• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.120-123
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• 1993

This paper describes the deposition and characteristics of electrochromic tungsten oxide thin films for electrochromic smart windows. Tungsten Oxide thin films(WO$_3$) are deposited by thermal evaporation techniques. By varying deposition parameters, WO$_3$ thin films exhibit different optical properties. The electrochromic devices are consist of ITO glass/ WO$_3$ thin films/ LiClO$_4$-propylene carbonate electrolyte/ counter electrode. The electrochromic properties of tungsten oxide thin films with different deposition condition ale investigated.

• Korean Journal of Materials Research
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• v.23 no.12
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• pp.680-686
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• 2013

Tungsten oxide films were prepared by an electrochemical deposition method for use as the anode in rechargeable lithium batteries. Continuous potentiostatic deposition of the film led to numerous cracks of the deposits while pulsed deposition significantly suppressed crack generation and film delamination. In particular, a crack-free dense tungsten oxide film with a thickness of ca. 210 nm was successfully created by pulsed deposition. The thickness of tungsten oxide was linearly proportional to deposition time. Compositional and structural analyses revealed that the as-prepared deposit was amorphous tungsten oxide and the heat treatment transformed it into crystalline triclinic tungsten oxide. Both the as-prepared and heat-treated samples reacted reversibly with lithium as the anode for rechargeable lithium batteries. Typical peaks for the conversion processes of tungsten oxides were observed in cyclic voltammograms, and the reversibility of the heat-treated sample exceeded that of the as-prepared one. Consistently, the cycling stability of the heat-treated sample proved to be much better than that of the as-prepared one in a galvanostatic charge/discharge experiment. These results demonstrate the feasibility of using electrolytic tungsten oxide films as the anode in rechargeable lithium batteries. However, further works are still needed to make a dense film with higher thickness and improved cycling stability for its practical use.

• Journal of the Korean institute of surface engineering
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• v.26 no.1
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• pp.3-9
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• 1993

Chemical vapor deposited tungsten films were formed in a cold wall reactor at pressures higher (10~120torr) than those conventionally employed (<1torr). SiH4, in addition to H2, was used as the reduction gas. The effects of pressure and reaction temperature on the deposition rate and morphology of the films were ex-amined under the above conditions. No encroachment or silicon consumption was observed in the tungsten de-posited specimens. A high deposition rate of tungsten and a good step coverage of the deposited films were ob-tained at 40~80 torr and at a temperature range of $360~380^{\circ}C$. The surface roughness and the resistivity of the deposited film increased with pressure. The deposition rate of tungsten increased with the total pressure in the reaction chamber when the pressure was below 40 torr, whereas it decreased when the total pressure ex-ceedeed 40 torr. The deposition rate also showed a maximum value at $360^{\circ}C$ regardless of the gas pressure in the chamber. The results suggest that the deposition mechanism varies with pressure and temperature, the surface reac-tion determines the overall reaction rate and (2) at higher pressures(>40 torr) or temperatures(>36$0^{\circ}C$), the rate is controlled by the dtransportation rate of reactive gas molecules. It was shown from XRD analysis that WSi2 and metastable $\beta$-W were also formed in addition to W by reactions between WF6 and SiH4.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.4
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• pp.49-57
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• 1992

Tungsten film was deposited on the TiN surface in a low pressure chemical vapor deposition reactor and chemical reaction mechanism between TiN surface and ($WF_{6}\;and\;SiH_{4}$ was studied. Interaction of ($WF_{6}\;or\;SiH_{4}$ with TiN surface and tungsten was deposited more easily. $WF_6$ reacted with TiN activated the TiN surface to form volatile TiF_4$ and tungsten nuclei were formed. ($SiH_{4}$ was dissociated on the TiN surface to form silicon nuclei. From RBS and AES analysis, we could not detect the impurities(such as Si or TiF$_x$)at the interface between tungsten and TiN. The adhesion at the W/TiN interface became poor when the deposition temperature was below 275$^{\circ}C$.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.8 s.173
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• pp.165-173
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• 2005

This paper presents the results for deposition of micrometer-scale metal lines on glass for the development of TFT-LCD circuit repair-system. Although there had been a few studies in the late 1980's for the deposition of metallic interconnects by laser-induced chemical vapor deposition, those studies mostly used continuous wave lasers. In this work, a third harmonic Nd:YLF laser (351nm) of high repetition rates, up to 10 KHz, was used as the illumination source and W(CO)s was selected as the precursor. General characteristics of the metal deposit (tungsten) such as height, width, morphology as well as electrical properties were examined for various process conditions. Height of the deposited tungsten lines ranged from 35 to 500 m depending on laser power and scan speed while the width was controlled between 50um using a slit placed in the beam path. The resistivity of the deposited tungsten lines was measured to be below $1{\Omega}{\cdotu}um$, which is an acceptable value according to the manufacturing standard. The tungsten lines produced at high scan speed had good surface morphology with little particles around the patterns. Experimental results demonstrated that it is likely that the deposit forms through a hybrid process, namely through the combination of photolytic and pyrolytic mechanisms.

