• Journal of the Microelectronics and Packaging Society
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• v.7 no.4
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• pp.23-29
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• 2000

We demonstrate the fabrication method of high-density and high-quality solder bump solving a copper (Cu) cross-contamination in Si-LSI laboratory. The Cu cross-contamination is solved by separating solder-bump process by two steps. Former is via-formation process excluding Cu/Ti under ball metallurgy (UBM) layer sputtering in Si-LSI laboratory. Latter is electroplating process including Ti-adhesion and Cu-seed layers sputtering out of Si-LSI laboratory. Thick photoresist (PR) is achieved by a multiple coating method. After TiW/Al-electrode sputtering for electroplating and via formation in Si-LSI laboratory, Cu/Ti UBM layer is sputtered on sample. The Cu-seed layer on the PR is etched during Cu-electroplating with low-electroplating rate due to a difference in resistance of UBM layer between via bottom and PR. Therefore Cu-buffer layer can be electroplated selectively at the via bottom. After etching the Ti-adhesion layer on the PR, Sn/Pb solder layer with a composition of 60/40 is electroplated using a tin-lead electroplating bath with a metal stoichiometry of 60/40 (weight percent ratio). Scanning electron microscope image shows that the fabricated solder bump is high-uniformity and high-quality as well as symmetric mushroom shape. The solder bumps with even 40/60 $\mu\textrm{m}$ in diameter/pitch do not touch during electroplating and reflow procedures. The solder-bump process of high-uniformity and high-density with the Cu cross-contamination free in Si-LSI laboratory will be effective for electronic microwave application.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.253-258
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• 2005

Characteristics of electroplated Ni films such as grain size, resistivity, solder wetting angle, and growth rate of intermetallic compound were evaluated as a function of electroplating current density. With increasing the electroplating current density from $5\;mA/cm^2 $ to $40\;mA/cm^2 $, the nodule size on the Ni film surface decreased, grain refinement occurred, and resistivity increased from $7.37\mu\Omega-cm$ to $9.13\mu\Omega-cm$. Compared with Ni film processed at $40\;mA/cm^2 $, Ni films electroplated at $5\;mA/cm^2 $ and $10\;mA/cm^2 $ exhibited low resistivity, dense microstructure, and slow growth rate of intermetallic compound. Ni films electroplated at $5\;mA/cm^2 $ and $10\;mA/cm^2 $ are more suitable for Ni UBM application than that fabricated at $40\;mA/cm^2 $.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.85-91
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• 2002

Even though electroless Hi and Sn-Ag-Cu solder are widely used materials in electronic packaging applications, interfacial reactions of the ternary Ni-Cu~Sn system have not been known well because of their complexity. Because the growth of intermetallics at the interface affects reliability of solder joint, the intermetallics in Ni-Cu-Sn system should be identified, and their growth should be investigated. Therefore, in present study, interfacial reactions between electroless Ni UB7f and 95.5Sn-4.0Ag-0.5Cu alloy were investigated focusing on morphology of the IMCs, thermodynamics, and growth kinetics. The IMCs that appear during a reflow and an aging are different each other. In early stage of a reflow, ternary IMC whose composition is Ni$_{22}$Cu$_{29}$Sn$_{49}$ forms firstly. Due to the lack of Cu diffusion, Ni$_{34}$Cu$_{6}$Sn$_{60}$ phase begins growing in a further reflow. Finally, the Ni$_{22}$Cu$_{29}$Sn$_{49}$ IMC grows abnormally and spalls into the molten solder. The transition of the IMCs from Ni$_{22}$Cu$_{29}$Sn$_{49}$ to Ni$_{34}$Cu$_{6}$Sn$_{60}$ was observed at a specific temperature. From the measurement of activation energy of each IMC, growth kinetics was discussed. In contrast to the reflow, three kinds of IMCs (Ni$_{22}$Cu$_{29}$Sn$_{49}$, Ni$_{20}$Cu$_{28}$Au$_{5}$, and Ni$_{34}$Cu$_{6}$Sn$_{60}$) were observed in order during an aging. All of the IMCs were well attached on UBM. Au in the quaternary IMC, which originates from immersion Au plating, prevents abnormal growth and separation of the IMC. Growth of each IMC is very dependent to the aging temperature because of its high activation energy. Besides the IMCs at the interface, plate-like Ag3Sn IMC grows as solder bump size inside solder bump. The abnormally grown Ni$_{22}$Cu$_{29}$Sn$_{49}$ and Ag$_3$Sn IMCs can be origins of brittle failure.failure.

• Journal of Korean Ophthalmic Optics Society
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• v.14 no.1
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• pp.63-68
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• 2009

Purpose: TiN films were deposited on sus304 by unbalanced magnetron sputtering system which was designed and developed as unbalancing the strength of the magnets in the magnetron electrode. The effect of oxygen incorporation in the fabrication of deposited films was investigated. Methods: The cross sections of deposited films on Silicon wafer were observed by SEM to measure the thickness of the films, the components of the surface of the films were identified by XPS survey spectra, the compositional depth-profile of deposited films was examined by an XPS apparatus. Results: From the data of XPS depth profile of films, it could be seen that the element O as well as the elements Ti and N present in the surface of the film and the relative percentage of the element O was constant at 65 at.% with respect to the depth of film. Conclusions: The color change with thickness of the films had something to do with the change of Ti $ 2p_{3/2}$ peak intensity and shape mixed of $ TiO_2$, TiN, $ TiO_{x}N_{y}$ compound.

