• Journal of Microbiology and Biotechnology
• /
• v.22 no.8
• /
• pp.1107-1112
• /
• 2012

Outbreaks of foodborne diseases associated with Vibrio species such as V. parahaemolyticus, V. vulnificus, and V. cholerae frequently occur in countries having a dietary habit of raw seafood consumption. For rapid identification of different Vibrio species involved in foodborne diseases, whole-cell protein pattern analysis for 13 type strains of 12 Vibrio species was performed using SDS-PAGE analysis. Pathogenic Vibrio species such as V. parahaemolyticus, V. vulnificus, V. cholerae, V. alginolyticus, V. fluvialis, and V. mimicus were included in the 12 Vibrio species used in this study. Each of the 12 Vibrio species showed clearly specific band patterns of its own. Two different strains of V. parahaemolyticus showed two different SDS-PAGE whole-cell protein patterns, giving the possibility of categorizing isolated strains in the same V. parahaemolyticus species into two subgroups. The 36 Vibrio isolates collected from sushi restaurants in Busan were all identified as V. parahaemolyticus by comparing their protein patterns with those of Vibrio type strains. The identified isolates were categorized into two different subgroups of V. parahaemolyticus. The whole-cell protein pattern analysis by SDS-PAGE can be used as a specific, rapid, and simple identification method for Vibrio spp. involved in foodborne diseases at the subspecies level.

• Journal of Korean Society for Atmospheric Environment
• /
• v.20 no.4
• /
• pp.451-463
• /
• 2004

The performance of disk-type catalytic filters impregnated by TiO$_2$ or TiO$_2$-3Al$_2$O$_3$ㆍ 2SiO$_2$ supports and V$_2$O$_{5}$ catalyst was evaluated for selective catalytic reduction (SCR) of NO with ammonia as a reductant. XRD, FT -IR, BET and SEM were used to characterize the catalytic filters prepared in this work. Optimal V$_2$O$_{5}$ loading and reaction temperature for V$_2$O$_{5}$/TiO$_2$ catalytic filters were 3-6 wt.% and 350-40$0^{\circ}C$ at GHSV 14,300 $hr^{-1}$ in the presence of oxygen, respectively. With increasing the V$_2$O$_{5}$ loading from 0.5 to 6 wt%, NO conversion increased from 24 to 96% at 40$0^{\circ}C$ and 14.300$hr^{-1}$, and maintained at 80% over in the V$_2$O$_{5}$ loading range of 3-6 wt.% and then dropped at V$_2$O$_{5}$ loading of 7wt.% over. In comparing V$_2$O$_{5}$/ TiO$_2$ and V$_2$O$_{5}$/ TiO$_2$-3Al$_2$O$_3$ㆍ2SiO$_2$ catalytic fillers, which have same 3wt.% V$_2$O$_{5}$ loading, the V$_2$O$_{5}$/ TiO$_2$-3A1$_2$O$_3$ㆍ2SiO$_2$ catalytic filter showed higher activity than V$_2$O$_{5}$/ TiO$_2$ catalytic filter, but higher differential pressure drops owing to its low air permeability. low air permeability.

• Journal of IKEEE
• /
• v.11 no.1 s.20
• /
• pp.54-60
• /
• 2007

In this study novel ESD protection device, namely, N/P-type Low Voltage Triggered SCR, has been proposed, for high speed I/O interface. Proposed device could lower high trigger voltage($\sim$20V) of conventional SCR and reduce latch-up phenomenon of protection device during the normal condition. In this Study, the proposed NPLVTSCR has been simulated using TMA MEDICI device simulator for electrical characteristic. Also the proposed device's test pattern was fabricated using 90nm TSMC's CMOS process and was measured electrical characteristic and robustness. In the result, NPLVTSCR has 3.2V $\sim$ 7.5V trigger voltage and 2.3V $\sim$ 3.2V holding voltage by changing PMOS gate length and it has about 2kV, 7.5A HBM ESD robustness(IEC61000-4-2).

