• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제53권12호
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• pp.751-758
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• 2004

This paper presents a new method to compensate the non-linearity for matrix converter drives using PQR instantaneous Power theory. The non-linearity of matrix converter drives such as commutation delay, turn-on and turn-off time of switching device, and on-state switching device voltage drop is modelled by PQR power theory and compensated using a reference current control scheme. The proposed method does not need any additional hardware and off-line experimental measurements. The proposed compensation method is applied for high performance induction motor drives using a 3 kW matrix converter system without a speed sensor. Simulation and experimental results show the proposed method using PQR power theory Provides good compensating characteristic.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.1103-1104
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• 2008

In this paper, authors propose a novel step-up AC-DC chopper operated with power factor correction (PFC) and with high efficiency. The proposed chopper behaves with discontinuous current control (DCC) of input current. The input current waveform in the proposed chopper is got to be a discontinuous sinusoid form in proportion to magnitude of ac input voltage under the constant duty cycle switching. Therefore, the input power factor is nearly unity and the control method is simple. In the general DCC chopper, the switching devices are turned-on with the zero current switching, but turn-off of the switching devices is switched at current maximum value. To achieve a soft switching of the switching turn-off, the proposed chopper is used a new partial resonant circuit. The result is that the switching loss is very low and the efficiency of chopper is high.

• 전기저널
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• 통권277호
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• pp.69-77
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• 2000

최근 전력설비 운용상의 여러 가지 과제에 대한 유망한 해결책으로서 파워일렉트로닉스 기기를 사용한 FACTS(Flexible AC Transmission System)가 주목을 받고 있다. 그 중에서도 자려식 변환기를 사용한 FACTS기기는 계통의 유효전력$\cdot$무효전력을 계통의 상태에 의존하지 않고 자유롭게 제어할 수 있어, 계통운용의 유연성을 비약적으로 확대할 수 있는 가능성이 있다. 미쓰비시전기는 전력기기간 계통에서의 자려식 변환기 응용의 파이어니어로서 1991년 간사이전력(주) 태산개폐소에 80Mvar SVG(전지형 무효전력발생장치)를 납품하였으며 또한 자원에너지청의 ''연계강화기술개발'' 보조사업으로 도쿄전력(주)을 비롯하여 전력회사 각사, 전원개발(주)와 (재)전력중앙연구소의 지도 하에 3단자 BTB(Back to Back) 실증시스템용으로 세계 최초의 6인치 GTO(Gate Turn-off Thyristor)를 사용한 53MVA의 자려식 변환기를 제작납품하여 수백MVA 클래스의 자려식변환기 제작기술을 확립하였다. 또한 최근에는 동사가 개발한 신소자 GCT(Gate Commutated Turn-off Thyristor)는 지금까지 대용량 자려식 변환기의 커다란 과제였던 운전손실을 반감할 수 있을 것으로 기대되고 있다. 한편 배전 분야에서는 전압변동, 고조파, 순간전압강하 등의 과제가 증가하고 있어, 미쓰비시전기는 이에 응할 수 있는 파워일렉트로닉스 기기로서 콤팩트 SVG(Static Var Generator), SSTS(Solid-state Transfer Switch), 액티브필너를 다수 납품하여 전력품질문제 해결에 공헌하고 있다.

• 전자공학회논문지A
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• 제32A권12호
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• pp.122-129
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• 1995

The most important feature of a-Si TFT is dense localized states such as dangling bonds which exist in tis bandgap. Electrons trapped by localized states dominate the potential distribution in the active a-Si region ,and influence the performance of a-Si TFT. In this paper, we describe the electrical characteristics of a-Si TFT with respect to trap distribution within bandgap, electron mobility and interface states using 2-Dimensional device simulator and compare the result of simulation with measurements. Using the mixed-mode simulator, we can predict the potential variation of pixel which causes residual image problem during the turn-off of a-Si TFT driving circuit. Therefore it is possible to consider trade-off between potential variation of pixel and turn-on current of a-Si TFT for the optimized driving circuit.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2002년도 전력전자학술대회 논문집
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• pp.759-762
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• 2002

