• Journal of the KSME
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• v.37 no.12
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• pp.47-52
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• 1997

엑사이머 레이저는 Ar, Kr, Xe등의 희귀가스와 F, Cl과 같은 할로겐족 가스를 혼합하여 방전여기에 의해 발진되는 157-350mm 파장대에 자외선 레이저이다. UV레이저를 이용하면 종래의 기계 가공 공정으로 실현할 수 없는 극소형 및 초정밀의 기계구조, 센서 또는 액츄에이터를 비접촉식으로 할 수 있고 가공시 열손상이 거의 없다. 최근 제품의 소형화 및 박막화 추세에 따른 미세가공 기술의 급속한 발전을 살펴보면, Uv레이저를 이용한 실리콘 표면의 도핑(dopping)에 관한 연구, 미소전자 패키징에 레이저를 이용하는 방법뿐만 아니라, 레이저 유도에 의한 금속과 혼합물의 물질전달 현상을 활용한 마이크로 패터닝에 관한 연구도 진행되고 있다. 본 글에서는 여러가지 응용분야 중 레이저 어블레이션, 레이저유도화학에칭, 레이저 PVD등에 대하여 기술한다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.10a
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• pp.54-54
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• 2003

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.324-326
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• 2004

We have obtained ultra-short pulses with a wavelength of 616 nm from a Distributed Feedback Dye Laser pumped by excimer laser. Using the second harmonic generation, we obtained ultra-short pulse at 308nm in ultraviolet region and also performed amplification in 3 stages of XeCl amplifiers.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.12
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• pp.2310-2316
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• 2016

We studied the effect of $Co^{60}$ gamma-radiation on the fiber Bragg gratings (FBGs) by irradiation time of UV Krypton fluoride (KrF) excimer laser among grating processing parameters. The FBGs were fabricated in a different UV laser irradiation time at 30, 60, 90, and 120 seconds using the same commercial Ge-doped silica core fiber (SMF-28e). It was exposed to gamma-radiation up to a high dose of 34.3 kGy at the dose rate of 106 Gy/min, and then it was analyzed radiation effects by measuring the radiation-induced change in the temperature sensitivity coefficient and Bragg wavelength shift. According to the experimental results, We confirmed that the UV laser irradiation period for grating inscription has a highly effect on the radiation sensitivity of the FBGs. The radiation-induced Bragg wavelength shift by the change of laser irradiation conditions showed a difference more than about 50 %.

• Laser Solutions
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• v.15 no.4
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• pp.16-19
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• 2012

Due to the fact that the dimensions of circuit lines of IC substrates have been forecast to reduce rapidly, engraving the circuit line patterns with laser has emerged as a promising alternative. To engrave circuit line patterns in an IC substrate, we used a projection ablation technique in which a metal (INVAR) mask and a DPSS UV laser instead of an excimer laser are used. Results showed that the circuit line patterns engraved in the IC substrate have a width of about 15um and a depth of $13{\mu}m$. This indicates that the projection ablation with a metal mask and a DPSS UV laser could feasibly replace the semi-additive process (SAP).

• Proceedings of the Korean Society of Laser Processing Conference
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• 2002.05a
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• pp.61-64
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• 2002

• Proceedings of the Korean Society of Laser Processing Conference
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• 2001.05a
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• pp.78-80
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• 2001

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.10a
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• pp.517-518
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• 2006

• Laser Solutions
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• v.14 no.1
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• pp.14-18
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• 2011

Semiconductor industry demands decrease in line/space dimensions of IC substrates. Particularly for IC substrates for CPU, line/space dimensions below $10{\mu}m/10{\mu}m$ are expected to be used in production since 2014. Conventional production technologies (SAP, etc.) based on photolithography are widely agreed to be reaching capability limits. To address this limitation, the embedded circuit fabrication technology using laser ablation has been recently developed. In this paper, we used a nanosecond UV laser and a picosecond UV laser to fabricate embedded circuit patterns into a buildup film with $SiO_2$ powders for IC substrate. We conducted SEM and EDS analysis to investigate surface quality of the embedded circuit patterns. Experimental results showed that due to higher recoil pressure, picosecond UV laser ablation of the buildup film generated a better surface roughness.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.7
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• pp.30-36
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• 2004

Recently, the lead-time of a product is to be shortened in order to satisfy consumer's demand. It is thus important to reduce the manufacturing time and the cost of 3D-shaped microstructures. Micro-Electro-Mechanical Systems (MEMS) and devices are usually fabricated by lithography-based methods. Above method is not flexible for the rapid manufacture of 3D-shaped microstructures because it depends on work's experiences and requires excessive cost and time for making many masks. In this paper, the effective laser micrornachining is developed to fabricate UV sensitive polymer microstructures using laser ablation. The proposed process, named by laser microRP, is a very useful method on rapid manufacturing for 3D-shaped microstructures.