• 제목/요약/키워드: Tungsten electrode

검색결과 99건 처리시간 0.021초

Fluid Flow and Heat Transfer in a Super high-Pressure Mercury Lamp using CFD

  • Jang, Dong Sig;Lee, Yeon Won;Li, Kui Ming;Parthasarathy, Nanjundan;Choi, Yoon Hwan
    • International Journal of Safety
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    • 제11권2호
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    • pp.5-9
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    • 2012
  • The discharge properties of super high-pressure mercury lamp are due to resistance heating for energy input, and results in temperature increase. The cooling equilibrium state is reached by the heat conduction, convection and radiation. In order to predict the fluid flow and heat transfer in and around the mercury lamp accurately, its visualization is of utmost importance. Such visualization is carried out by CFD program in this study. We focus on Anode shape to calculate four cases, namely AA, AB, AC and AD separately, and compare the temperature distribution and velocity vector in each case to predict cooling capacity and fluid flow properties. It can be concluded that the shape of anode plays an important role that affects the fluid flow and heat transfer in a mercury lamp.

Impact of gate protection silicon nitride film on the sub-quarter micron transistor performances in dynamic random access memory devices

  • Choy, J.-H.
    • 한국결정성장학회지
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    • 제14권2호
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    • pp.47-49
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    • 2004
  • Gate protection $SiN_x$ as an alternative to a conventional re-oxidation process in Dynamic Random Access Memory devices is investigated. This process can not only protect the gate electrode tungsten against oxidation, but also save the thermal budget due to the re-oxidation. The protection $SiN_x$ process is applied to the poly-Si gate, and its device performance is measured and compared with the re-oxidation processed poly-Si gate. The results on the gate dielectric integrity show that etch damage-curing capability of protection $SiN_x$ is comparable to the re-oxidation process. In addition, the hot carrier immunity of the $SiN_x$ deposited gate is superior to that of re-oxidation processed gate.

자동 오비탈 TIG 용접기술을 이용한 배관 용접 (The Use of Orbital TIG Welding Process for the Construction and the Repair of Field Piping)

  • 정인철;심덕남
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2004년도 춘계 학술발표대회 개요집
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    • pp.27-29
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    • 2004
  • Orbital TIG welding process being used fur the new construction, the repair of nuclear piping system ana other critical piping. When weld quality is important or there are a large number of similar weld to be made or when access is restricted with manual torch, Orbital TIG welding is most effective process because of practical for out-of-position and high weld quality. Furthermore, typically superior to manual TIG welding process where the pipe remains in place and the tungsten electrode orbits the weld. As smaller and more compact welding head is being developed, could operate in tight spaces and lend itself to this type of application better than any other welding process. Orbital TIG welding has become more and more field practical process.

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Ca(OH)2촉매를 이용한 플라즈마 반응에 의한 황산화물의 제거에 관한 연구 (A study of decomposition of sulfur oxides using Calcium hydroxide catalyst by plasma reactions)

  • 김다영;우인성;이선희;김도현;김병철
    • 대한안전경영과학회:학술대회논문집
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    • 대한안전경영과학회 2013년 추계학술대회
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    • pp.547-560
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    • 2013
  • In this study, the air pollutant removal such as sulfur oxides was studied. A combination of the plasma discharge in the reactor by the reaction surface discharge reactor Calcium hydroxides catalytic reactor and air pollutants, hazardous gas SOx, changes in gas concentration, change in frequency, the thickness of the electrode, kinds of electrodes and the addition of simulated composite catalyst composed of a variety of gases, including decomposition experiments were performed by varying the process parameters. The experimental results showed the removal efficiency of 98% in the decomposition of sulfur oxides removal experiment when Calcium hydroxides catalysts and the tungsten(W) electrodes were used. It was increased 3% more than if you do not have the catalytic. If added to methane gas was added the removal efficiency increased decomposition.

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염류용액 방전의 온도 측정에 관한 연구 (A Study on the Temperature Measurement Using Optical Emission in Saline Solution Discharge with Pin to Plate Electrodes)

  • 김중균
    • 조명전기설비학회논문지
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    • 제30권1호
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    • pp.66-71
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    • 2016
  • In this study, electrical and spectroscopic characteristics were investigated in the pin to plate discharge of 0.9% weight per unit volume saline solution. The positive and positive- and negative-going dc pulse with 5% duty ratio were applied to tungsten pin electrode. The more amount of discharge current flew in negative discharge. The temperature, which is considered as a local value in the vicinity of vapor of discharge, was about 3,000K which is much higher than the value recommended to be controlled. It can be suggested that not only the temperature of liquid but also the local temperature of vapor is monitored to investigate damages on tissue or cells in biological application.

