• Nuclear Engineering and Technology
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• v.55 no.9
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• pp.3334-3341
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• 2023

We studied the irradiation effects of fast neutron generated by a 30 MeV cyclotron on the electrical and switching characteristics of NPT-IGBT devices. Fast neutron fluence ranges from 2.7 × 10⁹ to 1.82 × 10¹³ n/cm². Electrical characteristics of the IGBT device such as I-V, forward voltage drop and additionally switching characteristics of turn-on and -off were measured. As the neutron fluence increased, the device's threshold voltage decreased, the forward voltage drop increased significantly, and the turn-on and turn-off time became faster. In particular, the delay time of turn-on switching was improved by about 35% to a maximum of about 39.68 ns, and that of turn-off switching was also reduced by about 40%-84.89 ns, showing a faster switching.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.6 no.3
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• pp.168-173
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• 2013

In this paper, we tried different two approach to improve the performance of the IGBT. The first approach is that adding N+ region beside P-base in the conventional IGBT. It can make the conventional IGBT to get faster turn-off time and lower conduction loss. The second approach is that adding P+ region on right side under gate to improve latching current of conventional IGBT. The device simulation results show improved on-state, latch-up and switching characteristics in each structure. The first one was presented lower voltage drop(3.08V) and faster turn-off time(3.4us) than that of conventional one(3.66V/3.65us). Also, second structure has higher latching current(369A/?? ) that of conventional structure. Finally, we present a novel IGBT combined the first approach with second one for improved trade-off characteristic between conduction and turn-off losses. The proposed device has better performance than conventional IGBT.

• The Transactions of the Korean Institute of Power Electronics
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• v.22 no.2
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• pp.181-184
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• 2017

This study analyzes the turn-on and turn-off transients of a metal-oxide-semiconductor field-effect transistor (MOSFET) with high-switching frequency systems. In these systems, the voltage distortion becomes serious at the output terminal of a Vienna rectifier by the turn-off delay of the MOSFET. The current has low-order harmonics through this voltage distortion. This paper describes the transient of the turn-off that causes the voltage distortion. The algorithm for reducing the sixth harmonic using a proportional-resonance controller is proposed to improve the current distortion without complex calculation for compensation. The reduction of the current distortion by high-switching frequency is verified by experiment with the 2.5-kW prototype Vienna rectifier.

• Journal of Advanced Marine Engineering and Technology
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• v.22 no.5
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• pp.617-625
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• 1998

A passive energy recovery snubber for high-power-factor boost rectifier, in which the main switch is implemented with a MOSFET, is described in terms of the equivalent circuits that are operational during turn-on and turn-off sequences. These equivalent circuits are analyzed so that the overshoot voltage across the main switch, the snubber current, and the turn-off transition time can be predicted analytically. From these results, the normalized overshoot voltage is reduced to 1 as $_W2T_on$ varies from zero to $\pi$/2, and then it is fIxed at 1 for $_W2T_on$> $\pi$/2. The peak snubber inductor current is directly proportional to the input current. The turn-offtransition time wltoffvaries from 0 to 2.57, depending on $_W2T_on$. The main switch combined with proposed snubber can be turned on with zero current and turned off at limited voltage stress. The high-power-factor boost rectifier with proposed snubber is implemented, and the experimental results are presented to confirm the validity of proposed snubber.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.600-606
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• 1992

The series connection of power switching semiconductor elements is essential when a high voltage converter is made, so researches are being conducted to further develop this technology. In the series connection of power switching semiconductor elements, the main problem is that simultaneous conduction at turn-on and simultaneous blocking at turn-off together with voltage balancing are unattainable because of the difference of their switching characteristics. In this paper a novel series connection algorithm is proposed, which can implement not only the synchronization of the points of turn-on and turn-off time but the dynamic voltage balancing in spite of the difference of each switching characteristics. The proposed method is that the compensated control signal is attained from the voltage feedback signal and applied to the series-connected power transistors independently. Computer simulation and experimental results verify its validity.

• Proceedings of the KIPE Conference
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• 2003.07b
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• pp.677-680
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• 2003

The control of the SRM(Switched Reluctance Motor) is usually based on the non-linear inductance profiles with positions. So determination of optimal switching angle is very different. we present self-tuning control of SRM for maximum torque and efficiency with phase current and shaft position sensor During the sample time, micro-controller checks the number of pre-checked pulse. After micro-controller calculates between two data, it move forward or backward turn-off angle. When the turn-off angle is fixed optimal turn-off angle, turn-on angle moves forward or backward by a step using self-tuning control method. And then, optimal turn-off angle is searched once again. As such a repeating process, turn-on/off angle is moves automatically to obtain the maximum torque and efficiency. The experimental results are presented to validate the self-tuning algorithm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.912-917
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• 2006

In this paper, Trench emitter electrode IGBT structure is proposed and studied numerically using the device simulator, MEDICI. The breakdown voltage, on-state voltage drop, latch up current density and turn-off time of the proposed structure are compared with those of the conventional trench gate IGBT(TIGBT) structures. Enhancement of the breakdown voltage by 19 % is obtained in the proposed structure due to dispersion of electric field at the edge of the bottom trench gate by trench emitter electrode. In addition, the on-state voltage drop and the latch up current density are improved by 25 %, 16 % respectively. However increase of turn-off time in proposed structures are negligible.

• Journal of the Optical Society of Korea
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• v.18 no.4
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• pp.395-400
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• 2014

We proposed a method for fast turn-off switching of a vertically-aligned liquid crystal cell by low-temperature curing of the polymer structure. We confirmed that the turn-off times of the fabricated cells were reduced significantly as the curing temperature was lowered to $-20^{\circ}C$. We accounted for the effect of low-temperature curing on the turn-off time by using a mathematical model and by observing images obtained via scanning electron microscopy. We also confirmed that low-temperature curing is more effective in reducing the response time when the device is operated at a low temperature.

• Journal of Information Display
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• v.10 no.1
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• pp.16-18
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• 2009

A three-terminal hybrid-aligned nematic liquid crystal (3T-HAN LC) cell capable of fast turn-off switching is proposed in this paper. By employing the relaxation process initiated by an electric-field pulse, a fast turn-off time of less than 1 ms can be obtained through optically hidden relaxation. A low operating voltage and high transmittance were confirmed through simulations and experiments.

• Journal of Power Electronics
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• v.10 no.2
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• pp.132-137
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• 2010

Interleaving techniques are widely used to reduce input/output ripples and to increase the power capacity of boost converters operating in critical conduction mode. Two types of phase-shift control schemes are studied in this paper, the turn-on time shifting method and the turn-off time shifting method. It is found that although the turn-off time shifting method exhibits better performance, it suffers from sub-harmonic oscillations at high input voltages. To solve this problem, an intensive quantitative analysis of the sub-harmonic oscillation phenomenon is made in this paper. Based upon that, a novel modified turn off time shifting control scheme for interleaved boost converters operating in critical conduction mode is proposed. An important advantage of this scheme is that both the master phase and the slave phase can operate stably in critical conduction mode without any oscillations in the full input voltage range. This method is implemented with a FPGA based digital PWM control platform, and tests were carried out on a two-phase interleaved boost PFC converter prototype. Experimental results demonstrated the feasibility and performance of the proposed phase-shift control scheme.