• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.196-196
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• 2011

Molecular $N_2O$ has bee known to react over oxygen vacancy on a reduced rutile $TiO_2$(110)-1${\times}$1 surface to desorb as molecular $N_2$ leaving oxygen atom behind. In the present study, we investigated the reaction of $N_2O$ on rutile $TiO_2$(110) using temperature-programmed desorption (TPD). Our results indicate that $N_2O$ does not react over the oxygen vacancy under a typical UHV experimental condition. On a rutile $TiO_2$(110)-1${\times}$1 with a well-defined oxygen vacancy concentration of 5% ($2.6{\times}10^{13}/cm^2$), $N_2O$ desorption features show a monolayer peak maximum at 135 K followed by a small peak maximum at 170 K. When the oxygen vacancy is blocked with $H_2O$, the $N_2O$ peak at 170 K disappears completely, indicating that the peak is due to molecular $N_2O$ interacting with oxygen vacancy. The integrated amount of desorbed $N_2O$ plotted against the amount of adsorbed $N_2O$ however shows a straight line with no offset indicating no loss of $N_2O$ during our cycles of TPD measurements. In addition, our $N_2O$ uptake measurements at 70~100 K showed no $N_2$ (as a reaction product) desorption except contaminant $N_2$. Also, $H_2O$ TPD taken after $N_2O$ scattering up to 350 K indicates no change in the vacancy-related $H_2O$ desorption peak at 500 K showing no change in the oxygen vacancy concentration after the interaction with $N_2O$.

• 한국재료학회지
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• 제4권2호
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• pp.136-142
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• 1994

초청장 Si(111)기탄상에 초고진공 챔버에서 Ti을 증착하여 $TiSi_{2}$를 에피층으로 성장시켰다. 재구성된 (reconstructed) Di(111)표면에 상온에서 50$\AA$ 두께의 Ti을 증착한 후 $100^{\circ}C$간격으로 $800^{\circ}C$까지 열처리 하였다. $TiSi_{2}$박막의 구조는 전자회절 패턴 분석을 통하여 준안정상인 C49상임을 확인하였다. SEM 사진은 세가지 형태의 island를 보이고 있다. 각 island 는 단결정이며 그 구조는 서로 다른 결정학적 방향을 갖는 에피구조이다. 이러한 TiSi$_{2}$ island[112]C49 TiSi$_{2}$/[110]Si, (021) C49 $TiSi_{2}$/(111)Si의 방향관계를 가지고 있다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.70.1-70.1
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• 2012

In-situ X-ray photoelectron spectroscopy (XPS) and infrared (IR) spectroscopy studies of SOFC cathode materials will be discussed in this presentation. The mixed conducting perovskites (ABO3) containing rare and alkaline earth metals on the A-site and a transition metal on the B-site are commonly used as cathodes for solid oxide fuel cells (SOFC). However, the details of the oxygen reduction reaction are still not clearly understood. The information about the type of adsorbed oxygen species and their concentration is important for a mechanistic understanding of the oxygen incorporation into these cathode materials. XPS has been widely used for the analysis of adsorbed species and surface structure. However, the conventional XPS experiments have the severe drawback to operate at room temperature and with the sample under ultrahigh vacuum (UHV) conditions, which is far from the relevant conditions of SOFC operation. The disadvantages of conventional XPS can be overcome to a large extent with a "high pressure" XPS setup installed at the BESSY II synchrotron. It allows sample depth profiling over 2 nm without sputtering by variation of the excitation energy, and most importantly measurements under a residual gas pressure in the mbar range. It is also well known that the catalytic activity for the oxygen reduction is very sensitive to their electrical conductivity and oxygen nonstoichiometry. Although the electrical conductivity of perovskite oxides has been intensively studied as a function of temperature or oxygen partial pressure (Po2), in-situ measurements of the conductivity of these materials in contact with the electrolyte as a SOFC configuration have little been reported. In order to measure the in-plane conductivity of an electrode film on the electrolyte, a substrate with high resistance is required for excluding the leakage current of the substrate. It is also hardly possible to measure the conductivity of cracked thin film by electrical methods. In this study, we report the electrical conductivity of perovskite $La_{0.6}Sr_{0.4}CoO_{3-{\delta}}$ (LSC) thin films on yttria-stabilized zirconia (YSZ) electrolyte quantitatively obtained by in-situ IR spectroscopy. This method enables a reliable measurement of the electronic conductivity of the electrodes as part of the SOFC configuration regardless of leakage current to the substrate and cracks in the film.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.24.2-24.2
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• 2009

