• Title/Summary/Keyword: UV-Laser

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Growth methanism of ZnO nanowire syntheized by carbo-thermal reduction method (열적 탄소 환원법으로 제조된 ZnO 나노와이어의 성장 메커니즘)

  • 손광석;김현정;박병호;김동규;조형균;김인수
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.173-173
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    • 2003
  • Nanowire와 nanorod 같은 1차원의 반도체 재료는 디멘젼과 크기와 물리적 특성과의 관계 등을 연구하는데 중요한 역할을 하며 laser ablation, arc discharge, chemical vapor depostion, vapor phase transport Process와 solution등의 방법으로 성공적으로 합성되었다. ZnO 는 3.37eV의 넓은 밴드갭과 다른 넓은 밴드갭 재료에 비해 높은 exciton bindng energy (60meV)를 가지며 UV LED, laser diode에 적용하기 유리하고 최근 디스플레나 나노 광전소자로서의 가능성 이 대두되면서 최근 이에 관한 연구가 증가하고 있다. 본 연구에서는 열적탄소환원법(carbothermal reduction process)으로 ZnO와 graphite 분말을 1:1 중량비로 혼합한 분말을 90$0^{\circ}C$, 100$0^{\circ}C$에서 air 분위기에서 20분간 반응 후 로 내에서 냉각 하였다. 직경 이 50nm-1000nm, 길이가 수 미크론인 내부 결함이 전혀 없는 육각형 단결정의 nanowire가 합성되었고 XRD, FE-SEM과 TEM으로 조성 및 형상, 내부구조를 분석하였다. 합성된 ZnO nanowire는 직경 이 변하는 부분에서 성장방향으로의 계단을 형성하였고 이는 layer by layer 방법으로 nanowire가 성장한다는 것을 나타낸다.

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Optical sensing techniques for simultaneous detection of nanoparticles and microorganisms in water (수질내 초미립자와 미생물의 동시 검출을 위한 광학센서기술)

  • Sohn, Ok-Jae;Hyung, Gi-Woo;Kim, Byung-Seb;Rhee, Jong-Il
    • Journal of Sensor Science and Technology
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    • v.17 no.3
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    • pp.157-161
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    • 2008
  • An optical sensor was developed to detect nanoparticles, turbid materials and microorganisms in water simultaneously. Three different light sources like UV-LED, NIR-LED and laser diode have been employed to develop the optical sensor based on the scattering light and fluorescence light. The sensor system has high selectivity and sensitivity, that it can be used to monitor the quality of drinking water.

Thermo-Recording for The Composite System of (Disk-Like Molecules and Liquid Crystals)

  • Jeong, Hwan-Kyeong
    • Journal of the Korean Applied Science and Technology
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    • v.19 no.3
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    • pp.245-249
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    • 2002
  • A (disk-like liquid crystal (DLC) monomer/liquid crystals(LCs)/chiral dopant/dichroic dye) composite was irradiated with ultraviolet (UV) light. The (DLC network/LCs/chiral dopant/dichroic dye) was formed in the homeotropically oriented smectic A(SA) phase by the surface orientation treatment and the electric field. A focal-conic texture exhibiting strong light scattering appeared in the heat-induced chiral nematic phase(N${\ast}$) of the composite upon heating. Thermo-recording in the composite system has been realized by using a He-Ne laser. The laser irradiation was induced the phase transitions from SA phase to chiral nematic(N${\ast}$) phase in the composite system.

