• 한국에너지공학회:학술대회논문집
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• 한국에너지공학회 2000년도 춘계 학술발표회 논문집
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• pp.255-260
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• 2000

• 한국자원식물학회:학술대회논문집
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• 한국자원식물학회 2018년도 추계학술대회
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• pp.43-43
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• 2018

Mutation breeding by radiation is useful for improving various crop species. Up to now, a total of 170 soybean mutant varieties have been released in the world, which is the second most registered varieties after rice. Despite the economic importance of soybean, there have been no TRAP marker system studies on genetic relationships between/among mutant lines. To develop a strategy of Mutant Diversity Pool (MDP) conservation, a study on the genetic diversity of 210 soybean mutant lines (8 cultivars and 202 mutants) was performed through a TRAP analysis. Sixteen primer combinations amplified a total of 551 fragments. The highest (84.00%) and lowest (32.35%) polymorphism levels were obtained with primers MIR157B + Ga5 and B14G14B + Ga3, respectively. The mean PIC values 0.15 varied among the primer combination ranging from 0.07 in B14G14B + Sal2 to 0.23 in MIR157B + Sa4. Phylogenetic, principal component analysis (PCA) and structure analysis indicated that the 210 lines belong to four groups based on the 16 combination TRAP markers. AMOVA showed 21.0% and 79.0% variations among and within the population, respectively. Overall, the genetic similarity of each cultivar and its mutants were higher than within other mutant populations. Our results suggest that the TRAP marker system may be useful for assessing the genetic diversity among soybean mutants and help to improve our knowledge of soybean mutation breeding.

• 한국진공학회지
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• 제15권6호
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• pp.624-629
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• 2006

Nd을 이온주입한 GaN를 이용하여 GaN와 Nd 이온 사이의 에너지 전달과정을 분석하고 Mg을 도핑 하였을 때의 효과를 보았다. Nd의 $^4F_{3/2}{\rightarrow}^4I_{9/2}$ 전이에 대하여 Photoluminescence (PL)와 PL excitation 방법을 이용하여 에너지 전달 경로에 적어도 3가지 이상의 밴드갭 내의 trap이 있음을 확인하였다. Mg이 doping된 GaN : Nd에서는 isoelectronic trap으로 생각되는 특정한 trap의 수가 증가되었음이 관측되었고 이로 인해 전기적으로 여기될 시료의 특성을 보여줄 밴드갭보다 큰 에너지를 이용한 여기 상태의 효율이 더욱 높아짐을 알 수 있었다.

• Journal of the Optical Society of Korea
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• 제9권3호
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• pp.87-91
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• 2005

The strontium magneto optical trap followed by a Zeeman slower has been demonstrated. The isotope selective characteristics of the trap have been investigated. The fluorescence spectrum of the MOT was compared with those of other high resolution spectroscopic methods. The red detuned deflection beam is also considered for a more selective spectrum.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.487-487
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• 2013

According to shrinkage of transistor, interface traps have been recognized as a major factor which limits the process development in manufacturing industry. The traps occur through spontaneous generation process, and spread into the forbidden band. There is a large change of current though a few traps are existed at the Si-SiO2 interface. Moreover, the increased temperature largely affects to the leakage current due to the interface trap. For this reason, we made an effort to find out the relationship between temperature and interface trap. The subthreshold swing (SS) was investigated to confirm the correlation. The simulated results show that the sphere of influence of trap is enlarged according to increase in temperature. To investigate the relationship between thermal energy and surface potential, we extracted the average surface potential and thermal energy (kT) according to the temperature. Despite an error rate of 6.5%, change rates of both thermal energy and average surface potential resemble each other in many ways. This allows that SS is affected by the trap within the range of the thermal energy from the surface energy.

• 한국세라믹학회지
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• 제31권5호
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• pp.529-537
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• 1994

The principle of the Isothermal Capacitance Transient Spectroscopy[ICTS] were explained to measure the electronic trap levels in oxide ceramics. The measurement apparatus and the theory of the ICTS were described in detail. The trap energy evaluation was performed for the ZnO varistor and BaTiO3 ceramics. The grain boundary interface trap levels were detected at -5$0^{\circ}C$~6$0^{\circ}C$ in the case of ZnO varistor and PTCR samples, and the bulk trap levels were detected at 2$0^{\circ}C$~60~ in BaTiO3. The trap energy levels of the above samples could be directly determined by ICTS measurement.

