• ETRI Journal
• /
• v.11 no.4
• /
• pp.98-104
• /
• 1989

Closed form solution of nonlinear 2-DEG concentration formula is proposed. This allows us to model continuous 2-DEG charge concentration as the function of gate voltage covering subthreshold region of the I-V curves. Comparisons of the Ids-Vgs characteristics and transconductance with the measured data were performed to show the accuracy of the proposed model. This way we have completely closed form I-V characteristics in subthreshold, triode and saturation region incorporating accurate charge control mechanism for HEMTs.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2005.05a
• /
• pp.321-321
• /
• 2005

• Proceedings of the Korean Vacuum Society Conference
• /
• 2003.08a
• /
• pp.219-219
• /
• 2003

• Proceedings of the Korean Nuclear Society Conference
• /
• 1995.05a
• /
• pp.777-783
• /
• 1995

원전 steam turbine blade 재료로 사용 중인 stellite 6B 및 400계열 martensitic stainless강의 침식 저항성을 향상시키기 위해 reactive magnetron hot cathode sputter ion plating법을 이용하여 TiN을 코팅하였다. 먼저 hot cathode triode system에 의한 전류-전압 특성을 분석하였고, 증착된 TiN 박막의 상확인 및 우선 방위 변화, 그리고 불순물에 대한 substrate bias의 영향을 확인하였다. 또한 mass spectrometer를 이용하여 반응 챔버내에 존재하는 성분들을 정상적으로 분석하였다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.307-309
• /
• 2009

We have fabricated vertical-type organic transistors (static induction transistors; SITs) with built-in nano-triode arrays formed in parallel by a colloidal-lithography technique. Using this technique, we could fabricate a microstructure in a lateral direction within a large-scale organic device without relying on photolithography. The organic transistor showed low operating voltages, high current output, and large transconductance.

• Journal of the Korean Magnetics Society
• /
• v.5 no.5
• /
• pp.726-729
• /
• 1995

We investigated the effects of Sm on the microstructure and magnetic properties of Fe-Co Alloy films prepared by a DC triode sputtering. The magnetostriction was found to be changed with the Sm content from positive to negative values, taking a zero magnetostriction was at about 3 at% Sm. The Sm content dependence of magnetostriction was explained by the formation of Sm enriched amorphous phase surrounding the main bcc (Fe,Co) crystalline phase, which was observed by a high resolution transmission electron microscopy.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.40 no.12
• /
• pp.46-53
• /
• 2003

This paper describes a new linear operational transconductance amplifier (OTA) and its application to the 9th-order Bessel filter. To improve the linearity of the OTA, we employ a mobility compensation technique. The combination of the triode and the subthreshold region transistors can compensate the mobility reduction effect and make the OTA with a good linearity. The proposed OTA shows $\pm$0.32% Gm variation over the input range of $\pm$0.8-V. The total harmonic distortion (THD) was lower than -60-㏈. The 9th-order Bessel filter has been designed using a 0.35-${\mu}{\textrm}{m}$ n-well CMOS process under 3.3-V supply voltage. It shows the cutoff frequency of 8-MHz and the power consumption of 65-mW.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.211-211
• /
• 2000

Carbon nanotubes (CNTs) have been spotlighted as one of promising field emission displays(FEDs). For the first time, to authors knowledge, we have developed the 9" color CNT-FEDs with the resolution of 240x576 lines. The 9" CNT-FEDs with diode-type and triode-type structures are presented. The well-dispersed CNT paste was squeezed onto the metal-patterned cathode glass. For the anode plate, the Y2O2S:Eu, ZnS:Ag,Cl low-voltage phosphors were printed for red, green, and blue colors, respectively. The vacuum-packaged panel maintained the vacuum level of 1x10-7 Torr. The uniform moving images vacuum-packaged panel maintained the vacuum level of 1x10-7 Torr. The uniform moving images were demonstrated at 2 V/um. High brightness of 800, 200, and 150cd/m2 was observed on the green, red, and blue phosphors at V/um, respectively. Field emission characteristics of a triode-type CNT-FED were simulated using a finite element method. the resultant field strength on the cathode was modulated by gate bias and emitted electrons were focused on the anode. A relatively uniform emission image was experimentally achieved at the 800V anode. A relatively uniform emission image was experimentally achieved at the 800V anode and the 50-180 V gate biases. Energy distribution of electrons emitted from CNTs was measured using an energy analyzer. The maximum peak of energy curve corresponded to the Fermi energy level of CNTs. The whole fabrication processed of CNT-FEDs were fully scalable and reproducible. Our CNT-FEDs has demonstrated the high potential of large-area and full-color applications with very low cost fabrication and low power consumption.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.171.1-171.1
• /
• 2015

Carbon nanotube emitters is very promising electron emitter for electron beam applications. We introduced the carbon nanotube electron beam (C-beam) exposure technic using triode structure. As a source, the electron beam emit from CNT emitters placed at the cathode by high electric field. Through the gate mesh, with high accelerating energy, the electron can be extracted easily and impact at the anode plate. For thin film modification, after the C-beam exposure on the amorphous silicon thin film, we found phase changes and it showed a high crystallinity from the Raman measurement. We expect that this crystallized film will be a good candidate as a new active layer of TFT.

• 전자공학회논문지 IE
• /
• v.44 no.3
• /
• pp.1-5
• /
• 2007

A new field emission tip array was realized by Ti silicidation of Ti coated Si tip, which has long term durability, chemical stability, and high emission current density. The fabricated Ti silicided FE tip array under high vacuum condition of about $10^{-8}Torr$ shows that the turn-on voltage is about 40V and the emission current is about $69{\mu}A$ when the bias of 150V is applied between anode and cathode of $100{\mu}m$ distance.