• Journal of the Korean institute of surface engineering
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• v.23 no.1
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• pp.27-33
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• 1990

Thermodynamic analysis on silicon consumpton during the chemical vapor deposition of tungten was carried out by calculation equilibrium concerations of all possible product species utilizing a computer progrom according to VCS.(Villars-Cruise-Smith) algorithm. The calculation could show various reaction paths which dominate the tungsten deposition under different process conditions. According to the calculation, the consumption of silicon can also be reduced at a lower total pressure SiH4 without H2 as the reacting gas is most effective for suppression of the excessive consumption of silicon during the deposition process.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.657-662
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• 2005

In this study, the deposition of micrometer-scale metallic interconnects on LCD glass for the repair of open-circuit type defects is investigated. Although there had been a few studies Since 1980 s for the deposition of metallic interconnects by laser-induced chemical vapor deposition, those studies mostly used continuous wave lasers. In this work, a third harmonic Nd:YLF laser (351nm) of high repetition rates, up to 10 KHz, was used as the illumination source and $W(CO)_6$ was selected as the precursor. General characteristics of the metal deposit (tungsten) such as height, width, morphology as well as electrical properties were examined for various process conditions. Height of the deposited tungsten lines ranged from 35 to 500 nm depending on laser power and scan speed while the width was controlled between $3\~50{\mu}$ using a slit placed in the beam path. The resistivity of the deposited tungsten lines was measured to be below 1 $O\cdot{\mu}m$, which is an acceptable value according to the manufacturing standard. The tungsten lines produced at high scan speed had good surface morphology with little particles around the patterns. Experimental results demonstrated that it is likely that the deposit forms through a hybrid process, namely through the combination of photolytic and pyrolytic mechanisms.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.10
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• pp.113-123
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• 1990

Tungsten film was deposited on the single crystal silicon wafer in a low pressure chemical vapor deposition reactor from silane and tungsten hexafluoride in the temperature range of $250-400^{\circ}C$ Deposition rate was found to be determined by the mass transfer rate of reactants from the gas phase to the safter surface. It was found out that tungsten films deposited contained about 3 atomic $\%$ of silicon and that the crystallinity and the grain size increased as the deposition temperature was increased. The resistivity of the film was measured to be in the range of $7~25{\mu}{\Omega}-cm$ and decreased with increasing deposition temperature. The adhesion of the tungsten film on a silicon surface was measured by the tape peel off test and it was improved with increasing deposition temperature. From the analysis of the gas composition, the reaction pathway to form $SiF_{4}$ and $H_{2}$ was found to be more favorable than HF formation.

• Journal of the Korean institute of surface engineering
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• v.15 no.3
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• pp.138-145
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• 1982

The effects of the simultaneous variations of the ratio of feed gases(H2/N2 Flow ratio), feed gas flow rate (H2/N2, total-flow rate) and partial pressures of TiCl4 (PTiCl41) as well as deposition time and cobalt content of the substrate on the deposition rate of the TiN Coated Cemented Tungsten Carbide Tools were investigated. Deposition was carried out in the temperature range of 930$^{\circ}C$-1080$^{\circ}C$ and an activation energy of 46.5 Kcal/mole can be calculated. Transverse rupture strength was noticeably reduced by the TiN coating on the virgin surfa-ce of Cemented Tungsten Carbide, the extent of which was decreased according to the coa-ting thickness. Microhardness value observed on the work was in the range of 1700∼2000kg/mm, which were in well agreement with the value of bult TiN. The wear resistance of TiN layers was performed by turning test and it was observed that crater and flank resistance remarkably enhanced by TiN coating.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.5
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• pp.689-695
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• 2002

Film compositions are needed in semiconductor manufacturing for such diverse application as production tool qualifications and process development. Surface and interface information is generally provided with Auger electron spectroscopy(AES). In this paper, WSix films were analyzed for structural, electrical, and compositional properties of tungsten silicide thin films produced by low pressure chemical vapor deposition as a function of temperature, DCS post flow, shower head life time, and the silicon to tungsten ratios have been investigated. We find that Si/W composition ratio is increased in the surface and interface of WSix thin films by the DCS post flow process and increasing deposition temperature, respectively. The results obtained in this study are also applicable to process control of WSix deposition for memory device fabrication.