• The Journal of Engineering Geology
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• v.5 no.2
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• pp.167-179
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• 1995

The only three elements such as RQD, N -value and Es were used as a quantitative standard for the design of supporr pattern determidetion on subway line 8th in Seoul. Because the support pattern that was obtained by these elements could not he determined on the basis of the quantitative of geology and the orientations and properties of discontinuity planes, there have been some problems in determining the economic support pattern and tunnel stability. Therefore, in an attempt to determine the stable and economic support pattern with more quantitative elements, more flerrible rock mass classification with geologic conditions was performed by using RMR at 1745 sections and Q-system at 374 sections within Seongnam block on subway line 8th. Then, rusults by these two methods were compared with standard support pattern of the subway line 8th. Moreover, relationships between geology, geologic structures and topography to rock mass grades were studied. According to the rusult of this study, it is judged that the standard support pattern designed with PD-4 or PS - 4 should have been subdivided into 4~6 support patterns. Some sections where geologic structures such as faults and joints are developed tend to have rock mass grades. And they also have low rock mass grades near valley. On thr other hand, they show intermediate grades at piedmont area and the greatest ones at high mountains.

• The Journal of Engineering Geology
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• v.26 no.2
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• pp.187-196
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• 2016

We conducted three-dimensional finite element analysis to predict the presence of upcoming fault zones during tunneling. The analysis considered longitudinal displacements measured at tunnel face, and used 28 numerical models with various fault attitudes. The x-MR (moving range) control chart was used to analyze quantitatively the effects of faults distributed ahead of the tunnel face, given the occurrence of a longitudinal displacement. The numerical models with fault were classified as fault gouge, fault breccia, and fault damage zones. The width of fault cores was set to 1 m (fault gouge 0.5 m and fault breccia 0.5 m) and the width of fault damage zones was set to 2 m. The results, suggest that fault centers could be predicted at 2~26 m ahead of the tunnel face and that faults could be predicted earliest in the 45° dip model. In addition, faults could be predicted earliest when the angle between the direction of tunnel advance and the strike of the fault was smallest.

• Journal of Sensor Science and Technology
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• v.7 no.2
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• pp.97-102
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• 1998

Organic thin film EL devices using PPV(poly (p-phenylenevinylene)) as emitter were fabricated on various conditions and structures, their electro-optical properties were estimated. Fabricated EL devices had structures of single layer(ITO(indium tin oxide)/PPV/Mg), double layer(ITO/PVK(poly(N-vinylcarbazole))/PPV/Mg and ITO/PPV/Polymer matrix + PBD/Mg) and three layer (ITO/PVK/PPV/PS(polystyrene)+PBD(butyl-2-(4-bipheny])-5-(4-tert-butylphenyl-1,3,4-oxadiazole))/Mg), their electro-optical characteristics were compared with each other. In structure of double layer (ITO/PPV /Polymer matrix + PBD/Mg), the used polymer-matrices were PMMA(poly(methyl methacrylate), PC(polycarbonate), PS and MCH(side chain liquid crystalline homopolymer). When PS as a hole transport layer was used, the luminance characteristics on concentration of PBD was obtained. In results, current-voltage-luminance curves of fabricated devices had characteristics of tunneling effect and the device showed a stable light emitting.

• Journal of the Institute of Convergence Signal Processing
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• v.8 no.1
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• pp.51-57
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• 2007

In this paper we introduce the concept of MPLS-based VPN and propose a scheme for providing VPN services in MPLS networks. Furthermore, we design the control components and the operational procedures and evaluated the performance of traditional VPN implementation methods and MPLS-based VPN. In this scheme it is possible to solve several problems that IP-based VPN pertains via the allocation of VPN ID and virtual space without tunneling, thereby providing effective VPN services. In other words, the MPLS-based VPN scheme uses MPLS networking technology together with the PSTN which can achieve a perfect segregation of user traffic on per-customer basis in a physical link and can guarantee high reliability and security levels. Specially, in the perspective of customers, it can save networking facilities installation and maintenance costs considerably. On the contrary, it possesses some shortcomings in that its deployment tends to be restricted within an ISP's network boundary and it is vulnerable to external security break-ins when going through public networks such as the Internet due to its lack of data encryption capability.

• Korean Journal of Construction Engineering and Management
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• v.9 no.5
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• pp.127-136
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• 2008

The initial step in the construction process, estimating appropriate construction time and expense is the most important factor that would influence the result of the construction. In order to enhance productivity and efficiency, there is a need to analyze and manage rationally. The purpose of this project is to make a simulation model for all subway tunnel construction based on the NATM method, also give an support equipment that would make available to plan and analyze the construction. The development of simulation model is based on a real case construction analysis process and also on the reference data. It reflects restrictive elements, make it possible to modify the conditions, and not only adapt to our project's construction but other projects as well. The model developed by this project will be able to reasonably predict the construction completion time and support the process of decision making during the planning. Therefore we can expect the productivity and efficiency of the whole construction projects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.35-38
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• 2002

In this paper, the characteristics of channel hot electron (CHE) injection for the write operation in a NOR-type SONOS flash memory with common source line were investigated. The thicknesses of he tunnel oxide, the memory nitride， and the blocking oxide layers for the gate insulator of the fabricated SONOS devices were $34{\AA}$, $73{\AA}$, and $34{\AA}$, respectively. The SONOS devices compared to floating gate devices have many advantages, which are a simpler cell structure, compatibility with conventional logic CMOS process and a superior scalability. For these reasons, the introduction of SONOS device has stimulated. In the conventional SONOS devices, Modified Folwer-Nordheim (MFN) tunneling and CHE injection for writing require high voltages, which are typically in the range of 9 V to 15 V. However CHE injection in our devices was achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The memory window of about 3.2 V and the write speed of $100{\mu}s$ were obtained. Also, the disturbance and drain turn-on leakage during CHE injection were not affected in the SONOS array. These results show that CHE injection can be achieved with a low voltage and single power supply, and applied for the high speed program of the SONOS memory devices.

