• Korean Journal of Materials Research
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• v.30 no.8
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• pp.421-425
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• 2020

A transparent quantum dot (QD)-based light-emitting diode (LED) with silver nanowire (Ag NW) and indium-tin oxide (ITO) hybrid electrode is demonstrated. The device consists of an Ag NW-ITO hybrid cathode (-), zinc oxide, poly (9-vinylcarbazole) (PVK), CdSe/CdZnS QD, tungsten trioxide, and ITO anode (+). The device shows pure green-color emission peaking at 548 nm, with a narrow spectral half width of 43 nm. Devices with hybrid cathodes show better performances, including higher luminance with higher current density, and lower threshold voltage of 5 V, compared with the reference device with a pure Ag NW cathode. It is worth noting that our transparent device with hybrid cathode exhibits a lifetime 9,300 seconds longer than that of a device with Ag NW cathode. This is the reason that the ITO overlayer can protect against oxidization of Ag NW, and the Ag NW underlayer can reduce the junction resistance and spread the current efficiently. The hybrid cathode for our transparent QD LED can applicable to other quantum structure-based optical devices.

• Korean Journal of Materials Research
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• v.15 no.7
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• pp.486-490
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• 2005

Thin films of tungsten oxide and nickel oxide were deposited on $Al_2O_3/Si-substrate$ by high vacuum thermal evaporation. The properties of microstructure and crystallinity were analyzed by SEM and XRD respectively. $WO_3$ films without addition of NiO showed polycrystalline structure after annealing at $500^{\circ}C$ for SO min. There were the cracks between the polycrystalline grains and the crack width was increased with the thickness of $WO_3$ films. The cracks in the $WO_3$ films could be controlled by an optimum deposition of NiO on $WO_3$ films and either less or more than the optimum addition fails to suppress the cracks. A process mechanism to suppress the crack has been discussed.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.12
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• pp.177-184
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• 2001

C3M(chemical mechanical micro machining) is applied for diminishing the size of burr and fabricating the massless patterning for aluminium wafer(thickness of 1${\mu}m$). It is difficult to perform the micro size machining with the radically increased shear stress. While the miniaturization and function-orientation of parts has been needed in the many field such as electronics, optics and medicine. etc., it is not enough to satisfy the industry needs in the machining technology. In this paper feasibility test of diminishing burr and fabricating maskless pattern was experimented and analyzed. In the experiment oxide layer was farmed on the aluminium with chemical reaction by ${HNO_3}$(10wt%), then the surface was grooved with tungsten carbide tool for the different condition such as the load and fred rate. The result was compared with the conventional machining to show the improvement of C3M with SEM for burr diminish and XPS for atomic existence, AFM for more precise image.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.25.1-25.1
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• 2009

The effects of surface energyon the wetting transition for impinging water droplets were experimentally investigated on the chemically modified WOx nanowire surfaces. We could modify the surface energy of the nanostructures through chemisorption of alkyltrichlorosilanes with various carbon chain lengths and by the UV-enhanced decomposition of self assembled monolayer (SAM) molecules chemically adsorbedon the array. Three surface wetting states could be identified through the balance between antiwetting and wetting pressures. This approach establishes simple strategy for the design criteria for water-repellent surface to impinging droplets.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.601-604
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• 1998

NOX detecting gas sensors using TiO2 doped tungsten oxide semiconductor were prepared and their electrical and sensing characteristics have been investigated. In normal air condition, the sensors of WO3, TiO2 doped WO3 show grain boundary heights of 0.34 eV, 0.25 eV, respectively. The grain boundary barrier energy variation was increased by doping TiO2 into large variation of resistance to NOX gases. And doping the TiO2 4 wt.%, the particle size of WO3 polycrystal films showed higher sensitivity and better sorption characteristics to NOX gas than the pure WO3 films material in air at operating temperature of $350^{\circ}C.$ The TiO2 doped WO3 semiconductor gas sensor shows nano-sized particle size and good sensitivity to sub-ppm concentration of NOX.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1281-1284
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• 2005

In the micro electrochemical machining (ECM), unfavorable oxide/passive layer formation and overall corrosion of electrodes must be prevented. Generally, the stainless steel electrode corrodes, passivates or dissolves in the electrochemical cell according to the electrode potential. Therefore, the electrode must maintain stable potential. The stable electrode potentials of tool and workpiece were determined with the potentiodynamic polarization test and verified experimentally from the point of machining stability and machined surface quality.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.121-122
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• 2008

The films of the vanadium tungsten oxide, $V_{1.85}W_{0.15}O_5$, were grown on Pt/Ti/$SiO_2$/Si substrate by RF sputtering method. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the thin film thickness. As increasing of $V_{1.85}W_{0.15}O_5$ thickness, the grain size, morphology, and crystallinity increased. The dielectric constants of $V_{1.85}W_{0.15}O_5$ thin films deposited at 150nm were 71.11, with a dielectric loss of 0.015, respectively. Also, The $V_{1.85}W_{0.15}O_5$ thin films showed good TCR values of -3.45%/K.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1464-1466
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• 2007

We demonstrate p-doped organic light emitting diodes (OLEDs) comprising tungsten oxide ($WO_3$) and 1,4-bis[N-(1-naphthyl)-N'-phenylamino]-4,4' diamine (NPB). We propose the NPB : $WO_3$ composition functions as a p-doping layer which significantly improves hole injection that leads to the fabrication of 4-(dicyano-methylene)-2-methyl-6-(p-dimethylaminos tyryl)-4H-pyrane (DCMl) based p-doped OLEDs with high efficiency and long lifetime.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.54-54
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• 1992

ITO투명전극/WO$_3$박막/LiClO$_4$-PC/백금 대향전극 구조를 갖는 일렉트로 크로믹 소자를 구성하여 WO$_3$박막의 일렉트로크로믹 특성을 조사하였다. WO$_3$박막의 coloration의 LiClO$_4$-PC 유기전해질과 ITO 투명전극으로부터 Li$^{+}$이온과 전자들의 이중주입에 의하여 청색으로 나타났으며, 전기화학전인 산화반응에 의하여 bleaching 현상이 가역적으로 일어났다. Coloration 과 bleaching 현상, 광학밀도, 구동전압 및 응담속도등의 일렉트로크로믹 특성은 WO$_3$ 박막의 성장 조건, WO$_3$박막 두께, ITO 투명전극의 sheet resistance, 대향전극 및 인가전압에 크게 의존하는 것으로 밝혀졌다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.2
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• pp.47-49
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• 2004

Gate protection $SiN_x$ as an alternative to a conventional re-oxidation process in Dynamic Random Access Memory devices is investigated. This process can not only protect the gate electrode tungsten against oxidation, but also save the thermal budget due to the re-oxidation. The protection $SiN_x$ process is applied to the poly-Si gate, and its device performance is measured and compared with the re-oxidation processed poly-Si gate. The results on the gate dielectric integrity show that etch damage-curing capability of protection $SiN_x$ is comparable to the re-oxidation process. In addition, the hot carrier immunity of the $SiN_x$ deposited gate is superior to that of re-oxidation processed gate.