• Journal of Sensor Science and Technology
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• v.28 no.3
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• pp.152-156
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• 2019

An ultraviolet (UV) image sensor is an extremely important optoelectronic device used in scientific and medical applications because it can detect images that cannot be obtained using visible or infrared image sensors. Because photodetectors and transistors are based on different materials, conventional UV imaging devices, which have a hybrid-type structure, require additional complex processes such as a backside etching of a GaN epi-wafer and a wafer-to-wafer bonding for the fabrication of the image sensors. In this study, we developed a monolithic GaN UV passive pixel sensor (PPS) by integrating a GaN-based Schottky-barrier type transistor and a GaN UV photodetector on a wafer. Both individual devices show good electrical and photoresponse characteristics, and the fabricated UV PPS was successfully operated under UV irradiation conditions with a high on/off extinction ratio of as high as $10^3$. This integration technique of a single pixel sensor will be a breakthrough for the development of GaN-based optoelectronic integrated circuits.

• The Bulletin of The Korean Astronomical Society
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• v.46 no.1
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• pp.41.1-41.1
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• 2021

We generate solar magnetograms and EUV images from Galileo sunspot drawings using a deep learning model based on conditional generative adversarial networks. We train the model using pairs of sunspot drawing from Mount Wilson Observatory (MWO) and their corresponding magnetogram (or UV/EUV images) from 2011 to 2015 except for every June and December by the SDO (Solar Dynamic Observatory) satellite. We evaluate the model by comparing pairs of actual magnetogram (or UV/EUV images) and the corresponding AI-generated one in June and December. Our results show that bipolar structures of the AI-generated magnetograms are consistent with those of the original ones and their unsigned magnetic fluxes (or intensities) are well consistent with those of the original ones. Applying this model to the Galileo sunspot drawings in 1612, we generate HMI-like magnetograms and AIA-like EUV images of the sunspots. We hope that the EUV intensities can be used for estimating solar EUV irradiance at long-term historical times.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1069-1072
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• 2003

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising nanoimprint method for cost-effectively defining nanometer scale structures at room temperature and low pressure. Nanostamp fabrication technology is a key technology for UV-NIL because fabricating a high resolution nanostamp is the first step for defining high resolution nanostructures in a substrate. We used quartz as an UV transparent stamp material for the UVNIL. A $5{\times}5{\times}0.09$ inch stamp was fabricated using the quartz etch process in which Cr film was used as a hard mask for transferring nanostructures into the quartz. In this paper, we describe the quartz etching process and discuss the results including SEM images.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.996-1001
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• 2011

A bushing is very important because it must supply the high voltage to the power equipment. Generally, the surface of bushing is contaminated with rain, dust, salt and others. A bushing with contaminations at air are serious problem in insulation. Therefore, it is important to understand the inspection and diagnoses of the safety. The ultra-violet rays(UV) camera has attracted interest from the view point of easy judgement. In this paper, we will report on the corona discharge characteristics on bushing model with contaminations. Also, UV images of discharge in air are analyzed using prototype UV camera of Korea. These results are studied at both AC and DC voltage under a non-uniform field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05a
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• pp.57-60
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• 2001

The characterization of organic Metal/Insulator/Metal(MIM) devices were investigated from LB films. The physicochemical properties of the LB films were by UV absorption spectrum and AFM. We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 2, 10, 30[mN/ml The stable images are probably due to a strong interaction between the monolayer film and glass substrate. We are unable to obtain molecule resolution in images of the films but did see a marked contrast between images of the bare substrate and those with the network structure film deposited onto it.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.350-356
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• 2014

Recently, Chemical Vapor Deposition (CVD) synthetic diamonds have been introduced to the jewelry gem market, as CVD technology has been making considerable advances. Unfortunately, CVD diamonds are not distinguishable from natural diamonds when using the conventional gemological characterization method. Therefore, we need to develop a new identification method that is non-destructive, fast, and inexpensive. In our study, we employed optical microscopy and spectroscopy techniques, including Fourier transform infra-red (FT-IR), UV-VIS-NIR, photoluminescence (PL), micro Raman, and cathodoluminescent (CL) spectroscopy, to determine the differences between a natural diamond (0.30 cts) and a CVD diamond (0.43 cts). The identification of a CVD diamond was difficult when using standard gemological techniques, UV-VIS-NIR, or micro-Raman spectroscopy. However, a CVD diamond could be identified using a FT-IR by the Type II peaks. In addition, we identified a CVD diamond conclusively with the uneven UV fluorescent local bands, additional satellite PL peaks, longer phosphorescence life time, and uneven streaks in the CL images. Our results suggest that using FT-IR combined with UV fluorescent images, PL, and CL analysis might be an appropriate method for identifying CVD diamonds.

