• Title/Summary/Keyword: UV etching

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Excimer laser induced ablation of PMMA and PET (엑시머 레이저를 이용한 PMMA와 PET의 가공)

  • Shin, Dong-Sik;Lee, Je-Hoon;Seo, Jung;Kim, Do-Hoon
    • Laser Solutions
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    • v.6 no.1
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    • pp.33-40
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    • 2003
  • The ablative decomposition mechanism of PMMA(polymethyl methacrylate) and PET(polyethylene terephthalate) with KrF excimer laser(λ : 248nm, pulse duration: 5㎱) is investigated. The UV/Vis spectrometer analysis showed that PMMA is a weak absorber and PET is a strong absorber at the wavelength of 248nm. The results(surface debris, melt, etch depth, etching shape) from drilling and direct writing experiments imply that ablation mechanism of PMMA is dominated by photothermal process, while that of PET is dominated by photochemical process.

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A Study on the Fabrication Method of Micro-Mold using 2.2inch LGP by the SCS Micro-Lens Pattern (SCS Micro-lens 패턴 적용 휴대폰 도광판 제작용 미세금형 제작에 대한 연구)

  • Oh, J.G.;Kim, J.S.;Yoon, K.H.;Hwang, C.J.
    • Transactions of Materials Processing
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    • v.20 no.1
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    • pp.60-63
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    • 2011
  • BLU(back light unit) is one of kernel parts of LCD(liquid crystal display) unit. New 3-D micro-lens pattern for LGP(light guide plate), one of the most important parts of LCD-BLU, had been researched. Instead of dot pattern made by chemical etching or laser ablation, SCS(slanted curved surface) micro-lens pattern was designed with optical CAE simulation. This study introduce the method of design using optical CAE simulation for SCS micro-lens, the new fabrication method of micro-mold with SCS micro-lens pattern.

Fabrication via Ultrasonication and Study of Silicon Nanoparticles

  • Kim, Jin Soo;Sohn, Honglae
    • Journal of Integrative Natural Science
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    • v.8 no.3
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    • pp.147-152
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    • 2015
  • Photoluminescent porous silicon (PSi) were prepared by an electrochemical etch of n-type silicon under the illumination with a 300 W tungsten filament bulb for the duration of etch. The red photoluminescence emitting at 620 nm with an excitation wavelength of 450 nm is due to the quantum confinement of silicon nanocrystal in porous silicon. As-prepared PSi was sonicated, fractured, and centrifuged in toluene to obtain photoluminescence silicon quantum dots. BET and BHJ methods were employed to study the specific surface area of as-prepared PSi. Optical characterization of red photoluminescent silicon nanocrystal was investigated by UV-vis and fluorescence spectrometer. Also SEM and TEM images of porous silicon and nanoparticles were investigated.

Development of Optical Head Unit for Nano Optical Probe Array (나노 광 프로브 어레이 구현을 위한 광학 헤드 유닛 개발)

  • Kim H.;Lim J.;Kim S.;Han J.;Kang S.
    • Transactions of Materials Processing
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    • v.15 no.1 s.82
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    • pp.21-26
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    • 2006
  • A optical head unit for nano optical probe array was developed. The optical probe array is generated by Talbot effect. The shape and thickness of microlens array(MLA) were designed to minimize the spot size at the foci of MLA. To increase the optical efficiency of the system and obtain the large tolerance for fabrication, aperture size was theoretically optimized. Then microlens illuminated aperture array(MLIAA) as an optical head unit was fabricated using a ultra violet(UV) molding process on aluminum aperture array. In this process, Al aperture array was fabricated separately using the photolithography and reactive ion etching(RIE) process. Optical properties of the generated optical probes were measured and compared at Talbot distance from the aperture array having a diameter of $1{\mu}m$ and MLIAA.

Fabrication of a wavelength division multiplexer based on the polymeric arrayed-waveguide grating (폴리머 광도파로열을 이용한 파장 분할 다중화기의 제작)

  • 오태원;이원영;신상영
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.11
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    • pp.70-75
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    • 1997
  • a wavelength division multiplexer based on a polymeric arrayed-waveguide grating has been designed and fabricated. A 4-channel multiplexer with a spacing of 3.2 nm is designe dby using te 2-dimensional beam propagation method. A UV-curable epoxy, NOA73, is used for the core layer, and a passive polymer, PMMA, for the cladding layer. The polymer waveguides are fabricated by the reactive ion etching method and their optical properties are characterized. The fabricted device has a center wavelength of 1548.3 nm, and the wavelength spacing between the channels is 3.2nm. The measured crosstalk is better than -18dB.

