• 제목/요약/키워드: UBM

검색결과 185건 처리시간 0.026초

전해 도금법을 이용한 공정 납-주석 플립 칩 솔더 범프와 UBM(Under Bump Metallurgy) 계면반응에 관한 연구 (Studies on the Interfacial Reaction between electroplated Eutectic Pb/Sn Flip-Chip Solder Bump and UBM(Under Bump Metallurgy))

  • 장세영;백경옥
    • 한국재료학회지
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    • 제9권3호
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    • pp.288-294
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    • 1999
  • 솔더 범프를 사용하는 플립 칩 접속기술에서 범프와 칩 사이에 위치하는 금속 충들의 조합을 UBM(Under Bump Metallurgy)라고 부르며 이 UBM을 어떤 조합으로 사용하는 가에 따라 접속의 안정성이 크게 좌우된다. 본 연구에서는 UBM중에서 솔더 접착 층으로 사용되는 구리 층의 두께를 $1\mu\textrm{m}와 5\mu\textrm{m}$로 하는 한편 barrier 층으로 사용되는 금속 층을 Ti, Ni, Pd으로 변화시키면서 이들 UBM과 공정 납-주석 사이의 계면반응을 살펴보았다. 이를 위해 $100\mu\textrm{m}$ 크기의 솔더 범프를 전해도금법을 사용하여 제작하고 리플로 횟수와 시효시간에 따른 각 UBM에서의 금속간 화합물의 성장을 관찰하였다. $Cu_6Sn_5 \eta'$-상 금속간 화합물이 모든 조건에서 형성되었고 Cu층의 두께가 $5\mu\textrm{m}$로 두꺼운 경우에는 $Cu_3Sn \varepsilon$-상도 관찰되었다. Pd을 사용한 UBM 구조에서는 시효 처리시에 $Cu_6Sn_5$ 상 아래쪽에 $PdSn_4$상이 형성되었다. 또한 이들 계면에서의 금속간 화합물의 성장은 솔더 범프의 접속강도 값과 밀접한 관계를 가진다.

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Effect of under-bump-metallization structure on electromigration of Sn-Ag solder joints

  • Chen, Hsiao-Yun;Ku, Min-Feng;Chen, Chih
    • Advances in materials Research
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    • 제1권1호
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    • pp.83-92
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    • 2012
  • The effect of under-bump-metallization (UBM) on electromigration was investigated at temperatures ranging from $135^{\circ}C$ to $165^{\circ}C$. The UBM structures were examined: 5-${\mu}m$-Cu/3-${\mu}m$-Ni and $5{\mu}m$ Cu. Experimental results show that the solder joint with the Cu/Ni UBM has a longer electromigration lifetime than the solder joint with the Cu UBM. Three important parameters were analyzed to explain the difference in failure time, including maximum current density, hot-spot temperature, and electromigration activation energy. The simulation and experimental results illustrate that the addition 3-${\mu}m$-Ni layer is able to reduce the maximum current density and hot-spot temperature in solder, resulting in a longer electromigration lifetime. In addition, the Ni layer changes the electromigration failure mode. With the $5{\mu}m$ Cu UBM, dissolution of Cu layer and formation of $Cu_6Sn_5$ intermetallic compounds are responsible for the electromigration failure in the joint. Yet, the failure mode changes to void formation in the interface of $Ni_3Sn_4$ and the solder for the joint with the Cu/Ni UBM. The measured activation energy is 0.85 eV and 1.06 eV for the joint with the Cu/Ni and the Cu UBM, respectively.

플립칩용 UBM (Under Bump Metallurgy)연구의 최근동향 (Recent UBM (Under Bump Metallurgy) Studies for Flip Chip Application)

  • Jang, Se-Young;Paik, Kyung-Wook
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2001년도 추계 기술심포지움
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    • pp.49-54
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    • 2001
  • This paper presents several UBM (Under Bump Metallurgy) systems which are currently used for wafer level solder bumping technology. The advantages and disadvantages of each UBM are summarized from the point of view of process compatability and interface morphological stability.

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HMM-UBM의 주 상태 정보를 이용한 음성 기반 문맥 독립 화자 검증 (Text Independent Speaker Verficiation Using Dominant State Information of HMM-UBM)

  • 손수원;노진상;김성수;이재원;고한석
    • 한국음향학회지
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    • 제34권2호
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    • pp.171-176
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    • 2015
  • 본 논문에서는 Hidden Markov Model(HMM) - Universal Background Model(UBM)의 주 상태 정보 기반의 i-vector 추출 기술을 제안한다. Ergodic HMM이 UBM을 추정하는데 쓰였으며, 이를 통해 동일 화자 음성에도 다양하게 존재하는 특성을 HMM states로 분류할 수 있다. 제안한 방법을 이용하면 HMM의 state 개수에 따라 i-vector 들이 추출되는데, 주 상태 정보 방법을 통해 이들 중 하나를 선택한다. 제안한 방법을 검증하기 위해 National Institute of Standards and Technology(NIST) Speaker Recognition Evaluation(SRE) database를 이용하여 실험을 하였으며, Equal Error Rate(EER) 성능 수치에서 12 %의 성능 향상을 확인할 수 있었다.

광패키징용 마이크로 솔더범프의 형성과 Contact Pad용 UBM간의 계면 반응 특성에 관한 연구 (A Study on Bumping of Micoro-Solder for Optical Packaging and Reaction at Solder/UBM interface)

  • 박종환;이종현;김용석
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.332-336
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    • 2001
  • In this study, the reaction at UBM(Under Bump Metallurgy) and solder interface was investigated. The UBM employed in conventional optical packages, Au/Pt/Ti layer, were found to dissolve into molten Au-Sn eutectic solder during reflow soldering. Therefore, the reaction with different diffusion barrier layer such as Fe, Co, Ni were investigated to replace the conventional Pt layer. The reaction behavior was investigated by reflowing the solder on the pad of the metals defined by Cr layer for 1, 2, 3, 4, and 5 minutes at $330^{\circ}C$. Among the metals, Co was found to be most suitable for the diffusion barrier layer as the wettability with the solder was reasonable and the reaction rate of intermetallic formation at the interface is relatively slow.

