• Transactions on Electrical and Electronic Materials
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• v.11 no.6
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• pp.271-274
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• 2010

We examined the tunneling current behaviors of magnetic tunneling junction (MTJ) cells utilizing conductive atomic force microscopy (AFM) interfaced with an external magnetic field generator. By introducing current through coils, a magnetic field was generated and then controlled by a current feedback circuit. This enabled the characterization of the tunneling current under various magnetic fields. The current-voltage (I-V) property was measured using a contact mode AFM with a metal coated conducting cantilever at a specific magnetic field intensity. The obtained magnetoresistance (MR) ratios of the MTJ cells were about 21% with no variation seen from the different sized MTJ cells; the value of resistance $\times$ area (RA) were 8.5 K-12.5 K $({\Omega}{\mu}m^2)$. Since scanning probe microscopy (SPM) performs an I-V behavior analysis of ultra small size without an extra electrode, we believe that this novel characterization method utilizing an SPM will give a great benefit in characterizing MTJ cells. This novel method gives us the possibility to measure the electrical properties of ultra small MTJ cells, namely below $0.1\;{\mu}m\;{\times}\;0.1\;{\mu}m$.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.119-124
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• 2015

This paper investigates the change of the percolation threshold in the carbon powder-filled polystyrene matrix composites based on the experimental results of changes in the resistivity and relative permittivity of the carbon powder filling, the electric field dependence of the current, and the critical exponent of conductivity. In this research, the percolation behavior, the critical exponent of resistivity, and electrical conduction mechanism of the carbon powder-filled polystyrene matrix composites are discussed based on a study of the overall change in the resistivity. It was found that the formation of infinite clusters is interrupted by a tunneling gap in the volume fraction of the carbon powder filling, where the change in the resistivity is extremely large. In addition, it was found that the critical exponent of conductivity for the universal law of conductivity is satisfied if the percolation threshold is estimated at the volume fraction of carbon powder where non-ohmic current behavior becomes ohmic. It was considered that the mechanism for changing the gaps between the carbon powder aggregates into ohmic contacts is identical to that of the connecting conducting phases above the percolation threshold in a random resister network system. The electric field dependence is discussed with a tunneling mechanism. It is concluded that the percolation threshold should be defined at this volume fraction (the second transition of resistivity for the carbon powder-filled polystyrene matrix composites) of carbon powder.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.141-146
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• 2017

In this letter, we propose the use of tunneling field effect transistors (TFET) as a biosensor that detects bio-molecules on the gate oxide. In TFET sensors, the charges of target molecules accumulated at the surface of the gate oxide bend the energy band of p-i-n structure and thus tunneling current varies with the band bending. Sensing parameters of TFET sensors such as threshold voltage ($V_t$) shift and on-current ($I_D$) change are extracted as a function of the charge variation. As a result, it is found that the performances of TFET sensors can surpass those of conventional FET (cFET) based sensors in terms of sensitivity. Furthermore, it is verified that the simultaneous sensing of two different target molecules in a TFET sensor can be performed by using the ambipolar behavior of TFET sensors. Consequently, it is revealed that two different molecules can be sensed simultaneously in a read-out circuit since the multi-sensing is carried out at equivalent current level by the ambipolar behavior.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.546-550
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• 2013

We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over $10^4$ at low operation voltage of 0.5 V in a single peak and valley current.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.21-21
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• 2003

Microstructure and magnetic transport phenomina in rf sputtered AlN/Co type ten-layered discontinuous films of nanoscaled [AlN (3 nm)/Co (t nm)]...$\sub$10/ with t$\sub$Co/=1.0∼2.0 nm have been investigated. The microstructure and tunneling magnetic resistance of the samples are strongly dependent on the thickness of Co layer. Negative tunneling magneto-resistance due to the spin-dependent transport has been observed along the current-in-plane configuration in the samples having the Co layers below 1.6 nm thick. When the thickness of Co layer was less than 1,2 nm, randomly oriented granular Co particles were completely isolated and embedded in amorphous AlN matrix, and the films showed the superparamagnetic behavior with a high MR value of Δ$\rho$/$\rho$$\sub$0/=1.8 %. As t$\sub$Co/ increases, a transition from the regime of co-existence of superparamagnetic and ferromagnetic behaviors to ferromagnetic behavior was observed. Tunneling barrier called "decay length for tunneling" for the films having the thickness of Co layer from 1.4 to 1.6 nm was measured to be ranged from 0.004 to 0.021 ${\AA}$$\^$-1/.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.11
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• pp.934-940
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• 2001

Magnetic properties were investigated for Si/SiO$_2$/NiFe(300 )/A1$_2$O$_3$(t)/Co(200 ) junction related with the parameters of $Al_2$O$_3$. Insulating $Al_2$O$_3$ layer was formed by depositing a 5~40 thick Al layer, followed by a 90~120s RF plasma oxidation in an $O_2$ atmosphere. Magnetoresistance was not observed for tunnel junction with 5~10 thick Al layer, but magnetoresistance was observed large for tunnel junction with 15~40 thick Al layer. Oxidation time did not largely influence magnetoresistance. Tunnel magnetoresistance effect depended on magnetization behavior of two ferromagnetic layers. Tunneling junction was confirmed through nonlinear I-V curve. In this work, tunneling magnetoresistance(TMR) up to 30 % was observed. This apparent TMR is an artifact of the nonuniform current flow over the junction in the cross geometry of the electrodes.

