• Title/Summary/Keyword: Tri-layer

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Bending Displace Improvement of Electro-active Paper Using Conductive Polyaniline Coating (전도성 폴리아닐린(Polyaniline)을 이용한 전기작동 종이(EAPap)의 굽힘변형 개선)

  • Kim, Joo-Hyung;Yun, Sung-Yuel;Kim, Jae-Hwan
    • Transactions of the Korean Society for Noise and Vibration Engineering
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    • v.18 no.12
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    • pp.1310-1316
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    • 2008
  • Bi-layer and tri-layer structures of electro-active paper(EAPap) using conductive polyaniline(PANI) coating were investigated to improve bending displacement of cellulose EAPap. Two different counter ions, perchlorate($CIO_4^-$) and tetrafluoroborate($BF_4^-$), are used as dopant ions in the PANI processing. The actuation performances of hi-layer and tri-layer structure are evaluated in terms of tip displacement, blocked force, strain energy density and power output density. The actuation performance of the tri-layer actuator was better than the hi-layer structure, and the maximum displacement and blocked force of tri-layer $CIO_4^-$ doped-PANI-EAPap were 13.2 mm and 0.15 mN, respectively. Also the power output of the actuator is similar to the required power of biological muscle application.

Effect of Channel and Gate Structures on Electrical Characteristics of Oxide Thin-Film Transistors (Channel과 gate 구조에 따른 산화물 박막트랜지스터의 전기적 특성 연구)

  • Kong, Heesung;Cho, Kyoungah;Kim, Jaybum;Lim, Junhyung;Kim, Sangsig
    • Journal of IKEEE
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    • v.26 no.3
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    • pp.500-505
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    • 2022
  • In this study, we designed oxide thin-film transistors (TFTs) with dual gate and tri layered split channels, and investigated the structural effect of the TFTs on the electrical characteristics. The dual gates played a key role in increasing the driving current, and the channel structure of tri layers and split form contributed to the increase in the carrier mobility. The tri layered channels consisting of the a-ITGZO and two ITO layers inserted between the gate dielectric and a-ITGZO led to the increase in the on-current by using ITO layers with high conductivity, and the split channels lowered series resistance of the channels. Compared with the mobility (15 cm2/V·s) of the single gate a-ITGZO TFT, the mobility (134 cm2/V·s) of the dual gate tri-layer split channel TFT was remarkably enhanced by the structural effect.

Electrochemical Properties of Trimethylammonium Tetrafluoroborate in Electrochemical Double-Layer Capacitors

  • Lee, Sooyeon;Lee, Kyung Min;Kim, Ketack
    • Journal of Electrochemical Science and Technology
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    • v.13 no.2
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    • pp.254-260
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    • 2022
  • Trimethylammonium tetrafluoroborate (TriMA BF4), consisting of the smallest trialkylammonium ion, was investigated for use in electrochemical double-layer capacitors. Despite the presence of a proton in TriMA+, cycle life tests in acetonitrile (AN) and -butyrolactone (GBL) showed a good capacity retention with a 1.8 V cut-off voltage. The rate of electrolysis of TriMA BF4 in GBL was lower than that in AN because of the lower conductivity in GBL. As a consequence, the cells based on GBL achieved a higher capacitance and longer life than those with AN. TriMA BF4 had a higher conductivity and lower viscosity than the quaternary salt tetraethylammonium tetrafluoroborate in GBL, as well as higher ionic mobility, these factors resulted in a higher rate capability.

