• Title/Summary/Keyword: Trap System

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Effect of Negative Oxygen Ions Accelerated by Self-bias on Amorphous InGaZnO Thin Film Transistors

  • Kim, Du-Hyeon;Yun, Su-Bok;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.466-468
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    • 2012
  • Amorphous InGaZnO (${\alpha}$-IGZO) thin-film transistors (TFTs) are are very promising due to their potential use in thin film electronics and display drivers [1]. However, the stability of AOS-TFTs under the various stresses has been issued for the practical AOSs applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the ${\alpha}$-IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of ${\alpha}$-IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of ${\alpha}$-IGZO thin film. In this paper, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in ${\alpha}$-IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of ${\alpha}$-IGZO TFTs by this new deposition method.

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Characteristics of Particle Separation in Suspension using an Ultrasonic Standing Wave

  • Shin, Beom-Soo;Danao, Mary-Grace C.
    • Journal of Biosystems Engineering
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    • v.37 no.2
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    • pp.113-121
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    • 2012
  • Purpose: Particle separation in solution is one of important process in a unit operation as well as in an extract preparation for biosensors. Contrary to centrifuge-type of mesh-type filter, using an ultrasonic standing wave make the filtering process continuous and free from maintenance. It is needed to investigate the characteristics of particle movement in the ultrasonic standing wave field. Methods: Through the computer simulation the effects of major design and driving parameters on the alignment characteristics of particles were investigated, and a cylindrical chamber with up-stream flow type was devised using two circular-shape PZTs on both sides of the chamber, one for transmitting ultrasonic wave and the other for just reflecting it. Then, the system performance was experimentally investigated as well. Results: The speed of a particle to reach pressure-node plane increased as the acoustic pressure and size of particle increased. The maximum allowable up-stream flow rate could be calculated as well. As expected, exact numbers of pressure-node planes were well formed at specific locations according to the wavelength of ultrasonic wave. As the driving frequency of PZT got close to its resonance frequency, the bands of particles were observed clearer, which meant the particles were trapped into narrower space. Higher excitation voltages to the PZT produced a greater acoustic force with which to trap particles in the pressure-node planes, so that the particles gathered could move upwards without disturbing their alignments even at a higher inlet flow rate. Conclusions: This research showed the feasibility of particle separation in solution in the continuous way by an ultrasonic standing wave. Further study is needed to develop a device to collect or harvest those separated particles.

A Study on the Characteristic and Droplet Uniformity of Spray Injection to Exhaust Gas Flow from Urea Solution Injector (Urea 수용액의 배기가스 유동장내 분무 특성과 분무 균일도에 관한 연구)

  • Oh, Jung-Mo;Cha, Won-Sim;Kim, Ki-Bum;Lee, Jin-Ha;Lee, Ki-Hyung
    • Transactions of the Korean Society of Automotive Engineers
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    • v.19 no.3
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    • pp.83-89
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    • 2011
  • Diesel engines can produce higher fuel efficiency and lower $CO_2$ emission, they are subject to ever more stringent emission regulation. However, there are two major emission concerns fo diesel engines like such as particulate matter (PM) and nitrogen oxides (NOx). Moreover, it is not easy to satisfy the regulations on the emission of NOx and PM, which are getting more strengthened. One of the solutions is to apply the new combustion concept using multistage injection such as HCCI and PCCI. The other solution is to apply after-treatment systems. For example, lean NOx trap catalyst, Urea-SCR and others have various advantages and disadvantages Especially, Urea-SCR system have advantages such as a high conversion efficiency and a wide operation conditions. Hence the key factor to implementation of Urea-SCR technology, good mixing of urea(Ammonia) and gas, reducing Ammonia slip. Urea mixer components are required to facilitate evaporation and mixing because the liquid state of urea poses significant barriers for evaporation, and the distance to mixer is the most critical that affect mixer performance. In this study, to find out the distance from injector to mixer and simulation factor, a laser diagnostics and high speed camera are used to analyze urea injector spray characteristics and to present a distribution of urea solution in transparent manifold In addition, Droplet Uniformity Index is calculated from the acquired images by using image processing method to clarify the distribution of spray.

