• 한국지반공학회논문집
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• 제20권3호
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• pp.33-46
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• 2004

본 논문에서는 지하수가 터널굴착에 미치는 영향을 고찰하였다. 먼저 지하수위 아래에서의 터널시공시 발생하는 기본 메카니즘을 알아보았으며 가상의 시공조건에 대해 유한요소해석 기반의 3차원 응력-간극수압 연계해석을 수행하고 그 결과를 토대로 라이닝 작용하중 및 유발응력, 막장안정성, 지표침하 등 지하수와 터널굴착의 상호관계를 고찰하였다. 한편, 다양한 라이닝 투수성 및 그라우팅 패턴에 대한 해석을 수행하고 전반적인 터널 및 주변지반의 거동을 분석하였다. 해석 결과 터널굴착과 지하수의 상호작용은 라이닝 응력과 지반거동을 증가시키며 이러한 지하수가 터널굴착에 미치는 영향은 연계해석을 통해서 만이 이해가 가능하며 전응력해석을 수행할 경우 지하수의 영향을 과소평가할 수 있는 것으로 나타났다. 한편, 본 해석에서 얻어지는 결과를 실무적 측면에서 다각도로 고찰하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권1호
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• pp.40-49
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• 2001

We have developed a repeatable process of forming uniform, small-size and high-density self-assembled Si nano-crystals. The Si nano-crystals were fabricated in a conventional LPCVD (low pressure chemical vapor deposition) reactor at $620^{\circ}c$ for 15 sec. The nano-crystals were spherical shaped with about 4.5 nm in diameter and density of $5{\times}l0^{11}/$\textrm{cm}^2$. More uniform dots were fabricated on nitride film than on oxide film. To take advantage of the above-mentioned characteristics of nitride film while keeping the high interface quality between the tunneling dielectrics and the Si substrate, nitride-oxide tunneling dielectrics is proposed in n-channel device. For the first time, the single electron effect at room temperature, which shows a saturation of threshold voltage in a range of gate voltages with a periodicity of ${\Delta}Ｖ_{GS}\;{\approx}\;1.7{\;}V$, corresponding to single and multiple electron storage is reported. The feasibility of p-channel nano-crystal memory with thin oxide in direct tunneling regime is demonstrated. The programming mechanisms of p-channel nano-crystal memory were investigated by charge separation technique. For small gate programming voltage, hole tunneling component from inversion layer is dominant. However, valence band electron tunneling component from the valence band in the nano-crystal becomes dominant for large gate voltage. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권1호
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• pp.141-146
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• 2017

In this letter, we propose the use of tunneling field effect transistors (TFET) as a biosensor that detects bio-molecules on the gate oxide. In TFET sensors, the charges of target molecules accumulated at the surface of the gate oxide bend the energy band of p-i-n structure and thus tunneling current varies with the band bending. Sensing parameters of TFET sensors such as threshold voltage ($V_t$) shift and on-current ($I_D$) change are extracted as a function of the charge variation. As a result, it is found that the performances of TFET sensors can surpass those of conventional FET (cFET) based sensors in terms of sensitivity. Furthermore, it is verified that the simultaneous sensing of two different target molecules in a TFET sensor can be performed by using the ambipolar behavior of TFET sensors. Consequently, it is revealed that two different molecules can be sensed simultaneously in a read-out circuit since the multi-sensing is carried out at equivalent current level by the ambipolar behavior.

• Asia Marketing Journal
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• 제16권3호
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• pp.77-100
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• 2014

Many researchers have analyzed the relationship between the financial success patterns of a motion picture and many other factors, such as the production cost, marketing, stars, awards, reviews, genre, and rating. Through these studies, many researchers and investors concluded that big budgets to make a blockbuster movie can serve as an insurance policy to meet their ROI; thus the box office is dominated by blockbuster movies. High-budget blockbuster movies are more likely to receive attention because these movies are more recognizable given their high expenses for production and casting. Therefore, audiences choose blockbusters in an effort to reduce the searching cost and to mitigate the possibility of a regrettable choice. This behavior of consumers, in turn, causes distributors to allocate screens for blockbusters, resulting in "concentration of blockbuster consumption." As such, low-budget films cannot easily become popular due to the lack of distribution. Indeed, low-budget films released on a small number of screens often end up becoming dismal failures. However, there are exceptional examples which are contrary to the general idea in the movie industry that a big budget and showings on a large number of screens can guarantee the success of a movie. Although researchers have attempted to analyze the performances of movies with small budgets, such movies are likely to be regarded as outliers and then be entirely discarded, as they are far from the 'three-sigma' range, especially given that previous research methodologies could not explain the financial success of such unique examples. This study attempts to explain the financial success at the box office of low-budget movies by applying the concept of the tunnel effect in quantum mechanics, as the phenomenon found in the movie industry is similar to a particle's movement in quantum physics. The tunneling effect is a phenomenon by which a particle without enough energy to pass over a potential barrier tunnels through it. Adopting the analogy, this study draws a tunneling probability function and cultural constant to forecast other outliers using the Schrödinger equation. Moreover, the study finds that word-of-mouth creates in the movie industry this phenomenon of finding outliers.