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.134-137
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• 2019

In this paper, the data retention characteristics were analyzed to find out the thickness effect on the trap energy distribution of silicon nitride in the silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices. The nitride films were prepared by low pressure chemical vapor deposition (LPCVD). The flat band voltage shift in the programmed device was measured at the elevated temperatures to observe the thermal excitation of electrons from the nitride traps in the retention mode. The trap energy distribution was extracted using the charge decay rates and the experimental results show that the portion of the shallow interface trap in the total nitride trap amount including interface and bulk trap increases as the nitride thickness decreases.

• Transactions on Electrical and Electronic Materials
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• 제15권6호
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• pp.328-332
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• 2014

Thin film transistors (TFTs) with an amorphous silicon zinc tin oxide (a-2SZTO) channel layer have been fabricated using an RF magnetron sputtering system. The effect of the change of excitation electron on the variation of the total interfacial trap states of a-2SZTO systems was investigated depending on sputtering power, since the interfacial state could be changed by changing sputtering power. It is well known that Si can effectively reduce the generation of the oxygen vacancies. However, The a-2SZTO systems of ZTO doped with 2 wt% Si could be degraded because the Si peripheral electron belonging to a p-orbital affects the amorphous zinc tin oxide (a-ZTO) TFTs of the s-orbital overlap structure. We fabricated amorphous 2 wt% Si-doped ZnSnO (a-2SZTO) TFTs using an RF magnetron sputtering system. The a-2SZTO TFTs show an improvement of the electrical property with increasing power. The a-2SZTO TFTs fabricated at a power of 30 W showed many of the total interfacial trap states. The a-2SZTO TFTs at a power of 30 W showed poor electrical property. However, at 50 W power, the total interfacial trap states showed improvement. In addition, the improved total interfacial states affected the thermal stress of a-2SZTO TFTs. Therefore, a-2SZTO TFTs fabricated at 50 W power showed a relatively small shift of threshold voltage. Similarly, the activation energy of a-2SZTO TFTs fabricated at 50 W power exhibits a relatively large falling rate (0.0475 eV/V) with a relatively high activation energy, which means that the a-2SZTO TFTs fabricated at 50 W power has a relatively lower trap density than other power cases. As a result, the electrical characteristics of a-2SZTO TFTs fabricated at a sputtering power of 50 W are enhanced. The TFTs fabricated by rf sputter should be carefully optimized to provide better stability for a-2SZTO in terms of the sputtering power, which is closely related to the interfacial trap states.

• 전기의세계
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• 제29권8호
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• pp.511-518
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• 1980

The thermostimulated discharge currents of low-density polyethylene electrets were measured versus the principal experimental variables. Several electrode types were used for the charging and discharging procedures. The results led to know the experimental conditions for the heterocharge and homocharge accumulating and decreasing. The electronic structure parameters of polyethylene such as trap level, density of traps, hopping length, mobility, trap time constants were deduced. A method for evaluating the local electric field inside the electret is proposed.

• Interdisciplinary Bio Central
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• 제5권4호
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• pp.9.1-9.7
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• 2013

Introduction: Tumor necrosis factor receptor-associated protein 1 (TRAP1) is a mitochondrial heat shock protein (HSP), which belongs to HSP90 family. It plays important roles in regulating mitochondrial integrity, protecting against oxidative stress, and inhibiting cell death. Recent studies suggest that TRAP1 is linked to mitochondria and its metabolism. In this study, we established TRAP1 transgenic mice and performed partial hepatectomy (PH) on wild-type (WT) and TRAP1 transgenic mice to investigate the function of TRAP1 during liver regeneration. Results and Discussion: We found that TRAP1 was highly expressed in liver as well as kidney. In addition, liver regeneration slightly decreased together with increased fatty liver and inflammation at 72 hr after PH in TRAP1 transgenic mice compared with WT control group mice. Concomitantly, we observed decreased levels of p38 protein in TRAP1 transgenic mice compared with WT control group mice. These results suggest that TRAP1 plays a critical role in liver energy balance by regulating lipid accumulation during liver regeneration. Conclusions and Prospects: To our knowledge, we reported, for the first time, that liver regeneration slightly reduced together with increased fat accumulations after PH in TRAP1 transgenic mice compared with WT control group mice. Concomitantly, we observed decreased levels of p38 protein in TRAP1 transgenic mice compared with WT control group mice. Overexpression of TRAP1 might affect liver regeneration via disturbing mitochondrial function leading to fatty liver in vivo.