• International Journal of Safety
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• v.11 no.2
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• pp.5-9
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• 2012

The discharge properties of super high-pressure mercury lamp are due to resistance heating for energy input, and results in temperature increase. The cooling equilibrium state is reached by the heat conduction, convection and radiation. In order to predict the fluid flow and heat transfer in and around the mercury lamp accurately, its visualization is of utmost importance. Such visualization is carried out by CFD program in this study. We focus on Anode shape to calculate four cases, namely AA, AB, AC and AD separately, and compare the temperature distribution and velocity vector in each case to predict cooling capacity and fluid flow properties. It can be concluded that the shape of anode plays an important role that affects the fluid flow and heat transfer in a mercury lamp.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.2
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• pp.47-49
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• 2004

Gate protection $SiN_x$ as an alternative to a conventional re-oxidation process in Dynamic Random Access Memory devices is investigated. This process can not only protect the gate electrode tungsten against oxidation, but also save the thermal budget due to the re-oxidation. The protection $SiN_x$ process is applied to the poly-Si gate, and its device performance is measured and compared with the re-oxidation processed poly-Si gate. The results on the gate dielectric integrity show that etch damage-curing capability of protection $SiN_x$ is comparable to the re-oxidation process. In addition, the hot carrier immunity of the $SiN_x$ deposited gate is superior to that of re-oxidation processed gate.

• Proceedings of the KWS Conference
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• 2004.05a
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• pp.27-29
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• 2004

Orbital TIG welding process being used fur the new construction, the repair of nuclear piping system ana other critical piping. When weld quality is important or there are a large number of similar weld to be made or when access is restricted with manual torch, Orbital TIG welding is most effective process because of practical for out-of-position and high weld quality. Furthermore, typically superior to manual TIG welding process where the pipe remains in place and the tungsten electrode orbits the weld. As smaller and more compact welding head is being developed, could operate in tight spaces and lend itself to this type of application better than any other welding process. Orbital TIG welding has become more and more field practical process.

• Proceedings of the Safety Management and Science Conference
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• 2013.11a
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• pp.547-560
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• 2013

In this study, the air pollutant removal such as sulfur oxides was studied. A combination of the plasma discharge in the reactor by the reaction surface discharge reactor Calcium hydroxides catalytic reactor and air pollutants, hazardous gas SOx, changes in gas concentration, change in frequency, the thickness of the electrode, kinds of electrodes and the addition of simulated composite catalyst composed of a variety of gases, including decomposition experiments were performed by varying the process parameters. The experimental results showed the removal efficiency of 98% in the decomposition of sulfur oxides removal experiment when Calcium hydroxides catalysts and the tungsten(W) electrodes were used. It was increased 3% more than if you do not have the catalytic. If added to methane gas was added the removal efficiency increased decomposition.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.30 no.1
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• pp.66-71
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• 2016

In this study, electrical and spectroscopic characteristics were investigated in the pin to plate discharge of 0.9% weight per unit volume saline solution. The positive and positive- and negative-going dc pulse with 5% duty ratio were applied to tungsten pin electrode. The more amount of discharge current flew in negative discharge. The temperature, which is considered as a local value in the vicinity of vapor of discharge, was about 3,000K which is much higher than the value recommended to be controlled. It can be suggested that not only the temperature of liquid but also the local temperature of vapor is monitored to investigate damages on tissue or cells in biological application.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.9
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• pp.371-377
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• 2003

We perform the physical analysis such that Si/W composition ratios and phosphorus distribution change in the W/S $i_{x}$ thin films according to phosphorus concentration of polysilicon and W $F_{6}$ flow rate for the formation of WS $i_{x}$ polycide used as a gate electrode. We report that these physical characteristics have effects on the contact resistance between word line and bit line in DRAM devices. RBS measurements show that for the samples having phosphorus concentrations of 4.75 and 6.0${\times}$10$^{2-}$ atoms/㎤ in polysilicon, by applying W $F_{6}$ flow rates decreases from 4.5 to 3.5 sccm, Si/W composition ratio has increases to 2.05∼2.24 and 2.01∼2.19, respectively. SIMS analysis give that phosphorus concentration of polysilicon for both samples have decreases after annealing, but phosphorus concentration of WS $i_{x}$ thin film has increases by applying W $F_{6}$ flow rates decreases from 4.5 to 3.5 sccm. The contact resistance between word line and bit line in the sample with phosphorus concentration of 6.0 ${\times}$ 10$^{20}$ atoms/㎤ in polysilicon is lower than the sample with 4.75 ${\times}$ 10$^{20}$ atoms/㎤ After applying W $F_{6}$ flow rates decreases from 4.5 to 3.5 sccm, the contact resistance has been improved dramatically from 10.1 to 2.3 $\mu$ $\Omega$-$\textrm{cm}^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.7
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• pp.513-519
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• 2001

We proposed Si-rich tungsten silicide (WSix) films for alternate gate electrode of deep-submicron MOSFETs. The investigation of WSix films deposited directly on SiO$_2$ indicated that the annealing of as-deposited films using a rapid thermal processor (RTP) results in low resitivity, as well as negligible fluorine (F) diffusion. Specifically, the resitivity of RTP-annealed samples at 800 $^{\circ}C$ for 3 minutes in vacuum was ~160 $\mu$$\Omega$ . cm, and the irregular growth of an extra SiO$_2$ layer due to F diffusion during annealing has not been observed. In addition, the analysis of the WSix-SiO$_2$-Si (MOS) capacitors exhibits excellent electrical characteristics.

