• Economic and Environmental Geology
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• v.55 no.6
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• pp.689-699
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• 2022

The Ssangjeon tungsten deposit is located within the Yeongnam Massif. Within the area a number of hydrothermal quartz veins were formed by narrow open-space filling of parallel and subparallel fractures in the metasedimentary rocks as Wonnam formation, Buncheon granite gneiss, amphibolite and/or pegmatite. Mineral paragenesis can be divided into two stages (stage I, ore-bearing quartz vein; stage II, barren quartz vein) by major tectonic fracturing. Stage I, at which the precipitation of major ore minerals occurred, is further divided into three substages (early, middle and late) with paragenetic time based on minor fractures and discernible mineral assemblages: early, marked by deposition of arsenopyrite with pyrite; middle, characterized by introduction of wolframite and scheelite with Ti-Fe-bearing oxides and base-metal sulfides; late, marked by Bi-sulfides. Fluid inclusion data show that stage I ore mineralization was deposited between initial high temperatures (≥370℃) and later lower temperatures (≈170℃) from H₂O-CO₂-NaCl fluids with salinities between 18.5 to 0.2 equiv. wt. % NaCl of Ssangjeon hydrothermal system. The relationship between salinity and homogenization temperature indicates a complex history of boiling, fluid unmixing (CO₂ effervescence), cooling and dilution via influx of cooler, more dilute meteoric waters over the temperature range ≥370℃ to ≈170℃. Changes in stage I vein mineralogy reflect decreasing temperature and fugacity of sulfur by evolution of the Ssangjeon hydrothermal system with increasing paragenetic time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.71-74
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• 1996

Ta$_2$O$_{5}$ film ale recognized as promising capacitor dielectric for future DRAM\`s. The electrical properties of Ta$_2$O$_{5}$films greatly depend on the heating condition. In the practical fabrication process, several annealing process, such as the annealing of Al in H$_2$(about 40$0^{\circ}C$) and reflow of BPSG (borophosphosilicate glass) film in $N_2$(about 80$0^{\circ}C$), exist after deposition of Ta$_2$O$_{5}$ film. In this paper, we describe the temperature effect on the electrical properties of W/Ta$_2$O$_{5}$/Si structure. The thin film of Ta$_2$O$_{5}$ and tungsten have been deposited on p-si(100) wafer using the sputtering system. The heating temperature was varied from 500 to 90$0^{\circ}C$ in $N_2$for 30min and The degree of temperature is 100\`C. In a log(J/E$^2$) Vs 1/E plot of typical I-V data, we find a linear relationship for the temperature of 500, $600^{\circ}C$ and as deposition. This could indicate Fowler-Nordheim tunneling as the dominant mode of current transports. However, we can not find a linear relationship for the temperature above $700^{\circ}C$. This could not indicate Fowler-Nordheim tunneling as the dominant mode of current transport. The high frequency (1MHz) capacitance-voltage (C-V) of W/Ta$_2$O$_{5}$/Si Capacitor were investigated on the basis of shift in the threshold voltage and dielectric constant. The magnitude of the threshold voltage and dielectric constant depends on the heating temperature, and increases with heating temperature.temperature.

• Korean Chemical Engineering Research
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• v.56 no.6
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• pp.895-900
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• 2018

In this study, the electroless deposition of Co-B and Co-W-B alloy thin films was developed and the effect of B and W contents on the hardness of the alloy thin films were investigated. An amorphous Co alloy film was successfully formed by electroless deposition and the contents of B and W in the film were controlled by varying the concentrations of dimethylamine borane and sodium tungstate dihydrate, which were used as a reducing agent and W source, respectively. The hardness of the thin films increased as the contents of B and W were increased because B and W act as impurities suppressing the propagation of dislocation in a film. In addition, it was found that the content of B and W in the Co alloy films can be increased significantly when aeration is not performed. Finally, the hardness of Co-W-B alloy thin film was improved up to 8.9 (${\pm}0.3$) GPa.

• Tribology and Lubricants
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• v.34 no.6
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• pp.241-246
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• 2018

This research addresses the improvement of tribo-systems, specifically regarding the reduction of friction and wear through tribo-coupling between tetrahedral amorphous carbon (ta-C) with different types of counterpart materials, namely bearing steel (SUJ2), tungsten carbide (WC), stainless steel (SUS304), and alumina ($Al_2O_3$). A second variable in this project is the utilization of different values of duct bias voltage in the deposition of the ta-C coating - 0, 5, 10, 15, and 20 V. The results of this research are expected to determine the optimum duct bias and best counter materials associated with ta-C to produce the lowest friction and wear. Results obtained reveal that the tribo-couple between the ta-C coating and SUJ2 balls produces the lowest friction coefficient and wear rate. In terms of duct bias changes, deposition using 5 V produces the most optimum tribological behavior with lowest friction and wear on the tribo-system. In contrast, the tribo-couple between ta-C with a WC ball causes penetration through the coating surface layer and hence high surface delamination. This study demonstrates that the most effective ta-C coating duct bias is 5 V associated with SUJ2 counter material to produce the lowest friction and wear.

