• Title/Summary/Keyword: Two-step etch

Search Result 44, Processing Time 0.022 seconds

A Via-Hole Process for GaAs MMIC's using Two-Step Dry Etching (2단계 건식식각에 의한 GaAs Via-Hole 형성 공정)

  • 정문식;김흥락;이지은;김범만;강봉구
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.30A no.1
    • /
    • pp.16-22
    • /
    • 1993
  • A via-hole process for reproducible and reliable GaAs MMIC fabrication is described. The via-hole etching process consists of two step dry etching. During the first etching step a BC $I_{3}$/C $I_{2}$/Ar gas mixure is used to achieve high etch rate and small lateral etching. In the second etching step. CC $L_{2}$ $F_{2}$ gas is used to achieve selective etching of the GaAs substrate with respect to the front side metal layer. Via holes are formed from the backside of a 100$\mu$m thick GaAs substrate that has been evaporated initially with 500.angs. thick chromium and subsequently a 2000.angs. thick gold layer. The fabricated via holes are electroplated with gold (~20$\mu$m thick) to form via connections. The results show that established via-hole process is satisfactory for GaAs MMIC fabrication.

  • PDF

Effect of different air-drying time on the microleakage of single-step self-etch adhesives

  • Moosavi, Horieh;Forghani, Maryam;Managhebi, Esmatsadat
    • Restorative Dentistry and Endodontics
    • /
    • v.38 no.2
    • /
    • pp.73-78
    • /
    • 2013
  • Objectives: This study evaluated the effect of three different air-drying times on microleakage of three self-etch adhesive systems. Materials and Methods: Class I cavities were prepared for 108 extracted sound human premolars. The teeth were divided into three main groups based on three different adhesives: Opti Bond All in One (OBAO), Clearfil $S^3$ Bond (CSB), Bond Force (BF). Each main group divided into three subgroups regarding the air-drying time: without application of air stream, following the manufacturer's instruction, for 10 sec more than manufacturer's instruction. After completion of restorations, specimens were thermocycled and then connected to a fluid filtration system to evaluate microleakage. The data were statistically analyzed using two-way ANOVA and Tukey-test (${\alpha}$ = 0.05). Results: The microleakage of all adhesives decreased when the air-drying time increased from 0 sec to manufacturer's instruction (p < 0.001). The microleakage of BF reached its lowest values after increasing the drying time to 10 sec more than the manufacturer's instruction (p < 0.001). Microleakage of OBAO and CSB was significantly lower compared to BF in all three drying time (p < 0.001). Conclusions: Increasing in air-drying time of adhesive layer in one-step selfetch adhesives caused reduction of microleakage, but the amount of this reduction may be dependent on the adhesive components of self-etch adhesives.

ENAMEL ADHESION OF LIGHT-AND CHEMICAL-CURED COMPOSITES COUPLED BY TWO STEP SELF-ETCH ADHESIVES (2단계 자가 산부식 접착제와 결합된 광중합과 화학중합 복합레진의 법랑질 접착)

  • Han, Sae-Hee;Kim, Eun-Soung;Cho, Young-Gon
    • Restorative Dentistry and Endodontics
    • /
    • v.32 no.3
    • /
    • pp.169-179
    • /
    • 2007
  • This study was to compare the microshear bond strength $({\mu}SBS)$ of light- and chemically cured composites to enamel coupled with four 2-step self-etch adhesives and also to evaluate the incompatibility between 2-step self-etch adhesives and chemically cured composite resin. Crown segments of extracted human molars were cut mesiodistally, and a 1 mm thickness of specimen was made. They were assigned to four groups by adhesives used: SE group (Clearfil SE Bond) AdheSE group (AdheSE), Tyrian group (Tyrian SPE/One-Step Plus), and Contax group (Contax) Each adhesive was applied to a cut enamel surface as per the manufacturer's instruction. Light-cured (Filtek Z250) or chemically cured composite (Luxacore Smartmix Dual) was bonded to the enamel of each specimen using a Tygon tube. After storage in distilled water for 24 hours, the bonded specimens were subjected to ${\mu}SBS$ testing with a crosshead speed of 1 mm/minute. The mean ${\mu}SBS$ (n=20 for each group) was statistically compared using two-way ANOVA, Tukey HSD, and t test at 95% level. Also the interface of enamel and composite was evaluated under FE-SEM. The results of this study were as follows ; 1. The ${\mu}SBS$ of the SE Bond group to the enamel was significantly higher than that of the AdheSE group, the Tyrian group, and the Contax group in both the light-cured and the chemically cured composite resin (p < 0.05). 2. There was not a significant difference among the hdheSE group, the Tyrian group, and the Contax group in both the light-cured and the chemically cured composite resin. 3. The ${\mu}SBS$ of the light-cured composite resin was significantly higher than that of the chemically cured composite resin when same adhesive was applied to the enamel (p < 0.05). 4. The interface of enamel and all 2-step self-etch adhesives showed close adaptation, and so the incompatibility of the chemically cured composite resin did not show.