• Applied Chemistry for Engineering
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• v.7 no.6
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• pp.1078-1086
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• 1996

The peroxo-polytungstic acid was formed by the direct reaction of tungsten powder with the hydrogen peroxide solution. Peroxo-polytungstic powder were prepared by rotary evaporator using the fabricated on to ITO coated glass as substrate by dip-coating method using $2g/10mL(W-IPA/H_2O)$ sol solution. A substrate was dipped into the sol solution and after a meniscus had settled, the substrate was withdrawn at a constant rate of the 3mm/sec. Thicker layer could be built up by repeated dipping/post-treatment 15 times cycles. The layers dried at the temperature of $65{\sim}70^{\circ}C$ during the withdrawn process, and then tungsten oxides thin film was formed by final heating treatment at the temperature of $230{\sim}240^{\circ}C$ for 30min. A linear rotation between the thickness of thin film and the number of dipping/post-treatment cycles for tungsten oxides thin films made by dip-coating was found. The thickness of thin film had $60{\AA}$ after one dipping. From the patterns of XRD, the structure of tungsten oxides thin film identified as amorphous one and from the photographs of SEM, the defects and the moderate cracks were observed on the tungsten oxides thin film, but the homogeneous surface of thin films were mostly appeared. The electrochemical characteristic of the $ITO/WO_3$ thin film electrode were confirmed by the cyclic voltammetry and the cathodic Tafel polaization method. The coloring bleaching processes were clearly repeated up to several hundreds cycles by multiple cyclic voltammetry, but the dissolved phenomenon of thin film revealed in $H_2SO_4$ solution was observed due to the decrease of the current densities. The diffusion coefficient was calculated from irreversible Randles-Sevick equation from the data obtained by the cyclic voltammetry with various scan rates.

• Journal of the Korean Society of Safety
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• v.15 no.3
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• pp.66-70
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• 2000

In order to cope with environmental problems caused by harmful gases emitted from various industrial sources, a new technology which employs discharge plasma formed in ordinary atmospheric pressure has been intensively investigated in many industrialized nations. Although a plenty of useful outcomes and suggestions have been made public by scientists in this field, few commercial products which effectively decompose pollutant gases have appeared as yet. This is partly because that the energy efficiency of a most effective plasma reactor has not reached a satisfactory level in comparison with those of devices using conventional technologies. In an attempt to solve the problem mentioned above, we noticed to combine heterogeneous electrical discharges. This concepts is based on that each plasma reactor has its specific spatial region in which chemical reaction are active and by electrically affected with another reactor of different type, the activated region would increase - which may lead to cutting down the energy consumption. To prove this concept experimentally, two different discharge equipments, a plane ceramic-based surface discharge electrode and a corona electrode with tungsten needle may, are selected and combined to fabricate a hybrid plasma reactor. The results are summarized as follows; (1) Ozone concentration generated in the plasma region drastically increases when the positive corona discharge is added to the surface discharge. The rate of increase of ozone depends on the frequency of the surface discharge. The negative corona, however, does not contribute to the improvement of the ozone generation. (2) NO(nitrogen monoxide) decomposition rate also improves by simultaneously applying the surface and the positive corona discharges. The effect of the corona superposition is more evident when the level of the surface discharge is moderate. (3) By adjusting the corona level, the net energy efficiency during NO decomposition improves in comparison with the simple surface discharge reactor.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.380-380
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• 2010

Currently, organic light-emitting diodes (OLEDs) have been proven of their readiness for commercialization in terms of lifetime and efficiency. In accordance with emerging new technologies, enhancement of light efficiency and extension of application fields are required. Particularly inverted structures, in which electron injection occurs at bottom and hole injection on top, show crucial advantages due to their easy integration with Si-based driving circuits for active matrix OLED as well as large open area for brighter illumination. In order to get better performance and process reliability, usually a proper buffer layer for carrier injection is needed. In inverted top emission OLED, the buffer layer should protect underlying organic materials against destructive particles during the electrode deposition, in addition to increasing their efficiency by reducing carrier injection barrier. For hole injection layers, there are several requirements for the buffer layer, such as high transparency, high work function, and reasonable electrical conductivity. As a buffer material, a few kinds of transition metal oxides for inverted OLED applications have been successfully utilized aiming at efficient hole injection properties. Among them, we chose 2 nm of $WO_3$ between NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] and Au (or Al) films. The interfacial energy-level alignment and chemical reaction as a function of film coverage have been measured by using in-situ ultraviolet and X-ray photoelectron spectroscopy. It turned out that the $WO_3$ interlayer substantially reduces the hole injection barrier irrespective of the kind of electrode metals. It also avoids direct chemical interaction between NPB and metal atoms. This observation clearly validates the use of $WO_3$ interlayer as hole injection for inverted OLED applications.