• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.55-55
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility (${\sim}900cm^2/Vs$). These electronic properties allow high breakdown voltage, high frequency, and high temperature operation compared to Silicon devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances. the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. In this paper, we report the effect of the interface states ($Q_s$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. The result is a low-loss transient characteristic at low $Q_s$. Based on the simulation results, the DMOSFETs exhibit the turn-on time of 10ns at short channel and 9ns at without the interface charges. By reducing $SiO_2/SiC$ interface charge, power losses and switching time also decreases, primarily due to the lowered channel mobilities. As high density interface states can result in increased carrier trapping, or recombination centers or scattering sites. Therefore, the quality of $SiO_2/SiC$ interfaces is important for both static and transient properties of SiC MOSFET devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.110-120
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• 2016

A power-efficient neuromodulator is needed for implantable systems. In spite of their stimulation signal's simplicity of wave shape and waiting time of MCU(micro controller unit) much longer than execution time, there is no consideration for low-power design. In this paper, we propose a novel of low-power algorithm based on the characteristics of stimulation signals. Then, we designed and implement a neuromodulation software that we call NMS(neuro modulation simulation). In order to implement low-power algorithm, first, we analyze running time of every function in existing NMS. Then, we calculate execution time and waiting time for these functions. Subsequently, we estimate the transition time between active mode (AM) and low-power mode (LPM). By using these results, we redesign the architecture of NMS in the proposed low-power algorithm: a stimulation signal divided into a number of segments by using characteristics of the signal from which AM or LPM segments are defined for determining the MCU power reduces to turn off or not. Our experimental results indicate that NMS with low-power algorithm reducing current consumption of MCU by 76.31 percent compared to NMS without low-power algorithm.

• Journal of The Korean Astronomical Society
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• v.50 no.3
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• pp.79-92
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• 2017

We present a BV I optical photometric study of the old open cluster Ruprecht 6 using the data obtained with the SMARTS 1.0 m telescope at the CTIO, Chile. Its color-magnitude diagrams show the clear existence of the main-sequence stars, whose turn-off point is located around $V{\approx}18.45mag$ and $B-V{\approx}0.85mag$. Three red clump (RC) stars are identified at V = 16.00 mag, I = 14.41 mag and B - V = 1.35 mag. From the mean $K_s-band$ magnitude of RC stars ($K_s=12.39{\pm}0.21mag$) in Ruprecht 6 from 2MASS photometry and the known absolute magnitudes of the RC stars ($M_{K_S}=-1.595{\pm}0.025mag$), we obtain the distance modulus to Ruprecht 6 of $(m-M)_0=13.84{\pm}0.21mag$ ($d=5.86{\pm}0.60kpc$). From the ($J-K_s$) and (B - V ) colors of the RC stars, comparison of the (B - V ) and (V - I) colors of the bright stars in Ruprecht 6 with those of the intrinsic colors of dwarf and giant stars, and the PARSEC isochrone fittings, we derive the reddening values of E(B - V ) = 0.42 mag and E(V - I) = 0.60 mag. Using the PARSEC isochrone fittings onto the color-magnitude diagrams, we estimate the age and metallicity to be: $log(t)=9.50{\pm}0.10(t=3.16{\pm}0.82Gyr)$ and $[Fe/H]=-0.42{\pm}0.04dex$. We present the Galactocentric radial metallicity gradient analysis for old (age > 1 Gyr) open clusters of the Dias et al. catalog, which likely follow a single relation of $[Fe/H]=(-0.034{\pm}0.007)R_{GC}+(0.190{\pm}0.080)$ (rms = 0.201) for the whole radial range or a dual relation of $[Fe/H]=(-0.077{\pm}0.017)R_{GC}+(0.609{\pm}0.161)$ (rms = 0.152) and constant ([Fe/H] ~ -0.3 dex) value, inside and outside of RGC ~ 12 kpc, respectively. The metallicity and Galactocentric radius ($13.28{\pm}0.54kpc$) of Ruprecht 6 obtained in this study seem to be consistent with both of the relations.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.601-608
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• 2014