A ZCT(Zero Current Transition) PWM(Pulse-Width-Modulation) boost converter using parallel MOSFET switch is proposed in this paper. The IGBT(main switch) of the proposed converter is always turned on with zero current switching and turned off with zero current/zero voltage switching. The MOSFET(auxiliary switch) is also operates with soft switching condition. In addtion to, the proposed converter eliminates the reverse recovery current of the freewheeling diode by adding the resonant inductor, Lr, in series with the main switch. Therefore, the turn on/turn off switching losses of switches are minimized and the conduction losses by using IGBT switch are reduced. In addition to, using parallel MOSFET switch overcomes the switching frequency limitation occurred by current tail. As mentioned above, the characteristics are verified through experimental results.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 전력전자학술대회 논문집
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• pp.413-417
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• 1998

In order to obtain better performance for a SRM(switched reluctance motor) drive, the commutation from one phase to another must be as fast as possible. In this paper a novel converter for SRM drive is proposed, which can accelerate the turn-off and turn-on time by using two capacitors to form a resonant circuit with the motor inductance. Two capacitors recover rapidly stored energy in the off going phase and establish rapidly the current rising in the on going phase. As a result, the current tail can be shortened and the dwell angle in the positive torque region can be extended. And comparing with the asymmetric converter, this converter has higher energy availability in energy conversion process and less number of switches.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.312-315
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• 2003

Basic design of RC-GCTs (Reserve-Conducting Gate-Commutated Thyristors) by novel punch-through (PT) concept with 5,500v rated voltage is described here. A PT and NPT (non punch-through) concept for the same blocking voltage has been compared in detail. The simulation work indicates that GCT with such PT design exhibits that the forward breakdown voltage is 6,400V which is enough for supporting 5500V blocking. Additionally, the real IGCT turn-off in the mode of PNP transistor has been realized. However, the carrier extraction from N-base to gate terminal will be drastic slowly in terms of NPT structure except for the high on-state voltage drop.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제48권2호
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• pp.83-88
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• 1999

Series connection of power semiconductor devices is selected in high voltage and high power applications. It is important to prevent the overvoltage from being induced across a device above ratings by the proper voltage balancing in the field of IGBT series connection. In addition, the overvoltage induced by a stray inductance has to be limited in the high power circuit. This paper proposes a new gate control scheme which can balance the voltage properly and limit the overshoot by controlling the slope of collector voltage under the turn-off transient in the series connected IGBTs. The proposed gate control scheme changes the slope of collector voltage by sensing the collector voltage and controlling the gate signal actively. The new series connected IGBT gate driver is made and its validity is verified by the experimental results for series connected IGBT circuit.

• 대한전기학회논문지
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• 제45권2호
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• pp.230-234
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• 1996

A new trenched Hybrid Schottky INjection Field Effect Transistor (HSINFET) is proposed and verified by 2-D semiconductor device simulation. The feature of the proposed structure is that the hybrid Schottky injector is implemented at the trench sidewall and p-n junction injector at the upper sidewall and bottom of a trench. Two-dimensional simulation has been performed to compare the new HSINFET with the SINFET, conventional HSINFET and lateral insulated gate bipolar transistor(LIGBT). The numerical results shows that the current handling capability of the proposed HSINFET is significantly increased without sacrificing turn-off characteristics. The proposed HSINFET exhibits higher latch-up current density and much faster switching speed than the lateral IGBT. The forward voltage drop of the proposed HSINFET is 0.4 V lower than that of the conventional HSINFET and the turn-off time of the trenched HSINFET is much smaller than that of LIGBT.

• Journal of Power Electronics
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• 제12권5호
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• pp.708-714
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• 2012

This paper presents a new interleaved pulse-width modulation (PWM) boost-flyback converter to achieve power factor correction (PFC) and regulate DC bus voltage. The adopted boost-flyback converter has a high voltage conversion ratio to overcome the limit of conventional boost or buck-boost converter with narrow turn-off period. The proposed converter has wide turn-off period compared with a conventional boost converter. Thus, the higher output voltage can be achieved in the proposed converter. The interleaved PWM can further reduce the input and output ripple currents such that the sizes of inductor and capacitor are reduced. Since boundary conduction mode (BCM) is adopted to achieve power factor correction, power switches are turned on at zero current switching (ZCS) and switching losses are reduced. The circuit configuration, principle operation, system analysis, and design consideration of the proposed converter are presented in detail. Finally, experiments conducted on a laboratory prototype rated at 500W were presented to verify the effectiveness of the converter.