폴리사이드 형성 조건에 따른 WS $i_{x}$ 박막 특성에 관한 연구 (A Study on the Properties of WS $i_{x}$ Thin Film with Formation Conditions of Polycide)

  • 정양희;강성준;김경원
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제52권9호
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    • pp.371-377
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    • 2003
  • We perform the physical analysis such that Si/W composition ratios and phosphorus distribution change in the W/S $i_{x}$ thin films according to phosphorus concentration of polysilicon and W $F_{6}$ flow rate for the formation of WS $i_{x}$ polycide used as a gate electrode. We report that these physical characteristics have effects on the contact resistance between word line and bit line in DRAM devices. RBS measurements show that for the samples having phosphorus concentrations of 4.75 and 6.0${\times}$10$^{2-}$ atoms/㎤ in polysilicon, by applying W $F_{6}$ flow rates decreases from 4.5 to 3.5 sccm, Si/W composition ratio has increases to 2.05∼2.24 and 2.01∼2.19, respectively. SIMS analysis give that phosphorus concentration of polysilicon for both samples have decreases after annealing, but phosphorus concentration of WS $i_{x}$ thin film has increases by applying W $F_{6}$ flow rates decreases from 4.5 to 3.5 sccm. The contact resistance between word line and bit line in the sample with phosphorus concentration of 6.0 ${\times}$ 10$^{20}$ atoms/㎤ in polysilicon is lower than the sample with 4.75 ${\times}$ 10$^{20}$ atoms/㎤ After applying W $F_{6}$ flow rates decreases from 4.5 to 3.5 sccm, the contact resistance has been improved dramatically from 10.1 to 2.3 $\mu$ $\Omega$-$\textrm{cm}^2$.

텅스텐 실리사이드를 차세대 게이트 전극으로 이용한 MOS 소자의 특성 분석 (Characteristics of Metal-Oxide- Semiconductor (MOS) Devices with Tungsten Silicide for Alternate Gate Metal)

  • 노관종;윤선필;양성우;노용한
    • 대한전자공학회논문지SD
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    • 제38권7호
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    • pp.513-519
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    • 2001
  • Si 과다 텅스텐 실리사이드를 초미세 MOS 소자의 대체 게이트 전극으로 제안하였다. SiO₂위에 텅스텐 실리사이드를 직접 증착하고 급속 열처리를 수행한 결과 낮은 저항을 얻고 불소(F) 확산 또한 무시할 수 있음을 확인하였다. 특히, 800 ℃, 진공 분위기에서 3분간 급속 열처리한 텅스텐 실리사이드의 경우 비저항이 ∼160 μΩ·cm이었고, 불소확산에 의한 산화막의 불균일한 성장도 발견할 수 없었다. 또한, WSix-SiO₂-Si (MOS) 캐패시터의 전기적 특성 분석 결과도 우수하였다.

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졸-겔법으로 제조된 비정질의 텅스텐 산화물 박막과 황산 전해질 계면에서 일어나는 수소의 층간 반응에 대한 전기화학적 특성 (Electrochemical Characteristic on Hydrogen Intercalation into the Interface between Electrolyte of the 0.1N H2SO4and Amorphous Tungsten Oxides Thin Film Fabricated by Sol-Gel Method)

  • 강태혁;민병철;주재백;손태원;조원일
    • 공업화학
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    • 제7권6호
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    • pp.1078-1086
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    • 1996
  • 본 연구에서는 W-IPA(peroxo-polytungstic acid)를 출발 물질로 하는 졸 용액을 ITO(indium tin oxide)가 입혀진 유리판 위에 침적 도포(dip-coating) 방법으로 침적시키고, 이것을 겔화시킨 후에 열처리하여 전기 발색 소자 (electrochromic device, ECD)의 텅스텐 산화물 박막 전극을 만들어 이의 전기화학적인 특성을 고찰하였다. 가장 좋은 전기 화학적 특성을 나타내는 조건은 $2g/10mL(W-IPA/H_2O)$졸 용액에 15회 침적 도포하여 $230{\sim}240^{\circ}C$의 온도로 최종 열처리 한 텅스텐 산화물 박막 전극이었으며, 침적 횟수의 증가에 따라 산화 텅스텐 박막의 두께는 비례하여 증가하였고, 5회 침적 도포 이후에는 1회 침적 도포시 약 $60{\AA}$ 두께로 막이 생성됨을 알 수 있었다. 졸-겔법으로 제조된 텅스텐 산화물 박막 전극은 X-선 회절 분석에 의하여 비정질 구조, 주사 전자 현미경에 의하여 박막 표면은 균일한 것으로 조사되었다. 다중 순환 전류-전위 주사법에 의하여 작성된 전류-전위 곡선에 의하면 순환 횟수가 수백회 이상임에도 불구하고 소 발색은 뚜렷하게 나타났으나, 더욱 많은 순환 횟수에서는 전해질인 황산 수용액 중에서 텅스텐 산화물 박막의 박리 현상이 일어나 소 발색의 전류 밀도는 차츰 감소하였다. 전위 주사 속도를 변화시키면서 순환 전류-전위 주사법에 의하여 작성된 전류-전위 곡선으로부터 구한 전기화학적 특성 값을 이용하여 반응에 참여하는 수소 이온의 확산 계수를 구할 수 있었다.

