• Title/Summary/Keyword: Tunnel junction

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Design of Local Field Switching MRAM (Local Field Switching 방식의 MRAM 설계)

  • Lee, Gam-Young;Lee, Seung-Yeon;Lee, Hyun-Joo;Lee, Seung-Jun;Shin, Hyung-Soon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.8
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    • pp.1-10
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    • 2008
  • In this paper, we describe a design of a 128bit MRAM based on a new switching architecture which is Local Field Switching(LFS). LFS uses a local magnetic field generated by the current flowing through an MTJ. This mode reduces the writing current since small current can induce large magnetic field because of close distance between MTJ and the current. It also improves the cell selectivity over using conventional MTJ architecture because it doesn't need a digit line for writing. The MRAM has 1-Transistor 1-Magnetic Tunnel Junction (IT-1MTJ) memory cell structure and uses a bidirectional write driver, a mid-point reference cell block and a current mode sense amplifier. CMOS emulation cell is adopted as an LFS-MTJ cell to verify the operation of the circuit without the MTJ process. The memory circuit is fabricated using a $0.18{\mu}m$ CMOS technology with six layers o) metal and tested on custom board.

Investigation on Etch Characteristics of FePt Magnetic Thin Films Using a $CH_4$/Ar Plasma

  • Kim, Eun-Ho;Lee, Hwa-Won;Lee, Tae-Young;Chung, Chee-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.167-167
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    • 2011
  • Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

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The Influence of $O_2$ Gas on the Etch Characteristics of FePt Thin Films in $CH_4/O_2/Ar$ gas

  • Lee, Il-Hoon;Lee, Tea-Young;Chung, Chee-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.408-408
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    • 2012
  • It is well known that magnetic random access memory (MRAM) is nonvolatile memory devices using ferromagnetic materials. MRAM has the merits such as fast access time, unlimited read/write endurance and nonvolatility. Although DRAM has many advantages containing high storage density, fast access time and low power consumption, it becomes volatile when the power is turned off. Owing to the attractive advantages of MRAM, MRAM is being spotlighted as an alternative device in the future. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal- oxide semiconductor (CMOS). MTJ stacks are composed of various magnetic materials. FePt thin films are used as a pinned layer of MTJ stack. Up to date, an inductively coupled plasma reactive ion etching (ICPRIE) method of MTJ stacks showed better results in terms of etch rate and etch profile than any other methods such as ion milling, chemical assisted ion etching (CAIE), reactive ion etching (RIE). In order to improve etch profiles without redepositon, a better etching process of MTJ stack needs to be developed by using different etch gases and etch parameters. In this research, influences of $O_2$ gas on the etching characteristics of FePt thin films were investigated. FePt thin films were etched using ICPRIE in $CH_4/O_2/Ar$ gas mix. The etch rate and the etch selectivity were investigated in various $O_2$ concentrations. The etch profiles were studied in varying etch parameters such as coil rf power, dc-bias voltage, and gas pressure. TiN was employed as a hard mask. For observation etch profiles, field emission scanning electron microscopy (FESEM) was used.

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Effects of Etch Parameters on Etching of CoFeB Thin Films in $CH_4/O_2/Ar$ Mix

  • Lee, Tea-Young;Lee, Il-Hoon;Chung, Chee-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.390-390
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    • 2012
  • Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

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Etch Characteristics of MgO Thin Films in Cl2/Ar, CH3OH/Ar, and CH4/Ar Plasmas

  • Lee, Il Hoon;Lee, Tea Young;Chung, Chee Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.387-387
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    • 2013
  • Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).

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Secondary Flow Characteristics in a Liquid Ramjet Combustor Using Stereoscopic PIV (Stereoscopic PIV 속도장 측정기법을 이용한 액체 램제트 연소기에서의 2차 재순환 유동장 특성)

  • Kim S. J.;Sohn C. H.
    • Journal of the Korean Society of Visualization
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    • v.3 no.1
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    • pp.58-62
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    • 2005
  • Flow characteristics at secondary recirculation zone in a liquid fuel ramjet combustor were investigated using CFD and Stereoscopic PIV method. The combustors have two rectangular inlets that form 90 degree each other. Three guide vanes were installed in each rectangular inlet to improve the flow stability. The tested angle of the air intakes was 60 degree. The experiments were performed in the water tunnel test with the same Reynolds number in the case of Mach 0.3 at inlet. The computational and experimental results showed that the secondary recirculation flow occurred at the front junction of inlet main stream and combustor chamber. The size of secondary recirculation regions are increased with approaching closer to the center of the combustor. Since the performance of combustor is closely dependent not only on the main recirculation in the dome region but also on the secondary recirculation flow in a junction region, the optimal angle of the air intakes should be considered the recirculation size as frame holder.

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Flow Characteristics of secondary recirculation region for using Stereoscopic PIV in a Liquid Fuel Ramjet Combustor (Stereoscopic PIV 속도장 측정기법을 이용한 액체 램제트 연소기에서의 2차 재순환 유동장 측정)

  • Kim S. J.;Choi J. H.;Park C. W.;Sohn C. h.
    • 한국가시화정보학회:학술대회논문집
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    • 2003.11a
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    • pp.115-120
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    • 2003
  • Flow characteristics at secondary recirculation zone in a liquid fuel ramjet combustor are investigated using CFD and 3-D Stereoscopic PIV method. The combustors have two rectangular inlets that form 90 degree each other. Three guide vanes were installed in each rectangular inlet to improve the flow stability. The tested angle of the air intakes was 60 degree. The experiments were performed in the water tunnel test with the same Reynolds number in the case of Mach0.3 at inlet. Both computational and experimental results showed the secondary recirculation flow occurred at the front junction of inlet main stream and combustor chamber. The size of secondary recirculation region increased with upon closer center of axial combustor. Since the performance of combustor depends on not only the main recirculation in the dome region but also the secondary recirculation flow in a junction region, the optimal angle of the air intakes should consider the recirculation size as frame holder.