In this paper, we have characterized the electrical properties related to gate leakage current in AlGaN/GaN MISHFETs with varying the thickness (0 to 10 nm) of $Al_2O_3$ gate insulator which also serves as a surface protection layer during high-temperature RTP. The sheet resistance of the unprotected TLM pattern after RTP was rapidly increased to $1323{\Omega}/{\square}$ from the value of $400{\Omega}/{\square}$ of the as-grown sample due to thermal damage during high temperature RTP. On the other hand, the sheet resistances of the TLM pattern protected with thin $Al_2O_3$ layer (when its thickness is larger than 5 nm) were slightly decreased after high-temperature RTP since the deposited $Al_2O_3$ layer effectively neutralizes the acceptor-like states on the surface of AlGaN layer which in turn increases the 2DEG density. AlGaN/GaN MISHFET with 8 nm-thick $Al_2O_3$ gate insulator exhibited extremely low gate leakage current of $10^{-9}A/mm$, which led to superior device performances such as a very low subthreshold swing (SS) of 80 mV/dec and high $I_{on}/I_{off}$ ratio of ${\sim}10^{10}$. The PF emission and FN tunneling models were used to characterize the gate leakage currents of the devices. The device with 5 nm-thick $Al_2O_3$ layer exhibited both PF emission and FN tunneling at relatively lower gate voltages compared to that with 8 nm-thick $Al_2O_3$ layer due to thinner $Al_2O_3$ layer, as expected. The device with 10 nm-thick $Al_2O_3$ layer, however, showed very high gate leakage current of $5.5{\times}10^{-4}A/mm$ due to poly-crystallization of the $Al_2O_3$ layer during the high-temperature RTP, which led to very poor performances.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

• Journal of the Economic Geographical Society of Korea
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• v.17 no.2
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• pp.335-348
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• 2014

This study investigates the technical level and industrial structure for the case of the Gazelle industry in Chungnam Province. As a results of the empirical study, the Gazelle industry of Chungnam Province shows a competitive position in terms of scale and growth capacity, which. in turn, provides income and tax collection effects due to the high level of industrial efficiency. Among the Gazelle industry of Chungnam Province, low-level technology industry, compared to high and middle-level technology industries, accelerates higher level of agglomeration and industrial growth, which provides a rapid change of industrial structure of the province. Theses research results imply that research and development investment in the Gazelle industry is essential and industrial development strategy should be conducted via step-by-step with business scale quotient (BQ) and industrial growth rate (IG). Meanwhile, there should be a serious policy review whether low-level technology industry is better off for the province compared to high and middle-level technology industries. This study expects that regional industrial policy applying the concept of Gazelle industry can accelerate regional development since the Gazelle industry contributes to the high level of income growth and employment creation.

• Proceedings of the KSAR Conference
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• 2003.06a
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• pp.27-27
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• 2003

A diversified and concentrative approach of methylation player can be one of the most powerful studies in the understanding of global epigenetic modifications. Previous studies have suggested that DNA methylation contributes to transcriptional silencing through the several DNA methylation-mediated repression systems by hypermethylation, including methyltransferases (DNMTs), DNA methyltransferase association protein 1 (DMAPl), methyl-CpG binding domain (MBD), and histone deacetylases (HDACs). Assembly of these regulatory protein complexes act sequentially, reciprocally, and interdependently on the newly composed DNA strand through S phase. Therefore, these protein complexes have a role in coupling DNA replication to the designed turn-off system in genome. In this study, we attempted to address the role of DNA methylation by the functional analysis of the methyltransferase molecule, we described the involvement of DMAP1 and DNMTs in cell divistion and the effect of their loss. We also described distinct patterns that DMAP1 and DNMTs are spatially reorganized and displaced from condensing chromosomes as cells progress through mitosis in HeLa cell, COS7, and HIH3T3 cell cycle progressions. DNMT1, DNMT3b, and DMAP1 do not stably contact the genetic material during chromosome compaction and repressive expression. These finding show that the loss of activities of DNMTs and DMAP1 occure stage specifically during the cell cycle, may contribute to the integral balance of global DNA methylation. This is consistent with previous studies resulted in decreased histone acetyltransferases and HDACs, and differs from studies resulted in increased histone methyltransferases. Our results suggest that DNA methylation by DNMTs and DMAP1 during mitosis acts to antagonize hypermethylation by which this mark is epigenetical mitotic-specific methylation.