Nanostuctures such as nanodot and nanowire have been extensively studied as building blocks for nanoscale devices. However, the direct growth of the nanostuctures at the desired position is one of the most important requirements for realization of the practical devices with high integrity. Self-assembled nanotemplate is one of viable methods to produce highly-ordered nanostructures because it exhibits the highly ordered nanometer-sized pattern without resorting to lithography techniques. And selective epitaxial growth (SEG) can be a proper method for nanostructure fabrication because selective growth on the patterned openings obtained from nanotemplate can be a proper direction to achieve high level of control and reproducibility of nanostructucture fabrication. Especially, SiGe has led to the development of semiconductor devices in which the band structure is varied by the composition and strain distribution, and nanostructures of SiGe has represented new class of devices such nanowire metal-oxide-semiconductor field-effect transistors and photovoltaics. So, in this study, various shaped SiGe nanostructures were selectively grown on Si substrate through ultrahigh vacuum chemical vapor deposition (UHV-CVD) of SiGe on the hexagonally arranged Si openings obtained using nanotemplates. We adopted two types of nanotemplates in this study; anodic aluminum oxide (AAO) and diblock copolymer of PS-b-PMMA. Well ordered and various shaped nanostructure of SiGe, nanodots and nanowire, were fabricated on Si openings by combining SEG of SiGe to self-assembled nanotemplates. Nanostructure fabrication method adopted in this study will open up the easy way to produce the integrated nanoelectronic device arrays using the well ordered nano-building blocks obtained from the combination of SEG and self-assembled nanotemplates.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권1호
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• pp.16-19
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• 2006

The characteristic of negative differential resistance(NDR) is decreased current when the applied voltage is increased. The NDR is potentially very useful in molecular electronics device schemes. Here, we investigated the NDR characteristic of self-assembled 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto $pre-treatment(H_2SO_4:H_2O_2=3:1)$ Si. The Au substrate was exposed to a 1 mM/1 solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a 0.1 ${\mu}M/l$ solution of 4.4'-di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2,$ and finally blown dry with N_2. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -2 V to +2 V with 298 K temperature. The vacuum condition was $6{\time}10^{-8}$ Torr. As a result, we found the NDR voltage of the 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate were $-1.61{\pm}0.26$ V(negative region) and $1.84{\pm}0.33$ V(positive region). respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1844-1846
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• 2005

The characteristic of negative differential resistance(NDR) is decreased current when the applied voltage is increased. The NDR is potentially very useful in molecular electronics device schemes. Here, we investigated the NDR property of self-assembled 4,4- Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto pre-treatment$(H_2SO_4:H_2O_2=3:1)$ Si. The Au substrate was exposed to a 1mM/l solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a $0.1{\mu}M/l$ solution of 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2$, and finally blown dry with $N_2$. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -2V to +2V with 299K temperature. The vacuum condition is $6{\times}10^{-8}$ Torr. As a result, we found the NDR voltage of the nitro-benzene is $-1.61{\pm}0.26$ V(negative region) and $1.84{\pm}0.33$ (positive region), respectively.

• 조명전기설비학회논문지
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• 제29권8호
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• pp.98-103
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• 2015

Power plant is that very high reliability when industrial and economic impact on the overall electric power system is required, it is essential to improve the reliability, especially the fault prediction diagnosis. Since an accident caused by the partial discharge in the power plant is above state has a faster response characteristic than the other indications in the case of any, the partial discharge generated in the power plant immediately detect the deterioration of insulation due to the accident of the power plant and the non-drawn It should prevent or reduce. Partial Discharge Measuring Systems for UHV SF6 Gas Insulated Switchgear and power transformer on site installed has some probability of abnormal recognition in case of non-flexible deal with on site noise. Many methode to eliminate these kinds of noises, UHF Detection System is chosen as purchase description in Korea, but this system having a bandwidth between 500MHz 1.5GHz wide band. Initial install periods(about 20 years ago), this band had no strong signal source, but in these days this wide band have strong signals, such as LTE. So, module described in this paper is designed as simultaneously use with wide and narrow band for solve this noise problem, and introduce this system.