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A study of excimer laser ablation of polymer (폴리머의 엑시머레이저 어블레이션에 관한 연구)

  • Shin, Dong-Sik;Lee, Je-Hoon;Seo, Jung;Kim, Do-Hoon
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.1857-1860
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    • 2003
  • The ablative decomposition mechanism of PMMA(polymethyt methacrylate), PET(polyethylene terephthalate) and PC(polycarbonate) with KrF excimer laser(λ: 248nm, pulse duration: 5ns) is investigated. The UV/Vis spectrometer analysis showed that PMMA is a weak absorber and PET, PC are a strong absorber at the wavelength of 248nm. The results(surface debris, melt, etch depth, etching shape) from drilling and direct writing experiments imply that ablation mechanism of PMMA is dominated by photothermal process, while that of PET, PC are dominated by photochemical process.

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UV-LASER INDUCED SURFACE REACTION - DESORppTION AND ETCHING

  • Murata, Yoshitada
    • Proceedings of the Korean Vacuum Society Conference
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    • 1992.02a
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    • pp.3-10
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    • 1992
  • pphotostimulated desorpption of NO chemisorbed on ppt(001) at 80K has been studied by the (1+1)-resonance-enhanced multipphoton ionization((1+1)-REMppI) technique. A linearly ppolarized ArF excimer laser ( =193 nm, 6.41eV) is used as the ppumpp laser. A high adsorpption rate selectivity was found in the expposure deppendence of the NO desorpption yield. The NO desorpption yield increases drastically when the amount of NO expposure exceeds ~1.8 L. This result shows that the amount of NO sppecies with a large cross section for pphotostimulated desorpption increases drastically at higher NO coverages. Using scanning tunneling microscoppy, we have observed structural modifications of the chlorinated Si(111)-7$\times$7 surface induced by 266nm laser irradiation. At very low laser fluence of 0.7mJ/$\textrm{cm}^2$, at which thermal desorpption can be ignored, a pperiodic stripped ppattern of a single domain is imaged. This ppattern consists of flat terraces and narrow grooves of ~60 and ~10A in width, resppectively.

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Waveguides Fabrication for Optical Integrated Devices Application on Relaxor-ferroelectric $Pb(Mg_{1/3}Nb_{2/3})O_{3}-PbTiO_3$Single Crystal (완화형 강유전체$Pb(Mg_{1/3}Nb_{2/3})O_{3}-PbTiO_3$ 단결정의 광 집적소자 응용을 위한 도파로 제작)

  • Yang, Woo-Seok;Lee, Sang-Goo;Koo, Kyoung-Hwan;Huh, Hyun;Yoon, Dae-Ho;Lee, Han-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.546-547
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    • 2002
  • Ni thin film on the PMN-PT crystal wafer were deposited by using E-beam evaporator technique. Deposited film was patterned by UV-lithography and etching and was in-diffused at 300~600C. Diffusion profile of Ni ions in PMN-PT was measured by secondary ion mass spectroscopy (SIMS).

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Study of clean laser decapsulation process (친환경 레이저 디캡슐레이션에 관한 연구)

  • Hong, Yun-Seok;Mun, Seong-Uk;Nam, Gi-Jung;Choe, Ji-Hun;Yun, Myeon-Geun
    • Proceedings of the Korean Society of Laser Processing Conference
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    • 2006.11a
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    • pp.103-107
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    • 2006
  • Decapsulation of EMC(Epoxy Molding Compound) in package device is a method used to inspect inside of device by removing plastic molding. So far, chemical etching and mechanical grinding methods have been used widely. Recently, several works using laser have been carried out. This method has advantages with fast process time and precision than conventional methods because of noncontact process. Also, laser process is a clean process because of removing EMC directly without using toxic chemicals. The wavelength of laser used in this study is 355nm. Key parameters of removing EMC are laser power, scan speed, and number of scans of laser. It if confirmed that laser decapsulation is a useful process to inspect inside a device with a small thermal damage to chip surface.

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Design and fabrication of mirror for optical pick-up head (광기록장치의 pick-up 헤드용 미러의 설계 및 제작)

  • Chon, Joong-Hyun;Kim, Yong-Kweon
    • Proceedings of the KIEE Conference
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    • 1999.07g
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    • pp.3292-3294
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    • 1999
  • In this paper, electrostatic scanner mirror for optical pick-up head is designed and fabricated. The mirror size is $20{\mu}m{\times}2400{\mu}m{\times}2400{\mu}m$ and torsional beam size is $10{\mu}m{\times}20{\mu}m{\times}500{\mu}m$. Static deflection angle is calculated ${\pm}0.4$ degrees when the maximum driving voltage is 20 V. Silicon mirror was fabricated using KOH etching and deep RIE. For passivation of the patterned mirror from KOH solution, parylene thin film was used and its usefulness has been verified. Driving electrode was fabricated using UV LIGA process. Mirror and electrode were bonded.

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