• Journal of Oriental Neuropsychiatry
• /
• v.25 no.1
• /
• pp.39-46
• /
• 2014

Objectives: The objective of this study is to investigate the effects of Breath-Counting Meditation according to Personal Characteristics through the changes of Vital Signs (V/S) and Heart Rate Variability (HRV). Methods: 41 adults were classified according to gender and A-type behavior, then each group was compared for the changes on V/S and HRV through Breath-Counting Meditation of 10 minutes. Results: 1) Systolic and diastolic blood pressure were both significantly decreased in females, and the respiration level decreased significantly in both the male and female groups. 2) Respiration level decreased significantly in both the A-type and Non-A-type groups. 3) LF decreased significantly in both the male and female groups. HF increased significantly in both the male and female groups. 4) TP, LF and LF/HF increased significantly and HF decreased significantly in the Non-A-type group. Conclusions: Breath-Counting Meditation has respiratory effects for all groups and HRV of male, female and Non-A-type groups.

• Journal of Power Electronics
• /
• v.15 no.5
• /
• pp.1380-1391
• /
• 2015

This paper provides a loss analysis and comparison of high power semiconductor devices in 5MW Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) Wind Turbine Systems (WTSs). High power semiconductor devices of the press-pack type IGCT, module type IGBT, press-pack type IGBT, and press-pack type IEGT of both 4.5kV and 6.5kV are considered in this paper. Benchmarking is performed based on the back-to-back type 3-level Neutral Point Clamped Voltage Source Converters (3L-NPC VSCs) supplied from a grid voltage of 4160V. The feasible number of semiconductor devices in parallel is designed through a loss analysis considering both the conduction and switching losses under the operating conditions of 5MW PMSG wind turbines, particularly for application in offshore wind farms. This paper investigates the loss analysis and thermal performance of 5MW 3L-NPC wind power inverters under the operating conditions of various power factors. The loss analysis and thermal analysis are confirmed through PLECS Blockset simulations with Matlab Simulink. The comparison results show that the press-pack type IGCT has the highest efficiency including the snubber loss factor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.319-320
• /
• 2009

In this study, high-quality Al-N doped p-type ZnO thin films were deposited on n-type Si (100) wafer or Si coated with buffer layer by DC magnetron sputtering in the mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin film showed higher carrier concentration $2.93\times10^{17}cm^{-3}$, lower resistivity of $5.349\;{\Omega}cm$ and mobility of $3.99\;cm^2V^{-1}S^{-1}$, respectively. According to PL spectrum, the Al donor energy level depth ($E_d$) of Al-N codoped p-type ZnO film was reduced to about 51 meV, and the N acceptor energy level depth ($E_a$) was reduced to 63 meV, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.10
• /
• pp.831-837
• /
• 2002

Scaled SONOS transistors have been fabricated by 0.35$\mu\textrm{m}$ CMOS standard logic process. The thickness of stacked ONO(blocking oxide, memory nitride, tunnel oxide) gate insulators measured by TEM are 2.5 nm, 4.0 nm and 2.4 nm, respectively. The SONOS memories have shown low programming voltages of ${\pm}$8.5 V and long-term retention of 10-year Even after 2 ${\times}$ 10$\^$5/ program/erase cycles, the leakage current of unselected transistor in the erased state was low enough that there was no error in read operation and we could distinguish the programmed state from the erased states precisely The tight distribution of the threshold voltages in the programmed and the erased states could remove complex verifying process caused by over-erase in floating gate flash memory, which is one of the main advantages of the charge-trap type devices. A single power supply operation of 3 V and a high endurance of 1${\times}$10$\^$6/ cycles can be realized by the programming method for a flash-erased type EEPROM.

• Journal of the Korean Society of Fisheries and Ocean Technology
• /
• v.50 no.2
• /
• pp.185-192
• /
• 2014

The main object of this study was to investigate the collection characteristics of wet-type cyclone with wall cavity. The experiment was executed to analyze the characteristics of pressure drop and collection efficiency for the present system with the experimental parameters such as water spray, water spray type, inlet velocity etc. In results, for the present system of wet-type, the pressure drop represented 35 mm $H_2O$, while in dry-type 33 mm $H_2O$ showing lower 6% at $v_{in}=21m/s$. In case of $v_{in}=21m/s$ and water spray 200 mL/min, the collection efficiency of the present system became significantly higher as 96.8% comparing to that of the conventional wet-type scrubber. Additionally, for 200 mL/min, $SO_2$ removal efficiencies decreased with the increment of inlet velocity representing 75.0, 62.5, 50.0%, at $v_{in}=6,9,12m/s$, respectively.