The Study on X-ray Detection Characteristics of Radiation Detective Sensor with Changing Composition Ratio of Iodine in a-Se (a-Se에 첨가된 Iodine의 조성비 변화에 따른 X선 검출특성 연구)

  • Cha, Byung-Youl;Kang, Sang-Sik;Lee, Gyu-Hong;Kim, Jae-Hyung;Nam, Sang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.399-402
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    • 2002
  • This paper is researched that electric characteristic of Digital x-ray radiography technique with changing composition ratio of Iodine. Dopant material, Iodine is evaporated with amorphous selenium. Thorugh the old papers say, doponted Iodine will be down the created trap level because of Arsenic dopant material in amorphous selenium. Arsenic material of Composition ratio in amorphous selenium is fixed with 0.3% and test sample is deposited composition of 30, 100, 300, 500, 700ppm with thermal evaporate system. Experimental measurement is performed by dark current and x-ray sensitivity in amorphous selenium based radition detector sensor. Fabricated test sample thickness is $30{\mu}m$ and injected voltage is $3{\mu}m$$6{\mu}m$$9{\mu}m$ to both electrode. Experimental results showed that the net charge of composition rate of 30ppm is 398.88 pc/mR/$cm^2$ very high. And increase of the Iodine composition ratio is tendency to the decrease of net charge. Doping changing composition of Iodine in amorphous selenium detector offered to basical information of amorphous selenium material.

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A Study on the Characteristic of MOS structure using $HfO_{2}$ as high-k gate dielectric film ($HfO_{2}$를 이용한 MOS 구조의 제작 및 특성)

  • Park, C.I.;Youm, M.S.;Park, J.W.;Kim, J.W.;Sung, M.Y.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.163-166
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    • 2002
  • We investigated structural and electrical properties of Metal-Oxide-Semiconductor(MOS) structure using Hafnium $oxide(HfO_{2})$ as high-k gate dielectric material. $HfO_{2}$ films are ultrathin gate dielectric material witch have a thickness less than 2.0nm, so it is spotlighted to be substituted $SiO_{2}$ as gate dielectric material. In this paper We have grown $HfO_{2}$ films with pt electrode on P-type Silicon substrate by RF magnetron sputtering system using $HfO_{2}$ target and oserved the property of semiconductor-oxide interface. Using pt electrode, it is necessary to be annealed at ${300^{\circ}C}$. This process is to increase an adhesion ratio between $HfO_{2}$ films with pt electrode. In film deposition process, the deposition time of $HfO_{2}$ films is an important parameter. Structura1 properties are invetigated by AES depth profile, and electrical properties by Capacitance-Voltage characteristic. Interface trap density are measured to observe the interface between $HfO_{2}$ with Si using High-frequency(1MHz) C-V and Quasi - static C-V characteristic.

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Inhibitory Effects of Achyranthis Bidentatae Radix on Osteoclast Differentiation and Bone Resorption (우슬의 파골세포 분화 억제와 골 흡수 억제효과)

  • Kim, Ju-Ho;Ki, Ji-Ye;Ann, Ji-Young;Park, Hye-Jung;Kim, Hyun-Ju;Kwak, Han-Bok;Oh, Jae-Min;Kim, Yun-Kyung
    • The Korea Journal of Herbology
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    • v.25 no.1
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    • pp.65-74
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    • 2010
  • Objectives : Achyranthis Bidentatae Radix (ABR) has been used for treating of many symptoms especially osteoporosis and rheumatoid arthritis. In this study, we determined the effects of water extract of ABR in RANKL (Receptor Activator for Nuclear Factor $\kappa$ B Ligand)-induced osteoclast differentiation culture system. Methods : We assayed mRNA expression levels of NFATc1, c-Fos, TRAP, OSCAR, $FcR{\gamma}$, DAP12 and GAPDH in bone marrow macrophages (BMMs) treated with ABR. The protein expression levels of NFATc1, c-Fos, MAPKs and $\beta$-actin in cell lysates treated with ABR were analysed by Western blotting. In addition we determined the effects of water extract of ABR on LPS-induced bone-loss mouse. Results : Water extract of ABR showed remarkable inhibition on RANKL-treated osteoclast differentiation without cytotoxicity. ABR down-regulated the induction of c-Fos and NFATc1 by RANKL. ABR suppressed phosphorylation of JNK, p38 and I-${\kappa}B$. ABR rescued bone erosion by LPS induction in vivo study. Conclusions : These results demonstrate that ABR may be a useful remedy for curing of bone-loss disease such as osteoporosis.