• 한국자기학회지
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• 제11권5호
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• pp.202-210
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• 2001

자연산화 $Al_2$O$_3$층이 형성된 하부형태 터널링 자기저항 다층박막이 기본진공도 $10^{-9}$ Torr을 유지하는 UHV 챔버내에서 이온빔 스퍼터링과 dc 마그네트론 스퍼터링 법으로 증착되었다. 제작된 스핀의존터널링 (SDT) 접합소자의 최대 터널링자기저항(TMR)와 최소 접합저항과 면적곱(R$_{j}$ A) 각각 16~17%와 50-60$\Omega$$\mu\textrm{m}$$^2$이었다. 자기장하에서 열처리한 SDT접합에 대한 TMR향상과 (R$_{j}$ A) 감소의 변화는 미미하였다. 접합면적이 81$\mu\textrm{m}$$^2$에서 47$\mu\textrm{m}$$^2$까지 접합크기가 작이짐에 따라 TMR이 증가하고 (R$_{j}$ A)이 감소하는 의존성이 관찰되었다. 이러한 현상을 하부층 단자의 판흐름 저항값 의존효과와 스핀채널효과로 설명하였다.

• 전자공학회논문지
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• 제49권12호
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• pp.179-183
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• 2012

3차원 시뮬레이션을 이용하여 터널링 전계효과 트랜지스터(TFET)의 불순물 분포 변동(RDF) 효과에 대해 살펴보았다. TFET의 RDF 효과는 매우 낮은 바디 도핑 농도 때문에 많이 논의되지 않았다. 하지만 본 논문에서는 임의로 생성되고 분포되는 소스 불순물이 TFET의 문턱전압 ($V_{th}$)과 드레인 유기 전류 증가 (DICE), 문턱전압이하 기울기 (SS)의 변화를 증가시킴을 발견하였다. 또한, TFET의 RDF 효과를 감소시킬 수 있는 몇 가지 방법을 제시하였다.

• 한국터널지하공간학회 논문집
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• 제5권2호
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• pp.175-187
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• 2003

본 논문에서는 3차원 연계해석을 통해 지하수가 터널굴착에 미치는 영향을 고찰하였다. 먼저 국외사례를 토대로 높은 지하수위의 조건에서 터널시공시 발생하는 여러 가지 문제점을 짚어보았다. 아울러서 3차원 응력-간극수압 연계해석을 수행하고 그 결과를 토대로 라이닝 작용하중 및 유발응력, 막장안정성, 지표침하 등을 고찰하였다. 해석 결과 지하수가 터널굴착에 미치는 영향은 연계해석을 통해서 만이 이해가 가능하며 전응력해석을 수행할 경우 지하수의 영향을 과소 평가할 수 있는 것으로 나타났다. 한편, 본 해석에서 얻어지는 결과를 실무적 측면에서 다각도로 고찰하였다.

• 한국재료학회지
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• 제19권12호
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• pp.644-648
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• 2009

Temperature dependency of resistivity of the carbon black-polyethylene composites below and above percolation threshold is studied based on the electrical conduction mechanism. Temperature coefficient of resistance of the composites below percolation threshold changed from minus to plus, increasing volume fraction of carbon black; this trend decreased with increasing volume fraction of carbon black. The temperature dependence of resistivity of the composites below percolation threshold can be explained with a tunneling conduction model by incorporating the effect of thermal expansion of the composites into a tunneling gap. Temperature coefficient of resistance of the composites above percolation threshold was positive and its absolute value increased with increasing volume fraction of carbon black. By assuming that the electrical conduction through percolating paths is a thermally activated process and by incorporating the effect of thermal expansion into the volume fraction of carbon black, the temperature dependency of the resistivity above percolation threshold has been well explained without violating the universal law of conductivity. The apparent activation energy is estimated to be 0.14 eV.

• Bulletin of the Korean Chemical Society
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• 제4권1호
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• pp.28-36
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• 1983

We considered the tunneling effect on the rate constants calculated from transition-state theory for the H + $D_2$ and D + $H_2$ reactions. A method for evaluating the important parameter Ec (potential barrier height) was proposed. A tunnel-effect correlation factor (TECF) ${\Gamma}_{t}exp{\theta}_t$ was estimated from experimental data, and compared with the corresponding values obtained from many theoretical methods. According to our results, the tunneling effect cannot be negligible around $800^{\circ}$K where the TECF value is ca. 0.8 whereas the factor approaches to unity at T > $2400^{\circ}$K where the tunneling completely disappears. In addition to the above fact, we also found that the TECF for the D + $H_2$ reaction is greater than that of the H + $D_2$ reaction in agreement with Garrett and Truhlar's result. In contrast to our result, however, Shavitt found that the order is reversed, i.e., TECF for (D + $H_2$) is greater than that for (H + $D_2$). We discussed about the Shavitt's result.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 학술대회지
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• pp.787-791
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• 2004

We investigated field-effect ion-transport devices based on carbon nanotubes by using classical molecular dynamics simulations under applied external force fields, and we present model schematics that car be applied to the nanoscale data storage devices and unipolar ionic field-effect transistors. As the applied external force field is increased, potassium ions rapidly flow through the nanochannel. Under low external force fields, ther nal fluctuations of the nanochannels affect tunneling of the potassium ions whereas the effects of thermal fluctuations are negligible under high external force fields. Since the electric current conductivity increases when potassium ions are inserted into fullerenes or carbon nanotubes, the field effect due to the gate, which can modify the position of the potassium ions, changes the tunneling current between the drain and the source.