• Journal of Radiation Protection and Research
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• 제19권1호
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• pp.13-22
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• 1994

CANDU 6 중수형 원자로 운전중에 Calandria Shell내에서 발생하는 $(n,\;{\gamma})$ 반응유발 열중성자속분포와 CANDU 6 발전소의 측면 및 하단 차폐구조에서의 방사선 선량률을 계산하기 위하여 몬테칼로 방법을 이용한 MCNP 4.2 코드를 사용하였다. 계산결과, Mainshell, Annular Plate와 Subshell내 의 열중성자속분포는 $10^{11}{\sim}10^{13}\;neutrons/cm^2-sec$로 나타났고, 이는 DOT 4.2 코드의 계산결과와 비교해 볼 때 약간 큰 값들의 분포를 보여주고 있다. 이 계산결과의 응용으로서 작업자 접근가능지역 (Worker Accessible Areas)에서의 감마선량률을 계산해본 결과 설계목표치인 $6{\mu}Sv/h$보다 낮은 값을 주는 것으로 나타났다. $(n,\;{\gamma})$ 반응유발 열중성자속분포에 대한 MCNP 4.2 코드의 계산결과는 CANDU 6형 원자로의 방사선 차폐해석에 중요한 자료로 널리 이용될 수 있을 것이다.

• Journal of Radiation Protection and Research
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• 제41권3호
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• pp.222-228
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• 2016

Background: We are developing a small size dosimeter for dose estimation in particle therapies. The developed dosimeter is an optical fiber based dosimeter mounting an radiation induced luminescence material, such as an OSL or a scintillator, at a tip. These materials generally suffer from the quenching effect under high LET particle irradiation. Materials and Methods: We fabricated two types of the small size dosimeters. They used an OSL material Eu:BaFBr and a BGO scintillator. Carbon ions were irradiated into the fabricated dosimeters at Heavy Ion Medical Accelerator in Chiba (HIMAC). The small size dosimeters were set behind the water equivalent acrylic phantom. Bragg peak was observed by changing the phantom thickness. An ion chamber was also placed near the small size dosimeters as a reference. Results and Discussion: Eu:BaFBr and BGO dosimeters showed a Bragg peak at the same thickness as the ion chamber. Under high LET particle irradiation, the response of the luminescence-based small size dosimeters deteriorated compared with that of the ion chamber due to the quenching effect. We confirmed the luminescence efficiency of Eu:BaFBr and BGO decrease with the LET. The reduction coefficient of luminescence efficiency was different between the BGO and the Eu:BaFBr. The LET can be determined from the luminescence ratio between Eu:BaFBr and BGO, and the dosimeter response can be corrected. Conclusion: We evaluated the LET dependence of the luminescence efficiency of the BGO and Eu:BaFBr as the quenching effect. We propose and discuss the correction of the quenching effect using the signal intensity ratio of the both materials. Although the correction precision is not sufficient, feasibility of the proposed correction method is proved through basic experiments.

• Child Health Nursing Research
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• 제8권3호
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• pp.302-312
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• 2002

This descriptive exploratory study was conducted to analyze the results of developmental screening test using DDST and the follow-up diagnostic evaluation in one public health center, and to evaluate the feasibility of developmental screening in nursing. Samples were 373 children under 6 years who visited the public health center. Mothers' satisfaction on the developmental clinic was also determined. Summaries of the results were as follows:v 1. 0.5% of children in height and 1.9% of children in weight were included in below 3 percentile of Korean children's growth chart, but none of them showed developmental delay. 2. The results of DDST showed 92.1% of subjects were classified as normal, 3.7% as abnormal, and 4.2% as questionable among 354 children. 3. Most of children who showed the abnormal development at the first DDST were confirmed having the developmental delay at the follow-up diagnostic evaluation. On the other hand, most of children who showed the questionable development at the first DDST revealed having the normal development in follow-up screening test. 4. The result of the DDST was influenced by the birth order of the subject and delivery type. 5.The mean satisfaction score by mothers on developmental clinic was 4.35 in 5 Likert scale. In conclusion, we could certain the feasibility and usefulness of developmental screening in community and child care nursing. To fulfil the increasing needs of mothers with infants on the child development, nurses have to provide anticipatory guidance and parent education in addition to the developmental screening test. We hope to expand the developmental screening in nursing field not only of clinical setting but also of community.