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Flow Characteristics of Secondary Recirculation Region in a Liquid Ramjet Combustor (액체 램젯트 엔진 연소기내의 이차유동 특성)

  • C. H. Sohn;J. S. Hong;S. Y. Moon;C. W. Lee
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2003.05a
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    • pp.137-140
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    • 2003
  • The flow characteristics of secondary recirculation region in a liquid fuel ramjet combustor are measured using PIV method. The model combustor has two rectangular inlets that form 90 degree angle each other. The tested angles of the air intakes were 30, 45 and 60. Three guide vanes are installed in each rectangular inlet to improve the flow stability. The experiments are performed in the water tunnel test with the same Reynolds number as the case of Mach 0.3 at the inlet. PIV software is developed to measure the characteristics of the flow field in the combustor. The accuracy of the developed PIV program is verified with rotating disk experiment and standard data. The experimental results show that the secondary recirculation flow occurred at the front junction of inlet main stream and combustorchamber. The size of secondary recirculation regions are increased with increasing air inlet angles. Since the performanceof combustor is very dependant on not only the main recirculation in the dome region but also the secondary recirculation flow in a junction region, the optimal angle of the air intakes should consider the both recirculation size as a frame holder.

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Effects of Annealing Temperature on the Local Current Conduction of Ferromagnetic Tunnel Junction (열처리에 따른 강자성 터널링 접합의 국소전도특성)

  • Yoon, Tae-Sick;Tsunoda, Masakiyo;Takahashi, Migaku;Li, Ying;Park, Bum-Chan;Kim, Cheol-Gi;Kim, Chong-Oh
    • Korean Journal of Materials Research
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    • v.13 no.4
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    • pp.233-238
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    • 2003
  • Ferromagnetic tunnel junctions, Ta/Cu/Ta/NiFe/Cu/$Mn_{75}$ $Ir_{25}$ $Co_{70}$ $Fe_{30}$/Al-oxide, were fabricated by do magnetron sputtering and plasma oxidation process. The effect of annealing temperature on the local transport properties of the ferromagnetic tunnel junctions was studied using contact-mode Atomic Force Microscopy (AFM). The current images reflected the distribution of the barrier height determined by local I-V analysis. The contrast of the current image became more homogeneous and smooth after annealing at $280^{\circ}C$. And the average barrier height $\phi_{ave}$ increased and its standard deviation $\sigma_{\phi}$ X decreased. For the cases of the annealing temperature more than $300^{\circ}C$, the contrast of the current image became large again. And the average barrier height $\phi_{ave}$ decreased and its standard deviation $\sigma_{\phi}$ increased. Also, the current histogram had a long tail in the high current region and became asymmetric. This result means the generation of the leakage current that is resulted from the local generation of a low barrier height region. In order to obtain the high tunnel magnetoresistance(TMR) ratio, the increase of the average barrier height and the decrease of the barrier height fluctuation must be strictly controlled.led.

A Review on TOPCon Solar Cell Technology

  • Yousuf, Hasnain;Khokhar, Muhammad Quddamah;Chowdhury, Sanchari;Pham, Duy Phong;Kim, Youngkuk;Ju, Minkyu;Cho, Younghyun;Cho, Eun-Chel;Yi, Junsin
    • Current Photovoltaic Research
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    • v.9 no.3
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    • pp.75-83
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    • 2021
  • The tunnel oxide passivated contact (TOPCon) structure got more consideration for development of high performance solar cells by the introduction of a tunnel oxide layer between the substrate and poly-Si is best for attaining interface passivation. The quality of passivation of the tunnel oxide layer clearly depends on the bond of SiO in the tunnel oxide layer, which is affected by the subsequent annealing and the tunnel oxide layer was formed in the suboxide region (SiO, Si2O, Si2O3) at the interface with the substrate. In the suboxide region, an oxygen-rich bond is formed as a result of subsequent annealing that also improves the quality of passivation. To control the surface morphology, annealing profile, and acceleration rate, an oxide tunnel junction structure with a passivation characteristic of 700 mV or more (Voc) on a p-type wafer could achieved. The quality of passivation of samples subjected to RTP annealing at temperatures above 900℃ declined rapidly. To improve the quality of passivation of the tunnel oxide layer, the physical properties and thermal stability of the thin layer must be considered. TOPCon silicon solar cell has a boron diffused front emitter, a tunnel-SiOx/n+-poly-Si/SiNx:H structure at the rear side, and screen-printed electrodes on both sides. The saturation currents Jo of this structure on polished surface is 1.3 fA/cm2 and for textured silicon surfaces is 3.7 fA/cm2 before printing the silver contacts. After printing the Ag contacts, the Jo of this structure increases to 50.7 fA/cm2 on textured silicon surfaces, which is still manageably less for metal contacts. This structure was applied to TOPCon solar cells, resulting in a median efficiency of 23.91%, and a highest efficiency of 24.58%, independently. The conversion efficiency of interdigitated back-contact solar cells has reached up to 26% by enhancing the optoelectrical properties for both-sides-contacted of the cells.