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.15 no.8
• /
• pp.5213-5218
• /
• 2014

Organic memory devices were made using the plasma polymerization method. The memory device consisted of ppMMA(plasma polymerization MMA) thin films as the tunneling and insulating layer, and a Au thin film as the memory layer, which was deposited by thermal evaporation. The organic memory operation theory was developed according to the charging and discharging characteristics of floating gate type memory, which would be measured by the hysteresis voltage and memory voltage with the gate voltage values. The I-V characteristics of the fabricated memory device showed a hysteresis voltage of 26 [V] at 60 ~ -60 [V] double sweep measuring conditions. The programming voltage was applied to the gate electrode in accordance with the result of this theory. A programming voltage of 60[V] equated to a memory voltage of 13[V], and 80[V] equated to a memory voltage of 18[V]. The memory voltage of approximately 40 [%]increased with increasing programming voltage. The charge memory layer charging or discharging according to the theory of the memory was verified experimentally.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.15 no.6
• /
• pp.231-238
• /
• 2015

In this paper, we have studied a sheet resistance property of N- and P-type thin films deposited on ITO glass by use of RF magnetron sputtering. The N-type samples which has the deposition condition of 150W RF power, shows the highest current value, and the samples deposited for 15 minutes shows a better Ohmic contact property. As the substrate temperature, RF power and deposition time are increased, the sheet resistance of the samples is increased, and the low sheet resistance sample shows a better I-V property. The P-type samples shows the highest current value by 150W RF power condition as similar as N-type samples. and the samples deposited for 20 minutes shows a better ohmic contact property. The sheet resistance of the both types samples is increased as increasing RF power and deposition time.

• The Journal of Korean Academy of Prosthodontics
• /
• v.8 no.1
• /
• pp.30-36
• /
• 1968

The measurements on the various items, such as arch form, kinds of anterior dental arch, degree of curvature in anterior dental arches, relationship between direction of the disto-incisal edge of the canine and first premolar, and kinds of posterior dental arch in upper dental arches were studied on 311 cases of the Korean adults aged from 20 to 30years. The results were as follows. 1. The commonest type of the upper dental arches was U-type (53.7%), the remaining were O-type (25.4%) and V-type (20.0%). 2. A slight curvature type (71.87%) prevailed against angulated curvature type in upper anterior dental arches. 3. The degree of curvature from $121^{\circ}$ to $160^{\circ}$ in anterior dental arches was common, and the degree of curve of 1-type with on curvature was smaller than 4, 5 type with two curvature. 4. The direction of the disto-incisal edge of canine went between the tip of the buccal cusp and the lingual incline of the buccal cusp of the first premolar in most dental arches and went lingual incline of the buccal cusp of the first premolar in U-type, from buccal cusp to lingual cusp of the first premolar in O-type and were distributed from buccal edge to central groove of the first premolar in V-type. 5. A posterior dental arch with almost straight curvature was common in 60.87%, and 4-type with a half rounded curve from first premolar to second molar was next.

• Journal of the Korean housing association
• /
• v.21 no.5
• /
• pp.35-42
• /
• 2010

This study examines and analyzes plan of Hanok which has been newly built at rural areas in Jeollanam-do province and is to present the direction in setting architectural plan of Hanok at rural areas. For the purpose of this study, analyzed the types of Hanok based on the topological characteristics of main house and main spaces including room, living room and kitchen. Five types of 105 Hanoks, type-I, type-II, type-III, type-IV and type-V were drawn on the based of the shape of main house and topological characteristics of main rooms including room, living room and kitchen. Type-I had spatial composition of main rooms in a row and showed similar shape of main house with traditional private houses in Honam region, type-II showed placement of living room in center and main rooms beside it, type-III showed change of type-II and placed kitchen and annex behind living room and similar plan composition with type-III and secured the area of living room and rooms by enlarging the number of rooms, and type-V had the shape of main house with twisted form and placed living room in the center and each room at side or twisted part to ensure openness of living room.

