• Journal of Radiation Protection and Research
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• v.21 no.3
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• pp.175-182
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• 1996

The lifetime fatal radiation-induced cancer for Korean has been estimated for both single and continuous radiation exposure using the BEIR V method. In case of single exposure, the major radiation-induced cancer type for young and old age is digestive and respiratory cancer, respectively. For the whole population of Korean, the major radiation-induced cancer type is digestive cancer. In case of 1mGy/yr continuous exposure from birth to death, the contribution of total radiation-induced cancer mortality to natural cancer mortality is about 3%.

• Journal of the Korean Mathematical Society
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• v.41 no.5
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• pp.773-793
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• 2004

We consider a system of particles with locations { $X_{i}$ $^{n}$ (t):t$\geq$0,i＝1,…,n} in $R^{d}$ , time-varying weights { $A_{i}$ $^{n}$ (t) : t $\geq$0,i ＝ 1,…,n} and weighted empirical measure processes $V^{n}$ (t)＝1/n$\Sigma$$_{i=1}$$^{n}$ $A_{i}$ $^{n}$ (t)$\delta$ $X_{i}$ $^{n}$ (t), where $\delta$$_{x}$ is the Dirac measure. It is known that there exists the limit of { $V_{n}$ } in the week* topology on M( $R^{d}$ ) under suitable conditions. If { $X_{i}$ $^{n}$ , $A_{i}$ $^{n}$ , $V^{n}$ } satisfies some diffusion equations, applying Ito formula, we prove a central limit type theorem for the empirical process { $V^{n}$ }, i.e., we consider the convergence of the processes η$_{t}$ $^{n}$ ≡ n( $V^{n}$ -V). Besides, we study a characterization of its limit.t.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.11-20
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• 2008

The structure of 2-bit/cell flash memory device was characterized for sub-50 nm non-volatile memory (NVM) technology. The memory cell has spacer-type storage nodes on both sidewalls in a recessed channel region, and is erased (or programmed) by using band-to-band tunneling hot-hole injection (or channel hot-electron injection). It was shown that counter channel doping near the bottom of the recessed channel is very important and can improve the $V_{th}$ margin for 2-bit/cell operation by ${\sim}2.5$ times. By controlling doping profiles of the channel doping and the counter channel doping in the recessed channel region, we could obtain the $V_{th}$ margin more than ${\sim}1.5V$. For a bit-programmed cell, reasonable bit-erasing characteristics were shown with the bias and stress pulse time condition for 2-bit/cell operation. The length effect of the spacer-type storage node is also characterized. Device which has the charge storage length of 40 nm shown better ${\Delta}V_{th}$ and $V_{th}$ margin for 2-bit/cell than those of the device with the length of 84 nm at a fixed recess depth of 100 nm. It was shown that peak of trapped charge density was observed near ${\sim}10nm$ below the source/drain junction.

• BMB Reports
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• v.40 no.3
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• pp.432-438
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• 2007

V(D)J recombination, a site-specific gene rearrangement process occurring during the lymphocyte development, begins with DNA double strand breaks by two recombination activating gene products (RAG1/2) and finishes with the repair process by several proteins including DNA-dependent protein kinase (DNA-PK). In this report, we found that RAG2 was specifically phosphorylated by DNA-PK at the $365^{th}$ serine residue, and this phosphorylated RAG2 affected the V(D)J recombination activity in cells in the GFP expression-based assay. While the V(D)J recombination activity between wild-type RAG2 and mutant S365A RAG2 in the assay using a signal joint substrate was undistinguishable in DNA-PK deficient cells (M059J), the activity with wild-type RAG2 was largely increased in DNA-PK proficient cells (M059K) in comparison with mutant RAG2, suggesting that RAG2 phosphorylation by DNA-PK plays a crucial role in the signal joint formation during V(D)J recombination.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.57 no.3
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• pp.275-278
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• 2008

It has been issued that the necessity of Live line work for 765kV vertical double circuit six bundle conductors transmission line when the characteristics of transmission line, the composition of T/L and near the T/L circumstances etc. Others are considered. The Barehand method of UHV T/L is extremely dangerous work and especially it is directly related with lineman life so it is very dangerous. It should be performed several technology developments for live-line work on the UHV T/L, that should be considered such as the electrical influence on workers near the T/L, development of live-line facilities, guarantee of safety, the technical rules of live-line work, the safe method of live-line work and etc. In order to maintain the 765kV transmission lines safely by barehand work, first of all, we should know the analysis of electrical safety level test in live-line work at 765kV vertical double circuit six bundle conductors on the suspension string tower type.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.175-176
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• 2000

Electric fields and the wall voltages in a surface-type AC PDP cell were measured using a Laser Induced Fluorescence Spectroscopy. For the condition of He 100Torr, 200V sustain voltage and 50kHz sustain frequency, the wall voltage dropped from about 50V to about -75V within $1{\mu}sec$ after the main discharge. And the wall voltage decreased with the rate of $10.8V/{\mu}sec$ due to the accumulation of the space charges after $1{\mu}sec$. But when the operating pressure was 40Torr, it increased with the rate of $4.5V/{\mu}sec$ because the diffusion effect of the wall charge on MgO surface was more dominant than the accumulation effect of the space charges. During the pulse-off period, the wall voltage decreased slightly due to the diffusion of the wall charge. When the sustain voltage was 250V, the self-erasing discharge occurred, and the absolute value of the wall voltage decreased rapidly just after the pulses were off, which was caused by the accumulation of the charges generated by the self-erasing discharge.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.2
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• pp.315-320
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• 2001

This paper describes a rotation-type field mill to measure the electric field intensity caused by thunderclouds on the ground level. The field mill developed is consisted of two isolated electrode vanes, a grounded stator and a rotor. To develop a high sensitive field mill, the principles and design rules of a rotation-type field mill are studied. Also, two types of calibration system, such as a cylindrical guard electrodes and a parallel-plate electrodes, are proposed to determine the sensitivity and frequency bandwidth of the field mill. From the calibration experiment, the frequency bandwidth and the sensitivity of the field mill are DC ~ 200 [Hz] and 0.267 [mV/V/m], respectively. Therefore, it can measure the electric field intensity from 73 [V/m] to 18.7 [㎸/m].

• Proceedings of the Korean Society of Coastal and Ocean Engineers Conference
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• 2006.09a
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• pp.73-76
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• 2006

• Proceedings of the Korean Nuclear Society Conference
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• 2001.05a
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• pp.517.1-517
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• 2001

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1341-1343
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• 1995

The maximum transmission voltage in our country is going to change 345kV into 765kV owing to the increase of Electrical Power Demand and power System Stability. Our company is developing 800kV GIS and 765kV Transformer which are main equipments in 765kV substation. This paper describs the specification on 800kV GIS which we prepared for 800kV 8,000A 50kA GIS development. This specification is supported by Public Standards and Data. And, we are designing the 800kV GIS on this specification and drawing up the 800kV GIS layout for type test.