• 한국산학기술학회논문지
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• 제10권6호
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• pp.1196-1200
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• 2009

본 논문에서는 통과대역을 가변하는 대역통과여파기를 제안하였다. 이 여파기의 구조는 2단 Direct Capacitive Coupled 공진기 대역통과여파기이며, 중심주파수의 가변을 위하여 여파기에 사용된 병렬 공진기의 캐패시터를 버렉터 다이오드로 대체하였다. 본 논문에서는 중심주파수 200MHz에서 최대 245MHz까지 가변되는 대역통과여파기를 제작하여 설계 이론의 타당성을 검증하였다.

• 한국광학회지
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• 제18권2호
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• pp.105-110
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• 2007

사냑 고리 광섬유 간섭계의 특성을 이용하여 FBG의 반사특성을 투과특성으로 전환하는 고효율의 파장 선택 필터를 제안하고 수식적으로 분석 및 구현하였다. 제안된 대역 투과 필터는 사냑 고리 간섭계 구조에 FBG를 삽입하여 구현하였다. 고효율의 가변형 파장 선택 필터는 편광조절기에 의해 FBG 브래그 파장영역이외의 영역은 사냑 효과로 광의 세기를 가변적으로 투과하도록 조절하였고, 브래그 파장영역에서는 마이켈슨 간섭효과로 20 dB 이상의 소멸비를 갖는 광 투과를 얻었다.

• Current Optics and Photonics
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• 제3권2호
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• pp.111-118
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• 2019

The optical characteristics of a tunable flattened-pass-band fiber comb filter, based on the polarization-diversified loop configuration, are investigated using the $Poincar{\acute{e}}$-sphere representation. In the design process, the spectral flatness is checked quantitatively, and the tunability of the pass band is demonstrated experimentally. Theoretical calculations show that the filter also exhibits desirable dispersion and polarization properties. The orientation angles of rotatable wave plates for the wavelength tunability of the filter are obtained. Furthermore, we elaborate on the multiple angle loci produced by degeneracies through the combination of optical elements within the loop of the filter.

• 대한전자공학회논문지
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• 제8권4호
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• pp.25-30
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• 1971

직류자계로 가변동조되는 YIG여파기의 설계및 측정을 논하였다. 직각으로 굽힌 박판전송선과 2개의 YIG구를 RF 원형회전자계로 분리되는 곳에 위치시켜 차단및 투과특성을 얻었다. 차단특성은 -25db 였으며 통과특성은 이보다 약간 낮은 22db였다. FMR에 관한 이론치와 실측치는 잘 일치하였으며 방향성결합기로 사용될 수 있음을 보였다.

• 전자공학회논문지A
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• 제29A권10호
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• pp.24-28
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• 1992

A new design method of microstrip wide band VHF tunable bandpass filters using varacter diodes is presented. In the proposed filter both the input and output ports are coupled through capacitors, and an open micro-strip line is inserted between the coupled line in order to obtain the desired degree of coupling. The optimized filter responseses for the frequency range of 220-404MHz by TOUCH-STONE are compared with the measured ones.

• Current Optics and Photonics
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• 제2권6호
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• pp.563-567
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• 2018

We propose and experimentally demonstrate a simple tunable photonic microwave band-pass filter with high resolution using a reflective semiconductor optical amplifier (RSOA) and an optical time-delay line. The RSOA is used as a gain medium for generating cross-gain modulation (XGM) effect as well as an optical source. The optical source provides narrow spectral width by self-injection locking the RSOA in conjunction with a partial reflection filter with specific center wavelength. Then, when the RSOA is operated in the saturation region and the modulated recursive signal is injected into the RSOA, the recursive signal is inversely copied to the injection locked optical source due to the XGM effect. Also, the tunability of the passband of the proposed microwave filter is shown by controlling an optical time-delay line in a recursive loop.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.675-681
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• 2016