• Journal of Electrical Engineering and information Science
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• v.2 no.6
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• pp.208-211
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• 1997

We have fabricated a single-electron-tunneling(SET) transistor with a dual gate geometry based on the SOI structure prepared by SIMOX wafers. The split-gate is the lower-gate is the lower-level gate and located ∼ 100${\AA}$ right above the inversion layer 2DEG active channel, which yields strong carrier confinement with fully controllable tunneling potential barrier. The transistor is operating at low temperatures and exhibits the single electron tunneling behavior through nano-size quantum dot. The Coulomb-Blockade oscillation is demonstrated at 15mK and its periodicity of 16.4mV in the upper-gate voltage corresponds to the formation of quantum dots with a capacity of 9.7aF. For non-linear transport regime, Coulomb-staircases are clearly observed up to four current steps in the range of 100mV drain-source bias. The I-V characteristics near the zero-bias displays typical Coulomb-gap due to one-electron charging effect.

• Journal of Magnetics
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• v.8 no.2
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• pp.98-102
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• 2003

Microstructure and magnetic transport phenomina in rf sputtered AIN/CO type ten- layered discontinuous films of nanoscaled [AIN(3 nm)/Co(t nm)]…$_10$ with t$_Co$=1.0∼2.0 nm have been investigated. The microstructure and tunneling magnetic resistance of the samples are strongly dependent on the thickness of Co layer, Negative tunneling magneto-resistance due to the spin-dependent transport has been observed along the current-in-plane configuration in the samples having the Co layers below 1.6 nm thick. When the thickness of Co layer was less than 1.2 nm, randomly oriented granular Co particles were completely isolated and embedded in amorphous AIN matrix, and the films showed the superparamagnetic behavior with a high MR value of ${\Delta}p/p_0$=1.8%. As t$_Co$ increases, a transition from the regime of co-existence of superparamagnetic and ferromagnetic behaviors to ferromagnetic behavior was observed. funneling barrier called “decay length far tunneling” fur the films haying the thickness of Co layer from 1.4 to 1.6 nm was measured to be ranged from 0.004 to 0.021 ${\AA}$$^{-1}$.

• Korean Journal of Materials Research
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• v.20 no.5
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• pp.271-277
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• 2010

In this paper two aspects of the percolation and conductivity of carbon black-filled polyethylene matrix composites will be discussed. Firstly, the percolation behavior, the critical exponent of conductivity of these composites, are discussed based on studying the whole change of resistivity, the relationship between frequency and relative permittivity or ac conductivity. There are two transitions of resistivity for carbon black filling. Below the first transition, resistivity shows an ohmic behavior and its value is almost the same as that of the matrix. Between the first and second transition, the change in resistivity is very sharp, and a non-ohmic electric field dependence of current has been observed. Secondly, the electrical conduction property of the carbon black-filled polyethylene matrix composites below the percolation threshold is discussed with the hopping conduction model. This study investigates the electrical conduction property of the composites below the percolation threshold based on the frequency dependence of conductivity in the range of 20 Hz to 1 MHz. There are two components for the observed ac loss current. One is independent of frequency that becomes prevalent in low frequencies just below the percolation threshold and under a high electrical field. The other is proportional to the frequency of the applied ac voltage in high frequencies and its origin is not clear. These results support the conclusion that the electrical conduction mechanism below the percolation threshold is tunneling.

• Journal of Magnetics
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• v.8 no.1
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• pp.24-31
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• 2003

The discoveries of antiferromagnetic coupling in Fe/Cr multilayers by Grunberg, the Giant Magneto Resistance by Fert and Grunberg and a large tunneling magnetoresistance at room temperature by Moodera have triggered enormous research on magnetic thin films and magnetoelectronic devices. Large opportunities are especially opened by the spin dependent tunneling resistance, where a strong dependence of the tunneling current on an external magnetic field can be found. We will briefly address important basic properties of these junctions like thermal, magnetic and dielectric stability and discuss scaling issues down to junction sizes below 0.01 $\mu\textrm{m}$$^2$with respect to single domain behavior, switching properties and edge coupling effects. The second part will give an overview on applications beyond the use of the tunneling elements as storage cells in MRAMs. This concerns mainly field programmable logic circuits, where we demonstrate the clocked operation of a programmed AND gate. The second 'unconventional' feature is the use as sensing elements in DNA or protein biochips, where molecules marked magnetically with commercial beads can be detected via the dipole stray field in a highly sensitive and relatively simple way.