• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 춘계학술발표회
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• pp.49-49
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• 1997

• 한국세라믹학회지
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• 제45권4호
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• pp.191-195
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• 2008

Highly ordered silver nanowire with a diameter of 10 nm was arrayed by electroless deposition in a porous anodic aluminum oxide(AAO) membrane. The AAO membrane was fabricated electrochemically in an oxalic acid solution via a two-step anodization process, while growth of the silver nanowire was initiated by using electroless deposition at the long-range-ordered nanochannels of the AAO membrane followed by thermal reduction of a silver nitrate aqueous solution by increasing the temperature up to $350^{\circ}C$ for an hour. An additional electro-chemical procedure was applied after the two-step anodization to control the pore size and channel density of AAO, which enabled us to fabricate highly-ordered silver nanowire on a large scale. Electroless deposition of silver nitrate aqueous solution into the AAO membrane and thermal reduction of silver nanowires was performed by increasing the temperature up to $350^{\circ}C$ for 1 h. The morphologies of silver nanowires arrayed in the AAO membrane were investigated using SEM. The chemical composition and crystalline structure were confirmed by XRD and EDX. The electroless-deposited silver nanowires in AAO revealed a well-crystallized self-ordered array with a width of 10 nm.

• Nuclear Engineering and Technology
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• 제26권4호
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• pp.570-577
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• 1994

The loss of water in the carbon steel balls and water region of the end shield for CANDU 6 reactor could lead to significant temperature gradient through the end shield structure which amy result in the excessive deformation. With an assumed end shield drained scenario, the heat deposition rates were calculated through the end shield associated with the central fuel channel during full power operation as an initial step to thermal stress analysis. The drained case was compared with that of water present normal case in therms of heat deposition rater and the total heating throughout the end shield regions. The compared results show that the heat deposition and the total heating remain almost the same between the two cases. It was found that the change of volume integrated flux in the end shield regions due to the loss of water contribute a negligible effect on the heat deposition in this region.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1333-1336
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• 1998

Hydrogenated amorphous silicon(a-Si:H) films which were deposited by plasma enhanced chemical deposition(PECVD) have been recrystallized by the two-step rapid thermal annealing(RTA) employing the halogen lamp. The a-Si:H films evolve hydrogen explosively during the high temperature crystallzation step. In result, the recrystallized polycrystalline silicon(poly-Si) films have poor surface morphology. In order to avoid the hydrogen evolution, the films have undergone the dehydrogenation step prior to the crystallization step Before the RTA process, the active area of thin film transistors (TFT's) was patterned. The prepatterning of the a-Si:H active islands may reduce thermal damage to the glass substrate during the recrystallization. The computer generated simulation shows the heat propagation from the a-Si:H islands into the glass substrate. We have fabricated the poly-Si TFT's on the silicon wafers. The maximun ON/OFF current ratio of the device was over $10^5$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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• pp.416-418
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• 2000

Thin films of phase-pure perovskite $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ (PLT) were deposited in-situ onto Pt/Ti/$SiO_2$/Si substrates by pulsed laser deposition. We have systematically investigated the variation of grain sizes depending on the process condition. Both in-situ annealing and ex-situ annealing treatments have been compared depending on the annealing time. The grain sizes of PLT thin films were successfully controlled 260 to 350 nm by changing process parameters. Microstructural and electrical properties of the film were investigated by C-V measurement, leakage current measurement and SEM. Two-step process to grow $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ (PLT) films was adopted and verified to be useful to enlarge the grain size of the film and to enhance the leakage current characteristics.

• Journal of information and communication convergence engineering
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• 제4권3호
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• pp.111-113
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• 2006

A new thin film deposition technique of piezoelectric ZnO film and its successful application for film bulk: acoustic resonator (FBAR) devices are presented. The two-step deposition used seems to be able to deposit ZnO film with a highly preferred orientation. The FBAR devices with the ZnO films show an excellent return loss of $35{\sim}50$ dB at $1.5{\sim}2$ GHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.399-399
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• 2008

