• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.6
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• pp.1196-1200
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• 2009

This paper proposed a tunable band pass filter. It is two-poles direct capacitive coupled resonator band pass filter which the capacitors of parallel resonators are changed by varactor diodes. The DC bias controls to change the value of capacitance in the parallel resonator for tunning the pass band. To validate the proposed design method, we fabricated the band pass filter which has tunable center frequency from 200MHz to 245MHz.

• Korean Journal of Optics and Photonics
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• v.18 no.2
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• pp.105-110
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• 2007

A tunable band-pass filter of fiber Bragg gratings incorporating the Sagnac loop interferometer configuration is presented. The proposed band-pass filter with extinction ratio 20 dB has practical advantages in terms of price and performance in comparison with the conventional band-pass filter using a circulator.

• Current Optics and Photonics
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• v.3 no.2
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• pp.111-118
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• 2019

The optical characteristics of a tunable flattened-pass-band fiber comb filter, based on the polarization-diversified loop configuration, are investigated using the $Poincar{\acute{e}}$-sphere representation. In the design process, the spectral flatness is checked quantitatively, and the tunability of the pass band is demonstrated experimentally. Theoretical calculations show that the filter also exhibits desirable dispersion and polarization properties. The orientation angles of rotatable wave plates for the wavelength tunability of the filter are obtained. Furthermore, we elaborate on the multiple angle loci produced by degeneracies through the combination of optical elements within the loop of the filter.

• Journal of the Korean Institute of Telematics and Electronics
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• v.8 no.4
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• pp.25-30
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• 1971

Fabrication and measurements of the magnetically tunable YIG band pass or stop filter at X-band are discussed. Using two YIG spheres located at the region of r-f circularly polarized magnetic field between the strip lines, the pass or stop characteristics of the filter are obtained. In the case of band stop, the output level is typically 25db lower than the input power. Contrarily for the pass band, the pass band level is 22db higher than the stop frequency region. The experimental results are in good agreement with the theoretical values of FMR. Further it is shown that the structure can be used for a directional coupler.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.10
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• pp.24-28
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• 1992

A new design method of microstrip wide band VHF tunable bandpass filters using varacter diodes is presented. In the proposed filter both the input and output ports are coupled through capacitors, and an open micro-strip line is inserted between the coupled line in order to obtain the desired degree of coupling. The optimized filter responseses for the frequency range of 220-404MHz by TOUCH-STONE are compared with the measured ones.

• Current Optics and Photonics
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• v.2 no.6
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• pp.563-567
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• 2018

We propose and experimentally demonstrate a simple tunable photonic microwave band-pass filter with high resolution using a reflective semiconductor optical amplifier (RSOA) and an optical time-delay line. The RSOA is used as a gain medium for generating cross-gain modulation (XGM) effect as well as an optical source. The optical source provides narrow spectral width by self-injection locking the RSOA in conjunction with a partial reflection filter with specific center wavelength. Then, when the RSOA is operated in the saturation region and the modulated recursive signal is injected into the RSOA, the recursive signal is inversely copied to the injection locked optical source due to the XGM effect. Also, the tunability of the passband of the proposed microwave filter is shown by controlling an optical time-delay line in a recursive loop.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.675-681
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• 2016

A 41dB gain control range $6^{th}$-order band-pass receiver front-end (RFE) using CMOS switched frequency translated impedance (FTI) is presented in a 40 nm CMOS technology. The RFE consists of a frequency tunable RF band-pass filter (BPF), IQ gm cells, and IQ TIAs. The RF BPF has wide gain control range preserving constant filter Q and pass band flatness due to proposed pre-distortion scheme. Also, the RF filter using CMOS switches in FTI blocks shows low clock leakage to signal nodes, and results in low common mode noise and stable operation. The baseband IQ signals are generated by combining baseband Gm cells which receives 8-phase signal outputs down-converted at last stage of FTIs in the RF BPF. The measured results of the RFE show 36.4 dB gain and 6.3 dB NF at maximum gain mode. The pass-band IIP3 and out-band IIP3@20 MHz offset are -10 dBm and +12.6 dBm at maximum gain mode, and +14 dBm and +20.5 dBm at minimum gain mode, respectively. With a 1.2 V power supply, the current consumption of the overall RFE is 40 mA at 500 MHz carrier frequency.

• Journal of the Optical Society of Korea
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• v.15 no.1
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• pp.82-89
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• 2011

In this paper, we numerically study both band-pass and band-stop plasmonic filters based on Metal-Insulator-Metal (MIM) waveguides and circular ring resonators. The band-pass filter consists of two MIM waveguides coupled to each other by a circular ring resonator. The band-stop filter is made up of an MIM waveguide coupled laterally to a circular ring resonator. The propagating modes of Surface Plasmon Polaritons (SPPs) are studied in these structures. By substituting a portion of the ring core with air, while the outer dimensions of the ring resonator are kept constant, we illustrate the possibility of red-shift in resonant wavelengths in order to tune the resonance modes of the proposed filters. This feature is useful for integrated circuits in which we have limitations on the outer dimensions of the filter structure and it is not possible to enlarge the dimension of the ring resonator to reach to longer resonant wavelengths. The results are obtained by a 2D finite-difference time-domain (FDTD) method. The introduced structures have potential applications in plasmonic integrated circuits and can be simply fabricated.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.166-176
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• 2007

Radio frequency (RF) microelectromechanical systems (MEMS) have been pursued for more than a decade as a solution of high-performance on-chip fixed, tunable and reconfigurable circuits. This paper reviews our research work on RF MEMS switches and switching circuits in the past five years. The research work first concentrates on the development of lateral DC-contact switches and capacitive shunt switches. Low insertion loss, high isolation and wide frequency band have been achieved for the two types of switches; then the switches have been integrated with transmission lines to achieve different switching circuits, such as single-pole-multi-throw (SPMT) switching circuits, tunable band-pass filter, tunable band-stop filter and reconfigurable filter circuits. Substrate transfer process and surface planarization process are used to fabricate the above mentioned devices and circuits. The advantages of these two fabrication processes provide great flexibility in developing different types of RF MEMS switches and circuits. The ultimate target is to produce more powerful and sophisticated wireless appliances operating in handsets, base stations, and satellites with low power consumption and cost.

• Journal of Satellite, Information and Communications
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• v.11 no.4
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• pp.44-47
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• 2016

In these days, interest of systems and services using TVWS(TV White Space) are increased, communication systems and services for TVWS have been actively studied. The unoccupied frequency in TVWS is different according to the geographical location and the time of day. RF systems having a frequency tunable bandpass filter operated in TVWS could be efficiently used. In this paper, a frequency tunable bandpass filter operated in 470 ~ 698MHz is designed and implemented. In consideration of simple control and physical size, the tunable bandpass filter is designed with 2-pole. The implemented tunable bandpass filter has the operating frequency band of 470 ~ 698MHz with control voltages of 1.58 ~ 3.93V, the insertion loss of maximum 4.78dB and the return loss of below 10dB. The implemented frequency tunable bandpass filter can be directly used in the RF receiver for TVWS and the design procedures could be used for developing a high power tunable bandpass filter as the basic research data.