Effect of Post-deposition Rapid Thermal Annealing on the Electrical and Optical Properties of ZTO/Ag/ZTO Tri-layer Thin Films (급속열처리에 따른 ZTO/Ag/ZTO 박막의 전기적, 광학적 특성 개선 효과)

  • Song, Young-Hwan;Eom, Tae-Young;Heo, Sung-Bo;Kim, Daeil
    • Journal of the Korean Society for Heat Treatment
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    • v.30 no.4
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    • pp.151-155
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    • 2017
  • The ZTO single layer and ZTO/Ag/ZTO tri-layer films were deposited on glass substrates by using the radio frequency (RF) and direct current (DC) magnetron sputtering and then rapid thermal annealed (RTA) in a low pressure condition for 10 minutes at 150 and $300^{\circ}C$, respectively. As deposited tri-layer films show the 81.7% of visible transmittance and $4.88{\times}10^{-5}{\Omega}cm$ of electrical resistivity, while the films annealed at $300^{\circ}C$ show the increased visible transmittance of 82.8%. The electrical resistivity also decreased as low as $3.64{\times}10^{-5}{\Omega}cm$. From the observed results, it is concluded that rapid thermal annealing (RTA) is an attractive post-deposition process to optimize the opto-elecrtical properties of ZTO/Ag/ZTO tri-layer films for the various display applications.

The study of High-efficiency method usign Tri-crystalline Silicon solar cells (삼결정 실리콘 태양전지의 19%변환 효율 최적요건 고찰에 관한 연구)

  • 이욱재;박성현;고재경;김경해;이준신
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.318-321
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    • 2002
  • This paper presents a proper condition to achieve high conversion efficiency using PC1D simulator on sri-crystalline Si solar cells. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer, BSF thickness and doping concentration were investigated. Optimized cell parameters were given as rear surface recombination of 1000 cm/s, minority carrier diffusion length in the base region 200 $\mu\textrm{m}$, front surface recombination velocity 100 cm/s, sheet resistivity of emitter layer 100 Ω/$\square$, BSF thickness 5 $\mu\textrm{m}$, doping concentration 5${\times}$10$\^$19/ cm$\^$-3/. Among the investigated variables, we learn that a diffusion length of base layer acts as a key factor to achieve conversion efficiency higher than 19 %.

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Formation of Submicron Top Pattern by using Tri-Layer Resist Structure (심층 레지스터 구조를 이용한 서브미크론 상층패턴 형성)

  • 심규환;양전욱;이진희;강진영;마동성
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.5
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    • pp.495-500
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    • 1988
  • The effectiveness of tri layer resist (TLR) technique is compared with that of single layer resist (SLR) technique in order to make a 0.8um pattern with the linewidth deviation of 10 percents. SLR technique is not appropriate to shape the micro-pattern on oxide and aluminum steps because of the standing wave effect and the light scattering effect in shaping the resist pattern. On the contrary, the uniform line with a width of 0.8um on oxide and aluminum steps can be formed by TLR technique, reducting such effects. The planarization and the light absorption coefficient of the bottom layer resist in TLR are optimized by exposing it to ultra violet light after baking it for 30min at 230\ulcorner. An uniform line with a width of 0.8um on oxide step is defined with the light absorption coefficient of 0.85 whereas that on aluminum step is defined with 0.95.

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Color Matching in Production of Tri-color Fluorescent Lamp Coated by Single and Double Layer (단일 및 이중도포에 의한 삼파장형광등의 제조시 목표광색의 조합에 관한 연구)

  • 김성래;하백현
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.13 no.1
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    • pp.9-14
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    • 1999
  • One of the IIDSt difficult problems in a tri-band fluorescent lamp manufacture is to search a desired color by an adequate mixing of tri-color phosphors. When a light spectrum of a phosphor is slightly changw or distorted due to process variable or when another spectrum such as from Ar, Kr or a iDosphor of calcium halo-phosphate as a first layer exist, it is even rrnre difficult to search a desired color. In this work, a rapid awuaching rrethod to a desired light color was studied. 1bree single-color fluorescent lamps and three-color-mixed fluorescent lamps with different mixing ratios were prepared and the spectra of these lamps were measured, from which the rrercury and the argon spectra were eliminatffl to obtain the rrndifiw color coordinates. From this rrndifiw color coordinate, h.lIlHl ratios of green and blue to red were correlatffl with their weight ratios. This correlation was awliw to the industrial line for single and double layer coating and proven to be valuable as a desired color matching procWure in tri-color fluorescent lamp manufacture.acture.