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GMM-Based Maghreb Dialect Identification System

  • Nour-Eddine, Lachachi;Abdelkader, Adla
    • Journal of Information Processing Systems
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    • 제11권1호
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    • pp.22-38
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    • 2015
  • While Modern Standard Arabic is the formal spoken and written language of the Arab world; dialects are the major communication mode for everyday life. Therefore, identifying a speaker's dialect is critical in the Arabic-speaking world for speech processing tasks, such as automatic speech recognition or identification. In this paper, we examine two approaches that reduce the Universal Background Model (UBM) in the automatic dialect identification system across the five following Arabic Maghreb dialects: Moroccan, Tunisian, and 3 dialects of the western (Oranian), central (Algiersian), and eastern (Constantinian) regions of Algeria. We applied our approaches to the Maghreb dialect detection domain that contains a collection of 10-second utterances and we compared the performance precision gained against the dialect samples from a baseline GMM-UBM system and the ones from our own improved GMM-UBM system that uses a Reduced UBM algorithm. Our experiments show that our approaches significantly improve identification performance over purely acoustic features with an identification rate of 80.49%.

플립칩 패키지에서 UBM 및 IMC 층의 형상 모델링 (Solid Modeling of UBM and IMC Layers in Flip Chip Packages)

  • 신기훈;김주한
    • 한국공작기계학회논문집
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    • 제16권6호
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    • pp.181-186
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    • 2007
  • UBM (Under Bump Metallurgy) of flip chip assemblies consists of several layers such as the solder wetting, the diffusion barrier, and the adhesion layers. In addition, IMC layers are formed between the solder wetting layers (e.g. Cu, Ni) and the solder. The primary failure mechanism of the solder joints in flip chips is widely known as the fatigue failure caused by thermal fatigues or electromigration damages. Sometimes, the premature brittle failure occurs in the IMC layers. However, these phenomena have thus far been viewed from only experimental investigations. In this sense, this paper presents a method for solid modeling of IMC layers in flip chip assemblies, thus providing a pre-processing tool for finite element analysis to simulate the IMC failure mechanism. The proposed modeling method is CSG-based and can also be applied to the modeling of UBM structure in flip chip assemblies. This is done by performing Boolean operations according to the actual sequences of fabrication processes

광패키징용 마이크로 솔더범프의 형성과 Contact Pad용 UBM간의 계면 반응 특성에 관한 연구 (A Study on Bumping of Micro-Solder for Optical Packaging and Reaction at Solder/UBM interface)

  • 박종환;이종현;김용석
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.332-336
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    • 2001
  • In this study, the reaction at UBM(Under Bump Metallurgy) and solder interface was investigated. The UBM employed in conventional optical packages, Au/Pt/Ti layer, were found to dissolve into molten Au-Sn eutectic solder during reflow soldering. Therefore, the reaction with different diffusion barrier layer such as Fe, Co, Ni were investigated to replace the conventional R layer. The reaction behavior was investigated by reflowing the solder on the pad of the metals defined by Cr layer for 1, 2, 3, 4, and 5 minutes at 330$^{\circ}C$. Among the metals, Co was found to be most suitable for the diffusion barrier layer as the wettability with the solder was reasonable and the reaction rate of intermetallic formation at the interface is relatively slow.

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전해 도금된 주석 솔더 범프의 계면 반응과 전단 강도에 미치는 UBM의 효과 (Effect of Under Bump Metallization (UBM) on Interfacial Reaction and Shear Strength of Electroplated Pure Tin Solder Bump)

  • 김유나;구자명;박선규;정승부
    • 대한금속재료학회지
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    • 제46권1호
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    • pp.33-38
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    • 2008
  • The interfacial reactions and shear strength of pure Sn solder bump were investigated with different under bump metallizations (UBMs) and reflow numbers. Two different UBMs were employed in this study: Cu and Ni. Cu6Sn5 and Cu3Sn intermetallic compounds (IMCs) were formed at the bump/Cu UBM interface, whereas only a Ni3Sn4 IMC was formed at the bump/Ni UBM interface. These IMCs grew with increasing reflow number. The growth of the Cu-Sn IMCs was faster than that of the Ni-Sn IMC. These interfacial reactions greatly affected the shear properties of the bumps.

다양한 소리 환경에서 UBM 기반의 비명 소리 검출 (Scream Sound Detection Based on Universal Background Model Under Various Sound Environments)

  • 정용주
    • 한국전자통신학회논문지
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    • 제12권3호
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    • pp.485-492
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    • 2017
  • GMM(: Gaussian Mixture Model)은 비명 소리를 검출하기 위해서 가장 많이 사용되는 기법의 하나이다. 기존의 GMM 방식에서는 전체 훈련데이터를 비명소리와 비-비명 소리로 나누고, 훈련과정을 통하여 각각의 GMM 모델을 생성하게 된다. 그러나 본 연구에서는 비명 소리 검출 과정이 화자인식과 매우 유사하다는 점에 착안하여 화자인식에서 매우 효과적으로 사용된 UBM(: Universal Background Model) 방식을 비명소리 검출에 적용할 것을 제안하였다. 제안된 UBM 방식을 통한 검출 실험 결과 기존의 GMM 방식에 비하여 더 나은 검출 성능을 보임을 인식 실험을 통하여 확인 할 수 있었다.