Forward Raman amplification for the narrow band Stokes line by double-pass fiber Raman scheme in multi-mode fiber

  • Hwang, In-Duk;Lee, Choo-Hie
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.02a
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    • pp.238-239
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    • 2000
  • The optical fibers are an interesting medium for effective tunable optical frequency conversion in the spectral range of UV, Visible, and near-IR through the nonlinear processes. A number of papers for developing the wideband and flat-gain amplifier for the WDM system applications through the combination of EDFA or thulium-doped fluoride fiber amplifier and Raman amplifier, are reported$^{(1)}$ . Even though a variety of papers related to Raman amplifications are published, the amplification with the feedback of the residual pump is not investigated yet. Accordingly, in this paper, we report the characteristics of forward Raman amplification by the simple and double-pass fiber Raman configuration through the feedback of residual pump beam. (omitted)

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Characteristics Investigation of ZnO-Si-ZnO Multi-layer Thin Films Fabricated by Pulsed Laser Deposition (펄스 레이저 증착법에 의해 제작된 ZnO-Si-ZnO 다층 박막의 특성 연구)

  • 강홍성;강정석;심은섭;방성식;이상렬
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.1
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    • pp.65-69
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    • 2003
  • ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300$^{\circ}C$ in oxygen ambient pressure. Peak positions of ultraviolet (UV) and visible region were changed by addition of Si layer. Mobility of the films was improved slightly than ZnO thin film without Si layer. The structural property changed by inserting intermediate Si layer in ZnO thin film. The optical properties and structural properties of ZnO-Si-ZnO multi-layer thin films were characterized by PL(Photoluminescence) and XRB(X-ray diffraction) method, respectively. Electrical properties were measured by van der Pauw Hall measurements

Thin Film Transistor with Transparent ZnO as active channel layer (투명 ZnO를 활성 채널층으로 하는 박막 트랜지스터)

  • Shin Paik-Kyun
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.1
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    • pp.26-29
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    • 2006
  • Transparent ZnO thin films were prepared by KrF pulsed laser deposition (PLD) technique and applied to a bottom-gate type thin film transistor device as an active channel layer. A high conductive crystalline Si substrate was used as an metal-like bottom gate and SiN insulating layer was then deposited by LPCVD(low pressure chemical vapour deposition). An aluminum layer was then vacuum evaporated and patterned to form a source/drain metal contact. Oxygen partial pressure and substrate temperature were varied during the ZnO PLD deposition process and their influence on the thin film properties were investigated by X-ray diffraction(XRD) and Hall-van der Pauw method. Optical transparency of the ZnO thin film was analyzed by UV-visible phometer. The resulting ZnO-TFT devices showed an on-off ration of $10^6$ and field effect mobility of 2.4-6.1 $cm^2/V{\cdot}s$.

Depletion Kinetics of the Ground State CrO Generated from the Reaction of Unsaturated Cr(CO)x with O2 and N2O

  • Son, H.S.;Ku, J.K.
    • Bulletin of the Korean Chemical Society
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    • v.23 no.2
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    • pp.184-188
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    • 2002
  • Unsaturated $Cr(CO)_x(1{\leq}x{\leq}5)$molecules were generated in the gas phase from photolysis of $Cr(CO)_6$vapor in He using an unfocussed weak UV laser pulse and their reactions with $O_2$ and $N_2O$ have been studied. The formation and disappearance of the ground state CrO molecules were identified by monitoring laser-induced fluorescence(LIF) intensities vs delay time between the photolysis and probe pulses. The photolysis laser power dependence as well as the delay time dependence of LIF intensities from the CrO orange system showed different behavior as those from ground state Cr atoms, suggesting that the ground state CrO molecules were generated from the reaction between $O_2/N_2O$ and photo-fragments of $Cr(CO)_6$ by one photon absorption. The depletion rate constants for the ground state CrO by $O_2$ and $N_2O$ are $5.4{\pm}0.2{\times}10^{-11}$ and $6.5{\pm}0.4{\times}10^{-12}cm^3molecule^{-1}s^{-1}$, respectively.

