• 대한의생명과학회지
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• 제8권2호
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• pp.63-69
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• 2002

This study was performed to investigate the effectiveness of the aspiration trap method for collection of sputum by comparing with the conventional method which was collecting specimens at canular cap swab. In this study, the author tested by two methods to collect specimens from 46 patients who were cared with tracheostomy and intubation at the intensive care unit of an university hospital in Pusan, and investigated the incidence of the lower respiratory tract infection, the consistency between the two methods, the level of specimen contamination. Major results were as follows: Among the patients, 35 were cared with tracheostomy and 11 were cared with intubation. In clinical diagnosis we were classified the subjects in to two group, 17 of pneumonia group and 29 of non-pneumonia group. A total of 247 strains were isolated. Among them, most three strains were Serratia marcescens (62 strains; 25.1%), Pseudomonas aeruginosa (52 strains; 21.1%), and Acinetobacter baumannii (19 strains; 7.8%). Out of total, 188 (76.1%) strains were Gram negative bacilli. The isolated strains by the aspiration trap method were the average 2.1 strains, but by the canular cap swab method were 1.6 strains. In spite of the high contaminated possibility from the incision site and the oral cavity swab, the low isolated rates of the canular cap may be the dried environment of the canular of cap area. But the contamination rates were 57.2% of the canular cap, 51.5% of the oral swab and 50.5% of the incision site swab, respectively. The consistency of predominant microorganisms according to collection method were 86.7% of aspiration, 78.3% of canular, 74.3% of incision, and 63.6% of oral. In conclusion, the aspiration trap method fur the sputum collection from the patients with intubation of tracheostomy showed the lower contamination rate of the specimens and it was helpful for rapid, accurated interpretation of the lower respiratory tract infection and hospital infection.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.949-955
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• 2009

In this study, we investigated the effects of Cr dopant (1.0 at% $Cr_2O_3$ sintered at $1000^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and interface state levels of ZnO using dielectric functions ($Z^*$, $M^*$, $Y^*$, $\varepsilon^*$, and $tan{\delta}$), admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). For the identification of the bulk trap levels, we examine the zero-biased admittance spectroscopy and dielectric functions as a function of frequency and temperature. Impedance and electric modulus spectroscopy is a powerful technique to characterize grain boundaries of electronic ceramic materials as well. As a result, three kinds of bulk defect trap levels were found below the conduction band edge of ZnO in 1.0 at% Cr-doped ZnO (Cr-ZnO) as 0.11 eV, 0.21 eV, and 0.31 eV. The overlapped defect levels ($Zn^{..}_i$ and $V^{\cdot}_0$) in admittance spectra were successfully separated by the combination of dielectric function such as $M^*$, $\varepsilon^*$, and $tan{\delta}$. In Cr-ZnO, the interfacial state level was about 1.17 eV by IS and MS. Also we measured the resistance ($R_{gb}$) and capacitance ($C_{gb}$) of grain boundaries with temperature using impedance-modulus spectroscopy. It have discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z"-logf plots with temperature.

• 한국진공학회지
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• 제17권4호
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• pp.346-352
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• 2008

Eu을 이온주입한 GaN 시료에 대하여 Eu의 site들에 대한 연구와 Mg을 같이 도핑하였을 때의 효과를 분석하였다. 빨간색 광원으로 주목받는 620nm 근처의 Eu의 $^5D_0\;{\rightarrow}\;^7F_2$ 전이에 대하여 photoluminescence (PL) 와 PL 여기 분광법을 이용하여 GaN 내에서 Eu 이온이 자리하는 이미 알려진 2 개의 site 이외에도 2 종류의 site들이 있음을 확인하였다. 이들 중 한 site는 Mg의 codoping에 의하여 PL 크기가 약 1.6배 증가하였다. 이는 GaN의 밴드갭보다 작은 trap에 의해 에너지를 전달받는 Er이나 Nd보다 Mg의 도핑에 의한 효과가 매우 작은 것이다. GaN:Eu에서는 Mg과 관련된 trap을 통하지 않고 GaN에서 직접 Eu으로 에너지를 전달하기 때문으로 생각된다.

• 한국전기전자재료학회논문지
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• 제31권4호
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• pp.203-207
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• 2018

In this work, we investigate the effects of lithium doping on the electric performance of solution-processed n-type zinc tin oxide (ZTO)/p-type silicon carbide (SiC) heterojunction diode structures. The proper amount of lithium doping not only affects the carrier concentration and interface quality but also influences the temperature sensitivity of the series resistance and activation energy. We confirmed that the device characteristics vary with lithium doping at concentrations of 0, 10, and 20 wt%. In particular, the highest rectification ratio of $1.89{\times}107$ and the lowest trap density of $4.829{\times}1,022cm^{-2}$ were observed at 20 wt% of lithium doping. Devices at this doping level showed the best characteristics. As the temperature was increased, the series resistance value decreased. Additionally, the activation energy was observed to change with respect to the component acting on the trap. We have demonstrated that lithium doping is an effective way to obtain a higher performance ZTO-based diode.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 하계학술발표회
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• pp.74-75
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• 2000

