• Nuclear Engineering and Technology
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• v.56 no.9
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• pp.3961-3968
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• 2024

The Korea Atomic Energy Research Institute (KAERI) is developing a novel Two-Region Arc Plasma Ion Source (TRAP) as a negative hydrogen (deuterium) ion source for a Neutral Beam Injection (NBI) system in a fusion tokamak. The TRAP ion source is based on a two-region configuration, comprising a high energy electron region that creates highly vibrationally excited molecules and a low electron temperature region that generates negative ions by attaching electrons to molecules. This configuration can be achieved by optimizing the filament position and magnetic cusp field. In order to optimize the TRAP configuration, the plasma parameters are investigated under various operating conditions, such as filament position, gas pressure, and arc power. Electron density and temperature are determined using Langmuir probe measurements. In this paper, the detailed experimental results are described and discussed.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 2000.04a
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• pp.255-260
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• 2000

• Proceedings of the Plant Resources Society of Korea Conference
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• 2018.10a
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• pp.43-43
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• 2018

Mutation breeding by radiation is useful for improving various crop species. Up to now, a total of 170 soybean mutant varieties have been released in the world, which is the second most registered varieties after rice. Despite the economic importance of soybean, there have been no TRAP marker system studies on genetic relationships between/among mutant lines. To develop a strategy of Mutant Diversity Pool (MDP) conservation, a study on the genetic diversity of 210 soybean mutant lines (8 cultivars and 202 mutants) was performed through a TRAP analysis. Sixteen primer combinations amplified a total of 551 fragments. The highest (84.00%) and lowest (32.35%) polymorphism levels were obtained with primers MIR157B + Ga5 and B14G14B + Ga3, respectively. The mean PIC values 0.15 varied among the primer combination ranging from 0.07 in B14G14B + Sal2 to 0.23 in MIR157B + Sa4. Phylogenetic, principal component analysis (PCA) and structure analysis indicated that the 210 lines belong to four groups based on the 16 combination TRAP markers. AMOVA showed 21.0% and 79.0% variations among and within the population, respectively. Overall, the genetic similarity of each cultivar and its mutants were higher than within other mutant populations. Our results suggest that the TRAP marker system may be useful for assessing the genetic diversity among soybean mutants and help to improve our knowledge of soybean mutation breeding.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.624-629
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• 2006

The energy transfer process between GaN and Nd ions as well as Mg codoping effect were investigated in Nd-implanted GaN films. Photoluminescence (PL) and PL excitation spectroscopies were performed on $^4F_{3/2}{\rightarrow}^4I_{9/2}$ Nd ionic level transition. At least three below bandgap traps were identified in the energy transfer process. The number of one particular trap, which is assigned to be an isoelectronic Nd trap, is increased with the Mg-codoping. The emission efficiency with above gap excitation, which emulates the electrical excitation, is further increased in GaN:Mg,Nd.

• Journal of the Optical Society of Korea
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• v.9 no.3
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• pp.87-91
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• 2005

The strontium magneto optical trap followed by a Zeeman slower has been demonstrated. The isotope selective characteristics of the trap have been investigated. The fluorescence spectrum of the MOT was compared with those of other high resolution spectroscopic methods. The red detuned deflection beam is also considered for a more selective spectrum.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.487-487
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• 2013

According to shrinkage of transistor, interface traps have been recognized as a major factor which limits the process development in manufacturing industry. The traps occur through spontaneous generation process, and spread into the forbidden band. There is a large change of current though a few traps are existed at the Si-SiO2 interface. Moreover, the increased temperature largely affects to the leakage current due to the interface trap. For this reason, we made an effort to find out the relationship between temperature and interface trap. The subthreshold swing (SS) was investigated to confirm the correlation. The simulated results show that the sphere of influence of trap is enlarged according to increase in temperature. To investigate the relationship between thermal energy and surface potential, we extracted the average surface potential and thermal energy (kT) according to the temperature. Despite an error rate of 6.5%, change rates of both thermal energy and average surface potential resemble each other in many ways. This allows that SS is affected by the trap within the range of the thermal energy from the surface energy.