Compliance with GMP and SSOP in College Foodservices by Comparison of Elementary and Middle & High School Foodservices (초, 중.고등학교 급식소와의 비교를 통한 대학 급식소의 GMP 시설 구비 및 SSOP 수행도 조사)

  • Park, Soon-Hee;Moon, Hye-Kyung
    • Journal of the Korean Dietetic Association
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    • v.18 no.3
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    • pp.248-265
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    • 2012
  • A total of 262 dietitians (in 97 college foodservices nationwide, 86 elementary school foodservices, and 79 middle & high school foodservices in the Changwon area) were given a survey questionnaire composed of 18 GMP and 29 SSOP items from May to July, 2011. As a whole, total usage level of GMP facilities (3.65/5 points) and total management level of SSOP (3.86) in college foodservices showed no significant differences compared to those in elementary school foodservices (GMP 3.74, SSOP 4.02) and middle & high school foodservices (GMP 3.75, SSOP 3.95). However, the results of this study suggest that seven items of the GMP facilities and five items of the SSOP should be improved for the development of the HACCP facility model in college foodservices. Those items that showed considerably lower points in GMP were as follows: 'Drain pipes from sinks of the cooking area are connected directly to the drain (3.74)' (P<0.001), 'The grease trap is installed outside the cooking area equipped with an oil separator (3.24)' (P<0.01), 'Entrance and the cooking area are adequately equipped with hand-washing and shoe disinfecting facilities (3.61)' (P<0.001), 'Cooking area, food storage, and dining area are adequately equipped with insect and rodent repellents (3.72)' (P<0.001), 'Cooking areas are equipped with air-conditioning/heating system and ventilation facility for maintenance of temperature and humidity (3.35)' (P<0.05), and 'Toilets for cooking staff only are provided; the its doorways are not directly accessible from the cooking area (3.25)' (P<0.01).

The golden age of self-development books and healing humanities (자기계발서 전성시대와 힐링 인문학)

  • Song, Hyeon;An, Kwan-Su
    • Journal of Digital Convergence
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    • v.11 no.11
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    • pp.783-793
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    • 2013
  • Neo-liberalism after IMF bailout made the Korean book market flushing with rose due to the alleged self-development books. Vision of self-development books under neoliberal social system is inevitably reduced to a means of capital pursuing commercialization in line with improving the competitiveness of privates through the development of human resources. Characteristics of self-development books, which attributes personal fail to personal responsibility and lack of essential element compared to others in a competitive society, trap individuals forced to choose into anxiety and helplessness. Self-development and healing is a complementary relationship. Human beings needs healing -healing humanities- in the process of self-development. Therefore, humanities should trigger developing and perceiving his own 'reflexive life skills'. Individual's sense of happiness in life and his own experience is very important, and the conscious relationship about their own feelings could elicit 'self-reinforcement'.