Synthesis and characterization of ZnO structure such as nanowires, nanorods, nanotube, nanowall, etc. have been studied to multifunctional application such as optical, nanoscale electronic and chemical devices because it has a room-temperature wide band gap of 3.37eV, large exiton binding energy(60meV) and various properties. Various synthesis methods including chemical vapor deposition (CVD), physical vapor deposition, electrochemical deposition, micro-emulsion, and hydrothermal approach have been reported to fabricate various kinds of ZnO nanostructures. But some of these synthesis methods are expensive and difficult of mass production. Wet chemical method has several advantage such as simple process, mass production, low temperature process, and low cost. In the present work, ZnO nanorods are deposited on ITO/glass substrate by simple wet chemical method. The process is perfomed by two steps. One-step is deposition of ZnO seeds and two-step is growth of ZnO nanorods on substrates. In order to form ZnO seeds on substrates, mixture solution of Zn acetate and Methanol was prepared.(one-step) Seed layers were deposited for control of morpholgy of ZnO seed layers by spin coating process because ZnO seeds is deposited uniformly by centrifugal force of spin coating. The seed-deposited samples were pre-annealed for 30min at $180^{\circ}C$ to enhance adhesion and crystallinnity of ZnO seed layer on substrate. Vertically well-aligned ZnO nanorods were grown by the "dipping-and-holding" process of the substrates into the mixture solution consisting of the mixture solution of DI water, Zinc nitrate and hexamethylenetetramine for 4 hours at $90^{\circ}C$.(two-step) It was found that density and morphology of ZnO nanorods were controlled by manipulation of ZnO seeds through rpm of spin coating. The morphology, crystallinity, optical properties of the grown ZnO nanostructures were carried out by field-emission scanning electron microscopy, high-resolution electron microscopy, photoluminescence, respectively. We are convinced that this method is complementing problems of main techniques of existing reports.

• 한국재료학회지
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• 제9권1호
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• pp.86-91
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• 1999

(001) $\textrm{SrTiO}_3$(STO) 기판위에 고온초전도 $\textrm{YBa}_{2}\textrm{Cu}_{3}\textrm{O}_{7-x}$(YBCO)박막을 이용한 계단형 모서리 임계접합을 제조하였다. STO (100) 단결정 기판위에 계단형 모서리(step-edge)를 제작하기 위한 이온밀링 마스크로 plasma enhanced chemical vapor deposition방법으로 증착된 diamond-like carbon (DLC) 박막을 사용하였고, oxygen reactive ion etch 방법으로 건식식각하였다. 이렇게 제작된 계단형 모서리 기판위에 c-축 수직한 YBCO 박막과 STO박막을 pulsed laser deposition방법으로 에피텍셜하게 증착하였다. 계단의 상층과 하층에서 모두 임계가 형성되었으며 이 접합의 임계온도는 77 K 이상이었고 16K에서 $\textrm{I}_{c}\textrm{R}_{n}$products가 7.5mV, 77 K에서 0.3mV의 값을 나타내었다. 이들 전류-전압 특성은 two noisy resistively shunted Josephson junction 모델을 잘 만족하였다.

• 대한환경공학회지
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• 제22권3호
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• pp.575-585
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• 2000

서울지역의 질량 및 중금속 건식침적량과 대기중 입자의 입경분포를 1998년 7월부터 11월까지 건식침적판, 다단계 관성충돌 채취기(Cascade Impactor) 및 조대업자 채취기(Coarse Particle Sampler)를 사용하여 측정하였다. 인위적 오염원에 기인한 중금속(Cu, Mn, Ni, Pt, Zn)의 건식침적량이 주로 자연적 오염원에 기인한 중금속(Al, Ca)의 건식침적량에 비하여 약 10배에서 100배 정도 낮은 값을 나타내었다. 완전한 총 입자 및 중금속 입자의 입경분포는 입자 입경이 $10{\mu}m$보다 작은 영역에서 두 개의 peak를 보이고 $10{\mu}m$보다 큰 입자 영역에서 또다른 peak을 보이는 삼봉형(trimodal) 입경분포를 보여주었다. Sehmel-Hodgson 모델을 사용하여 건식침적속도를 추정하고 이를 이용하여 총 입자 및 중금속 입자의 건식침적량을 계산하기 위하여 다단계 모델(Multi-step model)을 사용하였다. 이 방법에 의하면, 건식침적량은 입자의 입경이 $10{\mu}m$보다 큰 입자들의 높은 건식침적속도에 의하여 크게 영향을 받고 이로부터 건식침적은 $10{\mu}m$보다 큰 입자들의 침적이 대부분을 차지한다는 것을 보여주었다. 측정된 입자의 입경분포와 추정된 건식침적속도를 이용하여 다단계 모델을 통하여 예측된 건식침적량은 직접 측정된 건식침적량과 비교하였을 때 잘 일치하였다.

• 한국세라믹학회지
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• 제33권3호
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• pp.313-320
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• 1996

We have fabricated an in-plane aligned a-axis oriented YBa2Cu3O7-x (a-YBCO) thin film on a LaSrGaO4(100) substrate with a PrBa2Cu3O7-x(PBCO) template layer by two step plused laser deposition using 308 nm XeCl excimer laser. A YBCO layer and PBCO layer grown at low temperatures were used as template layers. We have investigated the effect of the deposition temperature of template layers on the superconducting and struc-tural properties of in-plane aligned a-YBCO thin films. An optimal deposition temperature of the PBCO template layers was 630. In-plane aligned a-YBCO thin films showed an anisotropy ratio in resistivity of 11.5 and a zero resistance temperature of 88 K.