• Title/Summary/Keyword: UV(ultraviolet) light

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Transmission of Solar Light according the Relative CDOM Concentration of the Sea-ice-covered Pacific Arctic Ocean (태평양 북극 결빙 해역 내 유색 용존 유기물 CDOM 분포에 따른 태양광 투과 비교)

  • Kang, Sung-Ho;Kim, Hyun-Choel;Ha, Sun-Yong
    • Ocean and Polar Research
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    • v.40 no.4
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    • pp.281-288
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    • 2018
  • The transmission of solar light according to the distribution of chromophoric dissolved organic matter (CDOM) was measured in the Pacific Arctic Ocean. The Research Vessel Araon visited the ice-covered East Siberian and Chukchi Seas in August 2016. In the Arctic, solar [ultraviolet-A (UV-A), ultraviolet-B (UV-B), and photosynthetically active radiation (PAR)] radiation reaching the surface of the ocean is primarily protected by the distribution of sea ice. The transmission of solar light in the ocean is controlled by sea ice and dissolved organic matter, such as CDOM. The concentration of CDOM is the major factor controlling the penetration depth of UV radiation into the ocean. The relative CDOM concentration of surface sea water was higher in the East Siberian Sea than in the Chukchi Sea. Due to the distribution of CDOM, the penetration depth of solar light in the East Siberian Sea (UV-B, $9{\pm}2m$; UV-A, $13{\pm}2m$; PAR, $36{\pm}4m$) was lower than in the Chukchi Sea (UV-B, $15{\pm}3m$; UV-A, $22{\pm}3m$; PAR, $49{\pm}3m$). Accelerated global warming and the rapid decrease of sea ice in the Arctic have resulted in marine organisms being exposed to increased harmful UV radiation. With changes in sea ice covered areas and concentrations of dissolved organic matter in the Arctic Ocean, marine ecosystems that consist of a variety of species from primary producers to high-trophic-level organisms will be directly or indirectly affected by solar UV radiation.

WTP UV Disinfection System (국내하수처리장 자외선소독조 운영실태 및 기술동향)

  • Lee, J.Y.;Kim, Y.T.;Lee, T.J.
    • 유체기계공업학회:학술대회논문집
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    • 2005.12a
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    • pp.126-132
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    • 2005
  • UV disinfection system allows the disinfection of municipal and industrial water and wastewater without the use of expensive chlorination and dechlorination techniques, labor intensive equipments In traditional ultraviolet systems the UV lamps are seperated from water by quartz sleeves. quartz is one of. the few materials that is virtually transparent to UV light, the UV lamp is placed inside the Quartz sleeve. UV light from the lamp is passed through the quartz and into the water, thereby providing disinfection. In fluoropolymer tube-used non-contact UV systems, the water flows through fluoropolymer plastic tubes. banks of UV lamps surround these tubes such that each tube gets exposed to ultra violet light from all sides. in non-contact design the lamps operates at almost constant temperature. this design is extremly efficient in the utilization of UV energy and superior to conventional contact- systems.

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Bactericidal Effect of Ultraviolet and Dry Treatment on Bacterial Contaminants in Facial Masks (Ultraviolet 및 건조 처리에 의한 마스크에 오염된 미생물 살균 효과)

  • Park, Seul-Ki;Lee, Da-eun;Jo, Du-Min;Song, Mi-Ru;Kim, Young-Mog
    • Microbiology and Biotechnology Letters
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    • v.50 no.1
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    • pp.95-101
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    • 2022
  • Due to the pandemic caused by COVID-19, the demand for face masks is soaring and has often caused a shortage. The aim of this study was to evaluate the effect of ultraviolet (UV) and drying treatments on microbial contaminants in facial masks. To conduct this study, standard procedures were designed to develop samples contaminated by the control bacteria Escherichia coli, Staphylococcus aureus, and Pseudomonas aeruginosa. The contamination level of the standard samples was approximately 6.30 × 106 CFU/ml, and the UV light treatment was performed 1, 3, 5, and 7 times. To evaluate the effect of the UV and drying treatments, the masks were first treated with UV 1, 2, and 3 times, followed by the drying process. As a result, the mask contaminated with E. coli and P. aeruginosa showed a bacterial rate of approximately 99.9% after 1 UV irradiation, and in the case of the S. aureus-contaminated mask, it exhibited a bactericidal rate of approximately 99.9% after 7 UV irradiations. However, when the drying process was included after UV irradiation, all the samples contaminated with E. coli, S. aureus, and P. aeruginosa showed a bactericidal rate of 99.9% or more. The results of this study suggest that UV and drying treatments can effectively reduce the bacterial contaminants in facial masks. In addition, these results provide fundamental data and appropriate sterilization methods for reusing masks.