• 전자공학회논문지D
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• 제35D권3호
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• pp.39-45
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• 1998

SrBi$_{2}$Ta$_{2}$O$_{9}$ (SBT) ferroelectric thin films for nonvolatile memory were prepared on Pt/Ti/SiO$_{2}$/Si and RuO$_{2}$/SiO$_{2}$/Si substrates by RF magnetron sputtering. The dependences of crystalline and electrical properties on the lower electrode type(Pt and RuO$_{2}$) and the annealing temperatures were investigated. SBT films regardless of their electrode types showed typeical Bi layered peroviskite crystal structures. The crystalline quality of as-deposited SBT films was improved by the rapid thermal annealing at 650.deg. C for 30 sec. The remanetn polarization of 2Pr (Pr+-Pr-) of the annealed SBT films deposited on Pt/Ti/SiO$_{2}$/Si substrates were about 11 .mu.C/cm$^{2}$ and 3 .mu.C/cm$^{2}$, respectively. The leakage currents at 3 V bias voltage were about 0.8 .mu.A/cm$^{2}$ for SBT/ Pt/Ti/SiO$_{2}$/Si and about 1 .mu.A/cm$^{2}$ for SBT/RuO$_{2}$/SiO$_{2}$/Si sample. SBT films annealed at 650 .deg. C showed no degradation in Pr values after 10$^{11}$ polarization switching cycles, indicating good fatigue properties. In addition, for SBT samples deposited on Pt/Ti/SiO$_{2}$/Si, Pr values increased to more than that of initial state, suggesting the increament of leakage current caused by repeated polarization.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.144-144
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• 2008

Blue light emitting diode structures consisting of the InGaN/GaN multiple quantum wells were grown by metalorganic chemical vapor deposition at different growth temperatures for the p-GaN contact layers and the influence of growth temperature on the emission and microstructural properties was investigated. The I-V and electroluminescence measurements showed that the sample with a p-GaN layer grown at $1084^{\circ}C$ had a lower electrical turn-on voltage and series resistance, andenhanced output power despite the low photoluminescence intensity. Transmission electron microscopy (TEM) revealed that the intense electro luminescence was due to the formation of a p-GaN layer with an even distribution of Mg dopants, which was confirmed by TEM image contrast and strain evaluations. These results suggest that the growth temperature should be optimized carefully to ensurethe homogeneous distribution of Mg as well as the total Mg contents in the growth of the p-type layer.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.155-157
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• 2006

송전전압이 점차 초고압화되면서 절연체의 유전특성을 개선하여 송전용량을 향상시키고, 절연내력을 높여 케이블 외경을 저감시키려는 시도에 따라 우수한 유전특성 및 절연내력을 갖는 폴리머 절연층과 기계적 특성, 절연유와의 적합성이 우수한 크라프트지의 장점을 혼합시킨 반합성지가 개발되어 전력케이블의 주절연재료로 사용되고 있다. 본 논문은 LS전선이 국내최초로 개발한 400 kV급 반합성지 전력케이블 및 접속함 개발과정 및 이와 관련된 요소기술에 대해 기술하였다. 송전시스템에서 요구되는 유전특성의 반합성지를 설계 제작하여, 기존 크라프트 절연지 대비 유전손실은 50% 수준, 절연내력은 125%이상의 반합성지를 개발하였고, 반합성지 고유의 특성인 팽윤율을 조절하여 케이블을 제조하였다. 반합성지 절연 케이블에 필요한 접속함에서는 보강절연재로 케이블과 동일한 반합성지를 사용하여 전체적인 3기를 감소시키고, 열저항성을 줄이고자 노력하였다. 또한, 접속함 조립공정에 필요한 저온연공법을 개발하여 반합성지에 열적 스트레스를 최소화하였다. 상기 관련기술의 개발 결과로, IEC 60141, AEIC CS2-97 및 NGTS 3.5.1에 근거하여 400 kV급 반합성지 OF 케이블 및 접속함에 대해 국제 공인기관인 KEMA의부터 Type Test을 인증받았다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.121-122
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• 2006

Recently, poly-Si TFT-LCD starts to be mass produced using excimer laser annealing (ELA) poly-Si. The main reason for this is the good quality poly-Si and large area uniformity. We report the influence of channel length and width on poly-Si TITs performance. Transfer characteristics of n-channel poly-Si thin film transistors fabricated on polycrystalline silicon (poly-Si) thin film transistors (TFTs) with various channel lengths and widths of $2-30{\mu}m$ has been investigated. In this paper, we analyzed the data of n-type TFTs. We studied threshold voltage ($V_{TH}$), on/off current ratio ($I_{ON}/I_{OFF}$), saturation current (I_{DSAT}$), and transconductance ($g_m$) of n-channel poly-Si thin film transistors with various channel lengths and widths.