• Journal of the Korean Society for Heat Treatment
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• v.36 no.5
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• pp.298-302
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• 2023

Transparent and conducting tungsten (W) doped indium oxide (IWO) thin films were deposited on the glass substrate by using RF magnetron sputtering and then electron irradiation was conducted to investigate the effect of electron irradiation on the optical and electrical properties of the films. The electron irradiated films showed three x-ray diffraction peaks of the In₂O₃ (222), (431) and (046) planes and the full width at half maximum values are decreased as increased electron irradiation energy. In the atomic force microscope analysis, the surface roughness of as deposited films was 1.70 nm, while the films electron irradiated at 700 eV, show a lower roughness of 1.28 nm. In this study, the figure of merit (FOM) of as deposited films is 2.07 × 10^-3 Ω^-1, while the films electron irradiated at 700 eV show the higher FOM value of 5.53 × 10^-3 Ω^-1. Thus, it is concluded that the post-deposition electron beam irradiation is the one of effective methods to enhance optical and electrical performance of IWO thin films.

• Korean Journal of Materials Research
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• v.2 no.2
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• pp.110-118
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• 1992

When CVD-W films deposited on the reactively sputter-deposited TiN(${\circled1}$), the $NH_3$-RTP (rapid themal processed) TiN(${\circled2}$), and the furnace-annealed TiN submitate (${\circled3}$) by $SiH_4$, reduction, deposition rate is in the order of ${\circled1}>{\circled2}>{\circled3}$ and incubation period of W nucleation is in the order of ${\circled1}{\leq}{\circled2}<{\circled3}$. The longest incubation period of nucleation and lowest deposition rate for the CVD-W on the annealed TiN is due to the incorporation of oxygen from the nitrogen ambient containing some oxygen as contaminant into the TiN film. The higher W deposition rate and the lower incubation period of W nucleation on the RTP-TiN substrate in comparison with those on the sputtered TiN substrate seem to be due to a negative effect of the high compressive stress of the RTP-TiN on the nucleation and growth of W. Also the thickness uniformity of the W film deposited on the TiN substrate by $SiH_4$ reduction turns out to be better than that by $H_2$ reduction.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.239.2-239.2
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• 2016

Numerous studies and approaches have been performed for solar cells to improve their photoelectric conversion efficiencies. Among them, the study for electrode containing transparent conducting oxide (TCO) layers is one of issues as well as for the cell structure based on band theory. In this study, we focused on an interfacial layer between p-type silicon and indium tin oxide (ITO) well-known as TCO materials. According to current-voltage characteristics for the sample with the interfacial layers, the improvement of band alignment between p-type silicon and ITO was observed, and their ohmic properties were enhanced in the proper condition of deposition. To investigate cause of this improvement, spectroscopic ellipsometry and ultraviolet photoelectron spectroscopy were utilized. Using these techniques, band alignment and defect in the band gap were examined. The major materials of the interfacial layer are vanadium oxide and tungsten oxide, which are notable as a hole transfer layer in the organic solar cells. Finally, the interfacial layer was applied to silicon solar cells to see the actual behavior of carriers in the solar cells. In the case of vanadium oxide, we found 10% of improvement of photoelectric conversion efficiencies, compared to solar cells without interfacial layers.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.61-66
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• 2001

$WO_3$ films were multicoated on the microscope slide glass and ITO-coated glass using a tungsten alkoxide type solution by the sol-gel deposition process. The effect of dipping and processing parameters on the structure, optical and electrochemical properties of the film were also investigated. Coating using alkoxide solution was very uniformed for low dipping speed of 0.005 m/s, but thickness variations across the sample became apparent for dipping speeds greater than 0.007 m/s. Electrochemical coloration experiments showed that films fired at lower temperatures color more easily than film fired to > $200^{\circ}C$. Rutherford backscattering spectroscopy studies revealed that $K^+$ ions were uniformly distributed throughout the $WO_3$layer in the colored sample.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2214-2218
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• 2007

The effects of bath temperature on electrochemical behavior, alloy composition, crystallographic structure, morphology and the magnetic properties of electrodeposited Co-Pt-W(P) films were investigated. Electrochemical studies show that alloy electrodeposition has been shifted to more positive potentials and the critical time for nucleation decreased as electrolyte temperature increased. As the temperature increased from 40 oC to 80 oC, tungsten content in the deposit increased, while phosphorus content decreased. The films deposited at T = 40 oC exhibited soft magnetic properties. However, electrodeposited at T = 70 oC, the films exhibited hard magnetic properties. It is also demonstrated that higher temperature more than 70 oC could weaken hard magnetic properties. XRD results indicated that the deposits obtained at 50 oC-70 oC showed enhancement of [00.1] P.O. (preferred orientation) with the bath temperature, which resulted in the stronger perpendicular magnetic anisotropy.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.9
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• pp.1842-1848
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• 2002

Although DLC coatings have good tribological properties, these are dependant on the deposition method, the property of contact surface, and test condition. Humidity, which has little influence on tribological behavior in macro scale, is an important factor of tribological behavior in small devices like MEMS. The objective of this study is to investigate the tribological behavior of DLC coatings with particular attention to their wettability at various humidities. DLC coatings were deposited on Si substrates and tested using a reciprocating friction tester against Si$_3$N$_4$balls at various humidities. The results showed that the tribological behavior of DLC coatings was dependant on relative humidity and wettablility of DLC coatings. Friction coefficient at high relative humidity was higher thar that at low relative humidity. The tungsten-containing DLC coatings had a good wear resistance at low relative humidity whereas DLC coatings derived from argon(Ar)+cesium(Cs) gases showed a good wear resistance at high relative humidity.