• Journal of Electrical Engineering and Technology
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• 제8권6호
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• pp.1481-1486
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• 2013

In this paper, a new two dimensional (2D) analytical model of a Dual Material Gate tunnel field effect transistor (DMG TFET) is presented. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expressions for surface potential and electric field are derived. The electric field distribution can be used to calculate the tunneling generation rate and numerically extract tunneling current. The results show a significant improvement of on-current and reduction in short channel effects. Effectiveness of the proposed method has been confirmed by comparing the analytical results with the TCAD simulation results.

• Geomechanics and Engineering
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• 제15권2호
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• pp.739-744
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• 2018

This paper presents the results of numerical modeling studies on the effect of displacements of tunneling in granular soils. Presence of building loads is considered, to find displacement generated at the surface on tunnel. Effect of varying eccentricities of building is simulated, to find influence of building on vertical and horizontal displacement. Studies were carried out in two cases of with and without a geosynthetic layer installed at the bottom of the footing. Results of analysis revealed, the presence of geosynthetic layer under footing, with building placed on centre line, reduced the surface displacements compared to displacement generated without geosynthetic layer. Presence of geosynthetic layer under footing had a dominant effect in reducing displacements in high storey structures. However, when the building was shifted to greater eccentricities from centre line, presence of geosynthetic layer, led to insignificant reduction of displacements on the centre line at the surface.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권6호
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• pp.551-555
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• 2013

Linearity characteristics of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) have been compared with those of high-k-only and $SiO_2$-only TFETs in terms of IIP3 and P1dB. It has been observed that the optimized HG TFETs have higher IIP3 and P1dB than high-k-only and $SiO_2$-only TFETs. It is because HG TFETs show higher transconductance ($g_m$) and current drivability than $SiO_2$-only TFETs and $g_m$ less sensitive to gate voltage than high-k-only TFETs.

• 반도체디스플레이기술학회지
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• 제5권1호
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• pp.21-25
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• 2006

To improve the performance of organic thin film transistor, we investigated the properties of gate insulator's surface according to the leakage current by I-V measurement. The surface was treated by the dilute n-octadecyltrichlorosilane solution. The alkyl group of n-octadecyltrichlorosilane induced the electron tunneling and the electron tunneling current caused the breakdown at high electric field, consequently shifting the breakdown voltage. The 0.5% sample with an electron-rich group was found to have a large leakage current and a low barrier height because of the effect of an energy barrier lowered by, thermionic current, which is called the Schottky contact. The surface properties of the insulator were analyzed by I-V measurement using the effect of Poole-Frankel emission.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.271-276
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• 2017

The triple-gate tunnel FETs encapsulated with an epitaxial layer (EL TFETs) is proposed to lower the subthreshold swing of the TFETs. Furthermore, the band-to-band tunneling based on the maximum electric-field can occur thanks to the epitaxial layer wrapping the Si fin. The performance and mechanism of the EL TFETs are compared with the previously proposed TFET based on simulation.

• Geomechanics and Engineering
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• 제15권3호
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• pp.823-831
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• 2018

The most important issue during shield TBM tunneling in soft ground formations is to appropriately control ground surface settlement. Among various operational conditions in shield TBM tunneling, the face pressure and backfill pressure should be the most important and immediate measure to restrain surface settlement during excavation. In this paper, a 3-D hydro-mechanical coupled FE model is developed to numerically simulate the entire process of shield TBM tunneling, which is verified by comparing with real field measurements of ground surface settlement. The effect of permeability and stiffness of ground formations on tunneling-induced surface settlement was discussed in the parametric study. An increase in the face pressure and backfill pressure does not always lead to a decrease in surface settlement, but there are the critical face pressure and backfill pressure. In addition, considering the relatively low permeability of ground formations, the surface settlement consists of two parts, i.e., immediate settlement and consolidation settlement, which shows a distinct settlement behavior to each other.

• 한국터널지하공간학회 논문집
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• 제7권2호
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• pp.97-108
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• 2005

본 논문에서는 터널굴착과 지히수의 상호작용이 터널의 거동에 미치는 영향에 대한 내용을 다루었다. 이를 위해 먼저 터널 굴착으로 인해 지하수유동이 발생하는 구간에서의 설계주안점을 고찰하였으며 서울지역의 지하철 건설시 접하는 일반적인 지반조건에 시공되는 가상의 터널조건에 대해 응력-간극수압 연계해석을 이용한 매개변수 연구를 수행하였다. 매개변수 연구 결과를 토대로 지하수 유동에 따른 막장거통 및 지표변위 특성을 고찰하였으며 터널-지히수 상호작용 관점에서 지반/라이닝 투수성에 따른 솟크리트 라이닝 응력 발생 경향을 고찰하였다. 검토결과 터널-지히수 상호작용은 지표침하량 및 변위를 증가시키며 솟크리트 라이닝 축력을 증가시키는 것으로 나타났다. 아울러 솟크리트 축력은 지반과 솟크리트 라이닝의 상대적 투수성에 좌우되는 것으로 나타났다. 본 연구결과를 종합하여 설계시 고려하여야 할 주안점을 제시하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.230-238
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• 2017

We have proposed an InGaAs-based gate-all-around (GAA) tunneling field-effect transistor (TFET) with a stacked dual-metal gate (DMG). The electrical performances of the proposed TFET are evaluated through technology computer-aided design (TCAD) simulations. The simulation results show that the proposed TFET demonstrates improved DC performances including high on-state current ($I_{on}$) and steep subthreshold swing (S), in comparison with a single-metal gate (SMG) TFET with higher gate metal workfunction, as it has a thinner source-channel tunneling barrier width by low workfunction of source-side channel gate. The effects of the gate workfunction on $I_{on}$, the off-state current ($I_{off}$), and S in the DMG-TFETs are examined. The DMG-TFETs with PNPN structure demonstrate outstanding DC performances and RF characteristics with a higher n-type doping concentration in the $In_{0.8}Ga_{0.2}As$ source-side channel region.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2003년도 High Temperature Superconductivity Vol.XIII
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• pp.28-28
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• 2003

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2005년도 High Temperature Superconductivity Vol.XV
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• pp.13-13
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• 2005