Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2004.08c
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- Pages.787-791
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- 2004
Field-effect Ion-transport Devices with Carbon Nanotube Channels: Schematics and Simulations
- Kwon Oh Kuen (SeMyungUniversity) ;
- Kwon Jun Sik (SeMyungUniversity) ;
- Hwang Ho Jung (Dept of Electronic Engineering, Chung-ang University) ;
- Kang Jeong Won (Dept of Electronic Engineering, Chung-ang University)
- Published : 2004.08.01
Abstract
We investigated field-effect ion-transport devices based on carbon nanotubes by using classical molecular dynamics simulations under applied external force fields, and we present model schematics that car be applied to the nanoscale data storage devices and unipolar ionic field-effect transistors. As the applied external force field is increased, potassium ions rapidly flow through the nanochannel. Under low external force fields, ther nal fluctuations of the nanochannels affect tunneling of the potassium ions whereas the effects of thermal fluctuations are negligible under high external force fields. Since the electric current conductivity increases when potassium ions are inserted into fullerenes or carbon nanotubes, the field effect due to the gate, which can modify the position of the potassium ions, changes the tunneling current between the drain and the source.