• Cartoon and Animation Studies
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• s.6
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• pp.7-22
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• 2002

Animation constitutes the core of the media industry, which in turn lies at the center of the cultural industry. It is considered one of the industries where South Korea has the competitive edge over other countries. With the pool of customers getting wider, the genre of animation has become more and more diverse, forming a great market for it. Aware of this trend, this study focused on animation as a part of the pop culture, and on providing corresponding various viewpoints for future cultural studies. This researcher measured the practicality and persuasiveness of this study through Shreck, a three-dimensional C.G. animation which is acclaimed for its success in dismantling the old grammar of animation movies that represent the anti-Disney ideas. This researcher felt it imperative to heed the unique language of Shreck, which contains discourses on various cultural ideologies such as paradoxical structure that pits entertainment that is shown through dismantling of the canon, feminism and antifeminism against each other. This study analyzed the entertaining element of the animation genre by means of the Semiotics of Keith Moxey, thereby attempting to establish a legitimate social status of the genre, whose artfulness has been depreciated in the art society. In chapter II, this researcher examines the chronological development of three-dimensional C.G. animation that has shown a rapid advancement. Chapter III defines the cultural ideology of Shreck by exploring basic theories and texts employed in analysis of art works. This study started with the assumption that defines, from the viewpoint of symbology, the animation text as an aggregate of discourses on entertainment, and competitive and paradoxical ideologies. Then, this researcher analyzed the text and the generation process of meanings in Shreck. Consequently, this study has come to the following conclusions: First, Shreck induces changes of concepts about the canon by means of distorting and reversing the existing animation movies, which seems to reflect in the contemporary tendency of seeking new interpretations of entertainment. Second, Shreck shows up the cognitive changes of our age as to feminism by competing feminism against antifeminism. Although Shreck serves as a venue of competition between the two opposing ideas, it stops short of brushing off women as outsiders in society. Rather, it represents the resistance to the male chauvinism existing in the structures of animation and culture. As shown in the text analysis, Shreck presents an advent of a new ideology critical of the previous animation films. In addition, it reflects in the struggle between the pro-feminism on the part of the viewers and the anti-feminism that lies in the social and culture structure. This study, however, is limited in its scope and selection of subject. First, although this researcher has stressed the importance of understanding the animation as part of the pop culture and conducting researches within the historic paradigm, this study fails to provide an in-depth insight in the impacts that the changes in the C.G. industry and the systematic conditions may have on the three-dimensional C.G. animation genre. Furthermore, this study runs the risk of being understood as pro-American due to its selection of Shreck as its research subject.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.155-161
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• 2000

BN films composed of c-BN(70%) and h-BN(30%) phases have been synthesized by the ion beam assisted deposition (IBAD) process and stabilized by post-annealing. Boron was e-beam evaporated at 1.2 $\AA$/sec and nitrogen was ionized and accelerated at about 100 eV by the end-hall type ion gun. Substrates were negatively biased by DC 400 and 500 V, respectively, and heated at $700^{\circ}C$. Synthesized BN films were in-situ post-annealed at 700 or $800^{\circ}C$, respectively, for 1 hr without breaking vacuum. BN films without post-annealing were peeled off from substrates immediately when they were exposed to the air while those with post-annealing at $800^{\circ}C$ were stabilized. Post annealing reduced the film stress from 4.9 GPa to 3.4 GPa, but no considerable stress release in the c-BN phase was observed, contrary to previous reports that the stress relaxation in the c-BN phase is the main mechanism for the stabilization. Structural and chemical relaxation of non c-BN phase is supposed to be responsible for the film stress reduction and, in turn, stabilization, especially when the c-Bn content of the film is not high.