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이종방전 중첩에 의한 방전 플라스마반응기의 효율개선의 시도 - 연면.직류코로나 방전 중첩형 반응기의 특성 - (A Trial for Improvement of Energy Efficiency of Plasma Reactor by Superposing Two Heterogeneous Discharges - Characteristics of Surface and Corona Discharge Combined Plasma Reactor -)

  • 우인성;;황명환
    • 한국안전학회지
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    • 제15권3호
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    • pp.66-70
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    • 2000
  • In order to cope with environmental problems caused by harmful gases emitted from various industrial sources, a new technology which employs discharge plasma formed in ordinary atmospheric pressure has been intensively investigated in many industrialized nations. Although a plenty of useful outcomes and suggestions have been made public by scientists in this field, few commercial products which effectively decompose pollutant gases have appeared as yet. This is partly because that the energy efficiency of a most effective plasma reactor has not reached a satisfactory level in comparison with those of devices using conventional technologies. In an attempt to solve the problem mentioned above, we noticed to combine heterogeneous electrical discharges. This concepts is based on that each plasma reactor has its specific spatial region in which chemical reaction are active and by electrically affected with another reactor of different type, the activated region would increase - which may lead to cutting down the energy consumption. To prove this concept experimentally, two different discharge equipments, a plane ceramic-based surface discharge electrode and a corona electrode with tungsten needle may, are selected and combined to fabricate a hybrid plasma reactor. The results are summarized as follows; (1) Ozone concentration generated in the plasma region drastically increases when the positive corona discharge is added to the surface discharge. The rate of increase of ozone depends on the frequency of the surface discharge. The negative corona, however, does not contribute to the improvement of the ozone generation. (2) NO(nitrogen monoxide) decomposition rate also improves by simultaneously applying the surface and the positive corona discharges. The effect of the corona superposition is more evident when the level of the surface discharge is moderate. (3) By adjusting the corona level, the net energy efficiency during NO decomposition improves in comparison with the simple surface discharge reactor.

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Tungsten oxide interlayer for hole injection in inverted organic light-emitting devices

  • 김윤학;박순미;권순남;김정원
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.380-380
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    • 2010
  • Currently, organic light-emitting diodes (OLEDs) have been proven of their readiness for commercialization in terms of lifetime and efficiency. In accordance with emerging new technologies, enhancement of light efficiency and extension of application fields are required. Particularly inverted structures, in which electron injection occurs at bottom and hole injection on top, show crucial advantages due to their easy integration with Si-based driving circuits for active matrix OLED as well as large open area for brighter illumination. In order to get better performance and process reliability, usually a proper buffer layer for carrier injection is needed. In inverted top emission OLED, the buffer layer should protect underlying organic materials against destructive particles during the electrode deposition, in addition to increasing their efficiency by reducing carrier injection barrier. For hole injection layers, there are several requirements for the buffer layer, such as high transparency, high work function, and reasonable electrical conductivity. As a buffer material, a few kinds of transition metal oxides for inverted OLED applications have been successfully utilized aiming at efficient hole injection properties. Among them, we chose 2 nm of $WO_3$ between NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] and Au (or Al) films. The interfacial energy-level alignment and chemical reaction as a function of film coverage have been measured by using in-situ ultraviolet and X-ray photoelectron spectroscopy. It turned out that the $WO_3$ interlayer substantially reduces the hole injection barrier irrespective of the kind of electrode metals. It also avoids direct chemical interaction between NPB and metal atoms. This observation clearly validates the use of $WO_3$ interlayer as hole injection for inverted OLED applications.

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