LYRYNGEAL ADJUSTMENTS FOR KOREAN CONSONANTS (한국어 파열음에 대한 후두내근의 역할)

  • ;H. Hirose
    • Proceedings of the KOR-BRONCHOESO Conference
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    • 1991.06a
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    • pp.15-15
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    • 1991
  • 한국어 자음에 대한 생리적인 분류는 조음점 및 조음발법에 따라 다시 세분화할 수 있는데 그중에서 조음발법에 따라 파열음, 마찰음, 파찰음 및 비음들 여러가지로 분류할 수 있다. 그중 특히 파열음은 그 개방하는 방법에 따라 연음(lenis), 경음(glottalized) 및 기식음(aspirated)등으로 구분하는데 이러한 각음을 육안으로 확인하면 모음이 발성되기 위한 성대진동이 있기전의 자음을 위한 성대의 운동의 현상을 보면 기식음에서는 성대열림이 가장 크고 연음에서도 열림이 크지만 기식음보다는 적고 경음에서는 성대의 열림이 가장 작았다. 이러한 현상은 후두내시경에 의해 쉽게 확인할 수 있었는데 이것을 과학적으로 규명하기 위해서는 여러연구에 의해 가능하나 흔히 후두근전도 검사에 의한 성대내전근과 외전근의 역할의 차이를 비교함으로서 가능해지리라 예상되어 본 연구를 시행하였다. 사용된 문형 또는 단어는 한가지를 제외하고는 모두 의미있는 단어를 사용하였으며 EMG recording을 위해 사용된 근육은 후두내전근인 Vocalis muscle과 후두외전근인 Posterior cricoarytenoid muscle이 사용되었고 전기신호는 computer data processing system에 의해 분석되어졌다. 결과는 내시경에 의한 성대열림의 거리측정 결과를 분석함과 동시에 후두내근에 대한 근전도검사에 의한 분석을 토대로 하였으며 이를 간단히 설명하면 이제까지 많은 사람들은 한국어 자음에 대한 각각의 특징적인 현상들을 주로 성대내전근의 역할에 의해 규명하였으나 본 결과로는 성대내전근의 역할도 중요하지만 성대외전근의 역할 또한 상호 연관성을 가지면서 매우 중요한 역할을 한다는 점이다.for the Isotropic plates can be used. Use of some coefficients can produce "exact" value for laminates with such configuration.trap with 2.88[eV] deep of injected space charge from the chathode in the crystaline regions. The origin of ${\alpha}$$_2$ peak was regarded as the detrapping process of ions trapped with 0.9[eV] deep originated from impurity-ion remained in the specimen during production process of the material, in the crystalline regions. The origin of ${\beta}$ peak was concluded to be due to the depolarization process of "C=0"dipole with the activation energy of 0.75[eV] in the amorphous regions. The origin of ${\gamma}$ peak was responsible to the process combined with the depolarization of "CH$_3$", chain segment, with the activation energy of carriers from the shallo

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Atomic Layer Deposited ZrxAl1-xOy Film as High κ Gate Insulator for High Performance ZnSnO Thin Film Transistor

  • Li, Jun;Zhou, You-Hang;Zhong, De-Yao;Huang, Chuan-Xin;Huang, Jian;Zhang, Jian-Hua
    • Electronic Materials Letters
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    • v.14 no.6
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    • pp.669-677
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    • 2018
  • In this work, the high ${\kappa}$ $Zr_xAl_{1-x}O_y$ films with a different Zr concentration have been deposited by atomic layer deposition, and the effect of Zr concentrations on the structure, chemical composition, surface morphology and dielectric properties of $Zr_xAl_{1-x}O_y$ films is analyzed by Atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and capacitance-frequency measurement. The effect of Zr concentrations of $Zr_xAl_{1-x}O_y$ gate insulator on the electrical property and stability under negative bias illumination stress (NBIS) or temperature stress (TS) of ZnSnO (ZTO) TFTs is firstly investigated. Under NBIS and TS, the much better stability of ZTO TFTs with $Zr_xAl_{1-x}O_y$ film as a gate insulator is due to the suppression of oxygen vacancy in ZTO channel layer and the decreased trap states originating from the Zr atom permeation at the $ZTO/Zr_xAl_{1-x}O_y$ interface. It provides a new strategy to fabricate the low consumption and high stability ZTO TFTs for application.