• Journal of Digital Convergence
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• v.15 no.1
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• pp.209-216
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• 2017

The merits and demerits of the chaebol in Korea has been subjected to considerable debate in recent years. In accounting research, many papers have been concentrating on tunneling that be designated as expropriation of minority shareholders by controlling shareholders. Although majority previous paper suggested related-party transaction has a negative effect to firm value, some research on related-party transaction argued it has a positive effect, also. We assume that they can't consider compositive meaning of related-party transaction and result of prior studies are mixed. In this setting, we investigate the relation between earnings management and related-party transaction which be known as strategy for tunneling by considering controlling shareholder's ownership.

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1654-1659
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• 2014

Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current ($I_{off}$) and small subthreshold swing (S). However, low on-current ($I_{on}$) of silicon-based TFETs has been pointed out as a drawback. To improve $I_{on}$ of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction structure is proposed and investigated. Its performances have been evaluated with the gallium (Ga) composition (x) for $In_{1-x}Ga_xAs$ in the channel region. According to the simulation results for $I_{on}$, $I_{off}$, S, and on/off current ratio ($I_{on}/I_{off}$), the device adopting $In_{0.53}Ga_{0.47}As$ channel showed the optimum direct-current (DC) performance, as a result of controlling the Ga fraction. By introducing an n-type InGaAs thin layer near the source end, improved DC characteristics and radio-frequency (RF) performances were obtained due to boosted band-to-band (BTB) tunneling efficiency.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.800-803
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• 2002

The MONOS capacitor are fabricated to investigate the carrier trapping due to Fowler-Nordheim tunneling injection. The carrier trapping in scaled multi-dielectric(ONO) depends on the nitride and Op oxide thickness under Fowler_Nordheim tunneling injection. Carriers captured at nitride film could not escape from nitride to gate, but be captured at top oxide and nitride interface traps because of barrier height of top oxide. Therefore, it is expected that the MONOS memory devices using multi dielectric films enhance memory effect and have a long memory retention characteristic.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.23 no.9
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• pp.841-849
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• 2013

Workers engaged in construction works have been exposed to high levels of noise during their work in tunnels. Noise is one of the major health hazards for employees working in construction sites. The aim of this study is to evaluate the noise levels generating from tunneling equipments such as jumbo drills, backhoes, payloaders, shotcrete machines and service cars. Explosion and turbo fan noises were also monitored. A high precision sound level meter was introduced for measuring LAeq, LAFmax, LAFmin and LCpeak noises in 5 tunneling work sites that were located in Seoul, Kyunggi-do and Kangwon-do areas with NATM and shield methods. The highest noise was recorded by explosion(151.9 dB LCpeak) followed by jumbo drills of higher than 110 dB(A) LAeq. Backhoe normally generated 90~110 dB(A) LAeq while breaking work of rock showed additional around 5~15 dB(A). Noise exposure levels for payloader and shotcrete machine scored more than 90 dB(A) which might be a source of noise-induced hearing loss. Additional research in revealing noise levels from construction equipments operating in tunneling works may enhance the protection of workers who exposed to noise primarily at the sites.

• Journal of the Korean Magnetics Society
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• v.3 no.1
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• pp.29-33
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• 1993

Magnetoresistance was studied for the ferromagnetic tunneling junction in $Permalloy/Al_{2}O_{3}/Co$ prepared by evaporation in a vacuum of $1{\times}10^{-6}$Torr. We measured voltage-current characteristic and magnetic valve effect of prepared ferromagnetic tunneling junction sample. We investigated field-dependency of tunnel resistance by Wheat-stone bridge method and measured magnetic hysteresis curve by vibrating sample magnetometer. The tunneling is confirmed by measuring voltage-current characteristic. The hysteresis curve of magnetoresistance corresponds well with that of magnetization. The magnetoresistance ratio ${\Delta}R/R$ is 0.6% at room temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.11
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• pp.934-940
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• 2001

Magnetic properties were investigated for Si/SiO$_2$/NiFe(300 )/A1$_2$O$_3$(t)/Co(200 ) junction related with the parameters of $Al_2$O$_3$. Insulating $Al_2$O$_3$ layer was formed by depositing a 5~40 thick Al layer, followed by a 90~120s RF plasma oxidation in an $O_2$ atmosphere. Magnetoresistance was not observed for tunnel junction with 5~10 thick Al layer, but magnetoresistance was observed large for tunnel junction with 15~40 thick Al layer. Oxidation time did not largely influence magnetoresistance. Tunnel magnetoresistance effect depended on magnetization behavior of two ferromagnetic layers. Tunneling junction was confirmed through nonlinear I-V curve. In this work, tunneling magnetoresistance(TMR) up to 30 % was observed. This apparent TMR is an artifact of the nonuniform current flow over the junction in the cross geometry of the electrodes.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.390-390
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• 2010