• Journal of the Korean Vacuum Society
• /
• v.22 no.6
• /
• pp.327-334
• /
• 2013

Long-wave infrared detectors using the type-II InAs/GaSb strained superlattice (T2SL) material system with the nBn structure were designed and fabricated. The band gap energy of the T2SL material was calculated as a function of the thickness of the InAs and GaSb layers by the Kronig-Penney model. Growth of the barrier material ($Al_{0.2}Ga_{0.8}Sb$) incorporated Te doping to reduce the dark current. The full width at half maximum (FWHM) of the $1^{st}$ satellite superlattice peak from the X-ray diffraction was around 45 arcsec. The cutoff wavelength of the fabricated device was ${\sim}10.2{\mu}m$ (0.12 eV) at 80 K while under an applied bias of -1.4 V. The measured activation energy of the device was ~0.128 eV. The dark current density was shown to be $1.0{\times}10^{-2}A/cm^2$ at 80 K and with a bias -1.5 V. The responsivity was 0.58 A/W at $7.5{\mu}m$ at 80 K and with a bias of -1.5 V.

• The Bulletin of The Korean Astronomical Society
• /
• v.38 no.2
• /
• pp.72.2-72.2
• /
• 2013

We present a UBVI and $H{\alpha}$ photometric study of the young open cluster NGC 1893 in the outer Galaxy as part of "Sejong Open cluster Survey (SOS)" project. Using the properties of early-type stars in the photometric diagrams 65 early-type members were selected. More than 120 $H{\alpha}$ emission stars and candidates were found by $H{\alpha}$ photometry. Together with the published young stellar object catalogue and X-ray source list for this cluster, a total of 837 pre-main sequence (PMS) stars were identified in our photometric data. We obtained the mean reddening of < E(B-V) > = $0.56{\pm}0.08$ mag from the (U-B, B-V) diagram and confirmed the normal reddening law ($R_V=3.1$) toward NGC 1893 based on color excess ratios from optical to mid-infrared wavelengths. The zero-age main sequence fitting to the reddening-corrected color-magnitude diagrams gives a distance modulus of $V_0-M_V=12.8{\pm}0.1$. The age of the cluster inferred from stellar evolution models is about 1-2 Myr. We also found the Salpeter/Kroupa type initial mass function for this cluster. Finally, the mass accretion rate of 80 PMS stars with UV excess emission was estimated for the stars with masses from $0.6M_{\odot}$ to $5M_{\odot}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.3
• /
• pp.276-283
• /
• 2005

Magnetic tunneling transistor (MTT) device using the amorphous n-type Si semiconductor film for base and collector consisting of the [CoFe/NiFe](free layer) and Si(top layer) multilayers was used to study the spin-dependent hot electron magnetocurrent (MC) and tunneling magnetoresistance (TMR) at room temperature. A large MC of 40.2 % was observed at the emitter-base bias voltage ( $V_{EB}$ ) of 0.62 V. The increasing emitter hot current and transfer ratio ( $I_{C}$/ $I_{E}$) as $V_{EB}$ are mainly due to a rapid increase of the number of conduction band states in the Si collector. However, above the $V_{EB}$ of 0.62 V, the rapid decrease of MC was observed in amorphous Si-based MTT because of hot electron spin-dependent elastic scattering across CoFe/Si interfaces.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.09a
• /
• pp.52-59
• /
• 2001

The photoluminescence and the photo-current from p-type GaN films were investigated on both room- and low-temperatures for various Mg doping concentrations. At a low Mg doping level, there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the VGa and for an acceptor of MgGa. The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photo-current signal of 3.02-3.31 eV. At a high Mg doping level, there is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band. This center is attributed to the defect structures of MgGa-VN for the deep donor and MgGa for the acceptor. For low. doped samples, thermal annealing provides an additional photo-current signal for an unoccupied deep acceptor levels of 0.87-1.35 eV above valence band, indicating the p-type activation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.1
• /
• pp.75-80
• /
• 2006

We have fabricated a carbon nanotube field emission display(CNT-FED) panel with a 2 inch diagonal size using a screen printing method and in-situ vacuum sealing technology. The field emission properties of CNT FED panel with square-type CNT emitters. As results, the square-characterized and compared with those of the line-type CNT emitters. As results, the square-type CNT emitters showed much larger emission current and more stable I-V characteristics. Light emission started to be occurred at an electric field of 3.5 V/${\mu}m$ corresponding to the anode-cathode voltage of 700 V. The vacuum level inside of the in-situ vacuum sealed panel was obtained with $1.4 {\times} 10^{-5}$ torr. The sealed panel showed the similar I-V characteristics with the unsealed one and the uniform light emission with very high brightness at a current density of $243 {\mu}A/ cm^2$ obtained by the electric field of 10 V/${\mu}m$.