• Journal of The Korean Astronomical Society
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• v.37 no.1
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• pp.41-53
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• 2004

It has been a big mystery what drives filament eruptions and flares. We have studied in detail an X1.8 flare and its associated filament eruption that occurred in NOAA Active Region 9236 on November 24,2000. For this work we have analyzed high temporal (about 1 minute) and spatial (about 1 arcsec) resolution images taken by Michelson Doppler Imager (MDI) onboard the Solar and Heliospheric Observatory, Hoc centerline and blue wing ($-0.6{\AA}$) images from Big Bear Solar Observatory, and 1600 ${\AA}$ UV images by the Transition Region and Corona Explorer (TRACE). We have found that there were several transient brightenings seen in H$\alpha$ and, more noticeably in TRACE 1600 ${\AA}$ images around the preflare phase. A closer look at the UV brightenings in 1600 ${\AA}$ images reveals that they took place near one end of the erupting filament, and are a kind of jets supplying mass into the transient loops seen in 1600 ${\AA}$. These brightenings were also associated with canceling magnetic features (CMFs) as seen in the MDI magnetograms. The flux variations of these CMFs suggest that the flux cancellation may have been driven by the emergence of the new flux. For this event, we have estimated the ejection speeds of the filament ranging from 10 to 160 km $s^{-1}$ for the first twenty minutes. It is noted that the initiation of the filament eruption (as defined by the rise speed less than 20 km $s^{-1}$) coincided with the preflare activity characterized by UV brightenings and CMFs. The speed of the associated LASCO CME can be well extrapolated from the observed filament speed and its direction is consistent with those of the disturbed UV loops associated with the preflare activity. Supposing the H$\alpha$/UV transient brightenings and the canceling magnetic features are due to magnetic reconnect ion in the low atmosphere, our results may be strong observational evidence supporting that the initiation of the filament eruption and the preflare phase of the associated flare may be physically related to low-atmosphere magnetic reconnection.

• Macromolecular Research
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• v.11 no.6
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• pp.495-500
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• 2003

UV-induced graft polymerization of glycidyl methacrylate (GMA) to a polypropylene (PP) membrane was carried out in the vapor phase with benzophenone (BP) as a photoinitiator. Attenuated total reflection Fourier transform infrared spectroscopy, atomic force microscopy (AFM), and scanning electron microscopy (SEM) were utilized to characterize the copolymer. The degree of grafting increased with increasing reaction time, increased UV irradiation source intensity, and increased immersion concentration of the BP solution. The optimum synthetic condition for the PP-g-GMA membrane was obtained with a reaction time of 2 hrs, a UV irradiation source intensity of 450 W, and an immersion concentration of the BP solution of 0.5 mol/L. The pure water flux decreased upon increasing the degree of grafting and increasing the amount of diethylamino functional group introduced. The analysis of AFM and SEM images shows that the graft chains and diethylamino groups of PP-g-GMA grew on the PP membrane surface, resulting in a change in surface morphology.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.5
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• pp.91-96
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• 2012

The surface of bushing is contaminated with rain, dust, salt and others. A bushing with contaminations in air is serious problem in insulation. Therefore, it is important to understand the inspection and diagnoses of the safety. The ultra-violet rays(UV) camera has attracted interest from the view point of easy judgement. In this paper, we will report on the corona discharge characteristics of surface flashover model with contaminations in air. Also, UV images of discharge and corona pulse count in air are analyzed using prototype UV camera of Korea and a UV sensor with an optic lens. These results are studied at both AC and DC voltage under a non-uniform field.

• The Bulletin of The Korean Astronomical Society
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• v.41 no.2
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• pp.31.2-31.2
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• 2016

We present our study of the correlation between the UV luminosity and the merging activities of nearby galaxies (d < 300 Mpc). Our study uses ~600 UV-selected galaxies with deep optical imaging data, where the UV selection is made using the GALEX Atlas of Galaxies (Gil de Paz et al. 2007) and the updated UV catalog of nearby galaxies (Yu Bai et al. 2015). Deep optical images allow us to classify merger features using visual inspection, and we also estimate unobscured SFR using UV continuum luminosity. The fraction of galaxies with merger features in each UV luminosity bins are obtained to see if how the fraction of galaxies with merging features changes as a function of UV luminosity, Finally, we will show, above what UV luminosity (or SFR), the merging mechanism becomes an important process in enhancing star formation of galaxies.