• 한국분말야금학회:학술대회논문집
• /
• 한국분말야금학회 2004년도 International Symposium on Powder Materials and Processing
• /
• pp.50-51
• /
• 2004

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
• /
• pp.571-572
• /
• 2006

Tungsten CMP needs interconnect of semiconductor device ULSI chip and metal plug formation, CMP technology is essential indispensable method for local planarization. This Slurry development also for tungsten CMP is important, slurry of metal wiring material that is used present is depending real condition abroad. It is target that this research makes slurry of efficiency that overmatch slurry that is such than existing because focus and use colloidal silica by abrasive particle to internal production technology development. Compared selectivity of slurry that is developed with competitor slurry using 8" tungsten wafer and 8" oxide wafer in this experiment. And removal rate measures about density change of $H_2O_2$ and Fe particle. Also, corrosion potential and current density measure about Fe ion and Fe particle. As a result, selectivity find 83:1, and expressed similar removal rate and corrosion potential and current density value comparing with competitor slurry.

• 한국재료학회지
• /
• 제24권5호
• /
• pp.249-254
• /
• 2014

Due to their unique properties, tungsten borides are good candidates for the industrial applications where certain features such as high hardness, chemical inertness, resistance to high temperatures, thermal shock and corrosion. In this study, conditions were investigated for producing tungsten boride powder from tungsten oxide($WO_3$) by self-propagating high-temperature synthesis (SHS) followed by HCl leaching techniques. In the first stage of the study, the exothermicity of the $WO_3$-Mg reaction was investigated by computer simulation. Based on the simulation experimental study was conducted and the SHS products consisting of borides and other compounds were obtained starting with different initial molar ratios of $WO_3$, Mg and $B_2O_3$. It was found that $WO_3$, Mg and $B_2O_3$ reaction system produced high combustion temperature and radical reaction so that diffusion between W and B was not properly occurred. Addition of NaCl and replacement of $B_2O_3$ with B successfully solved the diffusion problem. From the optimum condition tungsten boride($W_2B$ and WB) powders which has 0.1~0.9 um particle size were synthesized.

• 세라미스트
• /
• 제10권3호
• /
• pp.86-90
• /
• 2007

Novel photochromic oxide glasses are presented in this section. These glasses are based on phosphate formers containing both tungsten and antimony atoms. Exposure to visible continuous or pulsed laser beam results in an intense photochromic effect witch is shown to occur in the volume of the glass and results in a broad absorption band in the visible and near infrared. This effect was not identified to be related with a structural change and is assumed to be entirely electronic. A change in the absorption coefficient is observed in function of tungsten content, exposure time and increases with beam power. These glasses have been investigated regarding the possibility of holographic data storage using visible lasers sources. Changes in both refractive index and the absorption coefficient were measured using a holographic setup. The modulation of the optical constants is reversible by heat treatment.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1998년도 하계학술대회 논문집 D
• /
• pp.1346-1348
• /
• 1998

Tungsten oxide($WO_3$) thin films were prepared by reactive magnetron sputtering in an $Ar/O_2$ atmosphere from a compressed powder $WO_3$ target and their electrochromic(EC) phenomena were investigated. PEO-$LiClO_4$-PC polymer electrolyte can easely be formed into thin films and showed high transmittance. Such electrolyte have electrochromic properties suitable for large-scale electrochromic devices. For the devices using $WO_3$ thin films of 1500, 2500, $4000{\AA}$ thickness with glass/ITO/$WO_3$/PEO-$LiClO_4$-PC/ITO/glass structure, an optical modulation of $50{\sim}60%$ were obtained at a potential range of $1{\sim}2V$. It has shown that transmittance and reflectance of light could be electrically controlled by low applied voltage.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 1996년도 추계학술대회 논문집
• /
• pp.167-171
• /
• 1996

Chemical mechanical polishing (CMP) has become widely accepted for the planarization of multi-interconnect structures in semiconductor manufacturing. However, perfect planarization is not so easily achieved because it depends on the pattern sensitivity, the large number of controllable process parameters, and the absence of a reliable process model, etc. In this paper, we realized the planarization of deposited oxide layers followed by metal (W) polishing as a replacement for tungsten etchback process for via formation. Atomic force microscope (AFM) is used for the evaluation of pattern topography during CMP. As a result, AFM evaluation is very attractive compared to conventional methods for the measurement of planarity. Moreover, it will contribute to analyze planarization characteristics and establish CMP model.

