• 전자공학회논문지
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• 제53권5호
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• pp.69-76
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• 2016

MCT (MOS Controlled Thyristor)의 전류 구동능력은 도통상태의 MCT를 턴-오프 시킬 수 있는 능력, 즉 off-FET의 성능에 의해 결정되고, MCT의 주된 응용분야인 펄스파워 분야에서는 턴-온 시의 피크전류($I_{peak}$)와 전류상승기울기(di/dt) 특성이 매우 중요하다. 이러한 요구사항을 만족시키기 위해서는 MCT의 on/off-FET 성능 조절이 중요하지만, 깊은 접합의 P-웰과 N-웰을 형성하기 위한 삼중 확산공정과 다수의 산화막 성장공정은 이온주입 불순물의 표면농도를 변화시키고 on/off-FET의 문턱전압($V_{th}$) 조절을 어렵게 한다. 본 논문에서는 on/off-FET의 $V_{th}$를 개선하기 위한 채널영역 문턱전압 이온주입에 대하여 시뮬레이션을 진행하고 이를 토대로 제작한 MCT의 전기적 특성을 비교 평가하였다. 그 결과 문턱전압 이온주입을 진행한 MCT의 경우(활성영역=$0.465mm^2$) $100A/cm^2$ 전류밀도에서의 전압손실($V_F$)은 1.25V, 800V의 어노드 전압에서 $I_{peak}$ 및 di/dt는 290A와 $5.8kA/{\mu}s$로 문턱전압 이온주입을 진행하지 않은 경우와 유사한 특성을 나타낸 반면, $100A/cm^2$의 구동전류에 대한 턴-오프 게이트전압은 -3.5V에서 -1.6V로 감소하여 MCT의 전류 구동능력을 향상시킴을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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• pp.346-349
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• 1996

In application of high power IGBT PWM inverters, the treatable power range is considerably limited due to the overvoltage caused by the stray inductance components within the power circuit. This paper proposes a new gate drive circuit for IGBTs which can actively suppress the overvoltage across the driven IGBT at turn-off and the overvoltage across the opposite IGBT at turn-on while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage is limited much effectively at the larger collector current. The turn-on scheme is to decrease the rising rate of the collector current by increasing input capacitance during turn-on transient when the gate-emitter voltage is greater than threshold voltage. The experimental results under various normal and fault conditions prove the effectiveness of the proposed circuit.

• Tribology and Lubricants
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• 제31권3호
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• pp.125-140
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• 2015

In this paper, we present the results of the wear analysis of journal bearings on a stripped-down single-cylinder engine during start-up and coast-down by motoring. We calculate journal bearing wear by using a modified specific wear rate considering the fractional film defect coefficient and load-sharing ratio for the asperity portion of a mixed elastohydrodynamic lubrication (EHL) regime coupled with previously presented graphical data of experimental lifetime linear wear in radial journal bearings. Based on the calculated wear depth, we obtain a new oil film thickness for every crank angle. By examination of the oil film thickness, we determine whether the oil film thickness at the wear scar region is in a mixed lubrication regime by comparing dimensionless oil film thickness, h/σ, to 3.0 at every crank angle. We present the lift-off speed and the crank angles involved with the wear calculation for bearings #1 and #2. The dimensionless oil film thickness, h/σ, illustrates whether the lubrication region between the two surfaces is still within the bounds of the mixed lubrication regime after scarring of the surface by wear. In addition, we present in tables the asperity contact pressure, the real minimum film thickness at the wear scar region, the modified specific wear rate, and the wear angle, α, for bearings #1 & #2. To show the real shape of the oil film at wear scar region, we depict the actual oil film thickness in graphs. We also tabulated the ranges of bearing angles related with wear scar. We present the wear volume for bearings #1 and #2 after one turn-on and turn-off of the engine ignition switch for five kinds of equivalent surface roughness. We show that the accumulated wear volume after a single turn-on and turn-off of an ignition switch normally increases with increasing surface roughness, with a few exceptions.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.139-142
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• 2006

This paper describes a new method using random modulated strategies for switched reluctance machines. The proposed method is combined random turn-on, turn-off angle technique and random pulse width modulation technique. The purpose of this proposed method is to decrease harmonic spectrum, and thus reduce the emitted acoustical noise. A random generator is generated by linear congruential generator (LCG) using random pulse position (RPP) scheme. Simulation results show that the harmonic intensity of proposed method is better than that of conventional method.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2000년도 전력전자학술대회 논문집
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• pp.701-704
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• 2000