• Journal of Korean Ophthalmic Optics Society
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• v.14 no.1
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• pp.57-62
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• 2009

Purpose: TiN films were deposited on sus304 by unbalanced magnetron sputtering system which was designed and developed as unbalancing the strength of the magnets in the magnetron electrode. The color and hardness of deposited TiN films was investigated. Methods: The cross sections of deposited films on silicon wafer were observed by SEM to measure the thickness of the films, the components of the surface of the films were identified by XPS, the components of the inner parts of the films were observed by XPS depth profiling. XPS high resolution scans and curve fittings of deposited films were performed for quantitative chemical analysis, Vickers micro hardness measurements of deposited films were performed with a nano indenter equipment. Results: The colors of deposited films gradually changed from light gold to dark gold, light violet, and indigo color with increasing of the thickness. It could be seen that the color change come from the composite change of three compound,$TiO_{x}N_{y}$, $TiO_2$, TiN. Especially, the composite change of$TiO_{x}N_{y}$ compound was thought to affect the color change with respect to thickness. Conclusions: Deposited films had lower than the value of general TiN film in Vickers hardness, which was caused by mixing three TiN, $TiO_2$,$TiO_{x}N_{y}$ compound in the deposited films. The increasing and decreasing of micro hardness with respect to thickness was thought to have something to do with the composite of TiN in the films.

• Proceedings of the KWS Conference
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• 2006.10a
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• pp.205-206
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• 2006

The microstructural evolutions and shear properties of the pure Sn solder bumps with Ni UBMs were investigated during multiple reflows and high temperature storage(HTS) tests. Only a $Ni_3Sn_4$ IMC was found at the bump/Ni UBM interface after 1 reflow. The layer thickness of these IMCs increased with increasing reflow number and testing time. The solder bumps showed a good reliability during multiple reflows and HTS tests.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.09a
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• pp.183-199
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• 2002

Reliability.The reliability strongly depended on the CTE of underfill resin..The fractured portion was identical with the maximum plastic equivalent strain..1 % or less value of the maximum plastic equivalent strain certified more than 1000 cycle of TCT life. UFB.Bonding accuracy was confirmed within2$2{\mu}{\textrm}{m}$..The fundamental bondability of UFB was confirmed with no damage around aluminum pads. Some dislocations and vacancies were observed at the interface, however, the atomic level bonding was confirmed. CBB.Dry process was applied to UBM removal.

• Proceedings of the Korean Information Science Society Conference
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• 2001.10a
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• pp.106-108
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• 2001

기존의 관계형 데이터베이스 시스템은 기본적으로 count, max, min, sum, avg의 집계 함수(aggregate functions)를 제공하며, UBMS에 따라 다양한 집계 연산자를 추가로 지원한다. 시공간 데이터베이스는 기본적인 공간 정보뿐만 아니라 시간 흐름에 따른 이력 정보를 취급하므로 데이터베이스로부터 자유로운 이력(history) 정보의 검색 기능이 요구되고 있다. 따라서, 본 연구에서는 시공간 데이터베이스로부터 이력을 자동으로 검색할 수 있는 새로운 집계 연산자, ‘history’를 제안하고, 그 처리 알고리즘과 SQL3에서 탐색 질의 표현법을 제안한다. 결과적으로, 제안된 이력 집계 연산자는 향후 SQL3리 질의 표현 능력의 제고에 기여할 것이다.

• Proceedings of the Korea Information Processing Society Conference
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• 2008.05a
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• pp.139-140
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• 2008

문장 독립 화자 확인에서 SVM을 위한 적응된 GMM을 바탕으로 특징을 추출함으로써 GMM과 SVM 사이의 새로운 접근 방식을 제안한다. 우수한 측정성으로 인해, 적응된 GMM은 SVM 화자 확인을 위한 대규모의 음성 데이터로부터 적은 양의, 전형적인 특징 벡터를 추출해오곤 했다. 이 새로운 접근방식을 사용함으로써, 제안된 화자 확인 시스템은 기존의 GMM-UBM 시스템보다 훨씬 나은 성능을 보였다.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.49-56
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• 2012

Recently, by the trends of electronic package to be smaller, thinner and more integrative, fine bump is required. but It can result in the electrical short by reduced cross-section of UBM and diameter of bump. Especially, the formation of IMCs and KV can have a significant affects about electrical and mechanical properties. In this paper, we analyzed the thermal deformation of flip-chip bump by using FEM. Through Thermal Cycling Test (TCT) of flip-chip package, We analyzed the properties of the thermal deformation. and We confirmed that the thermal deformation of the bump can have a significant impact on the driving system. So we selected IMCs thickness and bump diameter as variable which is expected to have implications for characteristics of thermal deformation. and we performed analysis of temperature, thermal stress and thermal deformation. Then we investigated the cause of the IMC's effects.