chip size is only $1.8{\times}0.9$ mm. The consumed current is very low with 13 mA at 1.8 V supply and the energy per bit performance is 23.4 nJ/bit.

• Journal of electromagnetic engineering and science
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• v.11 no.1
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• pp.27-33
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• 2011

In this paper, we propose a high gain, current reused ultra wideband (UWB) low noise amplifier (LNA) that uses TSMC 0.18 ${\mu}m$ CMOS technology. To satisfy the wide input matching and high voltage gain requirements with low power consumption, a resistive current reused technique is utilized in the first stage. A ${\pi}$-type LC network is adopted in the second stage to achieve sufficient gain over the entire frequency band. The proposed UWB LNA has a voltage gain of 12.9~18.1 dB and a noise figure (NF) of 4.05~6.21 dB over the frequency band of interest (1~10 GHz). The total power consumption of the proposed UWB LNA is 10.1 mW from a 1.4 V supply voltage, and the chip area is $0.95{\times}0.9$ mm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.4 s.119
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• pp.408-415
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• 2007

A switched-gain controlled LNA is designed and implemented in 0.18 um CMOS technology for $3.1{\sim}4.8\;GHz$ UWB system. In high gain mode, measurement shows a power gain of 12.5 dB, an input IP3 of 0 dBm, while consuming only 8.13 mA of current. In low gain mode, measurement shows a power gain of -8.7 dB, an input IP3 of 9.1 dBm, while consuming only 0 mA of current.

• ETRI Journal
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• v.29 no.5
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• pp.670-672
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• 2007

An ultra-wideband low-noise amplifier is proposed with operation up to 8.2 GHz. The amplifier is fabricated with a 0.18-${\mu}m$ CMOS process and adopts a two-stage cascode architecture and a simplified Chebyshev filter for high gain, wide band, input-impedance matching, and low noise. The gain of 19.2 dB and minimum noise figure of 3.3 dB are measured over 3.4 to 8.2 GHz while consuming 17.3 mW of power. The Proposed UWB LNA achieves a measured power-gain bandwidth product of 399.4 GHz.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.545-546
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• 2008

This paper presents a low power CMOS low noise amplifier for UWB applications. To reduce the power consumption, two cascode amplifiers was stacked in DC. Designed with $0.18-{\mu}m$ CMOS technology, the proposed LNA achieves 20dB flat gain, below 3dB noise figure, and the power consumption of 5.2mW from a 1.8 V supply voltage.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.1
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• pp.76-80
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• 2011

This paper has proposed a 3~5 GHz low-power and wideband LNA(Low Noise Amplifier), which has been implemented in a 0.18-${\mu}m$ CMOS technology. The proposed LNA has basically the noise-cancelling topology to achieve a balun-function, wideband input matching, and relative low noise figure. In addition, it has utilized a 2nd-order LC-band-pass filter(BPF) as its output load to achieve higher power gain and lower noise figure with the lowest dc power consumption among previously reported works. The proposed amplifier consumes only 3.94 mA from a 1.8 V supply voltage. The simulation results show a power gain of more than +17 dB, a noise figure of less than +4 dB, and an input IP3 of -15.5 dBm.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1860-1862
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• 2004

It is widely known that the ultra high frequency (UHF) method that detects the electromagnetic wave of the PD pulses in the gas insulated space is one of the most competitive methods for its high sensitivity. From the above point of view, this paper describes the characteristics of GIS PD signals measured with ultra wide band (UWB) GIS PD detecting system in which PD signals are detected into the dual UHF band. The UWB PD detection system consists of the UWB UHF coupler, the UWB low noise amplifier (LNA) and the oscilloscope. The dual bands for PD signals are 0.5-2GHz(full band) and 1-2GHz(high band). As results, it was found that the partial discharges of each defect have their own characteristic pattern and the ratio of High band to Full band increases with gas pressure.

• Proceedings of the KIEE Conference
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• 2004.11d
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• pp.63-66
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• 2004

It is widely known that the ultra high frequency (UHF) method that detects the electromagnetic wave of the PD pulses in the gas insulated space is one of the most competitive methods for its high sensitivity. From the above point of view, this paper describes the characteristics of GIS PD signals measured with ultra wide band (UWB) GIS PD defecting system in which PD signals are defected into the dual UHF band. Thc UWB PD detection system consists of the UWB UHF coupler, the UWB low noise amplifier (LNA) and the oscilloscope. The dual bands for PD signals are 0.5-2GHz(full band) and 1-2GHz(high band). As results, it was found that the partial discharges of each defect have their own characteristic pattern and the ratio of High hand to Full band increases with gas pressure.