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Thermal Stability Improvement or Ni Germanosilicide Using NiPt/Co/TiN and the Effect of Ge Fraction (x) in $Si_{l-x}Ge_x$ (NiPt/Co/TiN을 이용한 Ni Germanosilicide 의 열안정성 향상 및 Ge 비율 (x) 에 따른 특성 분석)

  • Yun Jang-Gn;Oh Soon-Young;Huang Bin-Feng;Kim Yong-Jin;Ji Hee-Hwan;Kim Yong-Goo;Cha Han-Seob;Heo Sang-Bum;Lee Jeong-Gun;Wang Jin-Suk;Lee Hi-Deok
    • Proceedings of the IEEK Conference
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    • 2004.06b
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    • pp.391-394
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    • 2004
  • In this study, highly thermal stable Ni Germanosilicide has been utilized using NiPt alloy and novel NiPt/Co/TiN tri-layer. And, the Ni Germanosilicide Properties were characterized according to different Ge ratio (x) in $Si_{l-x}Ge_x$ for the next generation CMOS application. The sheet resistance of Ni Germanosilicide utilizing pure-Ni increased dramatically after the post-silicidation annealing at $600^{\circ}C$ for 30 min. Moreover, more degradation was found as the Ge fraction increases. However, using the proposed NiPt/Co/TiN tri-layer, low temperature silicidation and wide range of RTP process window were achieved as well as the improvement of the thermal stability according to different Ge fractions by the subsequent Co and TiN capping layer above NiPt on the $Si_{l-x}Ge_x$. Therefore, highly thermal immune Ni Germanosilicide up to $600^{\circ}C$ for 30 min is utilized using the NiPt/Co/TiN tri-layer promising for future SiGe based ULSI technology.

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Figure of merit and bending characteristics of Mn-SnO2/Ag/Mn-SnO2 tri-layer film (Mn-SnO2/Ag/Mn-SnO2 3중 다층막의 성능지수와 밴딩 특성)

  • Cho, Youngsoo;Jang, Guneik
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.31 no.4
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    • pp.190-195
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    • 2021
  • Typical Mn-SnO2/Ag/Mn-SnO2 tri-layer films were prepared on a PET substrate by RF/DC magnetron sputtering method at room temperature. Based on EMP simulation, the thicknesses of the top and bottom Mn-doped SnO2 layers were kept at 40 nm and the Ag layer was maintained at 13 nm for continuous electrical conduction. The experimentally measured optical transmittances at 550 nm wavelength were ranged from 82.9 to 88.1 % and sheet resistances were varied from 5.9 to 6.9 Ω/☐. The highest value of figure of merit, ϕTC was 48.1 × 10-3 Ω-1. Based on bending test under 4 and 5 mm of inner and outer curvature radius condition, tri-layer film resistance varies only by approximately 1.5 % after 10,000 bending cycles, showing excellent mechanical flexibility.

The Activity Coefficients of Tri-n-butylphosphate and Europium Complex in the Extraction of Europium by Tri-n-butylphosphate in Nitric Acid Solution (질산유로퓸을 TBP 로 추출할때 TBP와 유로퓸착물의 활동도계수간의 관계)

  • Gang, Ik Gyun
    • Journal of the Korean Chemical Society
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    • v.18 no.4
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    • pp.272-277
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    • 1974
  • A relationship between the activity coefficients of tri-n-butylphosphate(TBP) and europium complex was studied in the extraction of europium by TBP in nitric acid solution. Diluents chosen are cyclohexane, toluene, benzene and chlorobenzene. Concentrations of TBP were varied from 5 to 50 by volume percent and the composition of inorganic layer was kept constant. A method of estimating the solubility parameter of TBP is suggested.

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