Superconducting proximity effects of Nb/Si(111) were investigated with scanning tunneling microscopy(STM) and scanning tunneling spectroscopy(STS). A highly-doped($0.002\;{\omega}{\diamondsuit}cm$) Si wafer pieces were used as substrate and Nb source was thermally evaporated onto the atomically clean silicon substrate. The temperature of the silicon sample was held at $600^{\circ}C$ during the niobium deposition. And the sample was annealed at $600^{\circ}C$ for 30 minutes additionally. Volmer-Weber growth mode is preferred in Nb/Si(111) at the sample temperature of $600^{\circ}C$. With proper temperature and annealing time, we can obtain Nb islands of lateral size larger than Nb coherence length(~38nm). And outside of the islands, bare Si($7{\times}7$) reconstructed surface is exposed due to the Volmer-Weber Growth mode. STS measurement at 5.6K showed that Nb island have BCS-like superconducting gap of about 2mV around the Fermi level and the critical temperature is calculated to be as low as 6.1K, which is lower than that of bulk niobium, 9.5K. This reduced value of superconducting energy gap indicates suppression of superconductivity in nanostructures. Moreover, the superconducting state is extended out of the Nb island, over to bare Si surface, due to the superconducting proximity effect. Spatially-resolved scanning tunneling spectroscopy(SR-STS) data taken over the inside and outside of the niobium island shows gradually reduced superconducting gap.

• Journal of the Korean institute of surface engineering
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• v.32 no.1
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• pp.61-66
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• 1999

The Spin-dependent tunneling magnetoresistance (TMR) effect was observed in $NiFe/Al_2O_3$/Co thin films. The samples were prepared by magnetron sputtering in a system with a base pressure of $3\times10^{-6}$Torr. the insulating $Al_2O_3$layer was prepared by r.f. plasma oxydation method of a metallic Al layer. The ferromagnetic and insulating layers were deposited through metallic masks to produce the cross pattern form. The junction has an active area of $0.3\times0.3\textrm{mm}^2$ and the $Al_2O_3$layer is deposited through a circular mask with a diameter of 1mm. It is very important that insulating layer is formed very thinly and uniformly in tunneling junction. The ferromagnetic layer was fabricated in optimum conditions and the surface of that was very flat, which was observed by AFM. Tunneling junction was confirmed through nonlinear I-V curve. $NiFe/Al_2O_3$/Co junction was observed for magnetization behavior and magnetoresistance property and magnetoresistance property is dependent on magnetization behavior and magnetoresistance property and magnetoresistance property is dependent on magnetization behavior of t재 ferromagnetic layer. The maximum magnetoresistance ratio was about 6.5%.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.630-634
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• 2016

We report the computer aided design results for a GaSb/InAs broken-gap gate all around nanowire tunneling FET (TFET). In designing, the semi-empirical tight-binding (TB) method using $sp3d5s^*$ is used as band structure model to produce the bulk properties. The calculated band structure is cooperated with open boundary conditions (OBCs) and a three-dimensional $Schr{\ddot{o}}dinger$-Poisson solver to execute quantum transport simulators. We find an device configuration for the operation voltage of 0.3 V which exhibit desired low sub-threshold swing (< 60 mV/dec) by adopting receded gate configuration while maintaining the high current characteristic ($I_{ON}$ > $100 {\mu}A/{\mu}m$) that broken-gap TFETs normally have.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.3
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• pp.139-144
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• 2003

We report the results of extensive mixed mode simulations and theoretical analysis to quantify the contribution of the edge direct tunneling (EDT) current on the total gate leakage current of 80nm NMOSFET with SiO2 gate dielectric. It is shown that EDT has a profound impact on basic analog circuit building blocks such as sample-hold (S/H) circuit and the current mirror circuit. A transistor design methodology with zero gate-source/drain overlap is proposed to mitigate the EDT effect. This results in lower voltage droop in S/H application and better current matching in current mirror application. It is demonstrated that decreasing the overlap length also improves the basic analog circuit performance metrics of the transistor. The transistor with zero gate-source/drain overlap, results in better transconductance, input resistance, output resistance, intrinsic gain and unity gain transition frequency.