• Structural Engineering and Mechanics
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• v.58 no.5
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• pp.869-886
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• 2016

Non-Deformable Support System (NDSS) is one of the support system analysis methods. It is likely seen as numerical analysis. Obviously, numerical modeling is the key tool for this system but not unique. Although the name of the system makes you feel that there is no deformation on the support system, it is not true. The system contains some deformation but in certain tolerance determined by the numerical analyses. The important question is what is the deformation tolerance? Zero deformation in the excavation environment is not the case, actually. However, deformation occurred after supporting is important. This deformation amount will determine the performance of the applied support. NDSS is a stronghold analysis method applied in full to make this work. While doing this, NDSS uses the properties of rock mass and material, various rock mass failure criteria, various material models, different excavation geometries, like other methods. The thing that differ NDSS method from the others is that NDSS makes analysis using the time dependent deformation properties of rock mass and engineering judgement. During the evaluation process, NDSS gives the permission of questioning the field observations, measurements and timedependent support performance. These transactions are carried out with 3-dimensional numeric modeling analysis. The goal of NDSS is to design a support system which does not allow greater deformation of the support system than that calculated by numerical modeling. In this paper, NDSS applied to the problems of Tunnel 34 of the same Project (excavated with NATM method, has a length of 2218 meters), which is driven in graphite schist, was illustrated. Results of the system analysis and insitu measurements successfully coincide with each other.

• Corrosion Science and Technology
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• v.16 no.1
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• pp.1-7
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• 2017

When aiming for an increased and more sustainable use of metals a thorough knowledge of the corrosion phenomenon as function of the local metal microstructure is of crucial importance. In this work, we summarize the information presented in our previous publications[1-3] and present an overview of the different local (electrochemical) techniques that have been proven to be effective in studying the relation between different microstructural variables and their different electrochemical behavior. Atomic force microscopy (AFM)[1], scanning electrochemical microscopy (SECM)[2], and electrochemical scanning tunneling microscopy (EC-STM)[3] were used in combination with electron backscatter diffraction (EBSD). Consequently, correlations could be identified between the grain orientation and grain boundary characteristics, on the one hand, and the electrochemical behavior on the other hand. The grain orientation itself has an influence on the corrosion, and the orientation of the neighboring grains also seems to play a decisive role in the dissolution rate. With respect to intergranular corrosion, only coherent twin boundaries seem to be resistant.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.494-500
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• 2014

Indium-doped zinc oxide nanocrystals (IZO NCs), capped with stearic acid (SA) of different sizes, were synthesized using a hot injection method in a noncoordinating solvent 1-octadecene (ODE). The ligand exchange process was employed to modify the surface of IZO NCs by replacing the longer-chain ligand of stearic acid with the shorter-chain ligand of butylamine (BA). It should be noted that the ligand-exchange percentage was observed to be 75%. The change of particle size, morphology, and crystal structures were obtained using a field emission scanning electron microscope (FE-SEM) and X-ray diffraction pattern results. In our study, the 5 nm and 10 nm IZO NCs capped with stearic acid (SA-IZO) were ligand-exchanged with butylamine (BA), and were then spin-coated on a thermal oxide ($SiO_2$) gate insulator to fabricate a thin film transistor (TFT) device. The films were then annealed at various temperatures: $350^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$, and $600^{\circ}C$. All samples showed semiconducting behavior and exhibited n-channel TFT. Curing temperature dependent on mobility was observed. Interestingly, mobility decreases with the increasing size of NCs from 5 to 10 nm. Miller-Abrahams hopping formalism was employed to explain the hopping mechanism insight our IZO NC films. By focusing on the effect of size, different curing temperatures, electron coupling, tunneling rate, and inter-NC separation, we found that the decrease in electron mobility for larger NCs was due to smaller electronic coupling.

• Korean Journal of Materials Research
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• v.12 no.3
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• pp.200-204
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• 2002

We fabricated TMR devices which have double oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it by varying oxidation time for 5, 10, 20 sec. Subsequent sputtering of 13 $\AA$ - Al was performed and the matallic layer was oxidized for 120 sec. The electrical resistance changed from 700$\Omega$ to 2700$\Omega$ with increase of oxidation time, while variation of MR ratio was little spreading 27~31% which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3~1.5 eV, sufficient for tunnel barrier, and the barrier width(<16.2 $\AA$) was smaller than that of directly measured value by the tunneling electron microscopy. Our results may be caused by insufficient oxidation of Al precursor into $Al_2O_3$. However, double oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. We found that the external magnetic field to switch spin direction of ferromagnetic layer of pinned layer breaking ferro-antiferro exchange coupling was increased as bottom layer oxidation time increased. Our results imply that we were able to improve MR ratio and tune switching field by employing double oxidized tunnel barrier process.