Study on Photoelectrochemical Etching of Single Crystal 6H-SiC (단결정 6H-SiC의 광전화학습식식각에 대한 연구)

  • 송정균;정두찬;신무환
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.14 no.2
    • /
    • pp.117-122
    • /
    • 2001
  • In this paper, we report on photoelectrochemical etching process of 6H-SiC semiconductor wafer. The etching was performed in two-step process; anodization of SiC surface to form a deep porous layer and thermal oxidation followed by an HF dip. Etch rate of about 615${\AA}$/min was obtained during the anodization using a dilute HF(1.4wt% in H$_2$O) electrolyte with the etching potential of 3.0V. The etching rate was increased with the bias voltage. It was also found out that the adition of appropriate portion of H$_2$O$_2$ into the HF solution improves the etching rate. The etching process resulted in a higherly anisotropic etching characteristics and showed to have a potential for the fabrication of SiC devices with a novel design.

  • PDF

Dependence of deep submicron CMOSFET characteristics on shallow source/drain junction depth (얕은 소오스/드레인 접합깊이가 deep submicron CMOSFET 소자 특성에 미치는 영향)

  • 노광명;고요환;박찬광;황성민;정하풍;정명준
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.33A no.4
    • /
    • pp.112-120
    • /
    • 1996
  • With the MOsES (mask oxide sidewall etch scheme)process which uses the conventional i-line stepper and isotropic wet etching, CMOSFET's with fine gate pattern of 0.1.mu.m CMOSFET device, the screening oxide is deposited before the low energy ion implantation for source/drain extensions and two step sidewall scheme is adopted. Through the characterization of 0.1.mu.m CMOSFET device, it is found that the screening oxide deposition sheme has larger capability of suppressing the short channel effects than two step sidewall schem. In cse of 200.angs.-thick screening oxide deposition, both NMOSFET and PMOSFET maintain good subthreshold characteristics down to 0.1.mu.m effective channel lengths, and show affordable drain saturation current reduction and low impact ionization rates.

  • PDF

Crystalline Silicon Solar Cell with Selective Emitter Using One-step Diffusion Process (One-step diffusion으로 형성된 선택적 에미터 결정질 실리콘 태양전지에 관한 연구)

  • Jeong, Kyeong-Taek;Yang, O-Bong;Yu, Gwon-Jong;Lee, Jeong-Chul;Song, Hee-Eun
    • 한국태양에너지학회:학술대회논문집
    • /
    • 2011.11a
    • /
    • pp.40-44
    • /
    • 2011
  • Recent studies in crystalline silicon solar cell fabrication have been focused on high efficiency and low cost. However, the rising of the cost results in additional processes to approach high efficiency. The fabrication process also becomes complicated with additional technologies. In this paper, we studied the selective emitter formation with phosphorous paste to improve the conversion efficiency. Selective emitter formations like two-step diffusion or etch-back method require at least one more step compared in the conventional line since heavily and lightly doped area was needed to form separately.However,one-step diffusion process is the method diffusing heavily and lightly doped area at the same time only with additional screen-printing step. This study lays the foundation for the simple way to form the selective emitter.