A 41dB gain control range $6^{th}$-order band-pass receiver front-end (RFE) using CMOS switched frequency translated impedance (FTI) is presented in a 40 nm CMOS technology. The RFE consists of a frequency tunable RF band-pass filter (BPF), IQ gm cells, and IQ TIAs. The RF BPF has wide gain control range preserving constant filter Q and pass band flatness due to proposed pre-distortion scheme. Also, the RF filter using CMOS switches in FTI blocks shows low clock leakage to signal nodes, and results in low common mode noise and stable operation. The baseband IQ signals are generated by combining baseband Gm cells which receives 8-phase signal outputs down-converted at last stage of FTIs in the RF BPF. The measured results of the RFE show 36.4 dB gain and 6.3 dB NF at maximum gain mode. The pass-band IIP3 and out-band IIP3@20 MHz offset are -10 dBm and +12.6 dBm at maximum gain mode, and +14 dBm and +20.5 dBm at minimum gain mode, respectively. With a 1.2 V power supply, the current consumption of the overall RFE is 40 mA at 500 MHz carrier frequency.

• Journal of the Optical Society of Korea
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• 제15권1호
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• pp.82-89
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• 2011

In this paper, we numerically study both band-pass and band-stop plasmonic filters based on Metal-Insulator-Metal (MIM) waveguides and circular ring resonators. The band-pass filter consists of two MIM waveguides coupled to each other by a circular ring resonator. The band-stop filter is made up of an MIM waveguide coupled laterally to a circular ring resonator. The propagating modes of Surface Plasmon Polaritons (SPPs) are studied in these structures. By substituting a portion of the ring core with air, while the outer dimensions of the ring resonator are kept constant, we illustrate the possibility of red-shift in resonant wavelengths in order to tune the resonance modes of the proposed filters. This feature is useful for integrated circuits in which we have limitations on the outer dimensions of the filter structure and it is not possible to enlarge the dimension of the ring resonator to reach to longer resonant wavelengths. The results are obtained by a 2D finite-difference time-domain (FDTD) method. The introduced structures have potential applications in plasmonic integrated circuits and can be simply fabricated.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권3호
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• pp.166-176
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• 2007

Radio frequency (RF) microelectromechanical systems (MEMS) have been pursued for more than a decade as a solution of high-performance on-chip fixed, tunable and reconfigurable circuits. This paper reviews our research work on RF MEMS switches and switching circuits in the past five years. The research work first concentrates on the development of lateral DC-contact switches and capacitive shunt switches. Low insertion loss, high isolation and wide frequency band have been achieved for the two types of switches; then the switches have been integrated with transmission lines to achieve different switching circuits, such as single-pole-multi-throw (SPMT) switching circuits, tunable band-pass filter, tunable band-stop filter and reconfigurable filter circuits. Substrate transfer process and surface planarization process are used to fabricate the above mentioned devices and circuits. The advantages of these two fabrication processes provide great flexibility in developing different types of RF MEMS switches and circuits. The ultimate target is to produce more powerful and sophisticated wireless appliances operating in handsets, base stations, and satellites with low power consumption and cost.

• 한국위성정보통신학회논문지
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• 제11권4호
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• pp.44-47
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• 2016

TVWS에 대한 관심이 증가하고 있고, TVWS를 이용하는 통신시스템과 서비스에 대한 연구가 활발히 진행되고 있다. TVWS는 사용할 수 있는 주파수가 지역적으로 그리고 시간적으로 다르다. 때문에 TVWS를 이용하는 RF 시스템이 주파수가변 대역통과필터를 사용하면 시스템을 효과적으로 운용할 수 있다. 본 논문에서는 470 ~ 698MHz에서 동작하는 주파수가변 대역통과필터를 설계 및 구현하였다. 그리고 주파수가변 대역통과필터는 제어의 용이성과 크기를 고려해서 2-pole로 설계하였다. 구현한 주파수가변 대역통과필터는 제어전압을 1.58 ~ 3.93V 가변하면 470 ~ 698MHz에서 동작하며, 삽입손실은 최대 4.78dB, 반사손실은 10dB 이하를 갖는 것으로 측정되었다. 본 논문의 주파수가변 대역통과필터는 TVWS에서 동작하는 수신기에 직접 사용이 가능하며, 본 논문에서 사용한 주파수가변 대역통과필터의 설계 절차는 대전력 주파수가변 대역통과필터의 개발을 위한 기초 자료로 활용될 수 있다.