• KSBB Journal
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• 제5권2호
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• pp.141-149
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• 1990

Aspergillus niger유래의 $\beta$-glucosidase를 (1)glutarald-ehyde를 가교제로 한 chitin과 chitosan담체에 covalent linkage (2)Amberite IRA93과 DEAE-cellulose담체에 succinylation시킨 후 흡착, 그리고 (3)alginarte, polyacry-lamide를 각종 가교제를 이용 entrapment등의 방법으로 고정화 하였다. Glutaraldehyde를 가교제로써 chitosan을 활성화시킨후 $\beta$-glucosidase를 고정화 시켰을때 효소활성 회수율이 31.5%로 가장 높았고, 또한 column형 반응기에서의 15일 경과 후 효소활성 유지도도 69%로서 가장 우수하였다. 또한 succinylation시킨 효소를 Amberite IRA93 담체에 흡착시켰을 때 효소활성 회수율은 24.7%였고 효소 활성유지도는 62%였다. 반면에 entra-pment 방법에 의한 $\beta$-glucosidase의 고정화는 효소의 계속적인 용출로 $\beta$-glucosidase의 고정화에는 적합하지 않았다. Chitosan담체에서의 고정화 최적조건을 조사한 결과 가교제인 glutaraldehyde의 최적농도는 0.4%였고, glutaraldehyde의 최적 반응 pH는 4.8이었다. 또한 column형 반응기를 이용하여 cellobiose로부터 glucose로의 전환율을 조사하여 고정화 효소의 효용성을 검토하였다.

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.340-344
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• 2011

Thermoelectric bismuth telluride ($Bi_2Te_3$) films were deposited on $4^{\circ}$ off oriented (001) GaAs substrates using a modified metal organic chemical vapor deposition (MOCVD) system. The effects of substrate temperature on surface morphologies, crystallinity, electrical properties and thermoelctric properties were investigated. Two dimensional growth mode (2D) was observed at substrate temperature lower than $400^{\circ}C$. However, three dimensional growth mode (3D) was observed at substrate temperature higher than $400^{\circ}C$. Change of growth mechanism from 2D to 3D was confirmed with environmental scanning electron microscope (E-SEM) and X-ray diffraction analysis. Seebeck coefficients of all samples have negative values. This result indicates that $Bi_2Te_3$ films grown by modified MOCVD are n-type. The maximum value of Seebeck coefficient was -225 ${\mu}V/K$ and the power factor was $1.86{\times}10^{-3}\;W/mK^2$ at the substrate temperature of $400^{\circ}C$. $Bi_2Te_3$ films deposited using modified MOCVD can be used to fabricate high-performance thermoelectric devices.

• 한국전산구조공학회논문집
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• 제21권5호
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• pp.429-437
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• 2008

본 논문에서는 비선형 정적해석 및 동적해석을 이용하여 가새골조의 연쇄붕괴 저항능력을 평가하였다. 모두 아홉 개의 서로 다른 가새 형태를 고려하였으며, 모멘트골조의 해석 결과와 비교하였다 비탄성 정적해석 결과에 따르면 현행 기준에 따라 설계된 저층 가새골조는 1층 중앙에 위치한 기둥이 제거될 경우 연쇄붕괴 저항성능 기준을 만족하는 것으로 나타났으나 대부분 취성적인 파괴모드를 나타내었다. 특히 압축가새가 좌굴한 후 인장가새가 인장력을 발휘하기 전에 취약한 층의 기둥이 좌굴하는 것으로 나타냈다. Inverted-V형 가새골조의 경우가 가장 연성도 면에서 우수한 것으로 나타났다. 동적 해석 결과에 따르면 모든 가새골조는 중앙에 위치한 기둥이 제거될 경우 붕괴되지 않으며, 동일한 규모의 모멘트 저항골조에 비해 진동이나 처짐량이 작은 것으로 나타났다.