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http://dx.doi.org/10.5573/JSTS.2013.13.6.551

Linearity of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors  

Lee, Hyun Kook (Department of Electronic Engineering, Sogang University)
Choi, Woo Young (Department of Electronic Engineering, Sogang University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.13, no.6, 2013 , pp. 551-555 More about this Journal
Abstract
Linearity characteristics of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) have been compared with those of high-k-only and $SiO_2$-only TFETs in terms of IIP3 and P1dB. It has been observed that the optimized HG TFETs have higher IIP3 and P1dB than high-k-only and $SiO_2$-only TFETs. It is because HG TFETs show higher transconductance ($g_m$) and current drivability than $SiO_2$-only TFETs and $g_m$ less sensitive to gate voltage than high-k-only TFETs.
Keywords
Low power; linearity; tunneling field-effect transistor (TFET);
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