• 대한전기학회논문지
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• 제43권2호
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• pp.244-250
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• 1994

This paper presents the design of a new turn-off gate drive circuit for GTO which can accomplish faster turn-off switching. The major disadvantage of the conventional turn-off gate drive technique is that it has a difficulty in realizing high negative diS1GQT/dt because of VS1RGM(maximum reverse gate voltage) and stray inductances of turn-off gate drive circuit[1~2]. The new trun-off gate drive technique can overcome this problem by adding another turn-off gate drive circuit to the conventional turn-off gate drive circuit. Simulation and experimental results of the new turn-off gate drive circuit in conjunction with chopper circuit verify a faster turn-off switching performance.

• Nuclear Engineering and Technology
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• 제54권2호
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• pp.501-506
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• 2022

Long turn-off time limits high frequency operation of Bipolar Junction Transistors (BJTs). Turn-off time decreases with increases in the recombination rate of minority carriers at switching transients. Fast neutron irradiation on a Si BJT incurs lattice damages owing to the displacement of silicon atoms. The lattice damages increase the recombination rate of injected holes with electrons, and decrease the hole lifetime in the base region of pnp Si BJT. Fast neutrons generated from a beryllium target with 30 MeV protons by an MC-50 cyclotron were irradiated onto pnp Si BJTs in experiment. The experimental results show that the turn-off time, including the storage time and fall time, decreases with increases in fast neutron fluence. Additionally, it is confirmed that the base current increases, and the collector current and base-to-collector current amplification ratio decrease due to fast neutron irradiation.

• 전력전자학회논문지
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• 제3권4호
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• pp.418-425
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• 1998

본 논문에서는 위상각 제어에서 주어진 턴온 각에서 최대의 토크를 유지하기 위한 적절한 턴오프 각을 자기동조방식(self-tuning method)에 의해 결정하는 방식을 제안하였다. 엔코더에 의해 샘플링 시간(sampling time)동안 구해진 펄스 수는 바로 이전의 샘플링시간 동안 구해진 펄스 수와 비교하여 턴오프 각을 앞으로 또는 뒤로 이동한다. 이러한 과정을 되풀이함으로서 최대 토크를 발생하는 턴오프 각을 결정하게 된다. 실제 회로에서는 원 칩 마이크로프로세서에 의해 처리되었으며 실험을 통해 턴온 각이 변하더라도 자기동조방식에 의해 턴오프 각을 조정하면 빠른 속도가 유지됨을 보여 주었다.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제51권7호
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• pp.339-350
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• 2002

Pole arcs, turn-on angle, and turn-off angle are major design factors, which affects Switched Reluctance Motor's torque performance. If these design factors are considered independently, the enhancement of SRM performance is restricted. Therefore, we need to consider pole arcs, turn-on angle and turn-off angle at the same time, when we design SR. In this paper, we analyze how these factors affect to torque ripple and average torque by using dynamic Finite Element Method(FEM) with derive circuit and present the good design results according to the various speeds. Especially, we formulate turn-on and turn-off angle from a voltage equation and present effective design range.

• 한국광학회지
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• 제21권2호
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• pp.69-73
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• 2010

본 논문에서는 광학적으로 비등방성인 폴리머를 이용하여 $90^{\circ}$ TN(Twisted Nematic) 액정셀의 응답시간을 향상시키는 방법을 제안하였다. 액정과 비등방성 폴리머를 일정 비율로 혼합하여 TN 액정셀에 주입한 뒤 UV를 조사하여 폴리머 네트워크를 형성시킴으로써 투과율에 영향을 주지 않고 응답시간을 향상시킬 수 있다. 폴리머 네트워크가 형성되지 않은 TN 액정셀의 turn-off 시간이 16 ms인데 반해 제안된 방법에서는 액정과 비등방성 폴리머의 혼합 비율이 3, 5, 10 wt%로 증가할 때 12, 11, 9 ms로 고속 turn-off가 구현될 수 있다. 또한, turn-off 동작 시 TN 액정셀에서 발생하였던 delay time과 backflow가 폴리머 네트워크의 형성에 의해 크게 개선됨을 확인하였다.

• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1073-1077
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• 2006

Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. Proton irradiation was carried out at 5.56 MeV energy with $1{\times}10^{12}/cm^2$ doze from the back side of the wafer. The I-V, breakdown voltage, and turn-off delay time of the device were analyzed and compared with those of un-irradiated device and e-beam irradiated device which was conventional method for minority carrier lifetime reduction. For proton irradiated device, the breakdown voltage and the on-state voltage were 733 V and 1.85 V which were originally 749 V and 1.25 V, respectively. The turn-off time has been reduced to 170 ns, which was originally $6{\mu}s$ for the un-irradiated device. The proton irradiated device was superior to e-beam irradiated device for the breakdown voltage and the on-state voltage which were 698 V and 1.95 V, respectively, nevertheless turn-off time of proton irradiated device was reduced to about 60 % compared to that of the e-beam irradiated device.

• 전기의세계
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• 제17권2호
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• pp.6-10
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• 1968

The conversive limitation of electric energy for the thyristor inverter is analysed under the boundary conditions which the term of a negative inverse voltage is longer than that of the turn off time of the thyristor under commutation. It is clear that the maximum electric energy conversion is affected by the turn off time of the thyristor, the reactance of a commutation reactor, the capacity of a commutation condenser and the voltage of Direct current source. It is useful for design the thyrister invertor and the motor speed control to apply the above conclusion.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.22-23
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• 2006

Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. Proton irradiation was carried out at 5.56 MeV energy with $1{\times}10^{12}/cm^2$ doze from the back side of the wafer. Characterization of the device was performed by I-V, breakdown voltage, threshold voltage, and turn-off delay time measurement. For irradiated device by 5.56 MeV energy, the breakdown voltage and the threshold voltage were 730 V and 6.5~6.6 V, respectively. The turn-off time has been reduced to 170 ns, which was original $6\;{\mu}s$ for the un-irradiated device.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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• pp.351-354
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• 2001

In this paper, we present self-tuning control of switched reluctance motor for maximum torque with phase current and shaft position sensor. Determination method of turn-on/off angle is realized by using self-tuning control method. During the sampling time, micro-controller checks the number of pulse from encoder and compare with the number of pre-checked pulse. After micro-controller calculates between two data, it moves forward or backward turn-off angle. When the turn-off angle is fixed optimal turn-off angle, the turn-on angle automatically moves forward or backward by a step using self-tuning control method. And then, optimal turn-off angle is searched once again. As such a repeating process, turn-on/off angle is moved automatically to obtain the maximum torque. The experimental results are presented to validate the self-tuning algorithm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.357-360
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• 2003

In this paper, we designed 4.5kV/1.5kA IGCT devices. GCT thyristor has many superior characteristics compared with GTO thyristor, for examples; snubberless turn-off capability, short storage time, high turn-on capability, small turn-off gate charge and low total power loss of the application system containing device and peripheral parts such as anode reactor and snubber capacitance. In this paper we designed GCT thyristor devices, and analyzed static and dynamic characteristics of GCT thyristor depending on the minority carrier lifetime, n-base thickness and doping concentration of n-base region, respectively. Especially, turn-on and turn-off characteristics are very important characteristics for GCT thyristor devices. So, we considered above characteristic for design and analysis of GCT devices.