  • PDF

MICROSHEAR BOND STRENGTH OF ADHESIVES ACCORDING TO THE DIRECTION OF ENAMEL RODS (법랑소주 방향에 따른 접착제의 미세전단 결합강도)

  • Cho, Young-Gon;Kim, Jong-Jin
    • Restorative Dentistry and Endodontics
    • /
    • v.30 no.4
    • /
    • pp.344-351
    • /
    • 2005
  • This study compared the microshear bond strength $({\mu}SBS)$ to end and side of enamel rod bonded by four adhesives including two total etch adhesives and two self-etch adhesives. Crown segments of extracted human molars were cut mesiodistally. The outer buccal or lingual surface was used as specimens cutting the ends of enamel rods, and inner slabs used as specimens cutting the sides of enamel rods. They were assigned to four groups by used adhesives: Group 1 (All-Bond 2), Group 2 (Single Bond), Group 3 (Tyrian SPE/One-Step Plus), Group 4 (Adper Prompt L-Pop). After each adhesive was applied to enamel surface, three composite cylinders were adhered to it of each specimen using Tygon tube. After storage in distilled water for 24 hours, the bonded specimens were subjected to ${\mu}SBS$ testing with a crosshead speed of 1 mm/minute. The results of this study were as follows: 1. The $({\mu}SBS)$ of Group 2 $(16.50\pm2.31 MPa)$ and Group 4 $(15.83\pm2.33 MPa)$ to the end of enamel prism was significantly higher than that of Group 1 $(11.93\pm2.25 MPa)$ and Group 3 $(11.97\pm2.05 MPa)$ (p<0.05). 2. The $({\mu}SBS)$ of Group 2 $(13.43\pm2.93 MPa)$ to the side of enamel prism was significantly higher than that of Group 1 $(8.64\pm1.53 MPa)$, Group 3 $(9.69\pm1.80 MPa)$, and Group 4 $(10.56 \pm1.75 MPa)$ (p<0.05), 3. The mean $({\mu}SBS)$ to the end of enamel rod was significantly higher than that to the side of enamel rod in all group (p<0.05).

중성빔 식각과 중성빔 원자층 식각기술을 이용한 TiN/HfO2 layer gate stack structure의 저 손상 식각공정 개발

  • Yeon, Je-Gwan;Im, Ung-Seon;Park, Jae-Beom;Kim, Lee-Yeon;Gang, Se-Gu;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2010.02a
    • /
    • pp.406-406
    • /
    • 2010
  • 일반적으로, 나노스케일의 MOS 소자에서는 게이트 절연체 두께가 감소함에 따라 tunneling effect의 증가로 인해 PID (plasma induced damage)로 인한 소자 특성 저하 현상을 감소하는 추세로 알려져 있다. 하지만 요즘 많이 사용되고 있는 high-k 게이트 절연체의 경우에는 오히려 더 많은 charge들이 trapping 되면서 PID가 오히려 더 심각해지는 현상이 나타나고 있다. 이러한 high-k 게이트 식각 시 현재는 주로 Hf-based wet etch나 dry etch가 사용되고 있지만 gate edge 영역에서 high-k 게이트 절연체의 undercut 현상이나 PID에 의한 소자특성 저하가 보고되고 있다. 본 연구에서는 이에 차세대 MOS 소자의 gate stack 구조중 issue화 되고 있는 metal gate 층과 gate dielectric 층의 식각공정에 각각 중성빔 식각과 중성빔 원자층 식각을 적용하여 전기적 손상 없이 원자레벨의 정확한 식각 조절을 해줄 수 있는 새로운 two step 식각 공정에 대한 연구를 진행하였다. 먼저 TiN metal gate 층의 식각을 위해 HBr과 $Cl_2$ 혼합가스를 사용한 중성빔 식각기술을 적용하여 100 eV 이하의 에너지 조건에서 하부층인 $HfO_2$와 거의 무한대의 식각 선택비를 얻었다. 하지만 100 eV 조건에서는 낮은 에너지에 의한 빔 스케터링으로 실제 패턴 식각시 etch foot이 발생되는 현상이 관찰되었으며, 이를 해결하기 위하여 먼저 높은 에너지로 식각을 진행하고 $HfO_2$와의 계면 근처에서 100 eV로 식각을 해주는 two step 방법을 사용하였다. 그 결과 anistropic 하고 하부층에 etch stop된 식각 형상을 관찰할 수 있었다. 다음으로 3.5nm의 매우 얇은 $HfO_2$ gate dielectric 층의 정확한 식각 깊이 조절을 위해 $BCl_3$와 Ar 가스를 이용한 중성빔 원자층 식각기술을 적용하여 $1.2\;{\AA}$/cycle의 단일막 식각 조건을 확립하고 약 30 cycle 공정시 3.5nm 두께의 $HfO_2$ 층이 완벽히 제거됨을 관찰할 수 있었다. 뿐만 아니라, vertical 한 식각 형상 및 향상된 표면 roughness를 transmission electron microscope(TEM)과 atomic force microscope (AFM)으로 관찰할 수 있었다. 이러한 중성빔 식각과 중성빔 원자층 식각기술이 결합된 새로운 gate recess 공정을 실제 MOSFET 소자에 적용하여 기존 식각 방법으로 제작된 소자 결과를 비교해 본 결과 gate leakage current가 약 one order 정도 개선되었음을 확인할 수 있었다.