Relationship between the pretilt angle generation and the polarization component with linearily polarized UV light irradiation on polymer surface. (직선편광된 UV광을 폴리이미드막에 조사한 경우의 프리틸트각의 발생과 편광성분의 상호관계)

  • Seo, Dae-Shik;Park, Doo-Seok;Han, Jeong-Min
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1391-1394
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    • 1998
  • In this paper, we investigated the generation of pretilt for nematic liquid crystal (NLC) in a cell with linearly polarized ultraviolet (UV) light irradiation on polyimide (PI) surface. The pretilt angle of the NLC increases with increasing the incident angle in the cells with S-wave polarized UV light irradiation on PI surface. It is considered that the pretilt angle of the NLC increased due to decreasing the UV light intencity. We suggest that the pretilt angle of the NLC is attributed to asymmetry triangular of the polymer surface with S-wave polarized UV light irradiation on PI surface. Also, we consider that the asymmetry triangular of the Polymer not formed with P-wave polarized UV light irradiation on PI surface. Therefore, the pretilt angle of the NLC is attributed to asymmetry triangular of the polymer surface with UV light irradiation on PI surface.

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Driving Method of Ultraviolet Sensor for Fire alarms using Pulse Width Modulation (PWM을 이용한 화재 감지를 위한 자외선 센서의 구동 방법)

  • Lim, Byung-Hyun;Ko, Nak-Yong;Hwang, Jong-Sun;Kim, Yeong-Min
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.05c
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    • pp.31-35
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    • 2004
  • We propose driving method of Ultraviolet sensor for fire alarms using pulse width modulation that used to fire detector with sensor of private-use detectable light energy as ultraviolet in energy of electromagnetic-wave type radiate from flame, when combustible burn with contain carbon,. Ultraviolet sensor is UV Tron using gas multiplication effect to current discharge and photoelectric effect of metal. To have high sensibility and to gain proper output voltage, it has high responsive performance. This research designed driving circuit with UV sensors and proposed method of false alarm reduced to resemble fire. the result propers the prevention and extinction of fire technique degree, certificated operation of detector.

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A Water Tap Equipped with a Sterlization/Purification System of Non-contact UV-lamp (비접촉식 자외선램프를 이용한 살균/정화 수도꼭지)

  • Min, Kyoung-Won;Won, Jong-Heon;Lee, Hyun-Cheol;Han, Dong-Youl
    • Journal of Industrial Technology
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    • v.27 no.B
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    • pp.3-7
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    • 2007
  • Ultraviolet light(UV-C, wavelength: 200~280nm) is employed profitably for sterilizing drinking water. For most water serving apparatus such as a water purifier, a water cooler and heater, a coffee vending machine and etc., pre-sterilized water may be contaminated secondarily with bacillary inhabitation in a container before serving. In consideration of this problem, a household water tap which is equipped with a sterilization/Purification device in combination with non-contact UV-lamp, was designed to sterilize and purify water at the last outlet just before serving. Hopefully this simple but creative item may be commercialized for household and public use.