A SRG(Switched Reluctance Generator) has many advantages such as efficiency simple controllability low cost and robustness compared with outer machines. But the theories that have been adopted as SRG control methods up to the present are complicated. This paper proposes a simple control methods using PID which controls only a turn-off angle while making turn-on angle signals of SRG constant. controlling the voltage differences between the reference and the real value and calculating the proper turn-off angle of the load variations can implement to keep the output voltage constant. the control method suggested in this paper enhances the efficiency of this system and simplifies the hardware and software by using only the voltage and speed sensors. The proposed method is verified by experiment

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1023_1024
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• 2009

In this paper, a novel 10kV, 50A, 50kHz pulsed power supply based on IGBT stacks is proposed. Proposed scheme consists of series connected 12 IGBT to generate maximum 10kV output pulse and 10kW full bridge phase-shifted zero voltage switching converter to charge DC capacitor voltage. Each IGBTs are sustain the 830V of capacitor voltage at turn off interval. By turn on the each IGBT for the same time it gives the path for the series connection of charged capacitor. From above turn on and off procedure, high voltage repetitive pulse is applied to the load. The synchronization of gating signal is important of series operation of IGBTs. For gating signal synchronization, specially designed gate power circuit using full bridge inverter and pulse transformer is developed to generate IGBT gating signal.

• 조명전기설비학회논문지
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• 제25권3호
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• pp.40-49
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• 2011

This paper presents novel circuit topology of half-bridge soft-switching PWM inverter type DC-DC high power converter for DC bus feeding power plants. The proposed DC-DC power converter is composed of a typical voltage source-fed, half-bridge high frequency PWM inverter with a high frequency planar transformer link PWM control scheme and parallel capacitive lossless snubbers. The operating principle of the new DC-DC converter treated here is described by using switching mode-equivalent circuits, together with its unique features. All the active power switches in the half-bridge arms and input DC bus lines can achieve ZCS turn-on and ZVS turn-off commutation transitions. The total turn-off switching losses of the power switches can be significantly reduced. As a result, high switching frequency IGBTs can actually be selected in the frequency range of 40[kHz] under the principle of soft-switching. The performance evaluations of the experimental setup are illustrated practically.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1999년도 전력전자학술대회 논문집
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• pp.663-666
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• 1999

This paper describes a three-phase converter with high power factor using a scheme of discontinuous current mode(DCM). The proposed system can replace the conventional diode bridge with step-up chopper which is used as a converter for adjustable speed drive. In this system, the current of reactor is zero at turn-on instance because of operation in DCM, while the switch turns off at the instance of maximum current. A soft-switching scheme with lossless snubber was proposed. Therefore, a zero-voltage switching at turn off can be achived by lossless snubber and zero-current switching at turn on can be obtained by operating under DCM. A theoretical analysis and computer simulations with PSpice were done to verify the operation of the proposed system. Also a prototype of hardware system was built and tested for verifying the feasibility of proposed system.

• 전기저널
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• 통권255호
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• pp.76-83
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• 1998

대용량 파워일렉트로닉스기기의 보다 대용량화$\cdot$소형경량화 및 저손실화 요구에 응하기 위하여 조지전압 4.5KV, 가제어전류 4KA의 고내압$\cdot$대용량 CGT(gate commutated turn-off : 게이트 전류형 턴오프) 사이리스터를 개발하여 상품화하였다. GCT사이리스터는 대용량 파워일렉트로닉스기기의 키파트로서 폭넓게 사용되고 있는 GTO(Gate turn-off)사이리스터와 Turn-on동작이 같고 gto사이리스터의 이점이 저On전압특성을 그대로 갖는 한편 턴오프동작은 ''턴오프 게인이 1''인 새로운 원리에 기초하고 있으며 턴오프특성에서는 GTO사이리스터에 비해 다음과 같은 특징을 갖고있다. (1)GTO사이리스터응용에서 턴오프시 dv/dt를 억제하기 위하여 필요한 스나버회로가 없어도 턴오프동작이 가능하다. (2)축적시간을 종래 GTO사이리스터의 약 1/10로 저감할 수 있다. (3)게이트축적전하를 종래의 GTO사이리스터의 약 1/2로 저감할 수 있다. 이러한 턴오프특성에 의하여 GCT사이리스터는 대용량 파워 일렉트로니스기기에 스나버회로 손실발생의 억제에 의한 손실의 저감, 고속동작화, 직병렬접속 응용에 의한 대용량화의 용이성, 게이트구동회로의 용량을 반감하는 등 많은 메리트를 가져다 준다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 B
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• pp.1061-1062
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• 2006

This paper represent improved On-line Turn off, commutation Angle control schemes for switched reluctance motors based on current control. For the purpose of the finding optimal commutation switching angle point, it is utilized turn on and turn off position calculation with inductance vs. current vs. flux linkage analysis method. The goal of proposed paper is the maximization of the energy conversion per stroke and maximizing efficiency and obtaining approximately flat-topped current waveform. The proposed control scheme is demonstrated on a simulation experimental result.