• Journal of the Korean Ceramic Society
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• v.31 no.5
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• pp.529-537
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• 1994

The principle of the Isothermal Capacitance Transient Spectroscopy[ICTS] were explained to measure the electronic trap levels in oxide ceramics. The measurement apparatus and the theory of the ICTS were described in detail. The trap energy evaluation was performed for the ZnO varistor and BaTiO3 ceramics. The grain boundary interface trap levels were detected at -5$0^{\circ}C$~6$0^{\circ}C$ in the case of ZnO varistor and PTCR samples, and the bulk trap levels were detected at 2$0^{\circ}C$~60~ in BaTiO3. The trap energy levels of the above samples could be directly determined by ICTS measurement.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.134-137
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• 2019

In this paper, the data retention characteristics were analyzed to find out the thickness effect on the trap energy distribution of silicon nitride in the silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices. The nitride films were prepared by low pressure chemical vapor deposition (LPCVD). The flat band voltage shift in the programmed device was measured at the elevated temperatures to observe the thermal excitation of electrons from the nitride traps in the retention mode. The trap energy distribution was extracted using the charge decay rates and the experimental results show that the portion of the shallow interface trap in the total nitride trap amount including interface and bulk trap increases as the nitride thickness decreases.

• Transactions on Electrical and Electronic Materials
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• v.15 no.6
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• pp.328-332
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• 2014

Thin film transistors (TFTs) with an amorphous silicon zinc tin oxide (a-2SZTO) channel layer have been fabricated using an RF magnetron sputtering system. The effect of the change of excitation electron on the variation of the total interfacial trap states of a-2SZTO systems was investigated depending on sputtering power, since the interfacial state could be changed by changing sputtering power. It is well known that Si can effectively reduce the generation of the oxygen vacancies. However, The a-2SZTO systems of ZTO doped with 2 wt% Si could be degraded because the Si peripheral electron belonging to a p-orbital affects the amorphous zinc tin oxide (a-ZTO) TFTs of the s-orbital overlap structure. We fabricated amorphous 2 wt% Si-doped ZnSnO (a-2SZTO) TFTs using an RF magnetron sputtering system. The a-2SZTO TFTs show an improvement of the electrical property with increasing power. The a-2SZTO TFTs fabricated at a power of 30 W showed many of the total interfacial trap states. The a-2SZTO TFTs at a power of 30 W showed poor electrical property. However, at 50 W power, the total interfacial trap states showed improvement. In addition, the improved total interfacial states affected the thermal stress of a-2SZTO TFTs. Therefore, a-2SZTO TFTs fabricated at 50 W power showed a relatively small shift of threshold voltage. Similarly, the activation energy of a-2SZTO TFTs fabricated at 50 W power exhibits a relatively large falling rate (0.0475 eV/V) with a relatively high activation energy, which means that the a-2SZTO TFTs fabricated at 50 W power has a relatively lower trap density than other power cases. As a result, the electrical characteristics of a-2SZTO TFTs fabricated at a sputtering power of 50 W are enhanced. The TFTs fabricated by rf sputter should be carefully optimized to provide better stability for a-2SZTO in terms of the sputtering power, which is closely related to the interfacial trap states.

• 전기의세계
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• v.29 no.8
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• pp.511-518
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• 1980

The thermostimulated discharge currents of low-density polyethylene electrets were measured versus the principal experimental variables. Several electrode types were used for the charging and discharging procedures. The results led to know the experimental conditions for the heterocharge and homocharge accumulating and decreasing. The electronic structure parameters of polyethylene such as trap level, density of traps, hopping length, mobility, trap time constants were deduced. A method for evaluating the local electric field inside the electret is proposed.