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Degradation of Natural Dyed Silk Fabrics under Ultraviolet Light(UV) -Focused on Gardenia and Sappanwood- (자외선에 의한 천연 염색 견직물의 취화 연구 -치자, 소목 염색을 중심으로-)

  • Shin, Youn-Sook;Choi, Seung-Youn
    • Journal of the Korean Society of Clothing and Textiles
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    • v.31 no.5 s.164
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    • pp.659-669
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    • 2007
  • The purpose of this study was to investigate the degradation of silk fabrics dyed with gardenia and sappanwood by Ultraviolet Light(UV). To asses the effect of uv on dyed silk fabrics, physical and chemical properties of samples were explored. K/S value rapidly decreased with increasing exposure time. Mordanting improved ultraviolet-cut ability and the sappanwood dyed samples were superior to those of gardenia dyed in ultraviolet-cut ability. Color progressively faded away as uv exposure time increased, accordingly, $L^*,\;a^*,\;b^*$, H/VC, ${\Delta}E$ were changed. Morphological change observed with SEM represented degradation of silk fabrics from the outer fibril to the inner fibril. Tensile Strength abruptly decreased as uv exposure time increased and the mordanted samples showed higher tensile strength than the unmordanted. FT-IR analysis confirmed that main peaks at 3297 and $1704cm^{-1}$ band for silk fabric were due to N-H and C=O stretching, gardenia peaks at 1654 and $668cm^{-1}$ band representing C=O(ester), C=C(alken) and O-C=O(carboxylic acids) of crocin and sappanwood peaks at $1715cm^{-1}$ band representing C=O(cyclic keton) of brazilin appeared on the samples exposed for 14 days, but these peaks indicating colorants after 28 days of uv exposure faded away due to prolonged exposure of uv.

Hazards Caused by UV Rays of Xenon Light Based High Performance Solar Simulators

  • Dibowski, Gerd;Esser, Kai
    • Safety and Health at Work
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    • v.8 no.3
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    • pp.237-245
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    • 2017
  • Background: Solar furnaces are used worldwide to conduct experiments to demonstrate the feasibility of solar-chemical processes with the aid of concentrated sunlight, or to qualify high temperature-resistant components. In recent years, high-flux solar simulators (HFSSs) based on short-arc xenon lamps are more frequently used. The emitted spectrum is very similar to natural sunlight but with dangerous portions of ultraviolet light as well. Due to special benefits of solar simulators the increase of construction activity for HFSS can be observed worldwide. Hence, it is quite important to protect employees against serious injuries caused by ultraviolet radiation (UVR) in a range of 100 nm to 400 nm. Methods: The UV measurements were made at the German Aerospace Center (DLR), Cologne and Paul-Scherrer-Institute (PSI), Switzerland, during normal operations of the HFSS, with a high-precision UV-A/B radiometer using different experiment setups at different power levels. Thus, the measurement results represent UV emissions which are typical when operating a HFSS. Therefore, the biological effects on people exposed to UVR was investigated systematically to identify the existing hazard potential. Results: It should be noted that the permissible workplace exposure limits for UV emissions significantly exceeded after a few seconds. One critical value was strongly exceeded by a factor of 770. Conclusion: The prevention of emissions must first and foremost be carried out by structural measures. Furthermore, unambiguous protocols have to be defined and compliance must be monitored. For short-term activities in the hazard area, measures for the protection of eyes and skin must be taken.

Ultraviolet and visible light detection characteristics of amorphous indium gallium zinc oxide thin film transistor for photodetector applications

  • Chang, Seong-Pil;Ju, Byeong-Kwon
    • International journal of advanced smart convergence
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    • v.1 no.1
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    • pp.61-64
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    • 2012
  • The ultraviolet and visible light responsive properties of the amorphous indium gallium zinc oxide thin film transistor have been investigated. Amorphous indium gallium zinc oxide (a-IGZO) thin film transistor operate in the enhancement mode with saturation mobility of $6.99cm^2/Vs$, threshold voltage of 13.5 V, subthreshold slope of 1.58 V/dec and an on/off current ratio of $2.45{\times}10^8$. The transistor was subsequently characterized in respect of visible light and UV illuminations in order to investigate its potential for possible use as a detector. The performance of the transistor is indicates a high-photosensitivity in the off-state with a ratio of photocurrent to dark current of $5.74{\times}10^2$. The obtained results reveal that the amorphous indium gallium zinc oxide thin film transistor can be used to fabricate UV photodetector operating in the 366 nm.