• Journal of Korean Vacuum Science & Technology
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• 제2권2호
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• pp.63-77
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• 1998

The oxidation of NiAl(110) was investigated in the temperature regime between 300K and 1300 K using LEED (low energy electron diffraction), TPD (temperature programmed desorption) and HREELS (high resolution electron energy loss spectroscopy). The adsorption of N2O and O2 up to reconstructions. Stepwise annealing of the oxygen-saturated sample from 600 K to 1300K in UHV (ultra-high vacuum,) results in firstly the onset of randomly oriented then finally fairly well-ordered. 5 ${\AA}$ Al2O3 film with quasi-hexagonal periodicity. Ordered thicker oxide films of 18-30 ${\AA}$ seem to be grown on this interfacial oxide layer by direct oxidation of sample at elevated temperature between 1150 and 1300 K because of the LEED pattern consisting of new broad hexagonal spots and the previous 5 ${\AA}$ spots. Although the periodicity of surface oxygen arrays shows no significant change from an hexagonal close-packing, the O-O distance changes from ∼3.0 ${\AA}$ film to ∼2.9 ${\AA}$ for thicker oxides. with the appearance of Auger parameter, for the 5${\AA}$ film can be described better as an interfacial oxide layer. The observation of three symmetric phonon peaks can be also a supporting evidence for this phase assignment since thicker oxide films on the Same Ni2Al3(110) show somewhat different phonon structure much closer to that of the ${\gamma}$-Al2O3. The adsorption/desorption of methanol further proves the preparation of less-defective and/or oxygen-terminated Al2O3 films showing ordered phase transitions with the change of oxide thickness between 5 ${\AA}$ to 30 ${\AA}$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.87-87
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• 2010

Adsorption and subsequent catalytic reactions of ethanol and acetaldehyde on chemically modified rutile TiO2(001) surfaces are probed by x-ray photoemission spectroscopy (XPS) using synchrotron radiation. TiO2 is a well-known photocatalyst for various catalytic reactions including oxidation of organic molecules. In this respect, the surface atomic structure has been found to play a vital role in determining the catalytic reactivity and selectivity of TiO2. In this study, we employ an atomically well-ordered reduced TiO2(001) surface which is prepared in a UHV chamber by repeated Ar+-sputtering and annealing (900 K) cycles. We systematically modify the surface by treating the surface with H2O or O2 at room temperature (RT). The catalytic reactivity of the surface-modified TiO2(001) is evaluated by dosing ethanol/acetaldehyde onto the surface at RT and by subsequent annealing to higher temperatures (400~600 K). XPS spectra of C 1s core level are intensively used to probe any change in the oxidation state of carbon atoms. We find that the reactivity as well as the saturation coverage are significantly affected by the RT-treatment of the TiO2 surface with H2O or O2. For both reactant molecules (ethanol/acetaldehyde), oxidation reactions are found to be enhanced on the O2-treated surface compared with the reduced or H2O-treated surfaces. Possibly reaction pathways are discussed based on the observed XPS spectra.

• 한국자기학회지
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• 제12권6호
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• pp.212-217
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• 2002

비자성층을 사이에 둔 두 강자성층의 보자력 차이를 이용하여 거대자기저항특성을 나타내는 Ta/CoFe/Cu/NiFe/Ta 구조의 pseudo 스핀밸브를 DC 마그네트론 스퍼터링 방법으로 제조하였다. Ta/CoFe/Cu/NiFe/Ta 구조에서 CoFe층의 두께 변화에 따른 자화 특성 및 자기저항 특성을 조사하였으며, 이 구조에서 CoFe층의 두께가 60 $\AA$일 때 자기저항비는 3.82%이고 CoFe층과 NiFe층 사이의 보자력 차이는 27.4 Oe이다. Ta/CoFe/Cu/NiFe/Ta 구조를 갖는 pseudo 스핀밸브에서 CoFe층과 NiFe층의 보자력 차이는 CoFe층의 두께가 20 $\AA$에서 40 $\AA$까지 증가함에 따라 증가하였으며 40 $\AA$ 이상에서는 감소하였다. 이와 같은 결과는 박막의 결정성 및 포화 자기변형(λ$_{s}$)의 변화에 의한 것으로 판단된다. Cu층과 NiFe층 사이에 CoFe층을 삽입한 Ta/CoFe/Cu/NiFe/Ta 구조에서 삽입층인 CoFe층의 두께 변화에 따른 자화특성 및 자기저항 특성을 조사한 결과 CoFe두께가 10$\AA$시 자기저항비가 6.7 %이며. 삼층막 구조 보다 자기저항비가 약 1.5배 이상 증가함을 알 수 있었다.