The past few decades have witnessed the development of very robust technique, known as magneto-optical trap(MOT), for cooling and trapping of neutral atoms using lasers and magnetic fields. This technique can easily produce cooled atoms to a temperature range of nano-kelvin $s^{(1)}$ . These laser cooled and trapped atoms have found applications in various fields, such as ultrahigh resolution spectroscopy, precision atomic clocks, very cold atomic collision physics, Bose-Einstein Condensation, the Atom laser, etc. Particularly, a few isolated atoms of very low temperature are needed in the cavity QED studies in the optical regime. One can obtain such atoms from a MOT using the atomic fountain technique. The widely used technique for atomic fountain is, first to cool and trap the neutral atoms in MOT. And then launch them in the vertical (1, 1, 1) direction with respect to cooling beams, using moving molasses technique. Recently, this technique combined with the cavity-QED has opened an active area of basic research. This way atoms can be strongly coupled to the optical radiation in the cavity and leads to various new effects. Trapping of single atom after separating it from MOT in the high Q-optical cavity is actively initiated presentl $y^{(2.3)}$. This will help to sharpen our understanding of atom-photon interaction at quantum level and may lead to the development of single-atom laser. Our efforts to develop an $^{85}$ Rb-atomic fountain is in progress. (omitted)

• Asian-Australasian Journal of Animal Sciences
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• 제13권8호
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• pp.1133-1136
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• 2000

Wheat straw was treated with 4 per cent urea at a moisture level of 50 per cent alongwith different levels of boric acid viz. 1, 2, 3 and 4 per cent, under laboratory conditions to know the impact of boric acid on ammonia-N fixation in the straw. Murrah buffaloes were used for determining the disappearance of dry matter, CP and fibre constituents by nylon bag technique. Ammoniation increased CP content of wheat straw, which increased further due to addition of boric acid. Low level of boric acid (1%) had no adverse effect on fibre constituents disappearance but at higher levels there was a depressioon in the disappearance of fibre coonstituents. It can be concluded that low level of boric acid was sufficient to trap the excess ammonia released during urea ammoniation of wheat straw without affecting other constituents and their disappearance in the rumen of buffaloes.

• Transactions on Electrical and Electronic Materials
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• 제5권5호
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• pp.194-198
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• 2004

The influences of the deep-level concentration of p-type Si substrates on the optical properties of nano-porous silicon (PS) are investigated by deep level transient spectroscopy (DLTS) and photoluminescence (PL). Utilizing a Si substrate with Fe contaminations significantly enhanced the PL intensity of PS. All the PS samples formed on Fe-contaminated silicon substrates had stronger PL yield than that of reference PS without any intentional Fe contamination but the emission peak is not significantly changed. For the PS 1000 sample with Fe contamination of 1,000 ppb, the maximum PL intensity showed about ten times stronger PL than that of the reference PS sample. From PL and DLTS results, the PL efficiency strongly depends on the Fe-related trap concentration in Si substrates.

• International Journal of Advanced Culture Technology
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• 제12권2호
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• pp.51-61
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• 2024

This study analyzes and compares the roles and significance of large firms in economic growth by differentiating developmental stages. The focus is on both the role of big businesses on the road from middle- to high-income countries and the performance in their economies. By classifying the top 30 nonfinancial firms into their origin countries, we have constructed a country-level data basis covering 33 countries ranging from middle- to high-income economies for the 2001 to 2017 period. We conduct fixed effect estimation. Empirical results show that capital-intensive big businesses would be more predominant in developed economies. In terms of policy implications, the results suggest that if policymakers want to optimize the role of big businesses in economic growth, policymakers need to distinguish the income level. Policymakers also need to adjust the size distribution of firms moderately ahead of time to create the size distribution of firms needed to take the economy to the next level.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권8호
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• pp.557-562
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• 1999

Electrical conduction characteristics of XLPE film evaporated with different metal electrode are discussed. The relation between electrical current(I) and Voltage(V) in the M(metal)-I(XLPE)-M(metal) structure are measured in the temperature range from 25$[^{\circ}C]$ to 90[$[^{\circ}C]$ . Several kinds of metals are used as electrode, such as, Al, Ag and Cu.From the experimental results, it is conclused that the conduction mechanism at highelectric field is SCLC. The dependences of temperature and kinds of metal on the trap filled electric field level can be well explained by this theory.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.133-133
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• 2009

It is desirable to choose a high-k material having a large band offset with the tunneling oxide and a deep trapping level for use as the charge trapping layer to achieve high PIE (Programming/erasing) speeds and good reliability, respectively. In this paper, charge trapping and tunneling characteristics of high-k hafnium oxide ($HfO_2$) layer with various thicknesses were investigated for applications of tunnel barrier engineered nonvolatile memory. A critical thickness of $HfO_2$ layer for suppressing the charge trapping and enhancing the tunneling sensitivity of tunnel barrier were developed. Also, the charge trap centroid and charge trap density were extracted by constant current stress (CCS) method. As a result, the optimization of $HfO_2$ thickness considerably improved the performances of non-volatile memory(NVM).