CO Two-photon Laser Induced Fluorescence Measurements in High Temperature and Pressure Conditions (고온고압 조건에서 Two-Photon LIF를 이용한 CO 측정에 관한 연구)

  • Oh, Seung-Mook;Kim, Duk-Sang;Miles, Paul C.;Colban, Will F.
    • Journal of the Korean Society of Combustion
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    • v.12 no.4
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    • pp.1-7
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    • 2007
  • Carbon monoxide (CO) is not only an important intermediate species in chemical reaction mechanisms of hydrocarbon fuel combustion, but also a crucial pollutant species emitted from automotive engines. To better understand the physical processes impacting CO emissions, the development of laser-based measurement techniques that can visualize in-cylinder CO distributions is desirable. Among these techniques, Laser-Induced Fluorescence (LIF) is a sensitive and species-selective detection technique capable of good spatial resolution. However, some technical matters such as deep UV excitation, severe pressure dependency of the LIF signal, and potential interference from other species have been major challenges for CO LIF application. This study is focused on investigating the feasibility of CO two-photon LIF in a direct-injection diesel engine operating at typical pressure and temperature conditions with commercial grade diesel fuel. Spectroscopic analysis shows that the CO fluorescence signal can be separated from $C_2$ Swan band or broadband fluorescence from PAHs when the signal is collected near 483 nm. The signal-to-noise ratio of CO LIF deteriorate rapidly as pressure is increased, following $P^{-1.49}$ which matches the theoretical signal pressure dependency.

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Preparation and Properties of $Zn_{1-x}Mg_xO$ Thin Films Prepared by Pulsed Laser Deposition Method (펄스 레이저 증착법을 이용한 $Zn_{1-x}Mg_xO$ 박막의 제작과 특성연구)

  • Suh, Kwang-Jong
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.1 s.34
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    • pp.73-76
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    • 2005
  • To widen the band gap of ZnO, we have investigated $Zn_{1-x}Mg_xO(ZMO)$ thin films prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$. From X-ray diffraction patterns, ZMO films show only the (0002) and (0004) diffraction peaks. It means that the flints have the wurtzite structure. Segregation of ZnO and MgO phases is found in the films with x=0.59. All the samples are highly transparent in the visible region and have a sharp absorption edge in the UV region. The shift of absorption edge to higher energy is observed in the films with higher Mg composition. The excitonic nature of the films is clearly appeared in the spectra for all alloy compositions. The optical band-gap ($E_g$) of ZMO films is obtained from the ${\alpha}^2$ vs Photon energy plot assuming ${\alpha}^2\;\propto$ (hv - $E_g$), where u is the absorption coefficient and hv is the photon energy. The value of $E_g$ increases up to 3.72 eV for the films with x=0.35. It is important to adjust Mg composition control for controlling the band-gap of ZMO films.

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ZnO films grown on GaN/sapphire substrates by pulsed laser deposition

  • Suh, Joo-Young;Song, Hoo-Young;Shin, Myoung-Jun;Park, Young-Jin;Kim, Eun-Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.207-207
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    • 2010
  • Both ZnO and GaN have excellent physical properties in optoelectronic devices such as blue light emitting diode (LED), blue laser diode (LD), and ultra-violet (UV) detector. The ZnO/GaN heterostructure, which has a potential to achieve the cost efficient LED technology, has been fabricated by using radio frequency (RF) sputtering, pyrolysis, metal organic chemical vapor deposition (MOCVD), direct current (DC) arc plasmatron, and pulsed laser deposition (PLD) methods. Among them, the PLD system has a benefit to control the composition ratio of the grown film from the mixture target. A 500-nm-thick ZnO film was grown by PLD technique on c-plane GaN/sapphire substrates. The post annealing process was executed at some varied temperature between from $300^{\circ}C$ to $900^{\circ}C$. The morphology and crystal structural properties obtained by using atomic force microscope (AFM) and x-ray diffraction (XRD) showed that the crystal quality of ZnO thin films can be improved as increasing the annealing temperature. We will discuss the post-treatment effect on film quality (uniformity and reliability) of ZnO/GaN heterostructures.

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