  • PDF

MICRO-TENSILE BONDING STRENGTH OF REGIONAL PRIMARY MOLAR DENTIN (유구치 상아질의 각 부위에 적용된 수종의 복합레진 접착제의 미세인장접착강도에 관한 연구)

  • You, Jung-Eun;Choi, Yeong-Chul;Chio, Sung-Chul;Park, Jae-Hong
    • Journal of the korean academy of Pediatric Dentistry
    • /
    • v.36 no.3
    • /
    • pp.348-357
    • /
    • 2009
  • The purpose of this study was to evaluate the micro-tensile bond strength (${\mu}TBS$) of four luting resin to regional dentin of human primary teeth. Dentin from non-carious primary molars were prepared from different regions (s, superficial dentin; d, deep dentin; c, cervical dentin), and divided into groups based on anatomical locations and types of luting resins (Scotchbond Multi-purpose : SB ; One-Step : OS ; AdheSE Bond : ASE ; G-Bond : GB) : SB-s, SB-d, SB-c; OS-s, OS-d, OS-c; ASE-s, ASE-d, ASE-c ; GB-s, GB-d, GB-c. Luting resins were used according to the manufacturers' instructions, to bond $Light-Core^{TM}$ Core Build-Up Composite) to the exposed dentin specimens in the light-curing mode. After storage for 1 day, ${\mu}TBS$ was tested at a cross-head speed of 1 mm/min. Data were analyzed with T-test and two-way ANOVA. The bonding interface and fractography analyses were performed with SEM. The results were as follows : 1. ${\mu}TBS$ to superficial dentin was significantly higher than to deep dentin for SB(p<0.05). But there were no significant differences in regional ${\mu}TBS$ among OS, ASE, GB(p>0.05). 2. There were no significant differences in ${\mu}TBS$ to superficial dentin among each groups. But, in deep dentin, ${\mu}TBS$ of SB-d was significantly lower than those of OS-d, ASE-d, and GB-d(p<0.05). ${\mu}TBS$ of OS-d was significantly higher than those of GB-d(p<0.05), but there were no significant differences in ${\mu}TBS$ of ASEd. There were no significant differences among ${\mu}TBS$ of ASE-d, OS-d, and GB-d.

  • PDF

A Study on Taper Etching of Polysilicon-Part I : The Experimental Study (다결정실리콘의 경사식각에 관한 연구 - 제 1 부 : 실험적 고찰)

  • Lee, Jung-Kyu;Suh, Dong-Ryang;Byun, Jae-Dong
    • Journal of the Korean Institute of Telematics and Electronics
    • /
    • v.26 no.7
    • /
    • pp.50-57
    • /
    • 1989
  • Tapered etching of polysilicon films has been achieved by implanting phosphorus ions into the polysilicon film and using plasma etch in either $CF_4-O_2\;or\;SF_6$. A two-step plasma etching method is also proposed to control the taper angle of the etched edge without changing the implantion conditions. The taper angle is determined by the ratio of the etch rate of the undamaged region to that of the damaged top region of the polysilicon layer. The ratio is found to be dependent on the implantion dose, the implantion energy and the anisotropy of etching. The minimum angle in our experiments is about $10^{\circ}$. When the two-step etching method is employed, the taper angles can be controlled from the minimum angle up to about $55^{\circ}$.

  • PDF