• 한국세라믹학회지
• /
• 제27권5호
• /
• pp.645-651
• /
• 1990

Effects of excess Si on the properities of the oxide of CVD tungsten silicide were investigated by comparing the characteristics of the two kinds of thermal oxide for CVD-WSi2.7 and WSi3.1 films on the polycrystalline Si film each other. It is reveraled from AES analysis that Si in the surface region of the silicide film is consumed to make composition and resistivity of the silicide film very nonuniform for the case of the oxidation of WSi3.1, while the underlayer polycrystalline Si was consumed for the case of the oxidation of WSi2.7.

• 한국반도체및디스플레이장비학회:학술대회논문집
• /
• 한국반도체및디스플레이장비학회 2005년도 추계 학술대회
• /
• pp.124-128
• /
• 2005

To produce a highly sensitive uncooled microbolometer, the development of a high-performance thermometric material is essential. In this work, amorphous vanadium-tungsten oxide was developed as a thermometric material at a low temperature of $300^{\circ}C$, and the microbolometer, coupled with the material, was designed and fabricated using surface micromachining technology. The vanadium-tungsten oxide showed good properties for application to the microbolometer, Such as a high temperature coefficient of resistance of over -4.0 $\%$/K and good compatibility with the surface micromachining and integrated circuit fabrication process due to its low fabrication temperature. As a result, the uncooled microbolometer could be fabricated with high detectivity over $1.0\;{\times}\;10^9\;cmHz^{1/2}/W$ at a bias current of $7.5\;{\mu}A$ and a chopper frequency of 10-20 Hz

• 마이크로전자및패키징학회지
• /
• 제13권3호
• /
• pp.13-17
• /
• 2006

밀도가 높고 주기적인 배열의 기공과 나노패턴이 된 텅스텐 나노점이 실리콘 산화물/실리콘 기판위에 형성이 되었다. 기공의 지름은 25 nm이고 깊이는 40 nm 이었으며 기공과 기공 사이의 거리는 60 nm이었다. nm 크기의 패턴을 형성시키기 위해서 자기조립물질을 사용했으며 폴리스티렌(PS) 바탕에 벌집형태로 평행하게 배열된 실린더 모양의 폴리메틸메타아크릴레이트(PMMA)의 구조를 형성했다. 폴리메틸메타아크릴레이트를 아세트산으로 제거하여 폴리스티렌만 남아있는 건식 식각용 마스크를 만들었다. 실리콘 산화막은 불소 기반의 화학반응성 식각법을 이용하여 식각했다. nm크기의 트렌치 안에 선택적으로 증착된 텅스텐 나노점을 만들기 위해서 저압화학기상증착(LPCVD)방법을 이용하였다. 텅스텐 나노점과 실리콘 트렌치의 지름은 26 nm 와 30 nm였다.

• 한국분말재료학회지
• /
• 제13권4호
• /
• pp.269-277
• /
• 2006

[ ${\beta}-W(W_3O)$ ] oxide layer on the surface of each W(tungsten) nanopowder produced by the electric explosion of wire(EEW) process were formed during the 1vol.% air passivation process. The oxide layer hindered sintering densification of compacts during SPS process. The oxide phase was reduced to the pure W phase during SPS. The W nanopowder's compacts treated by the hydrogen reduction showed high sintered density of 94.5%. after SPS process at $1900^{\circ}C$.