• Bulletin of the Korean Chemical Society
• /
• v.13 no.1
• /
• pp.11-17
• /
• 1992

Vibration-to-vibration energy transfer probabilities for $HF(v=n)+H_2(v=0){\to}HF(v=n-1)+H_2(v=1)$ and $DF(v=n)+D_2(v=0){\to}DF(v=n-1)+D_2(v=1)$ including both the vibration-to-vibration and translation (V-V, T) and vibration-to-vibration and rotation (V-V, R) energy transfer paths have been calculated semiclassically using a simplified collision model and Morse-type intermolecular interaction potential. The calculated results are in reasonably good agreement with those obtained by experimental studies. They also show that the transition processes for $HF(v=1-3)+H_2(v=0){\to}HF(v=0-2)+H_2(v=1)$ and $DF(v=1,\;4)+D_2(v=0){\to}DF(v=0,\;3)+D_2(v=1)$ are strongly dependent on the V-V, T path at low temperature but occur predominantly via the V-V, R path with rising temperature. The vibration-to-vibration energy transfer for $HF(v=4)+H_2(v=0){\to}HF(v=3)+H_2(v=1)$ and $DF(v=2-3)+D_2(v=0){\to}DF(v=1-2)+D_2(v=1)$ occur predominantly via V-V, R path and V-V, T path through whole temperatures, respectively.

• Journal of the Korean Electrochemical Society
• /
• v.7 no.1
• /
• pp.26-31
• /
• 2004

The direct electrochemical studies of four laccases (plant and fungal laccases) have been investigated on a gold electrode functionalized with a new tether of 2.2'-dithiosalicylic aldehyde. Results from these studies indicate that the redox potential of the active site of plant laccase from Rhus vernificera is shifted to a more negative value(255 mV versus SCE) than that of fungal laccase from Pyricularia oryzae (480 mV versus SCE). Mechanistic studies indicate that the reduction of type-1 Cu precedes the reduction of type-2 and type-3 Cu ions when the electrode is poised initially at different potentials. Also a new tether, 2.2'-dithiosalicylic aldehyde, has been used to study the redox properties of two laccases (LCCI and Lccla) covalently attached to a gold electrode. An irreversible peak at 0.47V vs. SCE is observed in the cyclic voltammorams of LCCI. In contrast, the cyclic voltammograms of LCCIa contain a quasi-reversible peak at 0.18V vs. SCE and an irreversible peak at 0.50V vs. SCE. We find that the replacement of the eleven amino acids a the C-terminus with a single cysteine residue $(i.e., \;LCCI{\rightarrow}LCCIa)$ influences the rate of heterogeneous electron transfer between an electrode and the copper containing active sites $(K_{het}\;for\;LCCI=1.0\times10^{-2}\;s^{-1}\;and\;K_{het}\;for\;LCCI_a= 1.0\;times10^{-1}\;s^{-1}\'at\;0.18V\;versus\;SCE\;and\;4.0\times10^{-2}\;s^{-1}\;at\;0.50V\; versus\;SCE)$. These results show for the first time that the change of the primary structure of a protein via site-directed mutagenesis influences both the redox potentials of the copper ions in the active site and the rate of heterogeneous electron transfer.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.51 no.6
• /
• pp.229-235
• /
• 2002

This paper presents the fabrication of polycrystalline thin film transistor(TFT) using sequential lateral solidification(SLS) of amorphous silicon. The fabricated SLS TFT showed high Performance suitable for active matrix liquid crystal display(AMLCD). The SLS process involves (1) a complete melting of selected area via irradiation through a patterned mask, and (2) a precisely controlled pulse translation of the sample with respect to the mask over a distance shorter than the super lateral growth(SLG) distance so that lateral growth extended over a number of iterative steps. The SLS experiment was performed with 550$\AA$ a-Si using 308nm XeCl laser having $2\mu\textrm{m}$ width. Irradiated laser energy density is 310mJ/$\textrm{cm}^2$ and pulse duration time was 25ns. The translation distance was 0.6$\mu$m/pulse, 0.8$\mu$m/pulse respectively. As a result, a directly solidified grain was obtained. Thin film transistors (TFTs) were fabricated on the poly-Si film made by SLS process. The characteristics of fabricated SLS p -type poly-Si TFT device with 2$\mu\textrm{m}$ channel width and 2$\mu\textrm{m}$ channel length showed the mobility of 115.5$\textrm{cm}^2$/V.s, the threshold voltage of -1.78V, subthreshold slope of 0.29V/dec, $I_{off}$ current of 7$\times$10$^{-l4}$A at $V_{DS}$ =-0.1V and $I_{on}$ / $I_{off}$ ratio of 2.4$\times$10$^{7}$ at $V_{DS}$ =-0.1V. As a result, SLS TFT showed superior characteristics to conventional poly-Si TFTs with identical geometry.y.y.y.