1 |
A. I. Belogorokhov, R. Enderlein, A. Tabata, J. R. Leite, V. A. Karavanskii, and L. I. Belogorokhova, 'Enhanced photoluminescence from porous silicon formed by nonstandard preparation', Phys. Rev. B 56, p. 10276, 1997
DOI
|
2 |
Yu Heng Zhang, Xin Jian Li, Lei Zhang, and Qian Wang Chen, 'Nondegrading photoluminescence in porous silicon', Phys. Rev. Lett. 81, p. 1710, 1998
DOI
ScienceOn
|
3 |
C. H. Chen and Y. F. Chen, 'Strong and stable visible luminescence from Au-passivated porous silicon', Appl. Phys. Lett. 75, p. 2560, 1999
DOI
|
4 |
X. Li and P. W. Bohn, 'Metal-assisted chemical etching in produces porous silicon', Appl. Phys. Lett. 77, p. 2572, 2000
DOI
ScienceOn
|
5 |
S. Sen, J. Siejka, A. Savtchouk, and J. Lagowski, 'Spin-on doping of porous silicon and its effect on photoluminescence and transport characteristics', Appl. Phys. Lett. 70, p. 2253, 1997
DOI
ScienceOn
|
6 |
C. Peng, P. M. Fauchet. J. M. Rehm, G. L. Mclendon, F. Seiferth, and S. K. Kurinec, 'Ion implantation of porous silicon', Appl. Phys. Lett. 64, p. 1259, 1994
|
7 |
M. Hourai, T. Naridomi, Y. aka, K. Murakami, S. Sumita, N. Fusino, and T. Shiraiwa, 'A Method of Quantitative Contamination with Metallic Impurities of the Surface of a Silicon Wafer', Jpn. J. Appl. Phys. 27,p. L2361, 1988
DOI
ScienceOn
|
8 |
K. Wtinstel and P. Wagner, 'Iron-related deep levels in silicon', Solid State Commun. 40, p. 797, 1981
DOI
ScienceOn
|
9 |
Yoshihiko Kanemitsu, Shinji Okamoto, Masanori Otobe, and Shunri ada, 'Photoluminescence mechanism in surface-oxidized silicon nanocrystals', Phys. Rev. B 55, p. R7375, 1997
|
10 |
L. T. Canham, 'Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers', Appl. Phys. Lett. 57, p.1046, 1990
DOI
|
11 |
Nobuyoshi Koshida and Hideki Koyama, 'Visible electroluminescence from porous silicon', Appl. Phys. Lett. 60, p. 347, 1992
DOI
|
12 |
D. Porath, A. Bezryadin, S. de Vries, and C. Dekker, 'Direct measurement of electrical transport through DNA molecules ', Nature 403, p. 635, 2000
DOI
ScienceOn
|
13 |
L. T. Canham, M. R. Houlton, W. Y. Leong, C. Pickering, and J. M. Keen, 'Atmospheric impregnation of porous silicon at room tempera-ture', J. Appl. Phys. 70, p. 422, 1991
DOI
|
14 |
A. Loni, A. J. Simons, T. I. Cox, P. D. J. Calcott, and L. T. Canham, 'Electroluminescent porous silicon device with an external quantum efficiency greater than 0.1 % under CW operation', Electron. Lett. 31, p. 1288, 1995
DOI
ScienceOn
|
15 |
H. Koyama, T. Nakagawa, T. Ozaki, and N. Koshida, 'Post-anodization filtered illumination of. porous silicon in HF solutions: An effective method to improve luminescence properties", Appl. Phys. Lett. 65,p. 1656, 1994
DOI
ScienceOn
|